C460MB290-S0101 [CREE]
Visible LED;型号: | C460MB290-S0101 |
厂家: | CREE, INC |
描述: | Visible LED |
文件: | 总4页 (文件大小:235K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
®
•
G SiC Technology
MegaBright™ LEDs
CXXX-MB290-S0100
®
The Leader in Silicon Carbide Solid State Technology
Features
Applications
• MegaBright™ Performance
– 11.0mW (460nm) Deep Blue
– 10.0mW (470nm) Blue
• Outdoor LED Video Displays
• Automotive Dashboard Lighting
• White LEDs
– 8.0mW (505nm) Traffic Green
– 7.0mW (527nm) Green
• Single Wire Bond Structure
• Class II ESD Rating
• Backlighting
• Traffic Signals
Description
Cree's MB™ series of MegaBright™ LEDs combine highly efficient InGaN materials with Cree's
proprietary SiC® substrate to deliver superior price/performance for high intensity blue and green LEDs.
These LED chips have a geometrically enhanced vertical chip structure to maximize light extraction
efficiency, and require only a single wire bond connection. Sorted Die Kits provide die sheets conveniently
sorted into wavelength and radiant flux bins. Cree's MB series chips are individually tested for conformity
to optical and electrical specifications and the ability to withstand 1000V ESD. These LEDs are useful in a
broad range of applications such as outdoor full motion LED video signs, automotive lighting and white
LEDs, yet can also be used in high volume applications such as LCD backlighting. Cree's MB series chips
are compatible with most radial and SMT LED assembly processes.
CXXX-MB290-S0100 Chip Diagram
side View
Bottom View
Die Cross Section
G • SiC® LED Chip
300 x 300 µm
Anode (+)
h = 250 µm
InGaN
Mesa (junction)
240 x 240 µm
SiC Substrate
Backside
Metallization
Gold Bond Pad
114 µm Diameter
Cathode (-)
CPR3AP Rev. C
© Cree, Inc. 2001-03 All Rights Reserved.
®
•
G SiC Technology
MegaBright™ LEDs
CXXX-MB290-S0100
Maximum Ratings at TA = 25°C Notes 1&3
DC Forward Current
CXXX-MB290-S0100
30mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
100mA
125°C
Reverse Voltage
5 V
Operating Temperature Range
-20°C to +80°C
-30°C to +100°C
1000 V
Storage Temperature Range
Electrostatic Discharge Threshold (HBM) Note 2
Electrostatic Discharge Classification (MIL-STD-883E) Note 2
Class 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20mA Note 3
Forward Voltage
(Vf, V)
Reverse Current
[I(Vr=5V), µA]
Peak Wavelength
Full Width Half Max
Optical Rise Time
Part Number
(λp, nm)
(λD, nm)
(τ, ns)
Typ
Max
Max
Typ
Typ
Typ
C460MB290-S0100
C470 MB290-S0100
C505 MB290-S0100
C527 MB290-S0100
3.5
3.5
3.8
3.8
3.8
3.8
4.0
4.0
10
10
10
10
458
468
502
518
26
26
30
35
30
30
30
30
Mechanical Specifications Note 4
Description
CXXX-MB290-S0100
Dimension
240 x 240
300 x 300
200 x 200
250
Tolerance
± 25
P-N Junction Area (µm)
Top Area (µm)
± 25
Bottom Area (µm)
± 25
Chip Thickness (µm)
± 25
Au Bond Pad Diameter (µm)
Au Bond Pad Thickness (µm)
Back Contact Metal Width (µm)
114
± 20
1.2
± 0.5
15
-5, +10
Notes:
1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package with Hysol OS4000 epoxy for characterization. Seller
makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the
G •SiC die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction
temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 350°C (< 15 minutes).
2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are
designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD.
3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA within
the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are the average values expected by Seller in large quantities and
are provided for information only. Seller gives no assurances Products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1
3/4 packages with Hysol OS4000 epoxy. Optical characteristics were measured in a Photoresearch Spectrascan Integrating Sphere. Illuminance E.
4)
5)
All Products conform to the listed mechanical specifications within the tolerances shown.
Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80µm.
CPR3AP Rev. C
© Cree, Inc. 2001-03 All Rights Reserved.
®
•
G SiC Technology
MegaBright™ LEDs
CXXX-MB290-S0100
®
The Leader in Silicon Carbide Solid State Technology
Standard Bins for MB290:
All LED chips are sorted onto die sheets according to the bins shown below.
20.0mW
460MB290-0105
460MB290-0103
460MB290-0101
460MB290-0106
460MB290-0104
460MB290-0102
13.0mW
11.0mW
8.0mW
C460MB290-S0100
Sorted Die Kits may contain any or all
bins shown to the left.
455nm
460nm
465nm
16.0mW
12.0mW
10.0mW
7.5mW
470MB290-0107
470MB290-0104
470MB290-0101
470MB290-0108
470MB290-0105
470MB290-0109
C470MB290-S0100
470MB290-0106
470MB290-0102
465nm
470nm
472nm
475nm
10.0mW
8.0mW
7.0mW
6.0mW
505MB290-0105
505MB290-0103
505MB290-0101
505MB290-0106
505MB290-0104
505MB290-0102
C505MB290-S0100
500nm
505nm
510nm
8.0mW
7.0mW
6.0mW
5.0mW
527MB290-0107
527MB290-0104
527MB290-0101
527MB290-0108
527MB290-0105
527MB290-0102
527MB290-0109
C527MB290-S0100
527MB290-0106
527MB290-0103
520nm
525nm
530nm
535nm
CPR3AP Rev. C
© Cree, Inc. 2001-03 All Rights Reserved.
®
•
G SiC Technology
MegaBright™ LEDs
CXXX-MB290-S0100
Characteristic Curves
Wavelength Shift vs Forward Current - All Products
Relative Intensity vs Forward Current - All Products
16.0
14.0
12.0
10.0
8.0
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
6.0
4.0
2.0
527nm
505nm
470nm
0.0
-2.0
-4.0
0
5
10
15
20
25
30
0
5
10
15
If (mA)
20
25
30
If (mA)
Forward Current vs Forward Voltage - All Products
Relative Intensity vs Wavelength - All Products
30
25
20
15
10
5
100%
80%
60%
40%
20%
0%
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
500
Vf (V)
Wavelength (nm)
CPR3AP Rev. C
© Cree, Inc. 2001-03 All Rights Reserved.
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