CGH35060F2-TB [CREE]

RF Power Field-Effect Transistor;
CGH35060F2-TB
型号: CGH35060F2-TB
厂家: CREE, INC    CREE, INC
描述:

RF Power Field-Effect Transistor

文件: 总10页 (文件大小:1280K)
下载:  下载PDF数据表文档文件

CGH35060P1

RF Power Field-Effect Transistor,

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0 CREE

CGH35060P2

RF Power Field-Effect Transistor,

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0 CREE

CGH35060-TB

60 W, 3100-3500 MHz, 28V, GaN HEMT

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0 CREE

CGH351T500V2C

Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 500V, 50% +Tol, 10% -Tol, 350uF, Chassis Mount, CAN

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0 CDE

CGH351T500V2-C

Inverter Grade Screw Terminal Aluminum Electrolytic 85 ⅹC, Screw Terminal Capacitors

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3 CDE

CGH351T500V2C0ND

CAP,AL2O3,350UF,500VDC,10% -TOL,50% +TOL

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0 CDE

CGH351T500V2C0NG

CAP,AL2O3,350UF,500VDC,10% -TOL,50% +TOL

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0 CDE

CGH351T500V2C0NN

CAP,AL2O3,350UF,500VDC,10% -TOL,50% +TOL

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0 CDE

CGH351T500V2C0NV

CAP,AL2O3,350UF,500VDC,10% -TOL,50% +TOL

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0 CDE

CGH351T500V2C0PD

CAP,AL2O3,350UF,500VDC,10% -TOL,50% +TOL

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0 CDE

CGH351T500V2C0PF

CAP,AL2O3,350UF,500VDC,10% -TOL,50% +TOL

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0 CDE

CGH351T500V2C0PG

CAP,AL2O3,350UF,500VDC,10% -TOL,50% +TOL

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0 CDE

CGH351T500V2C0PL

CAP,AL2O3,350UF,500VDC,10% -TOL,50% +TOL

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0 CDE

CGH351T500V2C7PV

CAP,AL2O3,350UF,500VDC,10% -TOL,50% +TOL

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0 CDE

CGH35240F

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-2

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0 CREE