C460MB290-S0101 [CREE]

Visible LED;
C460MB290-S0101
型号: C460MB290-S0101
厂家: CREE, INC    CREE, INC
描述:

Visible LED

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®
G SiC Technology  
MegaBright™ LEDs  
CXXX-MB290-S0100  
®
The Leader in Silicon Carbide Solid State Technology  
Features  
Applications  
MegaBright™ Performance  
– 11.0mW (460nm) Deep Blue  
– 10.0mW (470nm) Blue  
Outdoor LED Video Displays  
Automotive Dashboard Lighting  
White LEDs  
– 8.0mW (505nm) Traffic Green  
– 7.0mW (527nm) Green  
Single Wire Bond Structure  
Class II ESD Rating  
Backlighting  
Traffic Signals  
Description  
Cree's MB™ series of MegaBright™ LEDs combine highly efficient InGaN materials with Cree's  
proprietary SiC® substrate to deliver superior price/performance for high intensity blue and green LEDs.  
These LED chips have a geometrically enhanced vertical chip structure to maximize light extraction  
efficiency, and require only a single wire bond connection. Sorted Die Kits provide die sheets conveniently  
sorted into wavelength and radiant flux bins. Cree's MB series chips are individually tested for conformity  
to optical and electrical specifications and the ability to withstand 1000V ESD. These LEDs are useful in a  
broad range of applications such as outdoor full motion LED video signs, automotive lighting and white  
LEDs, yet can also be used in high volume applications such as LCD backlighting. Cree's MB series chips  
are compatible with most radial and SMT LED assembly processes.  
CXXX-MB290-S0100 Chip Diagram  
side View  
Bottom View  
Die Cross Section  
G SiC® LED Chip  
300 x 300 µm  
Anode (+)  
h = 250 µm  
InGaN  
Mesa (junction)  
240 x 240 µm  
SiC Substrate  
Backside  
Metallization  
Gold Bond Pad  
114 µm Diameter  
Cathode (-)  
CPR3AP Rev. C  
© Cree, Inc. 2001-03 All Rights Reserved.  
®
G SiC Technology  
MegaBright™ LEDs  
CXXX-MB290-S0100  
Maximum Ratings at TA = 25°C Notes 1&3  
DC Forward Current  
CXXX-MB290-S0100  
30mA  
Peak Forward Current (1/10 duty cycle @ 1kHz)  
LED Junction Temperature  
100mA  
125°C  
Reverse Voltage  
5 V  
Operating Temperature Range  
-20°C to +80°C  
-30°C to +100°C  
1000 V  
Storage Temperature Range  
Electrostatic Discharge Threshold (HBM) Note 2  
Electrostatic Discharge Classification (MIL-STD-883E) Note 2  
Class 2  
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20mA Note 3  
Forward Voltage  
(Vf, V)  
Reverse Current  
[I(Vr=5V), µA]  
Peak Wavelength  
Full Width Half Max  
Optical Rise Time  
Part Number  
(λp, nm)  
(λD, nm)  
(τ, ns)  
Typ  
Max  
Max  
Typ  
Typ  
Typ  
C460MB290-S0100  
C470 MB290-S0100  
C505 MB290-S0100  
C527 MB290-S0100  
3.5  
3.5  
3.8  
3.8  
3.8  
3.8  
4.0  
4.0  
10  
10  
10  
10  
458  
468  
502  
518  
26  
26  
30  
35  
30  
30  
30  
30  
Mechanical Specifications Note 4  
Description  
CXXX-MB290-S0100  
Dimension  
240 x 240  
300 x 300  
200 x 200  
250  
Tolerance  
± 25  
P-N Junction Area (µm)  
Top Area (µm)  
± 25  
Bottom Area (µm)  
± 25  
Chip Thickness (µm)  
± 25  
Au Bond Pad Diameter (µm)  
Au Bond Pad Thickness (µm)  
Back Contact Metal Width (µm)  
114  
± 20  
1.2  
± 0.5  
15  
-5, +10  
Notes:  
1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package with Hysol OS4000 epoxy for characterization. Seller  
makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the  
G •SiC die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction  
temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 350°C (< 15 minutes).  
2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are  
designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD.  
3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA within  
the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are the average values expected by Seller in large quantities and  
are provided for information only. Seller gives no assurances Products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1  
3/4 packages with Hysol OS4000 epoxy. Optical characteristics were measured in a Photoresearch Spectrascan Integrating Sphere. Illuminance E.  
4)  
5)  
All Products conform to the listed mechanical specifications within the tolerances shown.  
Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80µm.  
CPR3AP Rev. C  
© Cree, Inc. 2001-03 All Rights Reserved.  
®
G SiC Technology  
MegaBright™ LEDs  
CXXX-MB290-S0100  
®
The Leader in Silicon Carbide Solid State Technology  
Standard Bins for MB290:  
All LED chips are sorted onto die sheets according to the bins shown below.  
20.0mW  
460MB290-0105  
460MB290-0103  
460MB290-0101  
460MB290-0106  
460MB290-0104  
460MB290-0102  
13.0mW  
11.0mW  
8.0mW  
C460MB290-S0100  
Sorted Die Kits may contain any or all  
bins shown to the left.  
455nm  
460nm  
465nm  
16.0mW  
12.0mW  
10.0mW  
7.5mW  
470MB290-0107  
470MB290-0104  
470MB290-0101  
470MB290-0108  
470MB290-0105  
470MB290-0109  
C470MB290-S0100  
470MB290-0106  
470MB290-0102  
465nm  
470nm  
472nm  
475nm  
10.0mW  
8.0mW  
7.0mW  
6.0mW  
505MB290-0105  
505MB290-0103  
505MB290-0101  
505MB290-0106  
505MB290-0104  
505MB290-0102  
C505MB290-S0100  
500nm  
505nm  
510nm  
8.0mW  
7.0mW  
6.0mW  
5.0mW  
527MB290-0107  
527MB290-0104  
527MB290-0101  
527MB290-0108  
527MB290-0105  
527MB290-0102  
527MB290-0109  
C527MB290-S0100  
527MB290-0106  
527MB290-0103  
520nm  
525nm  
530nm  
535nm  
CPR3AP Rev. C  
© Cree, Inc. 2001-03 All Rights Reserved.  
®
G SiC Technology  
MegaBright™ LEDs  
CXXX-MB290-S0100  
Characteristic Curves  
Wavelength Shift vs Forward Current - All Products  
Relative Intensity vs Forward Current - All Products  
16.0  
14.0  
12.0  
10.0  
8.0  
140.0  
120.0  
100.0  
80.0  
60.0  
40.0  
20.0  
0.0  
6.0  
4.0  
2.0  
527nm  
505nm  
470nm  
0.0  
-2.0  
-4.0  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
If (mA)  
20  
25  
30  
If (mA)  
Forward Current vs Forward Voltage - All Products  
Relative Intensity vs Wavelength - All Products  
30  
25  
20  
15  
10  
5
100%  
80%  
60%  
40%  
20%  
0%  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
500  
Vf (V)  
Wavelength (nm)  
CPR3AP Rev. C  
© Cree, Inc. 2001-03 All Rights Reserved.  

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