CG2H40045P_技术文档

CG2H40045

45 W, DC - 4 GHz RF Power GaN HEMT

Cree’s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility

transistor (HEMT). The CG2H40045, operating from a 28 volt rail, offers a general

purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efﬁciency, high gain and wide bandwidth capabilities

making the CG2H40045 ideal for linear and compressed ampliﬁer circuits. The

transistor is available in a ﬂange and pill package.

FEATURES

APPLICATIONS

•

Up to 4 GHz Operation

•

2-Way Private Radio

18 dB Small Signal Gain at 2.0 GHz

14 dB Small Signal Gain at 4.0 GHz

55 W Typical P_SAT

Broadband Ampliﬁers

Cellular Infrastructure

Test Instrumentation

60 % Efﬁciency at P_SAT

Class A, AB, Linear ampliﬁers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

28 V Operation

Subject to change without notice.

www.cree.com/rf

1

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter

Symbol

V_DSS

Rating

120

Units

Volts

˚C

Conditions

25˚C

Drain-Source Voltage

Gate-to-Source Voltage

Storage Temperature

V_GS

-10, +2

-65, +150

225

25˚C

T_STG

Operating Junction Temperature

Maximum Forward Gate Current

Maximum Drain Current¹

Soldering Temperature²

Screw Torque

T

˚C

J

I_GMAX

I_DMAX

T_S

15

mA

A

25˚C

6

245

˚C

80

in-oz

˚C/W

˚C

τ

Thermal Resistance, Junction to Case³

Case Operating Temperature^3,4

R_θJC

2.8

85˚C

T_C

-40, +150

Note:

¹Current limit for long term, reliable operation

²Refer to the Application Note on soldering at www.cree.com/RF/Document-Library

³Measured for the CG2H40045F at P_DISS= 56W.

⁴See also, the Power Dissipation De-rating Curve on Page 8.

Electrical Characteristics (T_C= 25˚C)

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics¹

Gate Threshold Voltage

V_GS(th)

V_GS(Q)

I_DS

-3.8

–

-3.0

-2.7

14.0

–

-2.3

–

V_DC

A

V_DS= 10 V, I_D= 14.4 mA

V_DS= 28 V, I_D= 400 mA

V_DS= 6.0 V, V_GS= 2.0 V

V_GS= -8 V, I_D= 14.4 mA

Gate Quiescent Voltage

Saturated Drain Current²

Drain-Source Breakdown Voltage

11.6

120

–

V_BR

–

V_DC

RF Characteristics³(T_C= 25˚C, F₀= 2.5 GHz unless otherwise noted)

Small Signal Gain

Power Output⁴

G_SS

P_SAT

η

15

47

52

17

55

62

–

dB

W

%

V_DD= 28 V, I_DQ= 400 mA

Drain Efﬁciency⁵

V_DD= 28 V, I_DQ= 400 mA, P_OUT= P_SAT

No damage at all phase angles,

V_DD= 28 V, I_DQ= 400 mA,

P_OUT= 45 W CW

Y

Output Mismatch Stress

VSWR

–

10 : 1

Dynamic Characteristics

Input Capacitance

C_GS

C_DS

C_GD

–

16.6

6.3

–

pF

V_DS= 28 V, V_gs= -8 V, f = 1 MHz

Output Capacitance

Feedback Capacitance

0.6

Notes:

¹Measured on wafer prior to packaging.

²Scaled from PCM data.

³Measured in CG2H40045F-AMP

⁴P_SATis deﬁned as I_G= 1.08 mA.

⁵Drain Efﬁciency = P_OUT/ P_DC

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

2

CG2H40045 Rev 1.0

Typical Performance

Figure 1. - Small Signal Gain and Input Return Loss of

the CG2H40045F-AMP vs Frequency

V_DD= 28 V, I_DQ= 400 mA

Figure 2. - Gain, Efﬁciency, and Output Power vs Frequency measured

in Ampliﬁer Circuit CG2H40045F-AMP

V_DD= 28 V, I_DQ= 400 mA

Eﬃciency

P_SAT

Gain

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

3

CG2H40045 Rev 1.0

Typical Performance

Figure 3. - Gain and Efﬁciency vs Output Power

measured in Ampliﬁer Circuit CG2H40045F-AMP

V_DD= 28 V, I_DQ= 400 mA, Freq = 2.5 GHz

Figure 4. - Single Tone CW Output Power vs Input Power of

measured in Ampliﬁer Circuit CG2H40045F-AMP

V_DD= 28 V, I_DQ= 400 mA

50

45

40

35

30

25

2.4GHz

2.5GHz

2.6GHz

20

5

10

15

20

25

30

35

40

Input Power (dBm)

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

4

CG2H40045 Rev 1.0

Typical Performance

Figure 5. - Maximum Available Gain and K Factor of the CG2H40045

V_DD= 28 V, I_DQ= 400 mA

30

25

20

15

1.6

1.2

0.8

0.4

0

Gmax

K Factor

10

0.5

1.5

2.5

3.5

4.5

5.5

Frequency (GHz)

Figure 6. - Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CG2H40045

V_DD= 28 V, I_DQ= 400 mA

2

1.5

1

40

30

20

10

0

Min Noise Figure

Noise Resistance

0.5

0

0.5

1.5

2.5

3.5

4.5

5.5

Frequency (GHz)

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

5

CG2H40045 Rev 1.0

Electrostatic Discharge (ESD) Classiﬁcations

Parameter

Symbol

HBM

Class

Test Methodology

JEDEC JESD22 A114-D

JEDEC JESD22 C101-C

Human Body Model

Charge Device Model

1A > 250 V

1 < 200 V

CDM

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

6

CG2H40045 Rev 1.0

Simulated Source and Load Impedances

D

Z Source

Z Load

G

S

Frequency (MHz)

500

Z Source

Z Load

14.73 + j6.91

12.3 + j 7.6

9.2 + j1.3

9.2 + j6.2

6.0 + j4.3

6.5 + j2.3

7.8 + j1.7

6.5 + j0.6

5.4 + j0.2

4.6 - j2.0

4.1 + j5.27

2.9 + j 4.1

2.7 + j0.8

1.9 + j 3.1

2.1 - j 2.5

2.2- j2.0

750

1000

1100

1500

1700

1800

2.4 - j1.4

2.8 - j1.8

2.5 - j2.7

1.4 - j7.3

2.4 - j11

1900

2000

2100

3000

4000

4.4 - j3.5

Note 1. V_DD= 28V, I_DQ= 800mA in the 440193 package.

Note 2. Optimized for power gain, P_SATand PAE.

Note 3. When using this device at low frequency, series resistors should be used to

maintain ampliﬁer stability.

CG2H40045 Power Dissipation De-rating Curve

60

50

40

30

20

10

0

Note 1

0

25

50

75

100

125

150

175

200

225

250

Maximum Case Temperature (°C)

Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

7

CG2H40045 Rev 1.0

CG2H40045-AMP Demonstration Ampliﬁer Circuit Schematic

CG2H40045-AMP Demonstration Ampliﬁer Circuit Outline

Note: The device slot is machined to different depths to support either pill or ﬂanged versions

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

8

CG2H40045 Rev 1.0

CG2H40045-AMP Demonstration Ampliﬁer Circuit Bill of Materials

Designator

Description

Qty

C1

CAP, 0.8pF, ± 0.1 pF, 0603

1

3

1

2

5

2

1

2

1

C2

CAP, 2.2pF, ± 0.1 pF, 0603

C4,C11,C17

CAP, 10.0pF, +/-5%, 0603, ATC

CAP, 470pF ±5 %, 100 V, 0603, X7R

CAP,33000PF, 0805,100V, X7R

CAP, 10UF, 16V, SMT, TANTALUM

CAP, 8.2pF ±5%, ATC100B

C6,C13, C19

C7,C14,C20

C8

C10

C15,C21

CAP, 1.0UF ±10%, 100V, 1210, X7R

CAP, 82.0pF, ±5%, 0603

C5,C12,C18,C30,C31

C16,C22

CAP, 33UF, 20%, G CASE

R2

R1

RES, 1/16W, 0603, 100 Ohms 1%

RES, 1/16W, 0603, 5.1 Ohms 1%

CONN, SMA, PANEL MOUNT JACK, FLANGE

CONN, HEADER, RT>PLZ .1CEN LK 9POS

PCB, RO4350B, Er = 3.48, h = 20 mil

CG2H40045

J2,J3

J1

-

Q1

CG2H40045-AMP Demonstration Ampliﬁer Circuit

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

9

CG2H40045 Rev 1.0

Typical Package S-Parameters for CG2H40045

(Small Signal, V_DS= 28 V, I_DQ= 400 mA, angle in degrees)

Frequency

Mag S11

Ang S11

Mag S21

Ang S21

Mag S12

Ang S12

Mag S22

Ang S22

0.500

0.600

0.700

0.800

0.900

1.000

1.100

1.200

1.300

1.400

1.500

1.600

1.700

1.800

1.900

2.000

2.100

2.200

2.300

2.400

2.500

2.600

2.700

2.800

2.900

3.000

3.200

3.400

3.600

3.800

4.000

4.200

4.400

4.600

4.800

5.000

5.200

5.400

5.600

5.800

6.000

0.924

0.925

0.926

0.927

0.928

0.927

0.926

0.925

0.923

0.921

0.918

0.914

0.910

0.904

0.897

0.888

0.877

0.864

0.848

0.828

0.804

0.775

-171.10

-173.39

-175.16

-176.61

-177.85

-178.94

-179.93

179.15

178.29

177.47

176.68

175.91

175.15

174.41

173.66

172.92

172.18

171.43

170.67

169.90

169.12

168.32

167.51

166.67

165.82

164.94

163.09

161.12

158.99

156.67

154.13

151.31

148.17

144.63

140.59

135.92

130.47

124.02

116.27

106.83

95.17

9.020

7.526

6.456

5.653

5.027

4.527

4.118

3.779

3.492

3.247

3.035

2.851

2.690

2.548

2.423

2.311

2.211

2.121

2.041

1.969

1.905

1.847

1.795

1.748

1.707

1.670

1.609

1.564

1.533

1.515

1.510

1.519

1.541

1.577

1.630

1.701

1.791

1.905

2.045

2.212

2.407

83.83

80.67

77.77

75.04

72.44

69.92

67.47

65.08

62.74

60.45

58.19

55.97

53.78

51.62

49.49

47.38

45.30

43.24

41.20

39.17

37.17

35.17

33.19

31.22

29.25

27.29

23.37

19.43

15.44

11.38

7.20

0.012

0.011

0.012

0.013

0.014

0.016

0.017

0.019

0.021

0.023

-0.74

-2.80

0.733

0.736

0.738

0.740

0.743

0.745

0.748

0.750

0.753

0.756

0.758

0.761

0.764

0.767

0.769

0.772

0.774

0.777

0.779

0.781

0.783

0.785

0.787

0.788

0.790

0.791

0.793

0.794

0.793

0.791

0.787

0.783

0.777

0.769

0.759

0.747

0.732

0.715

0.693

0.668

-175.20

-176.01

-176.61

-177.08

-177.48

-177.83

-178.15

-178.46

-178.76

-179.06

-179.37

-179.69

179.98

179.64

179.28

178.91

178.53

178.12

177.70

177.27

176.81

176.34

175.85

175.34

174.82

174.27

173.13

171.90

170.59

169.19

167.68

166.06

164.31

162.41

160.34

158.07

155.55

152.73

149.54

145.87

141.58

-4.58

-6.20

-7.68

-9.06

-10.36

-11.59

-12.76

-13.87

-14.93

-15.93

-16.89

-17.79

-18.65

-19.46

-20.23

-20.95

-21.63

-22.27

-22.87

-23.43

-23.95

-24.44

-24.90

-25.32

-26.10

-26.81

-27.47

-28.13

-28.86

-29.69

-30.72

-32.03

-33.71

-35.87

-38.66

-42.23

-46.76

-52.46

-59.58

2.88

-1.65

-6.44

-11.56

-17.09

-23.15

-29.86

-37.39

-45.93

-55.72

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

10

CG2H40045 Rev 1.0

Typical Package S-Parameters for CG2H40045

(Small Signal, V_DS= 28 V, I_DQ= 800 mA, angle in degrees)

Frequency

Mag S11

Ang S11

Mag S21

Ang S21

Mag S12

Ang S12

Mag S22

Ang S22

0.500

0.600

0.700

0.800

0.900

1.000

1.100

1.200

1.300

1.400

1.500

1.600

1.700

1.800

1.900

2.000

2.100

2.200

2.300

2.400

2.500

2.600

2.700

2.800

2.900

3.000

3.200

3.400

3.600

3.800

4.000

4.200

4.400

4.600

4.800

5.000

5.200

5.400

5.600

5.800

6

0.939

0.938

0.937

0.936

0.935

0.934

0.933

0.931

0.928

0.925

0.921

0.917

0.912

0.905

0.897

0.887

0.875

0.860

0.842

0.820

0.794

0.76376

-172.50

-174.64

-176.32

-177.71

-178.91

-179.98

179.05

178.15

177.29

176.47

175.67

174.90

174.13

173.38

172.63

171.87

171.12

170.36

169.59

168.80

168.01

167.20

166.37

165.52

164.65

163.75

161.87

159.85

157.66

155.28

152.67

149.77

146.53

142.86

138.67

133.82

128.15

121.43

113.34

103.490

91.356

8.967

7.489

6.432

5.639

5.024

4.532

4.131

3.798

3.518

3.279

3.073

2.894

2.737

2.600

2.478

2.370

2.274

2.188

2.111

2.043

1.981

1.926

1.877

1.833

1.795

1.761

1.705

1.665

1.640

1.628

1.630

1.645

1.675

1.721

1.784

1.865

1.969

2.096

2.250

2.432

2.6393

84.35

81.47

78.83

76.33

73.94

71.62

69.36

67.15

64.97

62.82

60.70

58.61

56.54

54.49

52.45

50.43

48.42

46.43

44.44

42.47

40.50

38.53

36.57

34.61

32.65

30.69

26.74

22.74

18.67

14.50

10.19

5.71

0.010

0.009

0.010

0.011

0.012

0.013

0.014

0.015

0.017

0.019

0.021

0.023

0.025877

1.41

-0.03

0.762

0.763

0.764

0.765

0.767

0.768

0.769

0.770

0.771

0.773

0.774

0.775

0.777

0.778

0.779

0.780

0.781

0.782

0.783

0.784

0.785

0.786

0.784

0.782

0.779

0.775

0.770

0.763

0.754

0.744

0.731

0.717

0.699

0.678

0.654

0.6254

-177.28

-178.00

-178.57

-179.05

-179.47

-179.85

179.79

179.44

179.10

178.77

178.43

178.09

177.74

177.38

177.01

176.64

176.25

175.85

175.43

175.00

174.56

174.10

173.63

173.14

172.63

172.11

171.00

169.82

168.56

167.20

165.75

164.17

162.48

160.63

158.62

156.41

153.98

151.27

148.22

144.730

140.65

-1.23

-2.28

-3.21

-4.05

-4.82

-5.54

-6.20

-6.81

-7.38

-7.90

-8.39

-8.83

-9.24

-9.61

-9.95

-10.25

-10.53

-10.77

-10.98

-11.17

-11.34

-11.49

-11.62

-11.74

-11.97

-12.20

-12.49

-12.89

-13.46

-14.26

-15.37

-16.87

-18.85

-21.43

-24.72

-28.86

-34.03

-40.418

-48.247

1.00

-4.00

-9.36

-15.16

-21.52

-28.57

-36.47

-45.404

-55.605

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

11

CG2H40045 Rev 1.0

Product Dimensions CG2H40045F (Package Type — 440193)

Product Dimensions CG2H40045P (Package Type — 440206)

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

12

CG2H40045 Rev 1.0

Product Ordering Information

Order Number

Description

Unit of Measure

Image

CG2H40045F

GaN HEMT

Each

CG2H40045P

CG2H40045F-TB

CG2H40045P-TB

CG2H40045F-AMP

CG2H40045P-AMP

GaN HEMT

Each

Test board without GaN HEMT

Test board with GaN HEMT installed

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

13

CG2H40045 Rev 1.0

Disclaimer

Speciﬁcations are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate

and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may

result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,

representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average

values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different

applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts

for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or

death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.cree.com/RF

Sarah Miller

Marketing & Export

Cree, RF Components

1.919.407.5302

Ryan Baker

Marketing

Cree, RF Components

1.919.407.7816

Tom Dekker

Sales Director

Cree, RF Components

1.919.407.5639

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

14

CG2H40045 Rev 1.0


型号：	CG2H40045P
厂家：	CREE, INC
描述：	45 W, DC - 4 GHz RF Power GaN HEMT
文件：	总14页 (文件大小：1735K)
中文：	中文翻译
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CG2H40045P [CREE]

相关型号：

CG2H80015D

CG2H80030D

CG2H80060D

CG3

CG30

CG3020-7

CG3020-7B

CG3020-7D

CG3020-7DB

CG3020-9

CG3020-9B

CG3020-9D