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CGH27015F-TB [CREE]

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-2;

CGH27015F-TB


元器件型号：	CGH27015F-TB
生产厂家：	CREE, INC
描述和应用：	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-2 局域网放大器 CD 晶体管
PDF文件：	总11页 (文件大小：3299K)
下载文档：	下载PDF数据表文档文件
型号参数：CGH27015F-TB参数

CGH27015P

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-2

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0 CREE

CGH27015S

Transistor

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0 CREE

CGH27030F

30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX

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76 CREE

CGH27030F_15

30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

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0 CREE

CGH27030F-AMP

30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

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0 CREE

CGH27030F-TB

30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

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0 CREE

CGH27030P

30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

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0 CREE

CGH27030S

RF Power Field-Effect Transistor,

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0 CREE

CGH27030S-AMP1

30 W, DC - 6.0 GHz, 28 V, GaN HEMT

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1 CREE

CGH27030S-AMP2

30 W, DC - 6.0 GHz, 28 V, GaN HEMT

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0 CREE

CGH27030S-TR

30 W, DC - 6.0 GHz, 28 V, GaN HEMT

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0 CREE

CGH27060F

60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX

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41 CREE

CGH27060F_15

60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz

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0 CREE

CGH27060F-AMP

60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz

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0 CREE

CGH27060F-TB

60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz

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0 CREE

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