C460UB291-S0100 [CREE]
Visible LED;
| 型号： | C460UB291-S0100 |
| 厂家： | 
CREE, INC |
| 描述： | Visible LED |
| 文件： | 总5页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
•
G SiC Technology
UltraBright™ LEDs
CxxxUB29x-S0100
Features
Applications
• UltraBright™ LED Performance
• LED Video Displays
– 3.8mW min (460nm) Deep Blue
– 3.4mW min (470nm) Blue
• White LEDs
– 2.5mW min (505nm) Signal Green
– 1.7mW min (527nm) Green
• Automotive Dashboard Lighting
• Cellular Phone Backlighting
• Audio Product Display Lighting
• Sorted to Wavelength and Power Bins
• Single Wire Bond Structure
• Class II ESD Rating
Description
Cree's UB™ series of UltraBright™ LEDs combine highly efficient InGaN materials with Cree's
proprietary G⋅SiC substrate to deliver excellent price performance for high intensity blue and green
LEDs. UltraBright LED chips are available in a geometrically enhanced vertical structure or a straight-
wall design for use in reflector-less applications such as ChipLEDs. Both require only a single wire
bond connection. Sorted Die Kits provide die sheets conveniently sorted into wavelength and radiant
flux bins. Cree's UB series chips are tested for conformity to optical and electrical specifications and
the ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as
outdoor and indoor full motion LED video signs, transportation signaling and white LEDs, yet can also
be used in high volume applications such as LCD backlighting. Cree's UB series chips are compatible
with most radial and SMT LED assembly processes.
CxxxUB29x-S0100 Chip Diagram
Die Cross Section (UB290)
Straight-wall design (UB291)
Topside View
G·SiC ® LED Chip
300 x 300 µm (UB290)
Anode (+)
h = 250 µm
Cathode (-)
275 x 275 m (UB291)
µ
InGaN
InGaN
Mesa (junction)
240 x 240 µm
SiC Substrate
SiC Substrate
Backside
Metallization
Gold Bond Pad
114 µm Diameter
CPR3AG Rev. H
© 2000-2003 Cree, Inc. All Rights Reserved.
®
•
G SiC Technology
UltraBright™ LEDs
CxxxUB29x-S0100
Maximum Ratings at TA = 25°C Notes 1&3
CxxxUB29x-S0100
30 mA
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
100 mA
125°C
Reverse Voltage
5 V
Operating Temperature Range
-40°C to +100°C
-40°C to +100°C
1000 V
Storage Temperature Range
Electrostatic Discharge Threshold (HBM) Note 2
Electrostatic Discharge Classification (MIL-STD-883E) Note 2
Class 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20mA Note 3
Forward Voltage
(Vf, V)
Reverse Current
[I(Vr=5V), µA]
Peak Wavelength
Full Width Half Max
Optical Rise Time
Part Number
(λp, nm)
(λD, nm)
(τ, ns)
Min Typ Max
Max
Typ
Typ
Typ
C460UB29x-S0100
C470UB29x-S0100
C505UB29x-S0100
C527UB29x-S0100
3.0
3.0
3.0
3.0
3.5
3.5
3.5
3.5
3.9
3.9
3.9
3.9
10
10
10
10
458
468
502
518
26
26
30
36
30
30
30
30
Mechanical Specifications Note 4
Description
CxxxUB29x-S0100
Dimension
240 x 240
300 x 300
200 x 200
275 x 275
300 x 300
250
Tolerance
± 25
P-N Junction Area (µm)
UB290 Top Area (µm)
UB290 Bottom Area (µm)
UB291 Top Area (µm)
UB291 Bottom Area (µm)
Chip Thickness (µm)
± 25
± 25
± 25
± 25
± 25
Au Bond Pad Diameter (µm)
Au Bond Pad Thickness (µm)
Back Contact Metal Width
114
± 20
1.2
± 0.5
-5, +10
20
Notes:
1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for
characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED
junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be
characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2) Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD
classification of Class II is based on sample testing according to MIL-STD 883E.
3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20
mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values
expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages
(with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.
4) Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80µm.
5) Specifications are subject to change without notice.
CPR3AG Rev. H
© 2000-2003 Cree, Inc. All Rights Reserved.
®
•
G SiC Technology
UltraBright™ LEDs
CxxxUB29x-S0100
Standard Bins for CxxxUB290-S0100:
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only
one bin. Sorted die kit (CxxxUB290-S0100) orders may be filled with any or all bins (CxxxUB290-010x) contained in the
kit.
8.0mW
C460UB290-S0100
460UB290-0103
460UB290-0104
6.0mW
3.8mW
460UB290-0101
460UB290-0102
455nm
460nm
465nm
Dominant Wavelength
7.5mW
5.5mW
3.4mW
C470UB290-S0100
470UB290-0103
470UB290-0104
470UB290-0101
465nm
470UB290-0102
470nm
475nm
Dominant Wavelength
6.0mW
4.0mW
2.5mW
C505UB290-S0100
505UB290-0103
505UB290-0104
505UB290-0101
500nm
505UB290-0102
505nm
510nm
Dominant Wavelength
5.0mW
C527UB290-S0100
527UB290-0104
527UB290-0105
527UB290-0106
527UB290-0103
3.5mW
1.7mW
527UB290-0101
527UB290-0102
520nm
525nm
Dominant Wavelength
530nm
535nm
CPR3AG Rev. H
© 2000-2003 Cree, Inc. All Rights Reserved.
®
•
G SiC Technology
UltraBright™ LEDs
CxxxUB29x-S0100
Standard Bins for CxxxUB291-S0100:
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only
one bin. Sorted die kit (CxxxUB291-S0100) orders may be filled with any or all bins (CxxxUB291-010x) contained in the
kit.
11.0mW
C460UB291-S0100
460UB291-0105
460UB291-0103
460UB291-0101
460UB291-0106
460UB291-0104
460UB291-0102
8.0mW
6.0mW
3.8mW
455nm
460nm
465nm
Dominant Wavelength
10.0mW
7.5mW
5.5mW
3.4mW
C470UB291-S0100
470UB291-0107
470UB291-0108
470UB291-0106
470UB291-0103
470UB291-0105
470UB291-0101
465nm
470nm
Dominant Wavelength
475nm
6.0mW
4.0mW
2.5mW
C505UB291-S0100
505UB291-0103
505UB291-0104
505UB291-0101
505UB291-0102
500nm
505nm
Dominant Wavelength
510nm
5.0mW
3.5mW
1.7mW
C527UB291-S0100
527UB291-0104
527UB291-0105
527UB291-0106
527UB291-0101
527UB291-0102
527UB291-0103
530nm
520nm
525nm
Dominant Wavelength
535nm
CPR3AG Rev. H
© 2000-2003 Cree, Inc. All Rights Reserved.
®
•
G SiC Technology
UltraBright™ LEDs
CxxxUB29x-S0100
Characteristic Curves
Relative Intensity vs Forward Current - All Products
Wavelength Shift vs Forward Current - All Products
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
527nm
505nm
470nm
0.0
-2.0
-4.0
0
5
10
15
If (mA)
20
25
30
0
5
10
15
20
25
30
If (mA)
Forward Current vs Forward Voltage - All Products
Relative Intensity vs Wavelength - All Products
30
25
20
15
10
5
100%
80%
60%
40%
20%
0%
0
0.0
0.5
1.0
1.5
2.0
2.5
Vf (V)
3.0
3.5
4.0
4.5
5.0
500
Wavelength (nm)
CPR3AG Rev. H
© 2000-2003 Cree, Inc. All Rights Reserved.
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