CMPA2735075D [CREE]
Narrow Band High Power Amplifier, 2700MHz Min, 3500MHz Max, DIE-10;
| 型号： | CMPA2735075D |
| 厂家： | 
CREE, INC |
| 描述： | Narrow Band High Power Amplifier, 2700MHz Min, 3500MHz Max, DIE-10 高功率电源 射频 微波 |
| 文件： | 总7页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPA2735075D
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA2735075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based
monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or
gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to
Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach
enabling very wide bandwidths to be achieved.
Typical Performance Over 2.7-3.5 GHz (TC = 25˚C)
Parameter
2.7 GHz
2.9 GHz
3.1 GHz
30
3.3 GHz
29
3.5 GHz
Units
dB
Small Signal Gain
Saturated Output Power, PSAT
28
67
22
48
30
85
24
59
28
94
24
61
1
101
25
103
25
W
1
Power Gain @ PSAT
dB
1
PAE @ PSAT
61
61
%
Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA.
Features
Applications
• 28 dB Small Signal Gain
• Civil and Military Pulsed Radar
Amplifiers
• 80 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.197 x 0.174 x 0.004 inches
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
VDSS
VGS
Rating
84
Units
VDC
VDC
˚C
Drain-source Voltage
Gate-source Voltage
-10, +2
-65, +150
225
Storage Temperature
TSTG
TJ
Operating Junction Temperature
Thermal Resistance, Junction to Case (packaged)1
Mounting Temperature (30 seconds)
˚C
RθJC
1.8
˚C/W
˚C
TS
320
Note1 Eutectic die attach using 80/20 AuSn solder mounted to a 40 mil thick CuW carrier.
Electrical Characteristics (Frequency = 2.7 GHz to 3.5 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current1
VGS(TH)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
27.4
100
-2.3
–
V
VDC
A
VDS = 10 V, ID = 28 mA
VDD = 28 V, IDQ = 800 mA,
Frequency = 2.9 GHz
19.6
84
–
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 28 mA
Drain-Source Breakdown Voltage
RF Characteristics2
VBD
–
V
VDD = 28 V, IDQ = 800 mA,
Frequency = 2.9 GHz
Small Signal Gain1
S21
S21
POUT
POUT
PAE
PAE
25
24
66
72
51
54
30
28
85
94
59
61
–
–
–
–
–
–
dB
dB
W
VDD = 28 V, IDQ = 800 mA,
Frequency = 3.5 GHz
Small Signal Gain2
Power Output1
VDD = 28 V, IDQ = 800 mA,
PIN ≤ 28 dBm, Frequency = 2.9 GHz
VDD = 28 V, IDQ = 800 mA,
Power Output2
W
PIN ≤ 28 dBm, Frequency = 3.5 GHz
VDD = 28 V, IDQ = 800 mA,
Frequency = 2.9 GHz
Power Added Efficiency1
Power Added Efficiency2
%
%
VDD = 28 V, IDQ = 800 mA,
Frequency = 3.5 GHz
Power Gain
GP
–
–
–
24
15
8
–
–
–
dB
dB
dB
VDD = 28 V, IDQ = 800 mA
VDD = 28 V, IDQ = 800 mA
VDD = 28 V, IDQ = 800 mA
Input Return Loss
Output Return Loss
S11
S22
No damage at all phase angles,
VDD = 28 V, IDQ = 800 mA,
POUT = 75W CW
Y
Output Mismatch Stress
VSWR
–
–
5 : 1
Notes:
1
Scaled from PCM data.
All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 1%.
2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/wireless
2
CMPA2735075D Rev 1.1
Die Dimensions (units in microns)
Overall die size 5000 x 4420 (+0/-50) microns, die thickness 100 (+/-10) microns.
All Gate and Drain pads must be wire bonded for electrical connection.
Pad Number
Function
RF-IN
Description
RF-Input pad. Matched to 50 ohm.
Pad Size (microns)
150 x 200
200 x 200
200 x 200
250 x 200
250 x 200
200 x 200
200 x 200
500 x 200
500 x 200
150 x 200
Note
3
1
2
VG1_A
VG1_B
VD1_A
VD1_B
VG2_A
VG2_B
VD2_A
VD2_B
RF-Out
Gate control for stage 1. VG ~ 2.0 - 3.5 V.
Gate control for stage 1. VG ~ 2.0 - 3.5 V.
Drain supply for stage 1. VD = 28 V.
1,2
1,2
1
3
4
5
Drain supply for stage 1. VD = 28 V.
1
6
Gate control for stage 2A. VG ~ 2.0 - 3.5 V.
Gate control for stage 2B. VG ~ 2.0 - 3.5 V.
Drain supply for stage 2A. VD = 28 V.
Drain supply for stage 2B. VD = 28 V.
RF-Output pad. Matched to 50 ohm.
1
7
1
8
1
9
1
10
3
Notes:
1
Attach bypass capacitor to pads 2-9 per application circuit.
VG1_A and VG1_B are connected internally so it would be enough to connect either one for proper operation.
The RF Input and Output pad have a ground-signal-ground with a nominal pitch of 10 mil (250 um). The RF
2
3
ground pads are 100 x 100.
Die Assembly Notes:
•
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at http://www.cree.com/products/wireless_appnotes.asp
Vacuum collet is the preferred method of pick-up.
•
•
•
•
•
•
The backside of the die is the Source (ground) contact.
Die back side gold plating is 5 microns thick minimum.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
Use the die label (XX-YY) for correct orientation.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/wireless
3
CMPA2735075D Rev 1.1
Block Diagram Showing Additional Capacitors & Output
Matching Section for Operation Over 2.7 to 3.5 GHz
C2
C4
C10
Vd
C9
C1
C3
Vg
VG1_B
VD1_B
VG2_B
VD2_B
1
2
RF_Out
RF_In
2
1
VG1_A
VD1_A
VG2_A
VD2_A
C11
C5
C7
C6
C8
C12
Designator
Description
Quantity
CAP, 120pF, +/-10%, SINGLE LAYER, 0.035”, Er 3300, 100V,
Ni/Au TERMINATION
C1,C2,C3,C4,C5,C6,C7,C8
C9,C10,C11,C12
8
CAP, 680pF, +/-10%, SINGLE LAYER, 0.070”, Er 3300, 100V,
Ni/Au TERMINATION
4
Notes:
1
The input, output and decoupling capacitors should be attached as close as possible to the
die- typical distance is 5 to 10 mils with a maximum of 15 mils.
2
The MMIC die and capacitors should be connected with 2 mil gold bond wires.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/wireless
4
CMPA2735075D Rev 1.1
Typical Performance of the CMPA2735075D
Gain and Input Return Loss
vs Frequency
Output Power and Power Added Efficiency
vs Frequency
VDD = 28 V, IDQ = 0.7 A
VDD = 28 V, IDQ = 0.7 A
70
70
60
50
40
30
40
20
0
40
S21 (dB)
PAE (%)
60
20
Output Power (dBm)
50
0
S22 (dB)
40
-20
-40
-20
S11 (dB)
S21
S11
S22
Pout
PAE
-40
30
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2.5
2.7
2.9
3.1
3.3
3.5
3.7
Frequency (GHz)
Frequency (GHz)
Associated Gain at Maximum Power
Added Efficiency vs Frequency
VDD = 28 V, IDQ = 0.7 A
Gain and Power Added Efficiency
vs Output Power
VDD = 28 V, IDQ = 0.7 A, Frequency = 3.1 GHz
30
40
35
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
25
20
15
10
5
Gain (dB)
PAE (%)
Gain
PAE
0
0
2.5
2.7
2.9
3.1
3.3
3.5
3.7
25
30
35
40
45
50
55
Frequency (GHz)
Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/wireless
5
CMPA2735075D Rev 1.1
Part Number System
CMPA2735075D
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
Cree MMIC Power Amplifier Product Line
Parameter
Value
Units
Lower Frequency
Upper Frequency
Power Output
Package
2.7
3.5
GHz
GHz
W
75
Bare Die
-
Table 1.
Note: Alpha characters used in frequency
code indicate a value greater than 9.9 GHz.
See Table 2 for value.
Character Code
Code Value
A
B
C
D
E
F
0
1
2
3
4
5
6
7
8
9
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/wireless
6
CMPA2735075D Rev 1.1
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use. No license is granted by implication or otherwise under
any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities
and are provided for information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer’s technical experts for each
application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could
result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a
nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
7
CMPA2735075D Rev 1.1
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