C4D20120H [CREE]
Silicon Carbide Schottky Diode Z-Rec Rectifier;
| 型号： | C4D20120H |
| 厂家： | 
CREE, INC |
| 描述： | Silicon Carbide Schottky Diode Z-Rec Rectifier |
| 文件： | 总6页 (文件大小：679K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
C4D20120H
VRRM
=
1200 V
Silicon Carbide Schottky Diode
IF (TC=135˚C) =
ꢀ ꢁ26 A
®
Z-Rec Rectifier
Qc
= ꢂ ꢃ 99 nC
Features
Package
•ꢀ 1.2kVꢀSchottkyꢀRectifier
•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent
•ꢀ High-FrequencyꢀOperation
•ꢀ Temperature-IndependentꢀSwitching
•ꢀ ExtremelyꢀFastꢀSwitching
•ꢀ PositiveꢀTemperatureꢀCoefficientꢀonꢀVF
•ꢀ IncreasedꢀCreepage/ClearanceꢀDistance
ꢀꢀꢀꢀꢀꢀTO-247-2
Benefits
PINꢀ1
PINꢀ2
•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectifiers
•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses
•ꢀ HigherꢀEfficiency
CASE
•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements
•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway
Applications
Part Number
Package
Marking
•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ(SMPS)ꢀ
•ꢀ BoostꢀdiodesꢀinꢀPFCꢀorꢀDC/DCꢀstages
•ꢀ FreeꢀWheelingꢀDiodesꢀinꢀInverterꢀstages
•ꢀ AC/DCꢀconverters
ꢀ
C4D20120H
TO-247-2
C4D20120
Maximum Ratings (TC=25°Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VR
RepetitiveꢀPeakꢀReverseꢀVoltage
SurgeꢀPeakꢀReverseꢀVoltage
DCꢀPeakꢀReverseꢀVoltage
1200
1300
1200
V
V
V
54
26
20
TC=25˚C
TC=135˚C
TC=156˚C
IF
ContinuousꢀForwardꢀCurrentꢀꢀꢀꢀꢀꢀꢀ
A
Fig.ꢀ3
86
56
TC=25˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀPulse
TC=110˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀPulse
IFRM
IFSM
RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent
Non-RepetitiveꢀForwardꢀSurgeꢀCurrent
Non-RepetitiveꢀPeakꢀForwardꢀCurrent
PowerꢀDissipation
A
A
130
104
TC=25˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀPulse
TC=110˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀPulse
Fig.ꢀ8
Fig.ꢀ8
Fig.ꢀ4
1150
950
TC=25˚C,ꢀtP=10ꢀms,ꢀPulse
TC=110˚C,ꢀtP=10ꢀms,ꢀPulse
IF,Max
A
246
106.5
TC=25˚C
TC=110˚C
Ptot
W
dV/dt
∫i2dt
TJꢀ,ꢀTstg
DiodeꢀdV/dtꢀruggedness
200
V/ns
A2s
VR=0-960V
84.5
54
TC=25˚C,ꢀtP=10ꢀms
TC=110˚C,ꢀtP=10ꢀms
i2tꢀvalue
-55ꢀtoꢀ
+175
OperatingꢀJunctionꢀandꢀStorageꢀTemperature
TO-247ꢀMountingꢀTorque
˚C
1
Nm
M3ꢀScrew
8.8
lbf-in 6-32ꢀScrew
1
C4D20120H Rev. -, 02-2018
Electrical Characteristics
Symbol Parameter
Typ.
Max.
Unit
V
Test Conditions
IFꢀ=ꢀ20ꢀAꢀꢀTJ=25°C
Note
Fig.ꢀ1
Fig.ꢀ2
1.5
2.2
1.8
3
VF
ForwardꢀVoltage
ReverseꢀCurrent
IFꢀ=ꢀ20ꢀAꢀꢀTJ=175°C
35
65
200
400
VRꢀ=ꢀ1200ꢀVꢀꢀTJ=25°C
VRꢀ=ꢀ1200ꢀVꢀꢀTJ=175°C
IR
μA
VRꢀ=ꢀ800ꢀV,ꢀIFꢀ=ꢀ20A
di/dtꢀ=ꢀ200ꢀA/μs
TJꢀ=ꢀ25°C
QC
TotalꢀCapacitiveꢀCharge
99
nC
Fig.ꢀ5
1500
93
67
VRꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ25°C,ꢀfꢀ=ꢀ1ꢀMHz
VRꢀ=ꢀ400ꢀV,ꢀTJꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz
VRꢀ=ꢀ800ꢀV,ꢀTJꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz
C
TotalꢀCapacitance
pF
Fig.ꢀ6
Fig.ꢀ7
EC
CapacitanceꢀStoredꢀEnergy
28
μJ
VRꢀ=ꢀ800ꢀV
Note:ꢀThisꢀisꢀaꢀmajorityꢀcarrierꢀdiode,ꢀsoꢀthereꢀisꢀnoꢀreverseꢀrecoveryꢀcharge.
Thermal Characteristics
Symbol
Parameter
Typ.
Unit
Note
RθJC
ThermalꢀResistanceꢀfromꢀJunctionꢀtoꢀCase
0.61
°C/W
Fig.ꢀ9
Typical Performance
40
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
T =-55°C
ꢀꢀ
TJ=ꢀ25°C
35
ꢀꢀ
J
ꢀꢀ
ꢀꢀ
ꢀꢀ
TJ=ꢀ75°C
TJꢀ=125°C
ꢀꢀ
TJꢀ=175°C
30
25
20
15
10
5
T =-55°C
ꢀꢀ
TJ=ꢀ25°C
ꢀꢀ
J
ꢀꢀ
ꢀꢀ
ꢀꢀ
TJ=ꢀ75°C
TJꢀ=125°C
ꢀꢀ
ꢀ
TJꢀ=175°C
0
0
0
0
1
2
3
4
500
1000
1500
VF (V)
VR (V)
Figureꢀ1.ꢀForwardꢀCharacteristics
Figureꢀ2.ꢀReverseꢀCharacteristics
2
C4D20120H Rev. -, 02-2018
Typical Performance
280
240
200
160
120
80
180
160
140
120
100
80
10%ꢀDuty
ꢀꢀ
ꢀꢀ20%ꢀDuty
ꢀꢀ30%ꢀDuty
ꢀꢀ50%ꢀDuty
ꢀꢀ70%ꢀDuty
ꢀꢀDC
60
40
40
20
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC ˚C
TC ˚C
Figureꢀ4.ꢀPowerꢀDerating
Figureꢀ3.ꢀCurrentꢀDerating
140
120
100
80
1600
1400
1200
1000
800
600
400
200
0
60
40
20
0
0
200
400
600
800
1000
1200
0.1
1
10
100
1000
VR (V)
VR (V)
ꢀꢀꢀꢀꢀꢀFigureꢀ5.ꢀRecoveryꢀChargeꢀvs.ꢀReverseꢀVoltageꢀ
ꢀ
ꢀ
Figureꢀ6.ꢀCapacitanceꢀvs.ꢀReverseꢀVoltage
3
C4D20120H Rev. -, 02-2018
Typical Performance
50
10000
45
40
35
1000
30
25
20
T
J_initialꢀ=ꢀ25°C
ꢀꢀ
100
ꢀꢀ
TJ_initialꢀ=ꢀ110°C
15
10
5
10
0
ꢀꢀꢀ0ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ200ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ400ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ600ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ800ꢀꢀꢀꢀꢀꢀꢀꢀꢀ1000
ꢀꢀꢀ1E-05ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-04ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-03ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-02
tp (s)
VR (V)
Figureꢀ8.ꢀNon-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrentꢀꢀ
versusꢀPulseꢀDurationꢀ(sinusoidalꢀwaveform)
Figureꢀ7.ꢀTypicalꢀCapacitanceꢀStoredꢀEnergy
1
0.5
0.3
100E-3
0.1
0.05
10E-3
1E-3
0.02
0.01
SinglePulse
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
T (Sec)
Figureꢀ9.ꢀTransientꢀThermalꢀImpedance
4
C4D20120H Rev. -, 02-2018
Package Dimensions
Inches
Millimeters
Min
POS
Package TO-247-2
Min
.190
.087
.059
.039
.065
.015
.819
.515
.020
.620
.530
.135
Max
.205
.102
.098
.055
.094
.035
.845
-
Max
5.31
2.59
2.49
1.40
2.39
0.89
21.46
-
A
A1
A2
b
4.70
2.21
1.50
0.99
b2
c
1.65
0.38
D
20.80
13.08
0.51
D1
D2
E
.053
.640
-
1.35
16.26
-
15.49
13.46
3.43
E1
E2
e
.157
3.99
.214
.010
5.44
0.25
ØK
L
.780
-
.800
.177
.144
.291
.244
19.81
-
20.32
4.50
3.66
7.39
6.20
L1
ØP
ØP1
Q
.140
.278
.212
3.56
7.06
5.38
S
.243
6.17
W
-
.006
-
0.15
PIN 1
PIN 2
CASE
Recommended Solder Pad Layout
Part Number
Package
Marking
all units are in inches
.4
C4D20120H
TO-247-2
C4D20120
TO-247-2
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C4D20120H Rev. -, 02-2018
Diode Model
ꢀꢀꢀꢀꢀꢀꢀꢀꢀVfTꢀ=ꢀVT+If*RT
Tꢀ=ꢀ0.97+(TJ*ꢀ-1.40*10-3)
Tꢀ=ꢀ0.023+(TJ*ꢀ2.71*10-4)
V
R
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Notes
•ꢀ RoHSꢀCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/power/tools-and-support/product-ecology.
•ꢀ REAChꢀCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•ꢀ This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacꢀdefibrillatorsꢀorꢀsimilarꢀemergencyꢀmedicalꢀequipment,ꢀaircraftꢀnavigationꢀorꢀcommunicationꢀorꢀcontrolꢀ
systems,ꢀorꢀairꢀtrafficꢀcontrolꢀsystems.
RelatedꢀLinks
•ꢀ Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
•ꢀ Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
•ꢀ SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Copyright © 2018 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Fax: +1.919.313.5451
www.cree.com/power
6
C4D20120H Rev. -, 02-2018
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