C2M0045170D [CREE]
Silicon Carbide Power MOSFET C2MTM MOSFET Technology;
| 型号： | C2M0045170D |
| 厂家： | 
CREE, INC |
| 描述： | Silicon Carbide Power MOSFET C2MTM MOSFET Technology |
| 文件： | 总10页 (文件大小：1197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDS
ID
RDS(on)
1700 V
72 A
@
25˚C
C2M0045170D
45 mΩ
Silicon Carbide Power MOSFET
C2MTM MOSFET Technology
N-Channel Enhancement Mode
Features
Package
•ꢀ High Blocking Voltage with Low On-Resistance
•ꢀ High Speed Switching with Low Capacitances
•ꢀ Easy to Parallel and Simple to Drive
•ꢀ Resistant to Latch-Up
•ꢀ Halogen Free, RoHS Compliant
Benefits
TO-247-3
•ꢀ HigherꢀSystemꢀEfficiency
•ꢀ Reduced Cooling Requirements
•ꢀ Increased Power Density
•ꢀ Increased System Switching Frequency
Applications
•ꢀ Solar Inverters
•ꢀ Switch Mode Power Supplies
•ꢀ High Voltage DC/DC converters
•ꢀ Motor Drive
Part Number
Package
Marking
•ꢀ Pulsed Power Applications
C2M0045170D
TO-247-3
C2M0045170
Maximum Ratings (TCꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Drain - Source Voltage
Value
Unit
Test Conditions
Note
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
1700
-10/+25
-5/+20
72
V
V
V
VDSmax
VGSmax
VGSop
Gate - Source Voltage
Gate - Source Voltage
Absoluteꢀmaximumꢀvalues,ꢀACꢀ(fꢀ>1ꢀHz)
Recommended operational values
Fig. 19
VGS =20 V, TC =ꢀ25˚C
VGS =20 V, TC =ꢀ100˚C
Continuous Drain Current
Pulsed Drain Current
A
A
ID
48
160
520
Fig. 22
Fig. 20
ID(pulse)
PD
Pulse width tP limited by Tjmax
Power Dissipation
W
TC=25˚C,ꢀT ꢀ=ꢀ150ꢀ˚C
J
-40 to
+150
Operating Junction and Storage Temperature
˚C
T , Tstg
J
Solder Temperature
Mounting Torque
260
˚C
1.6mmꢀ(0.063”)ꢀfromꢀcaseꢀforꢀ10s
TL
1
8.8
Nm
lbf-in
M3 or 6-32 screw
Md
1
C2M0045170D Rev. -, 06-2016
Electrical Characteristics (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Min.
1700
2.0
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
2.6
1.8
2
4
VDS = VGS, ID = 18mA
V
V
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = VGS, ID = 18mA, TJ = 150 °C
VDS = 1700 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
600
70
μA
nA
45
90
VGS = 20 V, ID = 50 A
Fig.
4,5,6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
VGS = 20 V, ID = 50 A, TJ = 150 °C
VDS= 20 V, IDS= 50 A
21.7
24.4
gfs
S
Fig. 7
VDS= 20 V, IDS= 50 A, TJ = 150 °C
Ciss
Coss
Crss
Eoss
EON
EOFF
EON
EOFF
td(on)
tr
Input Capacitance
3672
171
6.7
VGS = 0 V
Fig.
17,18
Output Capacitance
pF
VDS = 1000 V
Reverse Transfer Capacitance
Coss Stored Energy
f = 1 MHz
AC
V
= 25 mV
105
2.1
μJ
Fig 16
VDS = 1200 V, VGS = -5/20 V,
Fig. 26,
29b
Note 2
Turn-OnꢀSwitchingꢀEnergyꢀ(SiCꢀDiodeꢀFWD)
TurnꢀOffꢀSwitchingꢀEnergyꢀ(SiCꢀDiodeꢀFWD)
Turn-OnꢀSwitchingꢀEnergyꢀ(BodyꢀDiodeꢀFWD)
TurnꢀOffꢀSwitchingꢀEnergyꢀ(BodyꢀDiodeꢀFWD)
Turn-On Delay Time
mJ
ID = 50A, RG(ext)ꢀ=ꢀ2.5Ω,ꢀL=ꢀ105ꢀμH,ꢀ
TJ = 150 °C, using SiC Diode as FWD
0.86
4.7
VDS = 1200 V, VGS = -5/20 V,
Fig. 26,
29a
Note 2
mJ
ns
ID = 50A, RG(ext)ꢀ=ꢀ2.5Ω,ꢀL=ꢀ105ꢀμH,ꢀ
TJ = 150 °C, using MOSFET as FWD
0.93
65
VDD = 1200 V, VGS = -5/20 V
ID = 50 A,
RG(ext)ꢀ=ꢀ2.5ꢀΩ,ꢀꢀTimingꢀrelativeꢀtoꢀVDS
Inductive load
Fig. 27,
29
Note 2
Rise Time
20
td(off)
Turn-Off Delay Time
48
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
18
1.3
44
,
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
Ω
f = 1 MHz VAC = 25 mV
VDS = 1200 V, VGS = -5/20 V
ID = 50 A
57
nC
Fig. 12
Per IEC60747-8-4 pg 21
188
Reverse Diode Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.1
3.6
V
V
A
VGS = - 5 V, ISD = 25 A
Fig. 8, 9,
10
VSD
Diode Forward Voltage
Note 1
VGS = - 5 V, ISD = 25 A, T = 150 °C
J
IS
trr
Continuous Diode Forward Current
Reverse Recovery Time
72
TC= 25 °C, VGS = - 5 V
Note 1
70
530
14
ns
nC
A
VGS = - 5 V, ISD = 50 A , VR = 1200 V
dif/dt = 1400 A/µs
Qrr
Irrm
Reverse Recovery Charge
Note 1
Peak Reverse Recovery Current
Noteꢀ(1):ꢀWhenꢀusingꢀSiCꢀBodyꢀDiodeꢀtheꢀmaximumꢀrecommendedꢀVGS = -5V
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
RθJC
RθJC
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
0.22
0.24
40
Fig. 21
°C/W
2
C2M0045170D Rev. -, 06-2016
Typical Performance
150
150
125
100
75
Conditions:
TJ = -40 °C
tp < 200 µs
Conditions:
TJ = 25 °C
tp < 200 µs
VGS = 20 V
VGS = 20 V
125
VGS = 18 V
VGS = 18 V
VGS = 14 V
VGS = 16 V
VGS = 16 V
100
VGS = 14 V
VGS = 12 V
75
50
25
0
VGS = 12 V
50
VGS = 10 V
VGS = 10 V
25
0
0.0
0.0
0
2.5
5.0
7.5
10.0
12.5
15.0
20.0
140
0.0
2.5
5.0
7.5
10.0
12.5
15.0
150
150
Drain-Source Voltage, VDS (V)
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -40 °C
Figure 2. Output Characteristics TJ = 25 °C
2.5
2.0
1.5
1.0
0.5
0.0
150
125
100
75
Conditions:
TJ = 150 °C
tp < 200 µs
Conditions:
IDS = 50 A
GS = 20 V
tp < 200 µs
VGS = 20 V
VGS = 18 V
V
VGS = 16 V
VGS = 14 V
VGS = 12 V
VGS = 10 V
50
25
0
-50
-25
0
25
50
75
100
125
2.5
5.0
7.5
10.0
12.5
15.0
17.5
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
Figure 4. Normalized On-Resistance vs. Temperature
Figure 3. Output Characteristics TJ = 150 °C
160
140
120
100
80
120
100
80
60
40
20
0
Conditions:
IDS = 50 A
tp < 200 µs
Conditions:
VGS = 20 V
tp < 200 µs
TJ = 150 °C
VGS = 14 V
VGS = 16 V
TJ = 25 °C
60
VGS = 20 V
40
VGS = 18 V
TJ = -40 °C
20
0
20
40
60
80
100
120
-50
-25
0
25
50
75
100
125
Drain-Source Current, IDS (A)
Junction Temperature, TJ (°C)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
3
C2M0045170D Rev. -, 06-2016
Typical Performance
125
-7
-6
-5
-4
-3
-2
-1
0
Conditions:
VDS = 20 V
tp < 200 µs
0
100
75
50
25
0
VGS = -5 V
-30
-60
-90
-120
-150
TJ = 150 °C
VGS = 0 V
TJ = 25 °C
VGS = -2 V
TJ = -40 °C
Conditions:
TJ = -40°C
tp < 200 µs
0
2
4
6
8
10
12
14
Drain-Source Voltage VDS (V)
Gate-SourceVoltage, VGS (V)
Figure 7. Transfer Characteristic For
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -40 ºC
-7
-6
-5
-4
-3
-2
-1
0
-7
-6
-5
-4
-3
-2
-1
0
0
0
VGS = -5 V
VGS = -5 V
-30
-60
-90
-120
-150
-30
-60
-90
VGS = 0 V
VGS = 0 V
VGS = -2 V
VGS = -2 V
-120
Conditions:
TJ = 150°C
tp < 200 µs
Conditions:
TJ = 25°C
tp < 200 µs
-150
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
Conditons
GS =VDS
IDS = 18 mA
Conditions:
V
I
I
DS = 50 A
GS = 100 mA
20
15
10
5
VDS = 1200 V
TJ = 25 °C
0
-5
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
160
180
200
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristic
4
C2M0045170D Rev. -, 06-2016
Typical Performance
-6
-5
-4
-3
-2
-1
0
-6
-5
-4
-3
-2
-1
0
0
0
VGS = 0 V
VGS = 0 V
VGS = 5 V
-30
-60
-90
-120
-150
-30
-60
-90
-120
-150
VGS = 5 V
VGS = 10 V
VGS = 10 V
VGS = 15 V
VGS = 15 V
VGS = 20 V
VGS = 20 V
Conditions:
TJ = -40 °C
tp < 200 µs
Conditions:
TJ = 25 °C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -40 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
120
100
80
60
40
20
0
-6
-5
-4
-3
-2
-1
0
0
VGS = 0 V
-30
-60
-90
-120
-150
VGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
Conditions:
TJ = 150 °C
tp < 200 µs
0
200
400
600
800
1000
1200
Drain to Source Voltage, VDS (V)
Drain-Source Voltage VDS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC
Figure 16. Output Capacitor Stored Energy
10000
10000
1000
100
10
Conditions:
TJ = 25 °C
Conditions:
TJ = 25 °C
VAC = 25 mV
VAC = 25 mV
Ciss
Ciss
f = 1 MHz
f = 1 MHz
1000
100
10
Coss
Coss
Crss
Crss
1
1
0
50
100
Drain-Source Voltage, VDS (V)
150
200
0
200
400
600
800
1000
Drain-Source Voltage, VDS (V)
Figure 18. Capacitances vs. Drain-Source
Figure 17. Capacitances vs. Drain-Source
Voltageꢀ(0-1000ꢀV)
Voltageꢀ(0-200ꢀV)
5
C2M0045170D Rev. -, 06-2016
Typical Performance
80
70
60
50
40
30
20
10
0
600
500
400
300
200
100
0
Conditions:
TJ ≤ 150 °C
Conditions:
TJ ≤ 150 °C
-55
-30
-5
20
45
70
95
120
145
-55
-30
-5
20
45
70
95
120
145
Case Temperature, TC (°C)
Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
100.00
10 µs
Limited by RDS On
100 µs
100E-3
0.5
0.3
1 ms
10.00
100 ms
0.1
0.05
1.00
0.10
0.01
10E-3
1E-3
0.02
SinglePulse
0.01
Conditions:
TC = 25 °C
D = 0,
Parameter:tp
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
Drain-Source Voltage, VDS (V)
Figure 21. Transient Thermal Impedance
Figure 22. Safe Operating Area
(Junctionꢀ-ꢀCase)ꢀ
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Conditions:
TJ = 25 °C
Conditions:
TJ = 25 °C
V
R
V
DD = 900 V
G(ext) = 2.5 Ω
GS = -5V/+20 V
V
R
V
DD = 1200 V
G(ext) = 2.5 Ω
GS = -5V/+20 V
ETotal
ETotal
FWD = C2M0045170D
L = 105 μH
FWD = C2M0045170D
L = 105 μH
EOn
EOn
EOff
EOff
0
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
60
70
80
90
100
Drain to Source Current,IDS (A)
Drain to Source Current,IDS (A)
Figure 23. Clamped Inductive Switching Energy vs.
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDDꢀ=ꢀ900V)
Drain Current (VDDꢀ=ꢀ1200V)
6
C2M0045170D Rev. -, 06-2016
Typical Performance
8
7
6
5
4
3
2
1
0
Conditions:
TJ = 25 °C
Conditions:
DS = 50 A
I
7
VDD = 1200 V
V
R
V
DD = 1200 V
G(ext) = 2.5 Ω
GS = -5V/+20 V
I
V
DS = 50 A
GS = -5V/+20 V
ETotal
6
5
4
3
2
1
0
FWD = C2M0045170D
L = 105 μH
FWD = C2M0045170D
(- - -) FWD = C3D25170H
L = 105 μH
ETotal
EOn
EOn
ETotal
EOn
EOff
EOff
EOff
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
160
140
120
100
80
Conditions:
TJ = 25 °C
V
I
V
DD = 1200 V
DS = 50 A
GS = -5V/+20 V
td(off)
FWD = C2M0045170D
L = 105 μH
td(on)
60
tf
40
tr
20
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
Figure 27. Switching Times vs. RG(ext)ꢀ
7
C2M0045170D Rev. -, 06-2016
Test Circuit Schematic
Q1
RG
C2M0045170D
VGS= - 5V
VDC
Q2
RG
C2M0045170D
D.U.T
Figure 29a. Clamped Inductive Switching Test Circuit using
MOSFET intristic body diode
C3D25170H
25A, 1700V
SiC Schottky
D1
VDC
Q2
RG
D.U.T
C2M0045170D
Figure 29b. Clamped Inductive Switching Test Circuit using
SiC Schottky diode
ESD Ratings
ESD Test
Total Devices Sampled
Resulting Classification
ESD-HBM
ESD-CDM
All Devices Passed 4000V
All Devices Passed 1000V
3Aꢀ(>4000V)
IVꢀ(>1000V)
8
C2M0045170D Rev. -, 06-2016
Package Dimensions
Inches
Millimeters
Min
POS
Package TO-247-3
Min
.190
.090
.075
.042
.075
.075
.113
.113
.022
.819
.640
.037
.620
.516
.145
.039
.487
Max
.205
.100
.085
.052
.095
.085
.133
.123
.027
.831
.695
.049
.635
.557
.201
.075
.529
Max
5.21
2.54
2.16
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.25
16.13
14.15
5.10
1.90
13.43
A
A1
A2
b
4.83
2.29
1.91
1.07
1.91
1.91
2.87
2.87
0.55
20.80
16.25
0.95
15.75
13.10
3.68
1.00
12.38
b1
b2
b3
b4
c
D
D1
D2
E
E1
E2
E3
E4
e
.214 BSC
3
5.44 BSC
N
3
L
.780
.800
.173
.144
.236
.248
11˚
11˚
8˚
19.81
4.10
3.51
5.49
6.04
9˚
20.32
4.40
3.65
6.00
6.30
11˚
11˚
8˚
Pinout Information:
T
U
L1
ØP
Q
.161
.138
.216
.238
9˚
•ꢀ Pin 1 = Gate
•ꢀ Pin 2, 4 = Drain
•ꢀ Pin 3 = Source
S
V
W
T
U
9˚
9˚
V
2˚
2˚
W
2˚
8˚
2˚
8˚
Recommended Solder Pad Layout
TO-247-3
9
C2M0045170D Rev. -, 06-2016
Notes
•ꢀ RoHSꢀCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
•ꢀ REAChꢀCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
•ꢀ This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
toꢀequipmentꢀusedꢀinꢀtheꢀoperationꢀofꢀnuclearꢀfacilities,ꢀlife-supportꢀmachines,ꢀcardiacꢀdefibrillatorsꢀorꢀsimilarꢀemergencyꢀmedicalꢀ
equipment,ꢀaircraftꢀnavigationꢀorꢀcommunicationꢀorꢀcontrolꢀsystems,ꢀairꢀtrafficꢀcontrolꢀsystems.
Related Links
•
•
•
C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
10
C2M0045170D Rev. -, 06-2016
相关型号：
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