C4D02120E_15 [CREE]

Silicon Carbide Schottky Diode;


型号：	C4D02120E_15
厂家：	CREE, INC
描述：	Silicon Carbide Schottky Diode
文件：	总6页 (文件大小：886K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

C4D02120E

V_RRMꢀꢀꢀꢀꢀꢀ=ꢀꢀꢀꢀ1200ꢀVꢀ

I_F(T_C=135˚C)ꢀ=ꢀ4.5ꢀA

Q_cꢀ ꢀꢀ ꢀꢀꢀ=ꢀꢀ 11ꢀnC

Silicon Carbide Schottky Diode

Z-Rec^®RectifieR

Features

Package

•ꢀ 1.2kVꢀSchottkyꢀRectiﬁer

•ꢀ OptimizedꢀforꢀPFCꢀBoostꢀDiodeꢀApplication

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

TO-252-2

Beneﬁts

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

CASE

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

Applications

Part Number

Package

Marking

•ꢀ SolarꢀInvertersꢀ

ꢀ

•ꢀ PowerꢀFactorꢀCorrection

C4D02120E

TO-252-2

C4D02120

•ꢀ LEDꢀLightingꢀPowerꢀSupplies

•ꢀ X-RayꢀTubeꢀPowerꢀDrivers

•ꢀ EVꢀChargingꢀandꢀPowerꢀConversion

Maximum Ratings (T_C=25°Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol Parameter

Value

1200

1300

1200

Unit

Test Conditions

Note

V_RRM

V_RSM

V_DC

RepetitiveꢀPeakꢀReverseꢀVoltage

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

4.5

T_C=25˚C

T_C=135˚C

T_C=162˚C

I_F

MaximumꢀDCꢀCurrentꢀꢀꢀꢀꢀꢀꢀ

14.4

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

I_FRM

I_FSM

I_F,Max

P_tot

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀCurrent

PowerꢀDissipation

16.5

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

200

160

T_C=25˚C,ꢀt_P=10ꢀms,ꢀPulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀPulse

51.7

22.4

T_C=25˚C

T_C=110˚C

˚C

-55 to

+175

T_J

OperatingꢀJunctionꢀRange

-55 to

+135

T_stg

StorageꢀTemperatureꢀRange

C4D02120E Rev. G

Electrical Characteristics

Symbol Parameter

Typ.

Max.

Unit

Test Conditions

I_Fꢀ=ꢀ2ꢀAꢀꢀT_J=25°C

Note

1.4

1.9

1.8

V_F

ForwardꢀVoltage

ReverseꢀCurrent

I_Fꢀ=ꢀ2ꢀAꢀꢀT_J=175°C

150

V_Rꢀ=ꢀ1200ꢀVꢀꢀT_J=25°C

V_Rꢀ=ꢀ1200ꢀVꢀꢀT_J=175°C

I_R

μA

V_Rꢀ=ꢀ800ꢀV,ꢀI_Fꢀ=ꢀ2A

di/dtꢀ=ꢀ200ꢀA/μs

T_Jꢀ=ꢀ25°C

Q_C

TotalꢀCapacitiveꢀCharge

167

V_Rꢀ=ꢀ0ꢀV,ꢀT_Jꢀ=ꢀ25°C,ꢀfꢀ=ꢀ1ꢀMHz

V_Rꢀ=ꢀ400ꢀV,ꢀT_Jꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz

V_Rꢀ=ꢀ800ꢀV,ꢀT_Jꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz

TotalꢀCapacitance

E_C

CapacitanceꢀStoredꢀEnergy

3.2

μJ

V_Rꢀ=ꢀ800ꢀV

Fig.ꢀ7

Note:

1. Thisꢀisꢀaꢀmajorityꢀcarrierꢀdiode,ꢀsoꢀthereꢀisꢀnoꢀreverseꢀrecoveryꢀcharge.

Thermal Characteristics

Symbol Parameter

Typ.

2.9

Unit

R_θJC

TO-252ꢀPackageꢀThermalꢀResistanceꢀfromꢀJunctionꢀtoꢀCase

°C/W

Typical Performance

600

500

400

300

200

100

T_J=-55°C

3.5

T_J=ꢀ25°C

T_J=ꢀ75°C

T_Jꢀ=125°C

T_Jꢀ=175°C

2.5

T_J=-55°C

T_J=ꢀ25°C

T_J=ꢀ75°C

T_Jꢀ=125°C

T_Jꢀ=175°C

1.5

0.5

1.5

2.5

3.5

500

1000

1500

2000

V_R(V)

V_F(V)

Figureꢀ1.ꢀForwardꢀCharacteristics

Figureꢀ2.ꢀReverseꢀCharacteristics

C4D02120E Rev. G

Typical Performance

10%ꢀDuty

ꢀꢀ20%ꢀDuty

ꢀꢀ30%ꢀDuty

ꢀꢀ50%ꢀDuty

ꢀꢀ70%ꢀDuty

ꢀꢀDC

100

125

150

175

100

125

150

175

T_C˚C

Figureꢀ3.ꢀCurrentꢀDerating

Figureꢀ4.ꢀPowerꢀDerating

180

160

140

120

100

0.1

100

1000

200

400

600

800

1000

V_R(V)

ꢀꢀꢀꢀꢀꢀFigureꢀ5.ꢀRecoveryꢀChargeꢀvs.ꢀReverseꢀVoltageꢀ

ꢀ

ꢀꢀFigureꢀ6.ꢀCapacitanceꢀvs.ꢀReverseꢀVoltage

C4D02120E Rev. G

Typical Performance

6.0

1000

_5.5₀

_4.4₀

_3.3₀

_2.2₀

100

T_J=ꢀ25°C

T_Jꢀ=ꢀ110°C

1.0

_0.0₀

ꢀꢀꢀ0ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ200ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ400ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ600ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ800ꢀꢀꢀꢀꢀꢀꢀꢀꢀ1000

1.E-05

ꢀꢀꢀ1E-05ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-04ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-03ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-02

1.E-04

1.E-03

1.E-02

200

400

600

800

1000

V_RReverse Voltage (V)

V_R(V)

tp(s)

t_p(s)

Figureꢀ8.ꢀNon-repetitiveꢀpeakꢀforwardꢀsurgeꢀcurrentꢀ

versusꢀpulseꢀdurationꢀ(sinusoidalꢀwaveform)

Figureꢀ7.ꢀTypicalꢀCapacitanceꢀStoredꢀEnergy

0.5

0.3

0.1

0.05

100E-3

0.02

SinglePulse

0.01

10E-3

1E-3

1E-6

10E-6

100E-6

1E-3

10E-3

100E-3

T (Sec)

Figureꢀ9.ꢀTransientꢀThermalꢀImpedance

C4D02120E Rev. G

Package Dimensions

PackageꢀTO-252-2

Recommended Solder Pad Layout

Part Number

Package

Marking

C4D02120E

TO-252-2

C4D02120

TO-252-2

Note:ꢀRecommendedꢀsolderingꢀproﬁlesꢀcanꢀbeꢀfoundꢀinꢀtheꢀapplicationsꢀnoteꢀhere:

http://www.cree.com/power_app_notes/soldering

C4D02120E Rev. G

Diode Model

V_fT= V_T+If*R_T

_T=ꢀ0.9592+(T_J*ꢀ-1.20*10^-3)

_T=ꢀ0.1673+(T_J*ꢀ2.10*10^-3)

Note: T_J= Diode Junction Temperature in Degrees Celsius,

valid from 25°C to 175°C

V_T

R_T

Notes

•ꢀ RoHSꢀCompliance

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred

to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance

with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can

be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.

•ꢀ REAChꢀCompliance

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-

cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable

future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.

REACh banned substance information (REACh Article 67) is also available upon request.

•ꢀ This product has not been designed or tested for use in, and is not intended for use in, applications implanted into

the human body nor in applications in which failure of the product could lead to death, personal injury or property

damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,

cardiacꢀdeﬁbrillatorsꢀorꢀsimilarꢀemergencyꢀmedicalꢀequipment,ꢀaircraftꢀnavigationꢀorꢀcommunicationꢀorꢀcontrolꢀ

systems,ꢀorꢀairꢀtrafﬁcꢀcontrolꢀsystems.

RelatedꢀLinks

•ꢀ Cree SiC Schottky diode portfolio: http://www.cree.com/diodes

•ꢀ C3D Spice models: http://response.cree.com/Request_Diode_model

•ꢀ SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

The information in this document is subject to change without notice.

Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

Fax: +1.919.313.5451

www.cree.com/power

C4D02120E Rev. G

C4D02120E_15 [CREE]

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