C527RT320-0306 [CREE]
Reduced Forward Voltage 3.1 V Typical at 20 mA; 降低正向电压3.1 V(典型)在20mA型号: | C527RT320-0306 |
厂家: | CREE, INC |
描述: | Reduced Forward Voltage 3.1 V Typical at 20 mA |
文件: | 总6页 (文件大小:375K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
®
RazerThin Gen III LEDs
CxxxRT320-Sxxxx
Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green
LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward
voltage. Cree’s RazerThin series chips have the ability to withstand 1000 V ESD.
FEATURES
APPLICATIONS
•
•
Thin 95 μm Chip
Reduced Forward Voltage
3.1 V Typical at 20 mA
RazerThin LED Performance
•
LCD Backlighting Units
–
–
–
Mobile Appliances
Digital Still Cameras
Monitors
–
•
–
–
–
460 nm - 14 mW min.
470 nm - 12 mW min.
527 nm - 6 mW min.
•
•
•
•
•
Cellular Phone LCD Backlighting
Digital Camera Flash For Mobile Appliances
Automotive Dashboard Lighting
LED Video Displays
•
•
Single Wire Bond Structure
Class 2 ESD Rating
Audio Product Display Lighting
CxxxRT320-Sxxxx Chip Diagram
Top View
Die Cross Section
Bottom View
G•SiC LED Chip
320 x 320 μm
290 x 290 μm
Anode (+)
t = 95 μm
Backside
Metallization
Gold Bond Pad
112 μm Diameter
Cathode (-)
110 μm square
Subject to change without notice.
www.cree.com
ꢀ
Maximum Ratings at TA = 25°CNotes ꢀ&3
DC Forward Current
CxxxRT320-Sxxxx
50 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
100 mA
125°C
Reverse Voltage
5 V
Operating Temperature Range
Storage Temperature Range
-40°C to +100°C
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max.
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
3.1
Max.
Max.
Typ.
24
C460RT320-Sxxxx
C470RT320-Sxxxx
C527RT320-Sxxxx
2.7
2.7
2.7
3.7
3.7
3.7
1
1
1
3.1
25
3.2
40
Mechanical Specifications
Description
CxxxRT320-Sxxxx
Dimension
Tolerance
± 35
P-N Junction Area (μm)
Top Area (μm)
270 x 270
320 x 320
290 x 290
95
± 35
Bottom Area (μm)
± 35
Chip Thickness (μm)
± 15
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Width (μm)
112
± 20
1.0
± 0.5
± 10
110
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)
for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.
The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the
package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized
in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding
the ability of Products to withstand ESD.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances
products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol
OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.
4. Specifications are subject to change without notice.
Cree, Inc.
4600 Silicon Drive
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3DU Rev. -
Standard Bins for CxxxRT320-Sxx000
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxRT320-Sxx000) orders may be filled with any or all bins (CxxxRT320-xxxx) contained
in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 20 mA.
C460RT320-Sꢀ700
C460RT320-0313
C460RT320-0309
C460RT320-0314
C460RT320-0310
C460RT320-0315
C460RT320-0311
C460RT320-0316
C460RT320-0312
20.0 mW
17.0 mW
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Dominant Wavelength
C460RT320-Sꢀ400
C460RT320-0313
C460RT320-0309
C460RT320-0305
C460RT320-0314
C460RT320-0315
C460RT320-0311
C460RT320-0307
C460RT320-0316
C460RT320-0312
C460RT320-0308
20.0 mW
17.0 mW
14.0 mW
C460RT320-0310
C460RT320-0306
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3DU Rev. -
Standard Bins for CxxxRT320-Sxx000 (continued)
C470RT320-Sꢀ700
C470RT320-0313
C470RT320-0309
C470RT320-0314
C470RT320-0310
C470RT320-0315
C470RT320-0311
C470RT320-0316
C470RT320-0312
20.0 mW
17.0 mW
465 nm
467.5 nm
470 nm
472.5 nm
475 nm
Dominant Wavelength
C470RT320-Sꢀ400
C470RT320-0313
C470RT320-0309
C470RT320-0305
C470RT320-0314
C470RT320-0315
C470RT320-0311
C470RT320-0307
C470RT320-0316
C470RT320-0312
C470RT320-0308
20.0 mW
17.0 mW
14.0 mW
C470RT320-0310
C470RT320-0306
465 nm
467.5 nm
470 nm
472.5 nm
475 nm
Dominant Wavelength
C470RT320-Sꢀ200
C470RT320-0313
C470RT320-0309
C470RT320-0305
C470RT320-0301
C470RT320-0314
C470RT320-0315
C470RT320-0311
C470RT320-0307
C470RT320-0303
C470RT320-0316
C470RT320-0312
C470RT320-0308
C470RT320-0304
20.0 mW
17.0 mW
14.0 mW
12.0 mW
C470RT320-0310
C470RT320-0306
C470RT320-0302
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3DU Rev. -
Standard Bins for CxxxRT320-Sxx000 (continued)
C527RT320-S07500
C527RT320-0307
C527RT320-0304
C527RT320-0308
C527RT320-0305
C527RT320-0309
C527RT320-0306
10.0 mW
7.5 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
C527RT320-S0500
C527RT320-0307
C527RT320-0304
C527RT320-0301
C527RT320-0308
C527RT320-0309
C527RT320-0306
C527RT320-0303
10.0 mW
7.5 mW
5.0 mW
C527RT320-0305
C527RT320-0302
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
5
CPR3DU Rev. -
Characteristic Curves
These are representative measurements for the RazerThin products. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Wavelength Shift vs. Forward Current
Forward Current vs. Forward Voltage
15
10
5
30
25
20
15
10
5
0
-5
-10
-15
0
0
5
10
15
20
25
30
35
40
45
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
If (mA)
Vf (V)
Relative Intensity vs. Forward Current
250%
200%
150%
100%
50%
0%
0
5
10
15
20
25
30
35
40
45
50
If (mA)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
6
CPR3DU Rev. -
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