T-ISLT-2-2134 [CRANE]

500MHz - 1000MHz RF/MICROWAVE DIVERSITY SWITCH, 0.8dB INSERTION LOSS, HERMETIC SEALED, MINIATURE PACKAGE;
T-ISLT-2-2134
型号: T-ISLT-2-2134
厂家: Crane Aerospace & Electronics.    Crane Aerospace & Electronics.
描述:

500MHz - 1000MHz RF/MICROWAVE DIVERSITY SWITCH, 0.8dB INSERTION LOSS, HERMETIC SEALED, MINIATURE PACKAGE

瞄准线 分离技术 隔离技术 射频 微波
文件: 总1页 (文件大小:191K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Crane Aerospace & Electronics Microwave Solutions  
MODEL T-ISLT-2-2134 - HIGH POWER MICROWAVE SP2T SWITCH  
TECHNICAL FEATURE  
FEATURES  
Miniature Hermetic Construction  
Low Loss  
PERFORMANCE  
DESCRIPTION  
The T-ISLT-2-2134 is a PIN diode switch for UHF  
applications. The device operates with an external driver  
supplied by the customer. The switch offers high isolation  
and termination for the non-selected port.  
Frequency Range ..................................0.5 to 1.0 GHz  
Insertion Loss ............................................ 0.8 dB max  
Isolation ....................................................... 25 dB min.  
Operating Power .............................................200 mW  
Switching Speed.............................................1 us max  
Control ...................................................... Bipolar Bias  
.............................................................. 70 mA forward,  
...................................................................1OV reverse  
Power Supply ............................................ +30, -5VDC  
Connectors ..............................................SMA Female  
Size ..............................................2” x 1.8” x 1.05” max  
Mounting Temperature ............................. +50˚C max  
This switch is suitable for signal control applications  
including ECM and communications transmitters. This  
might apply as a transmit/receive switch or selection  
between bands of signal sources or antennas.  
The T-ISLT-2-2134 represents just one example of the  
extensive design capability of the recently initiated control  
device product line.  
Crane Aerospace & Electronics  
Microwave Solutions Signal Technology  
28 Tozer Road, Beverly, MA 01915  
+1.978.524.7200 mw@crane-eg.com  
www.craneae.com/mw  
The information in this document is a derivative of a document cleared by the Department of Defense (DoD) Office of Security Review (OSR) for public release.  
OSR case number 10-S-0983 dated March 11, 2010. DS_T_ISLT_2_2134_High Power Microwave Sp2t Switch_MW_031110.doc. This revision supersedes all  
previous releases. All technical information is believed to be accurate, but no responsibility is assumed for errors. We reserve the right to make changes in  
products or specifications without notice. Copyright © 2011 Crane Electronics, Inc. All rights reserved.  

相关型号:

T-IXFD10N100

Power Field-Effect Transistor, 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS

T-IXFD10N90-L

Power Field-Effect Transistor, 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS

T-IXFD12N90-L

Power Field-Effect Transistor, 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS

T-IXFD13N50

Power Field-Effect Transistor, 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS

T-IXFD13N80

Power Field-Effect Transistor, 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS

T-IXFD14N100

Power Field-Effect Transistor, 1000V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS

T-IXFD14N80

Power Field-Effect Transistor, 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS

T-IXFD21N50

Power Field-Effect Transistor, 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS

T-IXFD24N50

Power Field-Effect Transistor, 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS

T-IXFD30N50

Power Field-Effect Transistor, 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS

T-IXFD40N30

暂无描述
IXYS

T-IXFD42N20

Power Field-Effect Transistor, 200V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXYS