CXXXUT190-SXXXX-30 [CREE]
Small Chip 190 x 190 x 85 Single Wire Bond Structure; 小片190 ×190 X 85单线债券结构
| 型号： | CXXXUT190-SXXXX-30 |
| 厂家： | 
CREE, INC |
| 描述： | Small Chip 190 x 190 x 85 Single Wire Bond Structure |
| 文件： | 总6页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cree® UltraThin™ Gen III LEDs
Data Sheet
CxxxUT190-Sxxxx-30
Cree’sꢀUltraThinꢀLEDsꢀcombineꢀhighlyꢀefficientꢀInGaNꢀmaterialsꢀwithꢀCree’sꢀproprietaryꢀG•SiC®ꢀsubstrateꢀtoꢀdeliverꢀ
superiorꢀprice/performanceꢀforꢀblueꢀLEDs.ꢀTheseꢀverticallyꢀstructuredꢀLEDꢀchipsꢀareꢀsmallꢀinꢀsizeꢀandꢀrequireꢀaꢀlowꢀ
forwardꢀvoltage.ꢀCree’sꢀUT™ꢀseriesꢀchipsꢀareꢀtestedꢀforꢀconformityꢀtoꢀopticalꢀandꢀelectricalꢀspecificationsꢀandꢀtheꢀ
abilityꢀtoꢀwithstandꢀ1000ꢀVꢀESD.ꢀApplicationsꢀincludeꢀkeypadꢀbacklightingꢀwhereꢀsub-miniaturizationꢀandꢀthinnerꢀ
formꢀfactorsꢀareꢀrequired.
FEATURES
APPLICATIONS
•ꢀ SmallꢀChipꢀ–ꢀ190ꢀxꢀ190ꢀxꢀ85ꢀμmꢀ
•ꢀ MobileꢀPhoneꢀKeypads
•ꢀ UTꢀLEDꢀPerformance
•ꢀ AudioꢀProductꢀDisplayꢀLighting
•ꢀ MobileꢀApplianceꢀKeypads
•ꢀ AutomotiveꢀApplications
–ꢀ 450ꢀ&ꢀ460ꢀnmꢀ–ꢀ14ꢀmWꢀmin.
–ꢀ 470ꢀnmꢀ–ꢀ12ꢀmWꢀmin.
–ꢀ 527ꢀnmꢀ–ꢀ4.0ꢀmWꢀmin.
•ꢀ LowꢀForwardꢀVoltage
–ꢀ 2.9ꢀVꢀTypicalꢀatꢀ5ꢀmA
•ꢀ SingleꢀWireꢀBondꢀStructure
•ꢀ Classꢀ2ꢀESDꢀRating
CxxxUT190-Sxxxx-30 Chip Diagram
ꢀ
Top View
Die Cross Section
Bottom View
190ꢀxꢀ190ꢀμm
Junction
160ꢀxꢀ160ꢀμm
BottomꢀSurface
105ꢀxꢀ105ꢀμm
Anodeꢀ(+)
85-μmꢀDiameter
Cathodeꢀ(-)
80ꢀxꢀ80ꢀμm
tꢀ=ꢀ85ꢀμm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°CNotes 1&3
DCꢀForwardꢀCurrent
CxxxUT190-Sxxxx-30
30ꢀmA
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)
LEDꢀJunctionꢀTemperature
100ꢀmA
125°C
ReverseꢀVoltage
5ꢀV
OperatingꢀTemperatureꢀRange
-40°Cꢀtoꢀ+100°C
-40°Cꢀtoꢀ+100°C
1000ꢀV
StorageꢀTemperatureꢀRange
ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)ꢀNoteꢀ2
ElectrostaticꢀDischargeꢀClassificationꢀ(MIL-STD-883E)ꢀNoteꢀ2
Classꢀ2
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, If = 5 mA
Reverse Current
[I(Vr=5 V), μA]
Full Width Half Max
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
2.9
2.9
2.9
3.0
Max.
Max.
Typ.
21
C450UT190-Sxxxx-30
C460UT190-Sxxxx-30
C470UT190-Sxxxx-30
C527UT190-Sxxxx-30
2.7
2.7
2.7
2.7
3.1
3.1
3.1
3.2
2
2
2
2
21
22
35
Mechanical Specifications
Description
CxxxUT190-Sxxxx-30
Dimension
Tolerance
±ꢀ25
P-NꢀJunctionꢀAreaꢀ(μm)
ChipꢀTopꢀAreaꢀ(μm)
160ꢀxꢀ160
190ꢀxꢀ190
105ꢀxꢀ105
85
±ꢀ25
ChipꢀBottomꢀAreaꢀ(μm)
ChipꢀThicknessꢀ(μm)
±ꢀ25
±ꢀ10
AuꢀBondꢀPadꢀDiameterꢀ(μm)
AuꢀBondꢀPadꢀThicknessꢀ(μm)
BacksideꢀContactꢀMetalꢀAreaꢀ(μm)
85
-10/+15
±ꢀ0.5
1.2
80ꢀxꢀ80
±ꢀ25
Notes:
1.ꢀ Maximumꢀ ratingsꢀ areꢀ packageꢀ dependent.ꢀ Theꢀ aboveꢀ ratingsꢀ wereꢀ determinedꢀ usingꢀ aꢀ T-1ꢀ 3/4ꢀ packageꢀ (withꢀ Hysolꢀ OS4000ꢀ
epoxy)ꢀforꢀcharacterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀTheꢀforwardꢀcurrentsꢀ(DCꢀandꢀPeak)ꢀareꢀnotꢀlimitedꢀbyꢀtheꢀdieꢀ
butꢀbyꢀtheꢀeffectꢀofꢀtheꢀLEDꢀjunctionꢀtemperatureꢀonꢀtheꢀpackage.ꢀTheꢀjunctionꢀtemperatureꢀlimitꢀofꢀ125°CꢀisꢀaꢀlimitꢀofꢀtheꢀT-1ꢀ
3/4ꢀpackage;ꢀjunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀspecificꢀpackageꢀtoꢀdetermineꢀlimitations.ꢀAssemblyꢀprocessingꢀ
temperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).
2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀaccordingꢀtoꢀtheꢀHBMꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀ
energyꢀtestꢀ(RAET).ꢀTheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀminimumꢀESDꢀratingsꢀshown.ꢀTheꢀESDꢀclassificationꢀofꢀ
Classꢀ2ꢀisꢀbasedꢀonꢀsampleꢀtestingꢀaccordingꢀtoꢀMIL-STD-883E.ꢀ
3.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀ
andꢀoperatedꢀatꢀ5ꢀmAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfficiencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀ
areꢀwithinꢀtheꢀrangeꢀofꢀaverageꢀvaluesꢀexpectedꢀbyꢀmanufacturerꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀinformationꢀonly.ꢀAllꢀ
measurementsꢀwereꢀmadeꢀusingꢀlampsꢀinꢀT-1ꢀ3/4ꢀpackagesꢀ(withꢀHysolꢀOS4000ꢀepoxy).ꢀOpticalꢀcharacteristicsꢀmeasuredꢀinꢀanꢀ
integratingꢀsphereꢀusingꢀIlluminanceꢀE.
4.ꢀ Caution:ꢀ Toꢀ obtainꢀ optimumꢀ outputꢀ efficiency,ꢀ theꢀ amountꢀ ofꢀ epoxyꢀ usedꢀ shouldꢀ beꢀ characterizedꢀ basedꢀ uponꢀ theꢀ specificꢀ
application.ꢀ
Cree, Inc.
4600 Silicon Drive
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3EO Rev. A
Standard Bins for CxxxUT190-Sxxxx-30
LEDꢀchipsꢀareꢀsortedꢀtoꢀtheꢀradiant fluxꢀandꢀdominant wavelengthꢀbinsꢀshown.ꢀSortedꢀdieꢀsheetsꢀcontainꢀdieꢀfromꢀ
onlyꢀoneꢀbin.ꢀSortedꢀdieꢀkitꢀ(CxxxUT190-Sxxxx-30)ꢀordersꢀmayꢀbeꢀfilledꢀwithꢀanyꢀorꢀallꢀbinsꢀ(CxxxUT190-xxxx-30)ꢀ
containedꢀ inꢀ theꢀ kit.ꢀ Allꢀ radiantꢀ fluxꢀ valuesꢀ areꢀ measuredꢀ atꢀ Ifꢀ =ꢀ 20ꢀ mAꢀ andꢀ allꢀ dominantꢀ wavelengthꢀ valuesꢀ areꢀ
measuredꢀatꢀIfꢀ=ꢀ5ꢀmA.ꢀ
C450UT190-S1400-30
C450UT190-0317-30
C450UT190-0313-30
C450UT190-0309-30
C450UT190-0305-30
C450UT190-0318-30
C450UT190-0314-30
C450UT190-0310-30
C450UT190-0306-30
C450UT190-0319-30
C450UT190-0315-30
C450UT190-0311-30
C450UT190-0307-30
C450UT190-0320-30
C450UT190-0316-30
C450UT190-0312-30
C450UT190-0308-30
20.0ꢀmW
18.0ꢀmW
16.0ꢀmW
14.0ꢀmW
455ꢀnm
445ꢀnm
447.5ꢀnm
450ꢀnm
452.5ꢀnm
Dominant Wavelength
C460UT190-S1400-30
C460UT190-0317-30
C460UT190-0313-30
C460UT190-0309-30
C460UT190-0305-30
C460UT190-0318-30
C460UT190-0319-30
C460UT190-0315-30
C460UT190-0311-30
C460UT190-0307-30
C460UT190-0320-30
C460UT190-0316-30
C460UT190-0312-30
C460UT190-0308-30
20.0ꢀmW
18.0ꢀmW
16.0ꢀmW
14.0ꢀmW
C460UT190-0314-30
C460UT190-0310-30
C460UT190-0306-30
465ꢀnm
455ꢀnm
457.5ꢀnm
460ꢀnm
Dominant Wavelength
462.5ꢀnm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3EO Rev. A
Standard Bins for CxxxUT190-Sxxxx-30 (continued)
LEDꢀchipsꢀareꢀsortedꢀtoꢀtheꢀradiant fluxꢀandꢀdominant wavelengthꢀbinsꢀshown.ꢀSortedꢀdieꢀsheetsꢀcontainꢀdieꢀfromꢀ
onlyꢀoneꢀbin.ꢀSortedꢀdieꢀkitꢀ(CxxxUT190-Sxxxx-30)ꢀordersꢀmayꢀbeꢀfilledꢀwithꢀanyꢀorꢀallꢀbinsꢀ(CxxxUT190-xxxx-30)ꢀ
containedꢀ inꢀ theꢀ kit.ꢀ Allꢀ radiantꢀ fluxꢀ valuesꢀ areꢀ measuredꢀ atꢀ Ifꢀ =ꢀ 20ꢀ mAꢀ andꢀ allꢀ dominantꢀ wavelengthꢀ valuesꢀ areꢀ
measuredꢀatꢀIfꢀ=ꢀ5ꢀmA.ꢀ
C470UT190-S1200-30
C470UT190-0313-30
C470UT190-0309-30
C470UT190-0305-30
C470UT190-0301-30
C470UT190-0314-30
C470UT190-0310-30
C470UT190-0306-30
C470UT190-0302-30
C470UT190-0315-30
C470UT190-0311-30
C470UT190-0307-30
C470UT190-0303-30
C470UT190-0316-30
C470UT190-0312-30
C470UT190-0308-30
C470UT190-0304-30
18.0ꢀmW
16.0ꢀmW
14.0ꢀmW
12.0ꢀmW
465ꢀnm
467.5ꢀnm
470ꢀnm
472.5ꢀnm
475ꢀnm
Dominant Wavelength
C527UT190-S0400-30
C527UT190-0307-30
C527UT190-0304-30
C527UT190-0301-30
C527UT190-0308-30
C527UT190-0309-30
C527UT190-0306-30
C527UT190-0303-30
8.0ꢀmW
C527UT190-0305-30
C527UT190-0302-30
6.0ꢀmW
4.0ꢀmW
520ꢀnm
525ꢀnm
530ꢀnm
535ꢀnm
Dominant Wavelength
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3EO Rev. A
Standard Bins for CxxxUT190-Sxxxx-30
LEDꢀchipsꢀareꢀsortedꢀtoꢀtheꢀradiant fluxꢀandꢀdominant wavelengthꢀbinsꢀshown.ꢀSortedꢀdieꢀsheetsꢀcontainꢀdieꢀfromꢀ
onlyꢀoneꢀbin.ꢀSortedꢀdieꢀkitꢀ(CxxxUT190-Sxxxx-30)ꢀordersꢀmayꢀbeꢀfilledꢀwithꢀanyꢀorꢀallꢀbinsꢀ(CxxxUT190-xxxx-30)ꢀ
containedꢀ inꢀ theꢀ kit.ꢀ Allꢀ radiantꢀ fluxꢀ valuesꢀ areꢀ measuredꢀ atꢀ Ifꢀ =ꢀ 20ꢀ mAꢀ andꢀ allꢀ dominantꢀ wavelengthꢀ valuesꢀ areꢀ
measuredꢀatꢀIfꢀ=ꢀ5ꢀmA.ꢀ
Forward Current vs. Forward Voltage
Wavelength Shift vs. Forward Current
30
25
20
15
10
5
4
2
0
-2
-4
-6
-8
-10
-12
-14
0
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
4
If (mA)
Vf (V)
Relative Intensity vs. Forward Current
500%
400%
300%
200%
100%
0%
0
5
10
15
20
25
30
If (mA)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
5
CPR3EO Rev. A
Radiation Pattern
ThisꢀisꢀaꢀrepresentativeꢀradiationꢀpatternꢀforꢀtheꢀUltraThinꢀChipꢀLEDꢀproduct.ꢀActualꢀpatternsꢀwillꢀvaryꢀslightlyꢀforꢀeachꢀ
chip.
Cree, Inc.
4600 Silicon Drive
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
6
CPR3EO Rev. A
相关型号：
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