CGHV96050F2 [CREE]
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT;
| 型号： | CGHV96050F2 |
| 厂家： | 
CREE, INC |
| 描述： | 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT |
| 文件： | 总13页 (文件大小：1148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGHV96050F2
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Cree’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transist
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FE
offers excellent power added efficiency in comparison to other technologies. Ga
has superior properties compared to silicon or gallium arsenide, including highe
breakdown voltage, higher saturated electron drift velocity and higher therma
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged
package for optimal electrical and thermal performance.
Typical Performance Over 8.4-9.6 GHz (TC = 25˚C)
Parameter
8.4 GHz
13.8
85
8.8 GHz
12.8
77
9.0 GHz
12.3
81
9.2 GHz
12.3
82
9.4 GHz
12.2
75
9.6 GHz
11.8
75
Units
dB
W
Linear Gain
Output Power
Power Gain
10.4
57
9.9
10.1
52
10.1
54
9.8
9.8
dB
%
Power Added Efficiency
54
48
45
Note: Measured in CGHV96050F2-AMP (838179) under 100 uS pulse width, 10% duty, Pin 39.0 dBm (7.9 W)
Features
Applications
•
•
•
•
•
•
8.4 - 9.6 GHz Operation
•
•
•
•
•
Marine Radar
80 W POUT typical
Weather Monitoring
10 dB Power Gain
Air Traffic Control
55 % Typical PAE
Maritime Vessel Traffic Control
50 Ohm Internally Matched
<0.1 dB Power Droop
Port Security
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
VDSS
Rating
100
Units
Volts
Volts
Watts
˚C
Conditions
25˚C
Drain-source Voltage
Gate-source Voltage
Power Dissipation
VGS
-10, +2
57.6 / 86.4
-65, +150
225
25˚C
PDISS
TSTG
(CW / Pulse)
Storage Temperature
Operating Junction Temperature
Maximum Drain Current
Maximum Forward Gate Current
Soldering Temperature1
Screw Torque
T
˚C
J
IDMAX
IGMAX
TS
6
Amps
mA
14.4
25˚C
245
˚C
40
in-oz
τ
Pulse Width = 100 µs, Duty Cycle =
10%, PDISS = 86.4 W
Thermal Resistance, Junction to Case
RθJC
1.40
˚C/W
Thermal Resistance, Junction to Case
Case Operating Temperature3
RθJC
TC
2.12
˚C/W
˚C
CW, 85˚C, PDISS = 57.6 W
-40, +125
Note:
1 Current limit for long term reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 See also, the Power Dissipation De-rating Curve on Page 9.
Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
Gate Quiscent Voltage
Saturated Drain Current2
VGS(TH)
VQ
-3.8
–
-3.0
-3.0
13.0
–
-2.3
–
V
V
A
V
VDS = 10 V, ID = 14.4 mA
VDS = 40 V, ID = 500 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 14.4 mA
IDS
10.5
100
–
Drain-Source Breakdown Voltage
RF Characteristics3
VBD
–
Small Signal Gain
S21
S11
10.5
–
11.8
–5.2
–
dB
dB
VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
V
DD = 40 V, IDQ = 500 mA, PIN = -20 dBm,
Input Return Loss 1
–2.1
Frequency = 8.4-9.6 GHz
Output Return Loss
Power Output3, 4
S22
POUT
PAE
–
–12.3
70
–9.0
–
dB
W
%
VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
47
32
VDD = 40 V, IDQ = 500 mA, PIN = 39 dBm
Power Added Efficiency3, 4
45
–
VDD = 40 V, IDQ = 500 mA, PIN = 39 dBm
No damage at all phase angles, VDD = 40 V,
Y
Output Mismatch Stress
Notes:
VSWR
–
–
5:1
I
DQ = 500 mA,
1 Measured on-wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV96050F2-AMP (AD-09115) under 100 µS pulse width, 10% duty
4 Fixture loss de-embedded using the following offsets. At 9.6 GHz, input and output = 0.50 dB.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
2
CGHV96050F2 Rev 3.2
CGHV96050F2 Typical Performance
Figure 1. - Small Signal Gain and Return Loss vs Frequency
of CGHV96050F2 measured in CGHV96050F2-AMP
VDS = 40 V, IDQ = 500mA
20
15
10
5
0
-5
-15
-20
-25
-30
S11typ
S22typ
S21typ
7
7.5
8
8.5
9
9.5
10
10.5
11
Frequency (GHz)
Figure 2. - Power Gain vs. Frequency and Input Power
VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%
14
12
10
8
Psat
4
Pin = 40 dBm
Pin = 39 dBm
Pin = 38 dBm
Pin = 37 dBm
Pin = 36 dBm
2
0
7.6
7.8
8.0
8.2
8.4
8.6
8.8
9.0
9.2
9.4
9.6
9.8
10.0
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
3
CGHV96050F2 Rev 3.2
CGHV96050F2 Typical Performance
Figure 3. - Output Power vs. Input Power
VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%
50
45
40
35
30
25
9.0 GHz
9.2 GHz
9.4 GHz
9.5 GHz
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
Power Input (dBm)
Figure 4. - Power Gain vs. Frequency and Input Power
VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%
15
14
13
12
11
10
9
8
6
9.0 GHz
5
9.2 GHz
9.4 GHz
9.6 GHz
4
3
2
1
0
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
Input Power(dBm)
Cree, Inc.
4600 Silicon Drive
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
4
CGHV96050F2 Rev 3.2
CGHV96050F2 Typical Performance
Figure 5. - Power Added Efficiency vs. Input Power
VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%
60
55
50
45
40
35
30
25
20
15
10
5
9.0 GHz
9.2 GHz
9.4 GHz
9.6 GHz
0
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
Input Power (dBm)
Figure 6. - Output Power vs. Time
VDD = 40 V, PIN = 39 dBm, Duty Cycle = 10%
48.70
48.60
48.50
48.40
48.30
48.20
48.10
48.00
47.90
47.80
47.70
10us
50us
100us
300us
0
50
100
150
200
250
300
350
400
450
Pulse Length (uS)
Cree, Inc.
4600 Silicon Drive
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5
CGHV96050F2 Rev 3.2
CGHV96050F2 Typical Performance
Figure 7. - Output Power vs. Input Power & Frequency
VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%
50.0
49.0
48.0
47.0
46.0
45.0
44.0
43.0
42.0
41.0
40.0
Psat
Pin = 40
Pin = 39
Pin = 38
Pin = 37
Pin = 36
7.6
7.8
8.0
8.2
8.4
8.6
8.8
9.0
9.2
9.4
9.6
9.8
10.0
Frequency (GHz)
Figure 8. - Power Added Efficiency vs. Input Power & Frequency
VDD = 40 V, PIN = 39 dBm, Duty Cycle = 10%
70
60
50
40
30
20
10
0
Psat
Pin = 40
Pin = 39
Pin = 38
Pin = 37
Pin = 36
7.6
7.8
8.0
8.2
8.4
8.6
8.8
9.0
9.2
9.4
9.6
9.8
10.0
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
6
CGHV96050F2 Rev 3.2
CGHV96050F2-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
C1
RES, 47 OHM, +/- 1%, 1/16W,0603
CAP, 0.9pF, +/- 0.05pF,200V, 0402
CAP, 1.6pF, +/- 0.1 pF,200V, 0402
CAP, 1.0pF, +/- 0.1 pF,200V, 0402
CAP, 10.0pF, +/-5%,250V, 0603,
CAP, 470PF, 5%, 100V, 0603, X
CAP,33000PF, 0805,100V, X7R
CAP 10UF 16V TANTALUM
1
1
1
2
2
2
2
1
1
2
1
1
1
1
1
4
4
C11
C2, C12
C3,C13
C4,C14
C5,C15
C6
C18
CAP, 470uF, 20%, 80V, ELECT, SMD Size K
CONN,N,FEM,W/.500 SMA FLNG
HEADER RT>PLZ .1CEN LK 9POS
CONNECTOR ; SMB, Straight, JACK,SMD
CABLE ,18 AWG, 4.2"
J1,J2
J3
J4
W1
PCB, RF35, 2.5 X 3.0 X (0.020/0.250)
TRANSISTOR, CGHV96050F2
#2 SPLIT LOCKWASHER SS
2-56 SOC HD SCREW 1/4 SS
CGHV96050F2-AMP Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
7
CGHV96050F2 Rev 3.2
CGHV96050F2-AMP Demonstration Amplifier Circuit Schematic
CGHV96050F2-AMP Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
8
CGHV96050F2 Rev 3.2
CGHV96050F2 Power Dissipation De-rating Curve
100
90
80
70
60
50
40
Note
CW
30
Pulse 100uS / 10%
20
10
0
0
20
40
60
80
100
120
140
160
180
200
220
240
Flange Temperature (C)
Note: Shaded area exceeds Maximum Case Operating Temperature (See Page 2).
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
II (200 < 500 V)
CDM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
9
CGHV96050F2 Rev 3.2
Product Dimensions CGHV96050F2 (Package Type — 440217)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
10
CGHV96050F2 Rev 3.2
Part Number System
CGHV96050F2
Package, Power Test
Power Output (W)
Upper Frequency (GHz)
Cree GaN HEMT High Voltage
Product Line
Parameter
Value
Units
Upper Frequency1
Power Output
Package
9.6
50
GHz
W
-
Flange
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
0
1
2
3
4
5
6
7
8
9
F
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
11
CGHV96050F2 Rev 3.2
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGHV96050F2
GaN HEMT
Each
CGHV96050F2-TB
GaN HEMT
Each
CGHV96050F2-AMP
Test board without GaN HEMT
Each
CGHV96050F2 Delivered in a JEDEC
Matrix tray
50 parts / tray.
Order multiple = 50pcs
CGHV96050F2-JMT
Cree, Inc.
4600 Silicon Drive
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
12
CGHV96050F2 Rev 3.2
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
13
CGHV96050F2 Rev 3.2
相关型号：
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