2N2327 [COMSET]

SILICON THYRISTORS; 硅闸流体
2N2327
元器件型号: 2N2327
生产厂家: COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述和应用:

SILICON THYRISTORS
硅闸流体

栅极 触发装置 可控硅整流器
PDF文件: 总3页 (文件大小:80K)
下载文档:  下载PDF数据表文档文件
型号参数:2N2327参数

2N2327A

SCRs 1.6 Amp, Planear

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15 MICROSEMI

2N2327AE3

Silicon Controlled Rectifier, 2.512A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39, TO-39, 3 PIN

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0 MICROSEMI

2N2327AS

Thyristor Switches

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5 MICROSEMI

2N2327E3

Silicon Controlled Rectifier, 2.512A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39, TO-39, 3 PIN

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0 MICROSEMI

2N2327LEADFREE

Silicon Controlled Rectifier, 1.6A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3

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0 CENTRAL

2N2327LEADFREE

Silicon Controlled Rectifier, 1.6A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3

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0 CENTRAL

2N2327PBFREE

Silicon Controlled Rectifier,

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0 CENTRAL

2N2327S

Thyristor Switches

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5 MICROSEMI

2N2328

SCRs 1.6 Amp, Planear

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32 MICROSEMI

2N2328

SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS

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10 CENTRAL

2N2328

SILICON THYRISTORS

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14 COMSET

2N2328

SILICON CONTROLLED RECTIFIER

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2 MICROSEMI

2N2328

Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 300V V(DRM), 300V V(RRM), 1 Element, TO-39, TO-39, 3 PIN

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0 ASI

2N2328

Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 300V V(DRM), 300V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3

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0 CENTRAL

2N2328

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 300; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 0.1; Capacitance: 0.15; Package: TO-39

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0 DIGITRON