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2N2326 [COMSET]

SILICON THYRISTORS; 硅闸流体

2N2326


元器件型号：	2N2326
生产厂家：	COMSET SEMICONDUCTOR
描述和应用：	SILICON THYRISTORS 硅闸流体栅极
PDF文件：	总3页 (文件大小：80K)
下载文档：	下载PDF数据表文档文件
型号参数：2N2326参数

2N2326A

SILICON CONTROLLED RECTIFIER

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26 MICROSEMI

2N2326AS

SILICON CONTROLLED RECTIFIER

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18 MICROSEMI

2N2326S

SILICON CONTROLLED RECTIFIER

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17 MICROSEMI

2N2326SE3

Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 MICROSEMI

2N2326SE3

Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 MICROSEMI

2N2327

SCRs 1.6 Amp, Planear

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10 MICROSEMI

2N2327

SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS

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11 CENTRAL

2N2327

SILICON THYRISTORS

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11 COMSET

2N2327

Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 250V V(DRM), 250V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3

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0 CENTRAL

2N2327

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 250; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 0.1; Capacitance: 0.15; Package: TO-39

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0 DIGITRON

2N2327A

SCRs 1.6 Amp, Planear

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15 MICROSEMI

2N2327AE3

Silicon Controlled Rectifier, 2.512A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39, TO-39, 3 PIN

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0 MICROSEMI

2N2327AS

Thyristor Switches

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5 MICROSEMI

2N2327E3

Silicon Controlled Rectifier, 2.512A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39, TO-39, 3 PIN

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0 MICROSEMI

2N2327LEADFREE

Silicon Controlled Rectifier, 1.6A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3

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0 CENTRAL

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