CGHV27015S-AMP1 [CREE]
15 W, DC - 6.0 GHz, 50 V, GaN HEMT;
| 型号： | CGHV27015S-AMP1 |
| 厂家： | 
CREE, INC |
| 描述： | 15 W, DC - 6.0 GHz, 50 V, GaN HEMT |
| 文件： | 总12页 (文件大小：1416K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGHV27015S
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The
CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications
from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as
well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a Vdd of 50 V, the device
provide 2.5W of average power or 15W of peak power. At a Vdd of 28V, the device provides 1S
of average power and 7W of peak power. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-
no-lead (DFN) package.
Typical Performance 2.4-2.7 GHz (TC = 25˚C) , 50 V
Parameter
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
Units
Small Signal Gain
23
22
21.7
21.2
dB
Adjacent Channel Power @ POUT = 2.5 W
Drain Efficiency @ POUT = 2.5 W
Input Return Loss
-36.7
35.9
-40.7
33.5
-9.6
-42.4
30.4
-8.6
-42.5
30.2
-7.8
dBc
%
-9.312
dB
Note:
Measured in the CGHV27015S-AMP1 application circuit.
Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH.
Features for 50 V in CGHV27015S-AMP1
•
2.4 - 2.7 GHz Operation
•
•
•
•
•
15 W Typical Output Power
21 dB Gain at 2.5 W PAVE
-38 dBc ACLR at 2.5 W PAVE
32% efficiency at 2.5 W PAVE
High degree of APD and DPD correction can be applied
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
Rating
125
Units
Volts
Volts
˚C
Notes
25˚C
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
VGS
-10, +2
-65, +150
225
Storage Temperature
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Case Operating Temperature3
Thermal Resistance, Junction to Case4
T
˚C
J
IGMAX
IDMAX
TS
2
mA
A
25˚C
25˚C
0.9
245
˚C
TC
-40, +150
11.1
˚C
RθJC
˚C/W
85˚C
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/rf/document-library
3 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. See also, the Power
Dissipation De-rating Curve on page 7.
4 Measured for the CGHV27015S at PDISS = 5 W
5 The RTH for Cree’s demonstration amplifier, CGHV27015S-AMP1, with 31 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is 3.9°C. The total
RTH from the heat sink to the junction is 11.1°C + 3.9°C = 15°C/W.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.6
1.78
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 2 mA
VDS = 50 V, ID = 60 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 2 mA
1.48
150
–
Drain-Source Breakdown Voltage
V(BR)DSS
–
VDC
RF Characteristics2,3 (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted)
Gain
G
ACLR
η
–
–
–
21.2
-42.5
30.2
-
–
-
dB
dBc
%
VDD = 50 V, IDQ = 60 mA, POUT = 34 dBm
VDD = 50 V, IDQ = 60 mA, POUT = 34 dBm
VDD = 50 V, IDQ = 60 mA, POUT = 34 dBm
WCDMA Linerarity4
Drain Efficiency4
No damage at all phase angles,
VDD = 50 V, IDQ = 60 mA, POUT = 34 dBm
Y
Output Mismatch Stress
VSWR
-
10 : 1
-
Dynamic Characteristics
Input Capacitance5
CGS
CDS
CGD
–
–
–
3.15
1.06
–
–
–
pF
pF
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance5
Feedback Capacitance
0.058
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in Cree’s production test fixture. This fixture is designed for high volume test at 2.7 GHz
4 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF
5 Includes package and internal matching components
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGHV27015S Rev 2.0
Typical Performance in Application Circuit CGHV27015S-AMP1
Figure 1. - Small Signal Gain and Return Losses vs Frequency
VDD = 50 V, IDQ = 60 mA
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
S11
S21
S22
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
Frequency (GHz)
Figure 2. - Typical Drain Efficiency and ACLR vs. Output Power
VDD = 50 V, IDQ = 60 mA, 1 Carrier WCDMA, PAR = 7.5 dB
0
45
40
35
30
25
20
15
10
5
-5
-10
-15
-20
-25
-30
-35
-40
-45
ACLR_2p4
ACLR_2p5
ACLR_2P6
Efficiency
ACLR_2p7
EFF_2p4
EFF_2p5
EFF_2P6
EFF_2p7
ACLR
0
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38
Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGHV27015S Rev 2.0
Typical Performance in Application Circuit CGHV27015S-AMP1
Figure 3. - Typical Gain, Drain Efficiency and ACLR vs Frequency
VDD = 50 V , IDQ = 60 mA, PAVE = 2.5 W, 1 Carrier WCDMA, PAR = 7.5 dB
40
35
30
25
20
15
10
5
-25.0
-27.5
Drain Efficiency
-30.0
-32.5
Gain
-35.0
-37.5
-40.0
GAIN
EFF
-42.5
ACLR
ACLR
0
-45.0
2.35
2.40
2.45
2.50
2.55
2.60
2.65
2.70
2.75
Frequency (GHz)
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
CDM
2 (125 V to 250 V)
Moisture Sensitivity Level (MSL) Classification
Parameter
Symbol
Level
Test Methodology
Moisture Sensitivity Level
MSL
3 (168 hours)
IPC/JEDEC J-STD-20
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGHV27015S Rev 2.0
Typical Performance
GMAX and K-Factor vs Frequency
VDD = 50 V, IDQ = 60 mA, Tcase = 25°C
40
35
30
25
20
15
10
1.25
1
Gmax
K-Factor
0.75
0.5
0.25
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGHV27015S Rev 2.0
Source and Load Impedances for Application Circuit CGHV27015S-AMP1
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
2400
2500
2600
2700
7.9 + j2.14
8 + j2.9
15.8 + j43.1
18.3 + j43.7
19.7 + j43.4
19.7 + j43.4
7.9 + j3.6
7.7 - j4.4
Note1: VDD = 50 V, IDQ = 60 mA in the DFN package.
Note2: Impedances are extracted from the CGHV27015S-AMP1 application
circuit and are not source and load pull data derived from the transistor.
CGHV27015S-AMP1 Application Circuit Bill of Materials
Designator
Description
Qty
R1
R2
RES, 332,OHM, +/- 1%, Vishay
1
1
1
RES, 22.6,OHM, +/- 1%, 1/16W, 0603
RES, 2.2,OHM, +/- 1%, 1/16W, 0603
R3, R4
C1, C4
CAP, 27pF, +/- 5%, 0603, ATC
CAP, 2.0pF,+/-0.1pF, 0603 ATC
2
1
C2
C3
C8
CAP, 0.1pF,+/-0.05 pF, 0603, ATC
CAP, 6.2pF, +/-0.1pF, 0603, ATC
CAP, 10pF +/-5%, 0603, ATC
2
1
1
C13
C6, C11
CAP, 33000pF, 0805, ATC
2
C7, C12
C10
CAP, 470PF, 5%, 100V, 0603,
2
1
CAP, 1.0UF, 100V, 10%, X7R, 1210
C5
CAP 10UF 16V TANTALUM
CAP, 33UF, 20%, G CASE
1
C9
1
2
J1, J2
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE,
BLUNT POST
J3
HEADER RT>PLZ .1CEN LK 5POS
CGHV27015S, DFN
1
1
Q1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGHV27015S Rev 2.0
CGHV27015S-AMP1 Application Circuit, 50 V
CGHV27015S-AMP1 Application Circuit Schematic, 50 V
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGHV27015S Rev 2.0
CGHV27015S-AMP1 Application Circuit, 50 V
CGHV27015S-AMP1 Power Dissipation De-rating Curve
7
6
5
4
3
2
1
0
Note 1
0
25
50
75
100
125
150
175
200
225
250
Maximum Temperature (°C)
Note 1. Area exceeds Maximum Case Temperature (See Page 2)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGHV27015S Rev 2.0
Product Dimensions CGHV27015S (Package 3 x 4 DFN)
Pin
Input/Output
1
2
GND
NC
3
RF IN
RF IN
NC
4
5
6
GND
GND
NC
7
8
9
RF OUT
RF OUT
NC
10
11
12
GND
Note: Leadframe finish for 3x4 DFN package is Nickel/Palladium/Gold. Gold is the outer layer.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGHV27015S Rev 2.0
Part Number System
CGHV27015S
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Value
Units
Upper Frequency1
Power Output
Package
2.7
15
GHz
W
-
Surface Mount
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
0
1
2
3
4
5
6
7
8
9
F
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGHV27015S Rev 2.0
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGHV27015S
GaN HEMT
Each
CGHV27015S-AMP1
Test board with GaN HEMT installed
Each
CGHV27015S-TR
Delivered in Tape and Reel
250 parts / reel
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
11
CGHV27015S Rev 2.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.313.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
12
CGHV27015S Rev 2.0
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