TIP116 [COMSET]
SILICON DARLINGTON POWER TRANSISTORS; 硅达林顿功率晶体管
| 型号： | TIP116 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON DARLINGTON POWER TRANSISTORS |
| 文件： | 总3页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP TIP115-116-117
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are designed for general purpose amplifier and low-speed switching
applications.
NPN complements are TIP110-111-112
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
Ratings
Value
Unit
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
-60
-80
-100
-60
-80
-100
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
VCEO
VEBO
IC
V
V
-5
-2
-4
50
50
2
A
ICM
Collector Peak Current
Base Current
A
IB
mA
@ Tc < 25°
@ Ta < 25°
PT
Power Dissipation
Watts
TJ
Ts
Junction Temperature
150
°C
Storage Temperature range
-65 to +150
05/10/2012
COMSET SEMICONDUCTORS
1 | 3
PNP TIP115-116-117
THERMAL CHARACTERISTICS
Symbol
RthJ-case
Ratings
Value
Unit
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
From junction-case
2.5
°C/W
RthJ-amb
From junction-ambient
62.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
Ratings
Test Condition(s)
Min Typ Max Unit
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
Collector Cutoff Current IE= 0,VCB = -VCBOmax
-
-
-
-
-
-
-1
-2
-2
mA
mA
mA
V
IE= 0,
V
ICEO
Collector Cutoff Current
CE = -1/2 VCEOmax
IEBO
Emitter Cutoff Current
VEB= -5 V, IC= 0
-60
-80
-
-
-
-
-
-
Collector-Emitter
Breakdown Voltage (*)
VCEO
IC= -30 mA, IB= 0
IC= -2 A, IB= -8 mA
IC= -2 A, VCE= -4 V
VCE= -4 V, IC= -1 A
VCE= -4 V, IC= -2 A
TIP112 -100
TIP110
Collector-Emitter
saturation Voltage (*)
VCE(SAT)
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
-
-
-
-
-
-
-
-2.5
-2.8
-
V
Base-Emitter Voltage
(*)
VBE(on)
V
1000
500
-
hFE
DC Current Gain (*)
-
-
IE= 0, VCB = -10 V
f= 0.1MHz
COB
Output Capacitance
200
pF
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
05/10/2012
COMSET SEMICONDUCTORS
2 | 3
PNP TIP115-116-117
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
Max.
A
B
C
D
E
F
9,90
10,30
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
G
H
L
M
N
P
R
S
T
0,46
2,50
4,98
2.49
0,70
U
Pin 1 :
Pin 2 :
Pin 3 :
Package
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
05/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3 | 3
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