TIP34C [COMSET]
SILICON POWER TRANSISTORS; 硅功率晶体管
| 型号： | TIP34C |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON POWER TRANSISTORS |
| 文件： | 总4页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP TIP34-A-B-C
SILICON POWER TRANSISTORS
They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in
general purpose power amplifier and switching applications.
NPN complements are TIP33-A-B-C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
Ratings
Value
Unit
TIP34
-40
-60
-80
-100
-40
TIP34A
TIP34B
TIP34C
TIP34
Collector-Base Voltage
V
TIP34A
TIP34B
TIP34C
TIP34
-60
-80
-100
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
TIP34A
TIP34B
TIP34C
VEBO
-5
TIP34
TIP34A
TIP34B
TIP34C
TIP34
IC
Collector Current
-10
-15
A
A
TIP34A
TIP34B
TIP34C
ICM
Collector Peak Current
02/10/2012
COMSET SEMICONDUCTORS
1 | 4
PNP TIP34-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
TIP34
TIP34A
TIP34B
TIP34C
TIP34
IB
Base Current
-3
A
TIP34A
TIP34B
TIP34C
TIP34
TIP34A
TIP34B
TIP34C
TIP34
@ Tc < 25°
@ Ta < 25°
80
Power Dissipation
PC
Watts
3.5
TIP34A
TIP34B
TIP34C
TIP34
TIP34A
TIP34B
TIP34C
TJ
Ts
Junction Temperature
150
°C
Storage Temperature range
-65 to +150
THERMAL CHARACTERISTICS
Symbol
RthJ-MB
Ratings
Value
Unit
TIP34
TIP34A
TIP34B
TIP34C
TIP34
From junction to mounting base
1.56
°C/W
TIP34A
TIP34B
TIP34C
RthJ-A
From junction to ambient in free air
35.7
°C/W
02/10/2012
COMSET SEMICONDUCTORS
2 | 4
PNP TIP34-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICES
Ratings
Test Condition(s)
Min Typ Max Unit
TIP34
TIP34A
TIP34B
TIP34C
TIP34
TIP34A
TIP34B
TIP34C
TIP34
Collector Cutoff Current
IE= 0, VCE = -VCEO
-
-
-0.4
Ma
mA
mA
V
IB= 0, VCE = -30V
IB= 0, VCE = -60V
-
-
-
-
-0.7
-0.7
ICEO
IEBO
VCEO
Collector Cutoff Current
Emitter Cutoff Current
TIP34A
TIP34B
TIP34C
TIP34
VEB= -5 V
IC= 0
-
-
-1
-40
-60
-80
-
-
-
-
-
-
-
-
TIP34A
TIP34B
Collector-Emitter
Breakdown Voltage (*)
IC= -30 mA
IB= 0
TIP34C -100
TIP34
TIP34A
TIP34B
TIP34C
TIP34
TIP34A
TIP34B
TIP34C
TIP34
TIP34A
TIP34B
TIP34C
TIP34
TIP34A
TIP34B
TIP34C
TIP34
TIP34A
TIP34B
TIP34C
TIP34
TIP34A
IC= -3 A
IB= -300 mA
-
-
-
-
-
-
-
-1
-4
V
Collector-Emitter
saturation Voltage (*)
VCE(SAT)
VBE(on)
hFE
IC= -10 A
IB= -2.5 mA
-
V
IC= -3 A
VCE= -4 V
-
-1.6
-3
V
Base-Emitter Voltage (*)
IC= -10 A
VCE= -4 V
-
V
VCE= -4 V
IC= -1 A
40
-
DC Current Gain (*)
-
VCE= -4 V
IC= -3 A
20
100
TIP34B
TIP34C
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
02/10/2012
COMSET SEMICONDUCTORS
3 | 4
PNP TIP34-A-B-C
Symbol
fT
Ratings
Test Condition(s)
Min Typ Max Unit
TIP34
VCE= -10 V
IC= -0.5 A
f= 1kHz
TIP34A
TIP34B
TIP34C
Current Gain-Bandwidth
Product
3
-
-
MHz
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min. Max.
15.20
A
B
C
D
E
F
1600
2.10
5.00
3.30
9.60
2.00
0.55
1.40
5.55
1.90
4.60
3.10
G
H
J
0.35
5.35
20.00
19.60
0.95
K
L
20.20
1.25
2.00
3.00
4.00
4.00
1.80
5.20
M
N
O
P
R
S
T
4.80
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Base
Collector
Emitter
Collector
September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
02/10/2012
info@comsetsemi.com
4 | 4
COMSET SEMICONDUCTORS
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