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C470XT290-S1800-D [CREE]

Visible LED;
C470XT290-S1800-D
型号： C470XT290-S1800-D
厂家： CREE, INC    CREE, INC
描述：

Visible LED
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®
XThin LEDs  
CxxxXT290-Sxx00-x  
Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials  
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED  
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a  
single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and  
require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications  
and the ability to withstand 1000V ESD. Applications for XThin include next-generation mobile appliances for use  
in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption  
are required.  
FEATURES  
APPLICATIONS  
•
XThin LED Performance  
•
•
•
•
SMT Packages  
Cellular Phone LCD Backlighting  
Digital Camera Flash  
–
Blue  
XT-12™ – 12.0 mW min.  
XT-16™ – 16.0 mW min.  
XT-18™ – 18.0 mW min.  
XT-21™ – 21.0 mW min.  
XT-24™ – 24.0 mW min.  
Mobile Appliance Key Pads  
–
–
White LEDs  
Blue LEDs  
•
LED Video Displays  
–
Green – 7.0 mW min.  
•
•
•
•
Low Forward Voltage – 3.2 V Typical at 20 mA  
Class 2 ESD Rating  
Sn Contact for Low-Temp. Die Attach Methods  
Die Attach Options  
–
–
Flux Eutectic; Flux & Temperature (-C)  
Eutectic; Temperature & Pressure (-D)  
CxxxXT290-Sxx00-x Chip Diagram  
Top View  
Bottom View  
Die Cross Section  
G•SiC LED Chip  
300 x 300 μm  
Backside  
Contact  
Metal  
Gold Bond Pad  
105 μm Diameter  
Cathode (-)  
Bottom View for -C  
Bottom View for -D  
SiC Substrate  
t = 115 µm  
Anode (+)  
Subject to change without notice.  
www.cree.com  
ꢀ
Maximum Ratings at TA = 25°CNotes 2&4  
DC Forward Current  
CxxxXT290-Sxx00-x  
30mA  
Peak Forward Current (1/10 duty cycle @ 1kHz)  
LED Junction Temperature  
100mA  
125°C  
Reverse Voltage  
5 V  
Operating Temperature Range  
Storage Temperature Range  
-40°C to +100°C  
-40°C to +100°C  
1000V  
Note 3  
Electrostatic Discharge Threshold (HBM)  
Note 3  
Electrostatic Discharge Classification (MIL-STD-883E)  
Class 2  
Note 4  
Typical Electrical/Optical Characteristics at T = 25°C, If = 20mA  
Reverse Current  
[I(Vr=5V), μA]  
Full Width Half Max  
Part Number  
Forward Voltage (Vf, V)  
(λD, nm)  
Min.  
Typ.  
3.2  
Max.  
Max.  
Typ.  
21  
C460XT290-Sxx00-x  
C470XT290-Sxx00-x  
C527XT290-S0100-A  
2.7  
2.7  
2.7  
3.7  
3.7  
3.7  
2
2
2
3.2  
22  
3.2  
35  
Mechanical Specifications  
Description  
CxxxXT290-Sxx00-x  
Dimension  
Tolerance  
± 25  
P-N Junction Area (μm)  
Top Area (μm)  
250 x 250  
200 x 200  
300 x 300  
115  
± 25  
Bottom Area (μm)  
± 25  
Chip Thickness (μm)  
± 15  
Au Bond Pad Diameter (μm)  
Au Bond Pad Thickness (μm)  
Back Contact Metal Area (μm)  
105  
-5, +15  
± 0.5  
± 25  
1.2  
210 x 210  
2.0  
Back Contact Metal Thickness (μm) -C (Sn Flux Eutectic)  
Back Contact Metal Thickness (μm) -D (Sn Eutectic)  
± 0.3  
± 0.1  
0.5  
Notes:  
1. This product is intended for use in a pre-molded surface mount package. It should be tested in the package and environment  
consistent with the final use to validate applicability. CxxxXT290-Sxx00-C and –D are not intended for use where extended reliable  
operation in high temperature and high humidity environments is required. For this condition or for use in a leaded radial lamp,  
use CxxxXT290-Sxx00-A. See Cree XThin Applications Note for more information.  
2. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000  
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die  
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1  
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing  
temperature must not exceed 325°C (< 5 seconds). See Cree XThin Applications Note for more assembly process information.  
3. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche  
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is  
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.  
4. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled  
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given  
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All  
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an  
integrating sphere using Illuminance E.  
5. Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the  
chip. See Cree XThin Applications Note for more information.  
6. Specifications are subject to change without notice.  
7. XThin chips are shipped with the junction side down, not requiring a die transfer prior to die attach.  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
Copyright © 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,  
the Cree logo, G•SiC and XThin are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21, XT-21 and XT-24 are trademarks  
of Cree, Inc.  
USA Tel: +1.919.313.5300  
www.cree.com  
2
CPR3CE Rev. E  
Standard Bins for XT290  
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die  
from only one bin. Sorted die kit (CxxxXT290-Sxx00-x) orders may be filled with any or all bins (CxxxXB290-01xx-x)  
contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 20 mA.  
XT-24  
XT-2ꢀ  
C460XT290-S2400-x  
C460XT290-0117-x  
C460XT290-0118-x  
C460XT290-0119-x  
C460XT290-0120-x  
24.0 mW  
455 nm  
457.5 nm  
460 nm  
462.5 nm  
465 nm  
Dominant Wavelength  
C460XT290-S2ꢀ00-x  
C460XT290-0117-x  
C460XT290-0113-x  
C460XT290-0118-x  
C460XT290-0119-x  
C460XT290-0115-x  
C460XT290-0120-x  
C460XT290-0116-x  
24.0 mW  
21.0 mW  
C460XT290-0114-x  
455 nm  
457.5 nm  
460 nm  
462.5 nm  
465 nm  
Dominant Wavelength  
XT-ꢀ8  
C460XT290-Sꢀ800-x  
C460XT290-0117-x  
C460XT290-0113-x  
C460XT290-0109-x  
C460XT290-0118-x  
C460XT290-0119-x  
C460XT290-0115-x  
C460XT290-0111-x  
C460XT290-0120-x  
C460XT290-0116-x  
C460XT290-0112-x  
24.0 mW  
21.0 mW  
18.0 mW  
C460XT290-0114-x  
C460XT290-0110-x  
455 nm  
457.5 nm  
460 nm  
462.5 nm  
465 nm  
Dominant Wavelength  
XT-ꢀ6  
C460XT290-Sꢀ600-x  
C460XT290-0117-x  
C460XT290-0113-x  
C460XT290-0109-x  
C460XT290-0105-x  
C460XT290-0118-x  
C460XT290-0119-x  
C460XT290-0115-x  
C460XT290-0111-x  
C460XT290-0107-x  
C460XT290-0120-x  
C460XT290-0116-x  
C460XT290-0112-x  
C460XT290-0108-x  
24.0 mW  
21.0 mW  
18.0 mW  
16.0 mW  
C460XT290-0114-x  
C460XT290-0110-x  
C460XT290-0106-x  
455 nm  
457.5 nm  
460 nm  
Dominant Wavelength  
462.5 nm  
465 nm  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
Copyright © 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,  
the Cree logo, G•SiC and XThin are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21, XT-21 and XT-24 are trademarks  
of Cree, Inc.  
USA Tel: +1.919.313.5300  
www.cree.com  
3
CPR3CE Rev. E  
Standard Bins for XT290 (continued)  
XT-ꢀ2  
C460XT290-Sꢀ200-x  
C460XT290-0117-x  
C460XT290-0113-x  
C460XT290-0109-x  
C460XT290-0105-x  
C460XT290-0101-x  
C460XT290-0118-x  
C460XT290-0114-x  
C460XT290-0110-x  
C460XT290-0106-x  
C460XT290-0102-x  
C460XT290-0119-x  
C460XT290-0115-x  
C460XT290-0111-x  
C460XT290-0107-x  
C460XT290-0103-x  
C460XT290-0120-x  
C460XT290-0116-x  
C460XT290-0112-x  
C460XT290-0108-x  
C460XT290-0104-x  
24.0 mW  
21.0 mW  
18.0 mW  
16.0 mW  
12.0 mW  
455 nm  
457.5 nm  
460 nm  
462.5 nm  
465 nm  
Dominant Wavelength  
XT-2ꢀ  
C470XT290-S2ꢀ00-x  
C470XT290-0113-x  
C470XT290-0114-x  
C470XT290-0115-x  
C470XT290-0116-x  
21.0 mW  
465 nm  
467.5 nm  
470 nm  
472.5 nm  
475 nm  
Dominant Wavelength  
XT-ꢀ8  
C470XT290-Sꢀ800-x  
C470XT290-0113-x  
C470XT290-0109-x  
C470XT290-0114-x  
C470XT290-0115-x  
C470XT290-0111-x  
C470XT290-0116-x  
C470XT290-0112-x  
21.0 mW  
18.0 mW  
C470XT290-0110-x  
465 nm  
467.5 nm  
470 nm  
472.5 nm  
475 nm  
Dominant Wavelength  
XT-ꢀ6  
C470XT290-Sꢀ600-x  
C470XT290-0113-x  
C470XT290-0109-x  
C470XT290-0114-x  
C470XT290-0115-x  
C470XT290-0111-x  
C470XT290-0116-x  
C470XT290-0112-x  
21.0 mW  
18.0 mW  
16.0 mW  
C470XT290-0110-x  
465 nm  
467.5 nm  
470 nm  
Dominant Wavelength  
472.5 nm  
475 nm  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
Copyright © 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,  
the Cree logo, G•SiC and XThin are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21, XT-21 and XT-24 are trademarks  
of Cree, Inc.  
USA Tel: +1.919.313.5300  
www.cree.com  
4
CPR3CE Rev. E  
Standard Bins for XT290 (continued)  
XT-ꢀ2  
C470XT290-Sꢀ200-x  
C470XT290-0113-x  
C470XT290-0109-x  
C470XT290-0105-x  
C470XT290-0101-x  
C470XT290-0114-x  
C470XT290-0115-x  
C470XT290-0111-x  
C470XT290-0107-x  
C470XT290-0103-x  
C470XT290-0116-x  
C470XT290-0112-x  
C470XT290-0108-x  
C470XT290-0104-x  
21.0 mW  
18.0 mW  
16.0 mW  
12.0 mW  
C470XT290-0110-x  
C470XT290-0106-x  
C470XT290-0102-x  
465 nm  
467.5 nm  
470 nm  
472.5 nm  
475 nm  
Dominant Wavelength  
C527XT290-S0ꢀ00-x  
XT-ꢀ2  
C527XT290-0110-x  
C527XT290-0107-x  
C527XT290-0104-x  
C527XT290-0101-x  
C527XT290-0111-x  
C527XT290-0112-x  
C527XT290-0109-x  
C527XT290-0106-x  
C527XT290-0103-x  
10.0 mW  
9.0 mW  
8.0 mW  
7.0 mW  
C527XT290-0108-x  
C527XT290-0105-x  
C527XT290-0102-x  
520 nm  
525 nm  
530 nm  
535 nm  
Dominant Wavelength  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
Copyright © 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,  
the Cree logo, G•SiC and XThin are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21, XT-21 and XT-24 are trademarks  
of Cree, Inc.  
USA Tel: +1.919.313.5300  
www.cree.com  
5
CPR3CE Rev. E  
Characteristic Curves  
These are representative measurements for the XThin product. Actual curves will vary slightly for the various radiant  
flux and dominant wavelength bins.  
Wavelength Shift vs Forward Current  
Forward Current vs. Forward Voltage  
16.0  
14.0  
12.0  
10.0  
8.0  
30  
25  
20  
15  
10  
5
6.0  
4.0  
2.0  
0.0  
527nm  
470 nm  
-2.0  
-4.0  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
0
5
10  
15  
20  
25  
30  
Vf (V)  
If(mA)  
Relative Intensity vs Forward Current  
Relative Intensity vs Peak Wavelength  
100  
80  
140  
120  
100  
80  
60  
40  
60  
40  
20  
20  
0
0
5
10  
15  
20  
25  
30  
500  
400  
600  
Wavelength (nm)  
If(mA)  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
Copyright © 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,  
the Cree logo, G•SiC and XThin are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21, XT-21 and XT-24 are trademarks  
of Cree, Inc.  
USA Tel: +1.919.313.5300  
www.cree.com  
6
CPR3CE Rev. E  

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