CGH40006P-TB [CREE]
6 W, RF Power GaN HEMT;
| 型号： | CGH40006P-TB |
| 厂家： | 
CREE, INC |
| 描述： | 6 W, RF Power GaN HEMT |
| 文件： | 总14页 (文件大小：1881K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGH40006P
6 W, RF Power GaN HEMT
Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobil
transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a gener
purpose, broadband solution to a variety of RF and microwave applications. Ga
HEMTs offer high efficiency, high gain and wide bandwidth capabilities making th
CGH40006P ideal for linear and compressed amplifier circuits. The transistor is
available in a solder-down, pill package.
FEATURES
APPLICATIONS
•
•
•
•
•
•
Up to 6 GHz Operation
•
•
•
•
•
2-Way Private Radio
13 dB Small Signal Gain at 2.0 GHz
11 dB Small Signal Gain at 6.0 GHz
8 W typical at PIN = 32 dBm
65 % Efficiency at PIN = 32 dBm
28 V Operation
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
Rating
84
Units
Volts
Volts
˚C
Conditions
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
VGS
-10, +2
-65, +150
225
25˚C
Storage Temperature
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Thermal Resistance, Junction to Case3
Case Operating Temperature3
T
˚C
J
IGMAX
IDMAX
TS
2.1
mA
A
25˚C
25˚C
0.75
245
˚C
RθJC
TC
9.5
˚C/W
˚C
85˚C
-40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH40006P at PDISS = 8 W.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
2.1
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 2.1 mA
VDS = 28 V, ID = 100 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 2.1 mA
1.7
120
–
Drain-Source Breakdown Voltage
VBR
–
VDC
RF Characteristics2 (TC = 25˚C, F0 = 2.0 GHz unless otherwise noted)
Small Signal Gain
GSS
POUT
η
11.5
7.0
53
13
9
–
–
–
dB
W
%
VDD = 28 V, IDQ = 100 mA
VDD = 28 V, IDQ = 100 mA
Power Output at PIN = 32 dBm
Drain Efficiency3
65
VDD = 28 V, IDQ = 100 mA, PIN = 32 dBm
No damage at all phase angles,
VDD = 28 V, IDQ = 100 mA,
PIN = 32 dBm
Y
Output Mismatch Stress
VSWR
–
–
10 : 1
Dynamic Characteristics
Input Capacitance
CGS
CDS
CGD
–
–
–
3.0
1.1
0.1
–
–
–
pF
pF
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
Feedback Capacitance
Notes:
1 Measured on wafer prior to packaging.
2 Measured in CGH40006P-AMP.
3 Drain Efficiency = POUT / PDC
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGH40006P Rev 3.0
Typical Performance
Small Signal Gain vs Frequency at 28 V
Input & Output Return Losses vs Frequency
of the CGH40006P in the CGH40006P-AMP
28 V of the CGH40006P in the CGH40006P-AMP
0
20
18
16
14
12
10
8
-2
-4
-6
-8
-10
-12
-14
6
S11
-16
4
S22
-18
-20
2
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
Frequency (GHz)
Small Signal Gain vs Frequency at 20 V
CGH40006P in the CGH40006P-AMP
Input & Output Return Losses vs Frequency at of the
20 V of the CGH40006P in the CGH40006P-AMP
20
18
16
14
12
10
8
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
6
S22
S11
4
2
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGH40006P Rev 3.0
Typical Performance
Power Gain vs Output Power as a Function of Frequency
of the CGH40006P in the CGH40006P-AMP
VDD = 28 V, IDQ = 100 mA
20
18
16
14
12
10
8
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
6
4
2
0
20
25
30
35
40
Output Power (dBm)
Drain Efficiency vs Output Power as a Function of Frequency
of the CGH40006P in the CGH40006P-AMP
VDD = 28 V, IDQ = 100 mA
70%
60%
50%
40%
30%
20%
10%
0%
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
20
25
30
35
40
Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGH40006P Rev 3.0
Typical Performance
Power Gain vs Frequency of the CGH40006P
Power Gain vs Frequency of the CGH40006P
in the CGH40006P-AMP at PIN = 32 dBm, VDD = 28 V
10
in the CGH40006P-AMP at PIN = 30 dBm, VDD = 20 V
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Frequency (GHz)
Frequency (GHz)
Output Power vs Frequency of the CGH40006P
Output Power vs Frequency of the CGH40006P
in the CGH40006P-AMP at PIN = 32 dBm, VDD = 28 V
12
in the CGH40006P-AMP at PIN = 30 dBm, VDD = 20 V
12
10
8
10
8
6
6
4
4
2
2
0
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Frequency (GHz)
Frequency (GHz)
Drain Efficiency vs Frequency of the CGH40006P
Drain Efficiency vs Frequency of the CGH40006P
in the CGH40006P-AMP at PIN = 32 dBm, VDD = 28 V
70%
in the CGH40006P-AMP at PIN = 30 dBm, VDD = 20 V
70%
60%
50%
40%
30%
20%
10%
0%
60%
50%
40%
30%
20%
10%
0%
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Frequency (GHz)
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGH40006P Rev 3.0
Typical Performance
Third Order Intermodulation Distortion vs Average Output Power
as a Function of Frequency of the CGH40006P in the CGH40006P-AMP
VDD = 28 V, IDQ = 60 mA
0.0
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
-10.0
-20.0
-30.0
-40.0
-50.0
-60.0
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
Output Power (dBm)
Simulated Maximum Available Gain and K Factor of the CGH40006P
VDD = 28 V, IDQ = 100 mA
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGH40006P Rev 3.0
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006P
VDD = 28 V, IDQ = 100 mA
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A > 250 V
1 < 200 V
CDM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGH40006P Rev 3.0
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
13.78 + j6.9
4.78 + j1.78
2.57 - j6.94
3.54 - j14.86
4.42 - j25.8
7.1 - j42.7
Z Load
1000
2000
3000
4000
5000
6000
61.5 + j47.4
19.4 + j39.9
12.57 + j23.1
9.44 + j11.68
9.78 + j4.85
9.96 - j4.38
Note 1. VDD = 28V, IDQ = 100mA in the 440109 package.
Note 2. Optimized for power gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be
used to maintain amplifier stability.
CGH40006P Power Dissipation De-rating Curve
9
8
7
6
5
4
3
2
1
0
Note 1
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGH40006P Rev 3.0
CGH40006P-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
R2
RES, AIN, 0505, 470 Ohms (≤5% tolerance)
RES, AIN, 0505, 10 Ohms (≤5% tolerance)
RES, AIN, 0505, 150 Ohms (≤5% tolerance)
CAP, 2.0 pF +/-0.1 pF, 0603, ATC 600S
CAP, 4.7 pF +/-0.1 pF, 0603, ATC 600S
CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S
CAP, 8.2 pF +/-0.25, 0603, ATC 600S
CAP, 470 pF +/-5%, 0603, 100 V
1
1
1
1
1
1
2
2
2
1
1
1
2
1
1
1
R3
C1
C2
C10
C4,C11
C6,C13
C7,C14
C8
CAP, 33000 pF, CER, 100V, X7R, 0805
CAP, 10 uf, 16V, SMT, TANTALUM
CAP, 1.0 uF +/-10%, CER, 100V, X7R, 1210
CAP, 33 uF, 100V, ELECT, FK, SMD
CONN, SMA, STR, PANEL, JACK, RECP
HEADER RT>PLZ .1CEN LK 5POS
PCB, RO5880, 20 MIL
C15
C16
J3,J4
J1
-
Q1
CGH40006P
CGH40006P-AMP Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGH40006P Rev 3.0
CGH40006P-AMP Demonstration Amplifier Circuit Schematic
CGH40006P-AMP Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGH40006P Rev 3.0
Typical Package S-Parameters for CGH40006P
(Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
600 MHz
700 MHz
800 MHz
900 MHz
1.0 GHz
1.1 GHz
1.2 GHz
1.3 GHz
1.4 GHz
1.5 GHz
1.6 GHz
1.7 GHz
1.8 GHz
1.9 GHz
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
3.2 GHz
3.4 GHz
3.6 GHz
3.8 GHz
4.0 GHz
4.2 GHz
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
5.2 GHz
5.4 GHz
5.6 GHz
5.8 GHz
6.0 GHz
0.905
0.889
0.877
0.867
0.860
0.854
0.849
0.845
0.842
0.839
0.837
0.835
0.833
0.832
0.830
0.829
0.828
0.827
0.826
0.825
0.824
0.823
0.821
0.820
0.819
0.818
0.816
0.813
0.810
0.807
0.804
0.801
0.797
0.793
0.789
0.785
0.780
0.776
0.772
0.768
0.764
-96.56
-107.98
-117.55
-125.66
-132.61
-138.66
-143.98
-148.73
-153.01
-156.90
-160.49
-163.81
-166.92
-169.85
-172.62
-175.27
-177.81
179.75
177.38
175.07
172.82
170.61
168.44
166.30
164.18
162.08
157.91
153.76
149.58
145.35
141.05
136.66
132.15
127.50
122.70
117.72
112.55
107.17
101.58
95.76
18.30
16.39
14.76
13.37
12.19
11.18
10.31
9.56
8.90
8.33
7.82
7.37
6.96
6.60
6.27
5.98
5.71
5.46
5.24
5.03
4.84
4.67
4.51
4.36
4.22
4.09
3.85
3.65
3.47
3.31
3.18
3.05
2.94
2.85
2.76
2.68
2.62
2.55
2.50
2.44
2.40
120.62
113.31
106.99
101.43
96.46
91.94
87.79
83.92
80.29
76.84
73.56
70.40
67.36
64.41
61.54
58.74
56.00
53.32
50.68
48.09
45.53
43.00
40.50
38.02
35.57
33.13
28.31
23.53
18.78
14.05
9.32
0.023
0.025
0.026
0.027
0.028
0.028
0.028
0.028
0.028
0.028
0.028
0.028
0.028
0.028
0.028
0.028
0.028
0.027
0.027
0.027
0.027
0.026
0.026
0.026
0.026
0.026
0.025
0.025
0.025
0.024
0.024
0.024
0.025
0.025
0.026
0.027
0.029
0.030
0.032
0.035
0.037
35.87
29.63
24.39
19.92
16.05
12.66
9.64
0.456
0.429
0.408
0.393
0.381
0.374
0.368
0.366
0.365
0.365
0.367
0.369
0.373
0.376
0.381
0.386
0.391
0.396
0.401
0.407
0.412
0.418
0.423
0.428
0.434
0.439
0.449
0.458
0.467
0.474
0.481
0.488
0.493
0.497
0.500
0.503
0.504
0.505
0.504
0.503
0.501
-52.76
-58.98
-64.31
-68.96
-73.11
-76.87
-80.34
6.92
-83.57
4.46
-86.61
2.22
-89.49
0.15
-92.24
-1.75
-94.88
-3.51
-97.43
-5.15
-99.88
-6.67
-102.27
-104.58
-106.84
-109.04
-111.19
-113.29
-115.36
-117.38
-119.36
-121.32
-123.24
-125.13
-128.84
-132.46
-136.00
-139.48
-142.91
-146.30
-149.67
-153.02
-156.37
-159.74
-163.14
-166.59
-170.10
-173.70
-177.41
-8.08
-9.40
-10.61
-11.73
-12.77
-13.71
-14.57
-15.34
-16.02
-16.62
-17.13
-17.89
-18.30
-18.38
-18.13
-17.60
-16.82
-15.89
-14.87
-13.89
-13.04
-12.42
-12.13
-12.22
-12.75
-13.73
4.57
-0.20
-5.01
-9.86
-14.79
-19.78
-24.86
-30.03
-35.30
-40.69
89.70
To download the s-parameters in s2p format, go to the CGH40006P Product Page and click on the documentation tab.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
11
CGH40006P Rev 3.0
Product Dimensions CGH40006P (Package Type — 440109)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
12
CGH40006P Rev 3.0
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGH40006P
GaN HEMT
Each
CGH40006P-TB
Test board without GaN HEMT
Each
CGH40006P-AMP
Test board with GaN HEMT installed
Each
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
13
CGH40006P Rev 3.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, Wireless Devices
1.919.287.7816
Tom Dekker
Sales Director
Cree, Wireless Devices
1.919.313.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
14
CGH40006P Rev 3.0
相关型号：
CGH40006S
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET, QFN-6
CREE
CGH40006S-TB
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET, 3 X 3 MM, PLASTIC, QFN-6
CREE
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