CGH55030P1 [CREE]
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-2;
| 型号： | CGH55030P1 |
| 厂家： | 
CREE, INC |
| 描述： | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-2 放大器 CD 晶体管 |
| 文件： | 总12页 (文件大小：689K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGH55030F1 / CGH55030P1
30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high elec
mobility transistor (HEMT) designed specifically for high efficiency, high
andwidebandwidthcapabilities, whichmakestheCGH55030F1/CGH5503
ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transisto
available in both screw-down, flange and solder-down, pill packages. Ba
on appropriate external match adjustment, the CGH55030F1/CGH55030
is suitable for 4.9 - 5.5 GHz applications as well.
Typical Performance Over 5.5-5.8GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.50 GHz
5.65 GHz
5.80 GHz
Units
Small Signal Gain
9.5
10.0
9.5
dB
EVM at PAVE = 29 dBm
EVM at PAVE = 36 dBm
Drain Efficiency at PAVE = 4 W
Input Return Loss
1.1
2.2
23
0.9
1.4
24
0.9
1.4
25
%
%
%
dB
10.8
22
9.3
Note:
Measured in the CGH55030-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM
Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
•
•
•
•
•
•
•
300 MHz Instantaneous Bandwidth
30 W Peak Power Capability
10 dB Small Signal Gain
4 W PAVE < 2.0 % EVM
25 % Efficiency at 4 W Average Power
Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
Designed for Multi-carrier DOCSIS Applications
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
84
Volts
25˚C
Gate-to-Source Voltage
Power Dissipation
VGS
PDISS
TSTG
TJ
-10, +2
Volts
Watts
˚C
25˚C
14
-65, +150
225
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
˚C
IGMAX
IDMAX
TS
7.0
mA
25˚C
25˚C
3
A
245
˚C
60
in-oz
˚C/W
˚C
τ
Thermal Resistance, Junction to Case3
Case Operating Temperature3
RθJC
4.8
85˚C
TC
-40, +150
30 seconds
Note:
1
Current limit for long term, reliable operation.
Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp
Measured for the CGH55030F1 at PDISS = 14 W
2
3
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
7.0
–
–2.3
VDC
VDC
A
VDS = 10 V, ID = 7.2 mA
VDS = 28 V, ID = 250 mA
VDS = 6.0 V, VGS = 2 V
VGS = -8 V, ID = 7.2 mA
Gate Quiescent Voltage
–
–
–
Saturated Drain Current
Drain-Source Breakdown Voltage
5.8
120
VBR
VDC
RF Characteristics2,3 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted)
Small Signal Gain
Drain Efficiency4
GSS
8.5
19
–
10.0
24
–
–
dB
%
%
VDD = 28 V, IDQ = 250 mA
η
VDD = 28 V, IDQ = 250 mA, PAVE = 4 W
VDD = 28 V, IDQ = 250 mA, PAVE = 4 W
Error Vector Magnitude
EVM
2.0
2.5
No damage at all phase angles,
VDD = 28 V, IDQ = 250 mA, PAVE = 4 W
Y
Output Mismatch Stress
VSWR
–
–
10 : 1
Dynamic Characteristics
Input Capacitance
CGS
CDS
CGD
–
–
–
9.0
2.6
0.4
–
–
–
pF
pF
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
Feedback Capacitance
Notes:
1
Measured on wafer prior to packaging.
Measured in the CGH55030-TB test fixture.
2
3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type
RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4
Drain Efficiency = POUT / PDC.
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
2
CGH55030F1_P1 Rev 3.3
Typical WiMAX Performance
Small Signal S-Parameters vs Frequency of
CGH55030F1 and CGH55030P1 in the CGH55030-TB
VDD = 28 V, IDQ = 250 mA
12
10
8
5
S21
S11
0
-5
6
-10
-15
-20
-25
4
2
0
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6.0
6.1
Frequency (GHz)
Typical EVM and Efficiency versus Frequency of
CGH55030F1 and CGH55030P1 in the CGH55030-TB
VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB, PAVE = 5 W
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30
29
28
27
26
25
24
30 W EVM
3Drain Efficiency
5.45
5.50
5.55
5.60
5.65
5.70
5.75
5.80
5.85
Frequency (GHz)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM
Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding
Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
3
CGH55030F1_P1 Rev 3.3
Typical WiMAX Performance
Drain Efficiency and Gain vs Output Power of
CGH55030F1 and CGH55030P1 in CGH55030-TB
VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB
14
12
10
8
35
30
25
20
15
10
5
5.50 GHz (Gain)
5.65 GHz (Gain)
6
5.80 GHz (Gain)
5.50 GHz (Efficiency)
5.65 GHz (Efficiency)
5.80 GHz (Efficiency)
4
2
0
0
15
20
25
30
35
40
Output Power (dBm)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM
Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding
Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Typical EVM and Drain Efficiency vs Output Power of
CGH55030F1 and CGH55030P1 in CGH55030-TB at
5.50GHz, 5.65 GHz, 5.80GHz, 802.16-2004 OFDM, PAR=9.8 dB
14.0
12.0
10.0
8.0
35
30
25
20
15
10
5
5.50 GHz (EVM)
5.65 GHz (EVM)
5.80 GHz (EVM)
5.50 GHz (Efficiency)
5.65 GHz (Efficiency)
5.80 GHz (Efficiency)
6.0
4.0
2.0
0.0
0
15
20
25
30
35
40
Output Power (dBm)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM
Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding
Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
4
CGH55030F1_P1 Rev 3.3
Typical DOCSIS Performance
Modulation Error Ratio vs Output Power of
CGH55030F1 and CGH55030P1 in Broadband Amplifier Circuit
42
40
38
36
34
5.50 GHz
32
30
5.65 GHz
5.80 GHz
15
20
25
30
35
40
Power Output (dBm)
Note:
MER is the metric of choice for cable systems and can be related to EVM by the following
equation: EVM(%) = 100 x 10 ^ -((MERdB + MTAdB)/20). MTA is the “maximum-to-average
constellation power ratio” which varies with the modulation type: MTA = 0 for BPSK and QPSK;
2.55 for 16QAM and 8QAM-DS; 3.68 for 64QAM and 32QAM-DS; 4.23 for 256QAM and 128QAM-DS
EVM vs Output Power of CGH55030F1 and CGH55030P1 in Broadband Amplifier Circuit
1.4
5.50 GHz
5.65 GHz
5.80 GHz
1.2
1.0
0.8
0.6
0.4
0.2
0.0
15
20
25
30
35
40
Power Output (dBm)
Note:
Under DOCSIS, 6.0 MHz Channel BW, 64 QAM, PN23, Filter Alpha 0.18, PAR = 6.7dB.
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
5
CGH55030F1_P1 Rev 3.3
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH55030F1/P1
VDD = 28 V, IDQ = 250 mA
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55030F1/P1
VDD = 28 V, IDQ = 250 mA
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
www.cree.com/wireless
6
CGH55030F1_P1 Rev 3.3
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
8.0 – j12.4
8.7 - j13.1
8.4 - j14.0
Z Load
5500
5650
5800
14.1 – j12.6
14.7 – j11.7
15.4 – j11.0
Note 1. VDD = 28V, IDQ = 250 mA in the 440166 package.
Note 2. Impedances are extracted from the CGH55030-TB demonstration
amplifier and are not source and load pull data derived from the transistor.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
II (200 < 500 V)
CDM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
www.cree.com/wireless
7
CGH55030F1_P1 Rev 3.3
CGH55030-TB Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
R2
RES, 1/16W, 0603, 1%, 562 OHMS
RES, 1/16W, 0603, 1%, 22.6 OHMS
CAP, 0.3pF, +/-0.05pF, 0402, ATC600L
CAP, 33 UF, 20%, G CASE
1
1
1
1
1
1
1
1
2
2
2
2
2
1
1
1
C2
C16
C15
C8
CAP, 1.0UF, 100V, 10%, X7R, 1210
CAP 10UF 16V TANTALUM
C9
CAP, 0.4pF, +/-0.05pF, 0603, ATC600S
CAP, 1.2pF, +/-0.1pF, 0603, ATC600S
CAP,200 PF,0603 PKG, 100 V
C1
C6,C13
C4,C11
C5,C12
C7,C14
J3,J4
J1
CAP, 10.0pF,+/-5%, 0603, ATC600S
CAP, 39pF, +/-5%, 0603, ATC600S
CAP, 330000PF, 0805, 100V, TEMP STABILIZ
CONN, SMA, PANEL MOUNT JACK, FLANGE
HEADER RT>PLZ .1CEN LK 5POS
PCB, RO4350B, Er = 3.48, h = 20 mil
CGH55030
-
-
CGH55030-TB Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
8
CGH55030F1_P1 Rev 3.3
CGH55030-TB Demonstration Amplifier Circuit Schematic
(CGH55030F)
CGH55030-TB Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
9
CGH55030F1_P1 Rev 3.3
Typical Package S-Parameters for CGH55030F1 and CGH55030P1
(Small Signal, VDS = 28 V, IDQ = 250 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
600 MHz
700 MHz
800 MHz
900 MHz
1.0 GHz
1.2 GHz
1.4 GHz
1.6 GHz
1.8 GHz
2.0 GHz
2.2 GHz
2.4 GHz
2.6 GHz
2.8 GHz
3.0 GHz
3.2 GHz
3.4 GHz
3.6 GHz
3.8 GHz
4.0 GHz
4.1 GHz
4.2 GHz
4.3 GHz
4.4 GHz
4.5 GHz
4.6 GHz
4.7 GHz
4.8 GHz
4.9 GHz
5.0 GHz
5.1 GHz
5.2 GHz
5.3 GHz
5.4 GHz
5.5 GHz
5.6 GHz
5.7 GHz
5.8 GHz
5.9 GHz
6.0 GHz
0.917
0.916
0.916
0.916
0.916
0.916
0.917
0.918
0.919
0.921
0.922
0.924
0.925
0.926
0.928
0.929
0.930
0.931
0.932
0.933
0.933
0.934
0.934
0.934
0.934
0.935
0.935
0.935
0.935
0.935
0.935
0.935
0.935
0.935
0.935
0.935
0.935
0.934
0.934
0.934
0.934
-157.22
-161.92
-165.46
-168.28
-170.61
-172.60
-175.88
-178.57
179.09
176.98
175.03
173.17
171.39
169.65
167.93
166.24
164.54
162.85
161.14
159.42
157.68
156.80
155.91
155.01
154.11
153.20
152.28
151.35
150.41
149.46
148.49
147.52
146.53
145.53
144.52
143.49
142.45
141.39
140.31
139.22
138.12
12.62
10.57
9.07
7.94
7.05
6.33
5.24
4.46
3.87
3.40
3.03
2.73
2.47
2.26
2.08
1.92
1.78
1.66
1.55
1.46
1.38
1.34
1.31
1.27
1.24
1.21
1.18
1.16
1.13
1.11
1.08
1.06
1.04
1.02
1.00
0.99
0.97
0.95
0.94
0.93
0.91
91.45
87.33
83.78
80.58
77.64
74.88
69.73
64.94
60.41
56.07
51.90
47.87
43.97
40.19
36.52
32.94
29.45
26.05
22.72
19.46
16.27
14.69
13.12
11.57
10.03
8.49
0.018
0.018
0.018
0.018
0.017
0.017
0.017
0.017
0.016
0.016
0.015
0.014
0.014
0.013
0.013
0.013
0.012
0.012
0.012
0.012
0.012
0.012
0.012
0.012
0.013
0.013
0.013
0.013
0.014
0.014
0.015
0.015
0.016
0.016
0.017
0.018
0.018
0.019
0.020
0.020
0.021
7.56
4.70
0.458
0.465
0.472
0.478
0.485
0.493
0.508
0.525
0.542
0.559
0.577
0.594
0.610
0.626
0.642
0.656
0.670
0.683
0.695
0.706
0.716
0.721
0.726
0.730
0.735
0.739
0.743
0.746
0.750
0.753
0.756
0.760
0.762
0.765
0.768
0.770
0.773
0.775
0.777
0.779
0.781
-158.97
-160.93
-162.19
-163.04
-163.64
-164.09
-164.77
-165.36
-165.99
-166.73
-167.59
-168.57
-169.67
-170.88
-172.17
-173.55
-175.00
-176.50
-178.06
-179.66
178.70
177.86
177.02
176.17
175.30
174.44
173.56
172.67
171.78
170.88
169.97
169.05
168.12
167.18
166.24
165.28
164.32
163.35
162.36
161.37
160.36
2.41
0.51
-1.12
-2.55
-4.94
-6.84
-8.31
-9.39
-10.06
-10.31
-10.12
-9.46
-8.31
-6.65
-4.49
-1.85
1.19
4.55
8.08
9.87
11.64
13.38
15.08
16.71
18.26
19.72
21.09
22.35
23.50
24.55
25.48
26.30
27.02
27.62
28.12
28.53
28.83
29.05
29.18
6.97
5.46
3.95
2.46
0.96
-0.52
-2.00
-3.48
-4.96
-6.43
-7.90
-9.37
-10.84
-12.32
-13.79
Download this s-parameter file in “.s2p” format at http://www.cree.com/products/wireless_s-parameters.asp
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
www.cree.com/wireless
10
CGH55030F1_P1 Rev 3.3
Product Dimensions CGH55030F1 (Package Type — 440166)
Product Dimensions CGH55030P1 (Package Type — 440196)
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
11
CGH55030F1_P1 Rev 3.3
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent
or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are
provided for information purposes only. These values can and do vary in different applications and actual performance
can vary over time. All operating parameters should be validated by customer’s technical experts for each application.
Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear
facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
12
CGH55030F1_P1 Rev 3.3
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