C460EZ950-S42000-3-X [CREE]
Single Color LED;
| 型号： | C460EZ950-S42000-3-X |
| 厂家： | 
CREE, INC |
| 描述： | Single Color LED |
| 文件： | 总6页 (文件大小：361K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cree® EZ950™ Gen 3 LEDs
Data Sheet
CxxxEZ950-Sxx000-3-x
®
Cree’s EZBright LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device submount technology to deliver superior value for high-
intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
Additionally, these LEDs are die-attachable with conductive adhesive, solder paste or solder preforms, as well as flux
eutectic attach. These vertically structured, low forward voltage LED chips are approximately 170 microns in height.
Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad
range of applications such as general illumination, automotive lighting and mobile flash.
FEATURES
APPLICATIONS
●
EZBright LED Technology
●
General Illumination
»
»
»
»
450 nm – 440+ mW
460 nm – 420+ mW
470 nm – 400+ mW
527 nm – 170+ mW
»
»
»
»
Aircraft
Decorative Lighting
Task Lighting
Outdoor Illumination
●
●
Lambertian Radiation Pattern
●
●
●
●
White LEDs
Backside Metal versions for various attach methods:
Projection Displays
Automotive Exterior
Mobile Flash
»
“-A” (AuSn) for use with Conductive Adhesives, Flux
Eutectic Attach, Solder Paste & Solder Preforms
»
“-G” (LTDA) for Low Temperature Flux Eutectic Attach
●
●
●
Low Forward Voltage
Dielectric Passivation across the Epi Surface
Anode-up design
CxxxEZ950-Sxx000-3-x Chip Diagram
Backside Ohmic
Metallization
930 x 930 µm
Mesa (Junction), 900 x 900 µm
Bond pads (2), 130 x 130 µm
Anode (+), 2 places
Cathode (-)
Top View
Side View
Bottom View
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°CNote 1, 2 & 3
DC Forward Current
CxxxEZ950-Sxx000-3-x
1000 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
1500 mA
150°C
Reverse Voltage
5 V
Operating Temperature Range
-40°C to +100°C
-40°C to +120°C
≤30°C / ≤85% RH
LED Chip Storage Temperature Range
Recommended Die Sheet Storage Conditions
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
3.1
Max.
Max.
Typ.
20
C450EZ950-Sxx000-3-x
C460EZ950-Sxx000-3-x
C470EZ950-Sxx000-3-x
C527EZ950-Sxx000-3-x
2.7
2.7
2.7
2.8
3.4
3.4
3.4
3.8
2
2
2
2
3.1
21
3.1
22
3.25
35
Mechanical Specifications
Description
CxxxEZ950-Sxx000-3-x
Dimensions
Tolerance
± 35
P-N Junction Area (μm)
Chip Area (μm)
900 x 900
930 x 930
170
± 35
Chip Thickness (μm)
± 25
Top Au Bond Pad (μm) - Qty. 2
Au Bond Pad Thickness (μm)
Backside Ohmic Metal Area (μm)
130 x 130
1.0
± 25
± 0.5
± 35
930 x 930
3.0
Backside Ohmic Metal Thickness (μm) – “-A” (AuSn)
Backside Ohmic Metal Thickness (μm) – “-G” (LTDA)
± 1.5
± 1.5
3.3
Notes:
1.
Maximum ratings are package-dependent. The above ratings were determined using a silicone encapsulated chip on MCPCB for
characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package
to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See the Cree EZBright
Applications Note for assembly-process information.
2.
All products conform to the listed minimum and maximum
specifications for electrical and optical characteristics
1200
when assembled and operated at 350 mA within the
maximum ratings shown above. Efficiency decreases
at higher currents. Typical values given are within the
1000
range of average values expected by the manufacturer in
large quantities and are provided for information only. All
800
measurements were made using a Au-plated TO header
without an encapsulant. Optical characteristics were
measured in an integrating sphere using Illuminance E.
600
Rth j-a = 10 °C/W
Rth j-a = 15 °C/W
Rth j-a = 20 °C/W
Rth j-a = 25 °C/W
3.
The maximum forward current is determined by the
thermal resistance between the LED junction and
ambient. It is crucial for the end-product to be designed
in a manner that minimizes the thermal resistance from
the LED junction to ambient in order to optimize product
performance.
400
200
0
25
50
75
100
125
150
AmbientTemperature (°C)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ950™ are trademarks of Cree, Inc.
2
CPR3FW Rev A
Standard Bins for CxxxEZ950-Sxx000-3-x
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxEZ950-Sxx000-3-x) orders may be filled with any or all bins (CxxxEZ950-0xxx-3-x)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant
flux values are measured using Au-plated headers without an encapsulant.
C450EZ950-S44000-3-x
C450EZ950-0333-3-x
C450EZ950-0329-3-x
C450EZ950-0325-3-x
C450EZ950-0321-3-x
C450EZ950-0317-3-x
C450EZ950-0313-3-x
C450EZ950-0309-3-x
C450EZ950-0334-3-x
C450EZ950-0330-3-x
C450EZ950-0326-3-x
C450EZ950-0322-3-x
C450EZ950-0318-3-x
C450EZ950-0314-3-x
C450EZ950-0310-3-x
C450EZ950-0335-3-x
C450EZ950-0331-3-x
C450EZ950-0327-3-x
C450EZ950-0323-3-x
C450EZ950-0319-3-x
C450EZ950-0315-3-x
C450EZ950-0311-3-x
C450EZ950-0336-3-x
C450EZ950-0332-3-x
C450EZ950-0328-3-x
C450EZ950-0324-3-x
C450EZ950-0320-3-x
C450EZ950-0316-3-x
C450EZ950-0312-3-x
560
540
520
500
480
460
440
445
447.5
450
452.5
455
Dominant Wavelength (nm)
C460EZ950-S42000-3-x
C460EZ950-0329-3-x
C460EZ950-0325-3-x
C460EZ950-0321-3-x
C460EZ950-0317-3-x
C460EZ950-0313-3-x
C460EZ950-0309-3-x
C460EZ950-0305-3-x
C460EZ950-0330-3-x
C460EZ950-0326-3-x
C460EZ950-0322-3-x
C460EZ950-0318-3-x
C460EZ950-0314-3-x
C460EZ950-0310-3-x
C460EZ950-0306-3-x
C460EZ950-0331-3-x
C460EZ950-0327-3-x
C460EZ950-0323-3-x
C460EZ950-0319-3-x
C460EZ950-0315-3-x
C460EZ950-0311-3-x
C460EZ950-0307-3-x
C460EZ950-0332-3-x
C460EZ950-0328-3-x
C460EZ950-0324-3-x
C460EZ950-0320-3-x
C460EZ950-0316-3-x
C460EZ950-0312-3-x
C460EZ950-0308-3-x
540
520
500
480
460
440
420
455
457.5
460
Dominant Wavelength (nm)
462.5
465
Cree, Inc.
4600 Silicon Drive
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ950™ are trademarks of Cree, Inc.
Durham, NC 27703-8475 USA
Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
3
CPR3FW Rev A
Standard Bins for CxxxEZ950-Sxx000-3-x
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxEZ950-Sxx000-3-x) orders may be filled with any or all bins (CxxxEZ950-0xxx-3)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant
flux values are measured using Au-plated headers without an encapsulant.
C470EZ950-S40000-3-x
C470EZ950-0321-3-x
C470EZ950-0317-3-x
C470EZ950-0313-3-x
C470EZ950-0309-3-x
C470EZ950-0305-3-x
C470EZ950-0301-3-x
C470EZ950-0322-3-x
C470EZ950-0318-3-x
C470EZ950-0314-3-x
C470EZ950-0310-3-x
C470EZ950-0306-3-x
C470EZ950-0302-3-x
C470EZ950-0323-3-x
C470EZ950-0319-3-x
C470EZ950-0315-3-x
C470EZ950-0311-3-x
C470EZ950-0307-3-x
C470EZ950-0303-3-x
C470EZ950-0324-3-x
C470EZ950-0320-3-x
C470EZ950-0316-3-x
C470EZ950-0312-3-x
C470EZ950-0308-3-x
C470EZ950-0304-3-x
500
480
460
440
420
400
465
467.5
470
472.5
475
Dominant Wavelength (nm)
C527EZ950-S17000-3-x
C527EZ950-0316-3-x
C527EZ950-0317-3-x
C527EZ950-0314-3-x
C527EZ950-0311-3-x
C527EZ950-0308-3-x
C527EZ950-0305-3-x
C527EZ950-0318-3-x
C527EZ950-0315-3-x
C527EZ950-0312-3-x
C527EZ950-0309-3-x
C527EZ950-0306-3-x
250
230
210
190
170
C527EZ950-0313-3-x
C527EZ950-0310-3-x
C527EZ950-0307-3-x
C527EZ950-0304-3-x
520
525
530
535
Dominant Wavelength (nm)
Cree, Inc.
4600 Silicon Drive
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ950™ are trademarks of Cree, Inc.
Durham, NC 27703-8475 USA
Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
4
CPR3FW Rev A
Characteristic Curves, TA = 25°C
This is a representative measurement for the EZ950™ Gen 3 LED product. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Relative Intensity vs. Forward Current
Relative Light IntensityVs Junction Temperature
300%
250%
200%
150%
100%
50%
100%
95%
90%
85%
80%
75%
70%
65%
0%
25
50
75
100
125
150
0
250
500
If (mA)
750
1000
1250
Junction Temperature (°C)
DominantWavelengthShiftVs Junction Temperature
Wavelength Shiftvs. Forward Current
12
9
6
5
6
4
3
3
0
2
-3
-6
-9
1
0
-1
-2
-12
0
250
500
If (mA)
750
1000
1250
25
50
75
100
125
150
Junction Temperature (°C)
Voltage ShiftVs Junction Temperature
Forward Currentvs. Forward Voltage
0.000
-0.100
-0.200
-0.300
-0.400
-0.500
1250
1000
750
500
250
0
25
50
75
100
125
150
2
2.5
3
3.5
4
Junction Temperature (°C)
Vf (V)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ950™ are trademarks of Cree, Inc.
5
CPR3FW Rev A
Radiation Pattern
This is a representative radiation pattern for the EZ Gen 3 LED product. Actual patterns will vary slightly for each chip.
Cree, Inc.
4600 Silicon Drive
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ950™ are trademarks of Cree, Inc.
Durham, NC 27703-8475 USA
Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
6
CPR3FW Rev A
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