CGHV40050 [CREE]
50 W, DC - 4.0 GHz, 50 V, GaN HEMT;
| 型号： | CGHV40050 |
| 厂家： | 
CREE, INC |
| 描述： | 50 W, DC - 4.0 GHz, 50 V, GaN HEMT |
| 文件： | 总11页 (文件大小：3038K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGHV40050
50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electro
mobility transistor (HEMT). The CGHV40050, operating from a 50 vo
rail, offers a general purpose, broadband solution to a variety of RF an
microwave applications up to 4 GHz. The reference HPA design in th
datasheet operates from 800 MHz to 2 GHz operation instantaneously
It is a demonstration amplifier to showcase the CGHV40050’s high
efficiency, high gain and wide bandwidth capabilities. The device can be
used for a range of applications from narrow band UHF, L and S Band as
well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and
pill package.
Typical Performance Over 800 MHz - 2.5 GHz (TC = 25˚C), 50 V
Parameter
800 MHz
1.2 GHz
1.4 GHz
1.8 GHz
2.0 GHz
Units
Small Signal Gain
17.6
16.9
17.7
17.5
14.8
dB
Saturated Output Power
Drain Efficiency @ PSAT
Input Return Loss
Note:
65
63
5
70
63
63
60
77
53
8
60
52
5
W
%
5.5
4.2
dB
Measured CW in the CGHV40050F-AMP application circuit.
Features
•
•
•
•
•
•
Up to 4 GHz Operation
77 W Typical Output Power
17.5 dB Small Signal Gain at 1.8 GHz
Application Circuit for 0.8 - 2.0 GHz
53 % Efficiency at PSAT
50 V Operation
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
Rating
150
Units
Volts
Volts
˚C
Conditions
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
VGS
-10, +2
-65, +150
225
25˚C
Storage Temperature
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
T
˚C
J
IGMAX
IDMAX
TS
10.4
mA
A
25˚C
25˚C
6.3
245
˚C
40
in-oz
˚C/W
˚C/W
˚C
τ
Thermal Resistance, Junction to Case3
Thermal Resistance, Junction to Case4
Case Operating Temperature5
RθJC
RθJC
TC
3.04
85˚C
85˚C
3.11
-40, +80
30 seconds
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGHV40050P at PDISS = 41.6 W.
4 Measured for the CGHV40050F at PDISS = 41.6 W.
5 See also, Power Derating Curve on Page 7.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
10.4
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 10.4 mA
VDS = 50 V, ID = 0.3 A
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
7.8
150
–
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 10.4 mA
VBR
–
VDC
RF Characteristics3 (TC = 25˚C, F0 = 1.8 GHz unless otherwise noted)
Small Signal Gain
Power Gain
GSS
GP
17.5
–
19
–
–
dB
dB
VDD = 50 V, IDQ = 0.3 A
15.5
VDD = 50 V, IDQ = 0.3 A, POUT = PSAT
Power Output at Saturation4
PSAT
70
48
77
53
–
–
W
%
VDD = 50 V, IDQ = 0.3 A
η
Drain Efficiency
VDD = 50 V, IDQ = 0.3 A, POUT = PSAT
No damage at all phase angles,
VDD = 50 V, IDQ = 0.3 A, POUT = 50 W CW
Y
Output Mismatch Stress
VSWR
–
–
10 : 1
Dynamic Characteristics5
Input Capacitance
CGS
CDS
CGD
–
–
–
16
5
–
–
–
pF
pF
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
Feedback Capacitance
0.3
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV40050-AMP
4 PSAT is defined as IG= 1 mA.
5 Includes package
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
2
CGHV40050 Rev 2.0
www.cree.com/rf
CGHV40050 Typical Performance
Figure 1. - Small Signal Gain and Return Losses versus Frequency of the CGHV40050 in the
application circuit CGHV40050-AMP
VDD = 50 V, IDQ = 300 mA, Tcase = 25°C
Figure 2. - Gain, Output Power and Drain Efficiency vs Frequency of the CGHV40050
measured in Broadband Amplifier Circuit CGHV40050-AMP
VDD = 50 V, IDQ = 300 mA, Tcase = 25°C
70
60
50
40
30
20
10
0
42
36
30
24
18
12
6
Drain Efficiency
Output Power
Pout
Drain Efficiency
Gain
Gain
0
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
3
CGHV40050 Rev 2.0
www.cree.com/rf
CGHV40050 Typical Performance
Figure 3. - GMAX and K-Factor vs Frequency
VDD = 50V, IDQ = 300 mA, Tcase = 25°C
40
35
30
25
20
15
1.25
Gmax
K-Factor
1
0.75
0.5
0.25
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
Source and Load Impedances
D
Z Source
Z Load
G
S
Z Source
5.69+j7.82
3.21+j3.48
3.2-j1.74
Frequency (MHz)
Z Load
500
21.47+j10.28
11.72+j10.50
3.84+j7.07
5.58+j3.02
4.65-j0.74
1000
2000
3000
4000
3.23-j5.23
2.75-j10.6
Note1: VDD = 50 V, IDQ = 300 mA. In the 440193 package.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
4
CGHV40050 Rev 2.0
www.cree.com/rf
CGHV40050-AMP Application Circuit Schematic
CGHV40050-AMP Application Circuit
J3
C13
C10
C14
C9
C8
R3
C12
C11
R4
C3
J1
J2
C5
C6
C2
R2
C7
C1
R1
C4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
5
CGHV40050 Rev 2.0
www.cree.com/rf
CGHV40050-AMP Application Circuit Bill of Materials
Designator
Description
Qty
R1
R2
RES, 560Ohms, 0805, HIGH POWER SMT
RES, 3.6Ohms, 1005, HIGH POWER SMT
RES, SMT, 0805, 22 OHM
1
1
1
1
3
1
2
2
2
2
1
1
1
R3
R4
RES, SMT, 0805, 1OHM
C1, C7
C2
CAP, 56 PF +/- 5%,, 250V, 0805, ATC 600F
CAP, 24 pF +/- 5%, 250V, 0805, ATC 600F
CAP, 1.1pF, +/-0.1pF, 250V, 0805, ATC600F
CAP, 0.1 PF +/- 0.05 pF, 0805, ATC 600F
CAP, 240pF, +/-5%, 0805, ATC600F
CAP, 33000pF, 0805, 100V, X7R
C3, C4
C5, C6
C8, C11
C9, C12
C10
CAP, 10UF, 16V, TANTALUM
C13
CAP, 100UF, 80V, ELECTROLYTIC, CAN
CAP, 1UF, 0805, 100V, X7S
C14
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT
POST
J1,J2
J3
2
HEADER RT>PLZ .1CEN LK 9POS
BASEPLATE, CGH35120
1
1
1
PCB, RO4350B, 2.5”x4”x0.020”, CGHV40050F
CGHV40050-AMP Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
6
CGHV40050 Rev 2.0
www.cree.com/rf
CGHV40050 Power Dissipation De-rating Curve
Figure 4. - Transient Power Dissipation De-Rating Curve
45
40
35
30
25
20
15
10
5
Flange (CW)
Pill (CW)
Note 1
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
Human Body Model
Charge Device Model
1A (> 250 V)
II (200 < 500 V)
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
CDM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
7
CGHV40050 Rev 2.0
www.cree.com/rf
Typical S-Parameters (Small Signal, VDS = 50 V, IDQ = 300 mA, magnitude / angle)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
600 MHz
700 MHz
800 MHz
900 MHz
1.0 GHz
1.1 GHz
1.2 GHz
1.3 GHz
1.4 GHz
1.5 GHz
1.6 GHz
1.7 GHz
1.8 GHz
0.92
0.92
0.92
0.93
0.93
0.93
0.93
0.94
0.94
0.94
0.94
0.94
0.95
0.95
-161.97
-165.42
-168.02
-170.08
-171.8
13.79
11.38
9.62
8.29
7.24
6.4
79.27
74.02
69.31
64.99
60.98
57.23
53.71
50.38
47.24
44.25
41.42
38.72
36.14
33.68
0.01
0.01
-5.56
-9.73
0.44
0.46
0.49
0.52
0.55
0.58
0.61
0.63
0.65
0.67
0.69
0.71
0.73
0.74
-142.42
-143.34
-144.16
-145.04
-146.01
-147.07
-148.21
-149.4
0.01
-13.32
-16.49
-19.32
-21.83
-24.07
-26.05
-27.77
-29.25
-30.48
-31.46
-32.19
-32.66
0.01
0.009
0.009
0.009
0.008
0.008
0.007
0.007
0.007
0.006
0.006
-173.27
-174.58
-175.77
-176.86
-177.89
-178.87
-179.81
179.28
178.4
5.7
5.13
4.64
4.23
3.87
3.56
3.3
-150.62
-151.85
-153.09
-154.33
-155.54
-156.74
3.06
1.9 GHz
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
3.2 GHz
3.4 GHz
3.6 GHz
3.8 GHz
4.0 GHz
0.95
0.95
0.95
0.95
0.95
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.95
0.95
177.53
176.67
175.82
174.97
174.13
173.28
172.43
171.57
170.7
2.85
2.67
2.51
2.37
2.24
2.12
2.02
1.93
1.85
1.77
1.71
1.65
1.55
1.47
1.41
1.36
1.33
31.32
29.06
26.88
24.78
22.75
20.78
18.87
17.02
15.2
0.006
0.005
0.005
0.005
0.005
0.004
0.004
0.004
0.004
0.003
0.003
0.003
0.003
0.003
0.004
0.004
0.005
-32.85
-32.75
-32.33
-31.57
-30.43
-28.87
-26.86
-24.35
-21.31
-17.72
-13.6
0.76
0.77
0.78
0.79
0.8
-157.91
-159.06
-160.18
-161.28
-162.34
-163.39
-164.4
0.81
0.82
0.82
0.83
0.84
0.84
0.85
0.86
0.86
0.87
0.87
0.88
-165.4
-166.37
-167.32
-168.25
-169.17
-170.95
-172.69
-174.4
169.82
168.92
168.01
166.12
164.13
162
13.43
11.69
9.98
-8.98
6.62
1.31
3.33
11.88
21.35
28.89
34.35
0.06
159.72
157.25
-3.22
-6.55
-176.09
-177.76
To download the s-parameters in s2p format, go to the CGHV40050 Product Page and click on the documentation tab.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
8
CGHV40050 Rev 2.0
www.cree.com/rf
Product Dimensions CGHV40050F (Package Type — 440193)
Product Dimensions CGHV40050P (Package Type — 440206)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
9
CGHV40050 Rev 2.0
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGHV40050F
GaN HEMT
Each
CGHV40050P
CGHV40050-TB
CGHV40050-AMP
GaN HEMT
Each
Each
Each
Test board without GaN HEMT
Test board with GaN HEMT installed
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
10
CGHV40050 Rev 2.0
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Sales & Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
11
CGHV40050 Rev 2.0
www.cree.com/rf
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