CGH09120F-AMP [CREE]
120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM;
| 型号： | CGH09120F-AMP |
| 厂家： | 
CREE, INC |
| 描述： | 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM GSM LTE CD |
| 文件： | 总13页 (文件大小：1747K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGH09120F
120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM
Cree’s CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEM
designed specifically for high efficiency, high gain and wide bandwidth capabilities, whic
makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. Th
transistor is supplied in a ceramic/metal flange package.
Typical Performance Over 800-950 MHz (TC = 25˚C) of Demonstration Amplifier
Parameter
800 MHz
850 MHz
900 MHz
950 MHz
Units
Gain @ 43 dBm
19.2
21.0
21.6
21.6
dB
ACLR @ 43 dBm
Drain Efficiency @ 43 dBm
Note:
-40.5
31.0
-40.5
33.7
-39.0
36.6
-36.5
39.3
dBc
%
Measured in the CGH09120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping,
PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Features
•
•
•
•
•
UHF - 2.5 GHz Operation
21 dB Gain
-38 dBc ACLR at 20 W PAVE
35 % Efficiency at 20 W PAVE
High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/RF
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
Rating
84
Units
Volts
Volts
Watts
˚C
Conditions
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
VGS
-10, +2
56
25˚C
PDISS
TSTG
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
-65, +150
225
T
˚C
J
IGMAX
IDMAX
TS
30
mA
A
25˚C
25˚C
12
245
˚C
Screw Torque
80
in-oz
τ
RθJC
TC
Thermal Resistance, Junction to Case3
Case Operating Temperature3
1.7
˚C/W
˚C
85˚C
-40, +150
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH09120F at PDISS = 56 W
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
28.0
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 28.8 mA
VDS = 28 V, ID = 1.2 A
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
23.2
120
–
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 28.8 mA
VBR
–
VDC
RF Characteristics5 (TC = 25˚C, F0 = 870 MHz unless otherwise noted)
Saturated Output Power3,4
Pulsed Drain Efficiency3
Modulated Gain6
PSAT
η
–
–
120
75
–
–
W
%
VDD = 28 V, IDQ = 1.2 A,
VDD = 28 V, IDQ = 1.2 A, POUT = PSAT
VDD = 28 V, IDQ = 1.2 A, POUT = 43 dBm
VDD = 28 V, IDQ = 1.2 A, POUT = 43 dBm
VDD = 28 V, IDQ = 1.2 A, POUT = 43 dBm
GSS
ACLR
η
20
–
21.5
-38
35
–
dB
dBc
%
WCDMA Linearity6
–34
–
Modulated Drain Efficiency6
31
No damage at all phase angles,
VDD = 28 V, IDQ = 1.2 A,
POUT = 20 W CW
Output Mismatch Stress
VSWR
–
–
10 : 1
Y
Dynamic Characteristics
Input Capacitance
CGS
CDS
CGD
–
–
–
35.3
9.1
–
–
–
pF
pF
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
Feedback Capacitance
1.6
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Pulse Width = 40 μS, Duty Cycle = 5 %.
4 PSAT is defined as IG = 10 mA peak.
5 Measured in CGH09120F-AMP
6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 67 % Clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGH09120F Rev 2.1
Typical Pulse Performance
Typical Pulsed Output Power, Drain Efficiency, and Gain vs Input Power
measured in CGH09120F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 1.2 A, Freq = 870 MHz, Pulse Width = 40 μS, Duty Cycle = 5 %
80
70
60
50
40
30
20
10
0
25
23
21
19
17
15
13
11
9
Gain
Output
Power
Drain
Efficiency
Output Power
Drain Efficiency
Gain
0
5
10
15
20
25
30
35
40
Input Power (dBm)
Typical Pulsed Saturated Power vs Frequency
measured in CGH09120F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 1.2 A, PSAT = 10 mA IGS Peak, Pulse Width = 40 μS, Duty Cycle = 5 %
54.0
53.6
53.2
52.8
52.4
52.0
51.6
51.2
50.8
50.4
50.0
100
90
80
70
60
50
40
30
20
10
0
Drain
Efficiency
Psat
Drain Efficiency
Psat
700
750
800
850
900
950
1000
Frequency (MHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGH09120F Rev 2.1
Typical Linear Performance
Typical Small Signal Gain and Return Loss vs Frequency
measured in CGH09120F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 1.2 A
25
23
21
19
17
15
10
5
Gain
0
-5
-10
-15
-20
Return
Loss
Gain
Return Loss
13
750
800
850
900
950
1000
Frequency (MHz)
Typical WCDMA Performance
Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Power
measured in CGH09120F-AMP Amplifier Circuit.
3GPP Test Model 1, 64 DPCH 67 % Clipping, 8.81 dB PAR @ 0.01 %
VDS = 28 V, IDS = 1.2 A, Frequency = 870 MHz
-30
-32
-34
-36
-38
-40
-42
-44
-46
-48
-50
50
45
40
35
30
25
20
15
10
5
-ACLR
+ACLR
Drain Efficiency
ACLR
Drain
Efficiency
0
25
30
35
40
45
50
Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGH09120F Rev 2.1
Typical WCDMA Digital Pre-Distortion (DPD) Performance
WCDMA Characteristics with and without DPD Correction
ACLR and Drain Efficiency vs Output Power
measured in CGH09120F-AMP Amplifier Circuit.
Two Channel WCDMA 7.5dB PAR with CFR
VDS = 28 V, IDS = 1.2 A, Frequency = 870 MHz
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
50
45
40
35
30
25
20
15
10
5
Uncorrected -ACLR
Corrected -ACLR
Uncorrected +ACLR
Corrected +ACLR
Corrected Drain Eff
Uncorrected Drain Eff
Uncorrected
ACLR
Drain
Efficiency
Corrected
ACLR
0
24
29
34
39
44
Output Power (dBm)
WCDMA Linearity with DPD Linearizer
measured in CGH09120F-AMP Amplifier Circuit.
Two Channel WCDMA 7.5dB PAR with CFR
VDS = 28 V, IDS = 1.2 A, POUT = 43 dBm, Efficiency = 35 %
-10
-20
-30
-40
-50
-60
-70
-80
-90
Uncorrected
DPD Corrected
840
850
860
870
880
890
900
Frequency (MHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGH09120F Rev 2.1
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH09120F
VDD = 28 V, IDQ = 1.2 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH09120F
VDD = 28 V, IDQ = 1.2 A
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
CDM
II (200 < 500 V)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGH09120F Rev 2.1
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
700
750
800
850
900
950
1000
0.75 - j 0.58
0.84 - j 0.18
0.90 + j 0.19
0.95 + j 0.59
1.02 + j 1.03
1.17 + j 1.53
1.53 + j 2.10
5.59 - j 2.12
4.97 - j 1.25
4.68 - j 0.37
4.59 + j 0.45
4.67 + j 1.19
4.90 + j 1.82
5.28 + j 2.31
Note1 VDD = 28V, IDQ = 1.2 A in the 440095 package.
Note2 Impedances are extracted from CGH09120F-AMP demonstration circuit
and are not source and load pull data derived from transistor.
CGH09120F Power Dissipation De-rating Curve
70
60
50
40
30
20
10
0
Note 1
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGH09120F Rev 2.1
CGH09120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
R2
RES, 1/16W, 0603, 1%, 511 OHMS
RES, 1/16W, 0603, 1%, 5.1 OHMS
1
1
2
1
2
2
C1, C24
C2
CAP, 33 pF +/- 5%, 250V, 0805, ATC 600F
CAP, 3.0 pF, +/- 0.1pF, 0603, ATC600S
CAP, 3.3 pF, +/- 0.1pF, 0603, ATC600S
CAP, 2.7 pF, +/- 0.1pF, 0603, ATC600S
C3, C4
C5, C6
C7, C8, C9,
C10, C11, C12
CAP, 6.8pF, +/- 0.25 pF, 0603, ATC600S
6
C13, C25
CAP, 56 pF +/- 5%, 0603 , ATC600S
CAP, 100 pF, +/-5%, 0603, ATC600S
CAP, 470 pF, 5%, 100V, 0603, X7R
CAP, 33000 pF, 0805, 100V, X7R
CAP, 10 uF, 16V, TANTALUM
2
2
2
2
1
4
2
1
1
1
1
2
1
1
1
C14, C26
C15, C27
C16, C28
C17
C18, C19, C20, C21
CAP, 3.9 pF, +/- 0.1pF, 0603, ATC600S
CAP, 2.4PF, +/-0.1 pF, 0603, ATC600S
CAP, 1.0 uF, +/-10%, 1210, 100V, X7R
CAP 100 uF, 160V, ELECTROLYTIC
INDUCTOR, CHIP, 10nH, 0603, SMT
FERRITE, 22 OHM, 0805, BLM21PG220SN1
CONN, N-Type, Female, 0.500 SMA Flange
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
PCB, RO4003, Er = 3.38, h = 32 mil
CGH09120F
C22, C23
C29
C30
L1
L2
J1, J2
J3
-
-
CGH09120F-AMP Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGH09120F Rev 2.1
CGH09120F-AMP Demonstration Amplifier Circuit Schematic
CGH09120F-AMP Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGH09120F Rev 2.1
Typical Package S-Parameters for CGH09120F
(Small Signal, VDS = 28 V, IDQ = 1.2 A, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
600 MHz
700 MHz
800 MHz
900 MHz
1.0 GHz
1.1 GHz
1.2 GHz
1.3 GHz
1.4 GHz
1.5 GHz
1.6 GHz
1.7 GHz
1.8 GHz
1.9 GHz
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
3.2 GHz
3.4 GHz
3.6 GHz
3.8 GHz
4.0 GHz
4.2 GHz
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
5.2 GHz
5.4 GHz
5.6 GHz
5.8 GHz
6.0 GHz
0.962
0.962
0.962
0.962
0.962
0.962
0.962
0.962
0.961
0.961
0.961
0.961
0.961
0.960
0.960
0.960
0.959
0.959
0.958
0.958
0.957
0.956
0.956
0.955
0.954
0.953
0.951
0.948
0.945
0.941
0.936
0.931
0.924
0.916
0.907
0.896
0.882
0.865
0.844
0.818
0.787
-177.69
-178.94
-179.97
179.14
178.33
177.59
176.88
176.21
175.55
174.91
174.28
173.65
173.02
172.40
171.77
171.14
170.50
169.86
169.20
168.54
167.86
167.17
166.46
165.74
165.00
164.24
162.65
160.96
159.15
157.21
155.11
152.81
150.30
147.52
144.44
140.98
137.08
132.66
127.59
121.74
114.95
4.16
3.46
2.97
2.59
2.30
2.07
1.88
1.73
1.59
1.48
1.38
1.29
1.22
1.15
1.09
1.04
1.00
0.95
0.92
0.88
0.85
0.82
0.80
0.78
0.76
0.74
0.71
0.68
0.67
0.65
0.65
0.64
0.65
0.66
0.67
0.69
0.72
0.75
0.79
0.84
0.90
80.41
77.69
75.09
72.58
70.14
67.74
65.40
63.09
60.83
58.60
56.40
54.24
52.12
50.02
47.96
45.93
43.92
41.94
39.99
38.07
36.16
34.28
32.42
30.58
28.75
26.94
23.34
19.78
16.22
12.64
9.02
0.006
0.006
0.006
0.006
0.006
0.007
0.007
0.007
0.007
0.008
0.008
0.008
0.008
0.009
0.009
0.010
0.010
0.011
0.011
0.012
0.013
0.013
0.014
0.015
0.015
0.016
0.018
0.021
0.023
0.026
0.029
0.033
0.038
0.043
0.049
0.056
0.065
0.075
0.087
0.102
0.119
15.01
17.16
19.38
21.64
23.89
26.12
28.30
30.42
32.47
34.43
36.30
38.06
39.70
41.24
42.65
43.95
45.13
46.19
47.13
47.96
48.68
49.30
49.81
50.22
50.54
50.76
50.94
50.78
50.30
49.50
48.38
46.95
45.18
43.05
40.54
37.59
34.17
30.19
25.59
20.26
14.11
0.812
0.814
0.815
0.816
0.818
0.820
0.821
0.823
0.825
0.827
0.829
0.831
0.833
0.835
0.836
0.838
0.840
0.841
0.843
0.844
0.846
0.847
0.848
0.849
0.850
0.850
0.851
0.851
0.850
0.848
0.846
0.842
0.837
0.831
0.823
0.813
0.801
0.786
0.769
0.749
0.725
-179.78
179.92
179.65
179.40
179.15
178.90
178.64
178.37
178.09
177.80
177.50
177.18
176.84
176.49
176.13
175.75
175.35
174.93
174.50
174.05
173.59
173.11
172.61
172.10
171.56
171.01
169.86
168.62
167.31
165.90
164.39
162.78
161.04
159.17
157.14
154.94
152.55
149.94
147.10
143.99
140.60
5.33
1.52
-2.44
-6.59
-11.01
-15.75
-20.88
-26.51
-32.73
-39.65
To download the s-parameters in s2p format, go to the CGH09120F Product Page and click on the documentation tab.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGH09120F Rev 2.1
Product Dimensions CGH09120F (Package Type — 440095)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
11
CGH09120F Rev 2.1
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGH09120F
GaN HEMT
Each
CGH09120F-TB
Test board without GaN HEMT
Each
CGH09120F-AMP
Test board with GaN HEMT installed
Each
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
12
CGH09120F Rev 2.1
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
13
CGH09120F Rev 2.1
相关型号：
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