概述
数据手册C470RT200-0306 概述
Reduced Forward Voltage 3.0 V Typical at 5 mA 降低正向电压为3.0 V时典型5毫安
C470RT200-0306 数据手册
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RazerThin Gen III LEDs
CxxxRT200-Sxxxx
Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green
LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward
voltage. Cree’s RazerThin series chips have the ability to withstand 1000 V ESD.
FEATURES
APPLICATIONS
•
•
Thin 95 μm Chip
Reduced Forward Voltage
3.0 V Typical at 5 mA
RazerThin LED Performance
•
Mobile Phone Key Pads
–
–
–
White LEDs
Blue LEDs
–
•
Green LEDs
–
–
–
460 nm - 10 mW min.
470 nm - 8 mW min.
527 nm - 2 mW min.
•
•
•
•
Cellular Phone LCD Backlighting
Automotive Dashboard Lighting
LED Video Displays
•
•
Single Wire Bond Structure
Class 2 ESD Rating
Audio Product Display Lighting
CxxxRT200-Sxxxx Chip Diagram
Top View
Die Cross Section
Bottom View
170 x 170 μm
G•SiC LED Chip
200 x 200 μm
Anode (+)
t = 95 μm
Gold Bond Pad
112 μm Diameter
Backside
Metallization
Cathode (-)
90 μm square
Subject to change without notice.
www.cree.com
ꢀ
Maximum Ratings at TA = 25°CNotes ꢀ&3
DC Forward Current
CxxxRT200-Sxxxx
30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
100 mA
125°C
Reverse Voltage
5 V
Operating Temperature Range
Storage Temperature Range
-40°C to +100°C
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, IF = 5 mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max.
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
3.0
Max.
Max.
Typ.
24
C460RT200-Sxxxx
C470RT200-Sxxxx
C527RT200-Sxxxx
2.7
2.7
2.7
3.3
3.3
3.4
1
1
1
3.0
25
3.1
40
Mechanical Specifications
Description
CxxxRT200-Sxxxx
Dimension
Tolerance
± 35
P-N Junction Area (μm)
Top Area (μm)
150 x 150
200 x 200
170 x 170
95
± 35
Bottom Area (μm)
± 35
Chip Thickness (μm)
± 15
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Width (μm)
112
± 20
1.0
± 0.5
± 10
90
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)
for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.
The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the
package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized
in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding
the ability of Products to withstand ESD.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are
the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances products
shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000
epoxy). Dominant wavelength measurements taken using Illuminance E.
4. Specifications are subject to change without notice.
Cree, Inc.
4600 Silicon Drive
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3DS Rev. -
Standard Bins for CxxxRT200-Sxx000
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxRT200-Sxx000) orders may be filled with any or all bins (CxxxRT200-xxxx) contained
in the kit. All radiant flux values shown and specified are at IF = 20 mA and dominant wavelength values are at IF = 5
mA.
C460RT200-Sꢀ200
C460RT200-0309
C460RT200-0305
C460RT200-0310
C460RT200-0306
C460RT200-0311
C460RT200-0307
C460RT200-0312
C460RT200-0308
14.0 mW
12.0 mW
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Dominant Wavelength
C460RT200-Sꢀ000
C460RT200-0309
C460RT200-0305
C460RT200-0301
C460RT200-0310
C460RT200-0311
C460RT200-0307
C460RT200-0303
C460RT200-0312
C460RT200-0308
C460RT200-0304
14.0 mW
12.0 mW
10.0 mW
C460RT200-0306
C460RT200-0302
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3DS Rev. -
Standard Bins for CxxxRT200-Sxx000 (continued)
C470RT200-Sꢀ200
C470RT200-0313
C470RT200-0309
C470RT200-0314
C470RT200-0310
C470RT200-0315
C470RT200-0311
C470RT200-0316
C470RT200-0312
14.0 mW
12.0 mW
465 nm
467.5 nm
470 nm
472.5 nm
475 nm
Dominant Wavelength
C470RT200-Sꢀ000
C470RT200-0313
C470RT200-0309
C470RT200-0305
C470RT200-0314
C470RT200-0315
C470RT200-0311
C470RT200-0307
C470RT200-0316
C470RT200-0312
C470RT200-0308
14.0 mW
12.0 mW
10.0 mW
C470RT200-0310
C470RT200-0306
465 nm
467.5 nm
470 nm
472.5 nm
475 nm
Dominant Wavelength
C470RT200-S0800
C470RT200-0313
C470RT200-0309
C470RT200-0305
C470RT200-0301
C470RT200-0314
C470RT200-0315
C470RT200-0311
C470RT200-0307
C470RT200-0303
C470RT200-0316
C470RT200-0312
C470RT200-0308
C470RT200-0304
14.0 mW
12.0 mW
10.0 mW
8.0 mW
C470RT200-0310
C470RT200-0306
C470RT200-0302
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3DS Rev. -
Standard Bins for CxxxRT200-Sxx000 (continued)
C527RT200-S0400
C527RT200-0310
C527RT200-0307
C527RT200-0311
C527RT200-0308
C527RT200-0312
C527RT200-0309
5.0 mW
4.0 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
C527RT200-S0300
C527RT200-0310
C527RT200-0307
C527RT200-0304
C527RT200-0311
C527RT200-0312
C527RT200-0309
C527RT200-0306
5.0 mW
4.0 mW
3.0 mW
C527RT200-0308
C527RT200-0305
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
C527RT200-S0200
C527RT200-0310
C527RT200-0307
C527RT200-0304
C527RT200-0301
C527RT200-0311
C527RT200-0312
5.0 mW
4.0 mW
3.0 mW
2.0 mW
C527RT200-0308
C527RT200-0305
C527RT200-0302
C527RT200-0309
C527RT200-0306
C527RT200-0303
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
5
CPR3DS Rev. -
Characteristic Curves
These are representative measurements for the RazerThin products. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Wavelength Shift vs. Forward Current
Forward Current vs. Forward Voltage
5
0
30
25
20
15
10
5
-5
-10
-15
0
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
If (mA)
Vf (V)
Relative Intensity vs. Forward Current
600%
500%
400%
300%
200%
100%
0%
0
5
10
15
20
25
30
If (mA)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
6
CPR3DS Rev. -
C470RT200-0306 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| C470RT200-0307 | CREE | Reduced Forward Voltage 3.0 V Typical at 5 mA | 获取价格 |
|
| C470RT200-0308 | CREE | Reduced Forward Voltage 3.0 V Typical at 5 mA | 获取价格 |
|
| C470RT200-0309 | CREE | Reduced Forward Voltage 3.0 V Typical at 5 mA | 获取价格 |
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| C470RT200-0310 | CREE | Reduced Forward Voltage 3.0 V Typical at 5 mA | 获取价格 |
|
| C470RT200-0311 | CREE | Reduced Forward Voltage 3.0 V Typical at 5 mA | 获取价格 |
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| C470RT200-0312 | CREE | Reduced Forward Voltage 3.0 V Typical at 5 mA | 获取价格 |
|
| C470RT200-0313 | CREE | Reduced Forward Voltage 3.0 V Typical at 5 mA | 获取价格 |
|
| C470RT200-0314 | CREE | Reduced Forward Voltage 3.0 V Typical at 5 mA | 获取价格 |
|
| C470RT200-0315 | CREE | Reduced Forward Voltage 3.0 V Typical at 5 mA | 获取价格 |
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| C470RT200-0316 | CREE | Reduced Forward Voltage 3.0 V Typical at 5 mA | 获取价格 |
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