E3M0280090D [CREE]
Silicon Carbide Power MOSFET E-Series Automotive;型号: | E3M0280090D |
厂家: | CREE, INC |
描述: | Silicon Carbide Power MOSFET E-Series Automotive |
文件: | 总10页 (文件大小:734K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
E3M0280090D
Silicon Carbide Power MOSFET
E-Series Automotive
N-Channel Enhancement Mode
Features
Package
•
•
•
•
•
•
3rd generation SiC MOSFET technology
High blocking voltage with low On-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Automotive Qualified (AEC-Q101) and PPAP Capable
Benefits
•
•
•
•
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Applications
•
•
•
•
Automotive EV battery chargers
Renewable energy
High voltage DC/DC converters
Telecom Power Supplies
Marking
E3M0280090
Part Number
E3M0280090D
Package
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Parameter
Value
Unit
Test Conditions
Note
Symbol
VGS = 0 V, ID = 100 μA
Drain - Source Voltage
Gate - Source Voltage
900
-8/+18
-4/+15
11.5
V
V
V
VDSmax
VGSmax
VGSop
Note: 1
Note: 2
Fig. 19
Gate - Source Voltage (Recommended operating values)
VGS = 15 V, TC = 25˚C
VGS = 15 V, TC = 100˚C
Continuous Drain Current
A
ID
7.5
Pulsed Drain Current
22
54
A
Fig. 22
Fig. 20
ID(pulse)
Pulse width tP limited by Tjmax
Power Dissipation
W
˚C
˚C
TC=25˚C, T = 150 ˚C
PD
J
-55 to
+150
Operating Junction and Storage Temperature
Solder Temperature
T , Tstg
J
1.6mm (0.063”) from case for
10s
260
TL
1
8.8
Nm
lbf-in
Mounting Torque
M3 or 6-32 screw
Md
Note (1): When using MOSFET Body Diode VGSmax = -4V/+18V
Note (2): MOSFET can also safely operate at 0/+15 V
1
E3M0280090D Rev. - , 07-2018
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
900
1.7
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
VGS = 0 V, ID = 100 μA
2.1
1.6
1
3.5
VDS = VGS, ID = 1.2 mA
V
V
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = VGS, ID = 1.2 mA, TJ = 150ºC
VDS = 900 V, VGS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
364
μA
nA
10
VGS = 15 V, VDS = 0 V
280
385
3.6
3.1
VGS = 15 V, ID = 7.5 A
Fig. 4,
5, 6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
VGS = 15 V, ID = 7.5 A, TJ = 150ºC
VDS= 15 V, IDS= 7.5 A
gfs
S
Fig. 7
VDS= 15 V, IDS= 7.5 A, TJ = 150ºC
Ciss
Coss
Crss
Eoss
Input Capacitance
150
20
2
Fig. 17,
18
VGS = 0 V, VDS = 600 V
Output Capacitance
Reverse Transfer Capacitance
Coss Stored Energy
pF
f = 1 MHz
AC
V
= 25 mV
4.5
μJ
μJ
Fig. 16
Fig. 26,
29
Note 3
EON
Turn-On Switching Energy (Body Diode FWD)
57
VDS = 400 V, VGS = -4 V/15 V, ID = 7.5 A,
RG(ext) = 2.5Ω, L= 220 μH, TJ = 150ºC
EOFF
td(on)
tr
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
6
26
10
VDD = 400 V, VGS = -4 V/15 V
ID = 7.5 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Inductive load
Fig. 27,
29
Note 3
Rise Time
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
17.5
7.5
,
RG(int)
Qgs
Qgd
Qg
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
26
2.8
3.4
9.5
Ω
f = 1 MHz VAC = 25 mV
VDS = 400 V, VGS = -4 V/15 V
ID = 7.5 A
nC
Fig. 12
Per IEC60747-8-4 pg 21
(T = 25˚C unless otherwise specified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.8
V
V
VGS = -4 V, ISD = 4 A
Fig. 8,
9, 10
VSD
Diode Forward Voltage
4.4
VGS = -4 V, ISD = 4 A, T = 150 °C
J
IS
IS, pulse
trr
Continuous Diode Forward Current
Diode pulse Current
9.6
22
A
VGS = -4 V, TC = 25˚C
Note 1
Note 1
A
VGS = -4 V, pulse width tP limited by Tjmax
Reverse Recover time
20
ns
VGS = -4 V, ISD = 4 A, VR = 400 V
Note 1
Qrr
Irrm
Reverse Recovery Charge
47
nC
A
dif/dt = 800 A/µs, T = 150 °C
J
Peak Reverse Recovery Current
3.4
Thermal Characteristics
Symbol
RθJC
Parameter
Max.
2.3
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
°C/W
Fig. 21
RθJA
Thermal Resistance From Junction to Ambient
40
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode
2
E3M0280090D Rev. - , 07-2018
Typical Performance
20
20
18
16
14
12
10
8
VGS = 15 V
Conditions:
TJ = -55 °C
Conditions:
TJ = 25 °C
tp = < 200 µs
VGS = 15 V
18
VGS = 13 V
tp = < 200 µs
16
VGS = 13 V
14
12
10
8
VGS = 11 V
VGS = 9 V
VGS = 11 V
VGS = 9 V
6
6
VGS = 7 V
VGS = 7 V
4
4
2
2
0
0
0
2
4
6
8
10
0
2
4
6
8
10
Drain-Source Voltage, VDS (V)
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 ºC
Figure 2. Output Characteristics TJ = 25 ºC
20
18
16
14
12
10
8
2.5
2.0
1.5
1.0
0.5
0.0
Conditions:
TJ = 150 °C
tp = < 200 µs
Conditions:
IDS = 7 A
VGS = 15 V
tp < 200 µs
VGS = 15 V
VGS = 13 V
VGS = 11 V
VGS = 9 V
6
VGS = 7 V
4
2
0
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
Figure 3. Output Characteristics TJ = 150 ºC
Figure 4. Normalized On-Resistance vs. Temperature
600
550
500
450
400
350
300
250
200
150
100
50
600
500
400
300
200
100
0
Conditions:
IDS = 7 A
tp < 200 µs
Conditions:
VGS = 15 V
tp < 200 µs
VGS = 11 V
VGS = 13 V
TJ = 150 °C
TJ = -55 °C
TJ = 25 °C
VGS = 15 V
0
0
5
10
Drain-Source Current, IDS (A)
15
20
-50
-25
0
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Figure 5. On-Resistance vs. Drain Current
Figure 6. On-Resistance vs. Temperature
For Various Temperatures
For Various Gate Voltage
3
E3M0280090D Rev. - , 07-2018
Typical Performance
15
-8
-7
-6
-5
-4
-3
-2
-1
0
Conditions:
VDS = 20 V
tp < 200 µs
0
TJ = 150 °C
VGS = -4 V
-5
10
TJ = 25 °C
VGS = 0 V
TJ = -55 °C
VGS = -2 V
-10
-15
-20
5
0
Conditions:
TJ = -55°C
tp < 200 µs
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
Drain-Source Voltage VDS (V)
Gate-SourceVoltage, VGS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
VGS = -4 V
VGS = -4 V
-5
VGS = 0 V
-5
VGS = 0 V
VGS = -2 V
VGS = -2 V
-10
-15
-20
-10
-15
-20
Conditions:
TJ = 150°C
tp < 200 µs
Conditions:
TJ = 25°C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditons
GS = VDS
IDS = 1.2 mA
Conditions:
V
I
DS = 7.5 A
GS = 10 mA
DS = 400 V
TJ = 25 °C
I
12
8
V
4
0
-4
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
E3M0280090D Rev. - , 07-2018
Typical Performance
-6
-5
-4
-3
-2
-1
0
-6
-5
-4
-3
-2
-1
0
0
0
VGS = 0 V
VGS = 0 V
-5
-5
VGS = 5 V
VGS = 5 V
VGS = 10 V
VGS = 10 V
-10
-15
-20
-10
-15
-20
VGS = 15 V
VGS = 15 V
Conditions:
TJ = -55 °C
tp < 200 µs
Conditions:
TJ = 25 °C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
10
-6
-5
-4
-3
-2
-1
0
0
VGS = 0 V
8
6
4
2
0
-5
VGS = 5 V
VGS = 10 V
VGS = 15 V
-10
-15
-20
Conditions:
TJ = 150 °C
tp < 200 µs
0
100
200
300
400
500
600
700
800
900 1000
Drain to Source Voltage, VDS (V)
Drain-Source Voltage VDS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC
Figure 16. Output Capacitor Stored Energy
1000
1000
100
10
Conditions:
TJ = 25 °C
Conditions:
TJ = 25 °C
AC = 25 mV
f = 1 MHz
VAC = 25 mV
V
f = 1 MHz
Ciss
Ciss
100
10
1
Coss
Coss
Crss
Crss
1
0
50
100
Drain-Source Voltage, VDS (V)
150
200
0
100
200
300
400
500
600
700
800
900
Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 900V)
5
E3M0280090D Rev. - , 07-2018
Typical Performance
12
60
50
40
30
20
10
0
Conditions:
TJ ≤ 150 °C
Conditions:
TJ ≤ 150 °C
10
8
6
4
2
0
-55
-30
-5
20
45
70
95
120
145
-55
-30
-5
20
45
70
95
120
145
Case Temperature, TC (°C)
Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs.
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
Case Temperature
0.5
0.3
10.00
10 µs
Limited by RDS On
1
100 µs
1 ms
0.1
100 ms
1.00
0.10
0.01
0.05
0.02
100E-3
0.01
SinglePulse
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
10E-3
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
Drain-Source Voltage, VDS (V)
Figure 21. Transient Thermal Impedance
Figure 22. Safe Operating Area
(Junction - Case)
300
250
200
150
100
50
180
Conditions:
TJ = 25 °C
VDD = 600 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = EM0280090D
L = 220 μH
Conditions:
TJ = 25 °C
VDD = 400 V
RG(ext) = 2.5 Ω
160
140
120
100
80
VGS = -4V/+15 V
FWD = E3M0280090D
L = 220 μH
ETotal
ETotal
EOn
EOn
60
40
EOff
20
EOff
12
0
0
0
2
4
6
8
10
14
16
0
2
4
6
8
10
12
14
16
Drain to Source Current, IDS (A)
Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs.
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
Drain Current (VDD = 400V)
6
E3M0280090D Rev. - , 07-2018
Typical Performance
100
100
80
60
40
20
0
Conditions:
TJ = 25 °C
VDD = 400 V
Conditions:
IDS = 7.5 A
VDD = 400 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = E3M0280090D
L = 220 μH
IDS = 7.5 A
80
VGS = -4V/+15 V
FWD = E3M0280090D
L = 220 μH
ETotal
ETotal
60
40
20
0
EOn
EOn
EOff
EOff
0
5
10
15
20
25
0
25
50
75
100
125
150
17
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
Temperature
45
Conditions:
TJ = 25 °C
VDD = 400 V
IDS = 7.5 A
VGS = -4V/+15 V
FWD = E3M0280090D
L = 220 μH
40
35
30
25
20
15
10
5
td(on)
td(off)
tr
tf
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figure 28. Switching Times Definition
7
E3M0280090D Rev. - , 07-2018
Test Circuit Schematic
Figure 29. Clamped Inductive Switching Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
8
E3M0280090D Rev. - , 07-2018
Package Dimensions
Inches
Millimeters
Min
POS
Package TO-247-3
Min
.190
.090
.075
.042
.075
.075
.113
.113
.022
.819
.640
.037
.620
.516
.145
.039
.487
Max
.205
.100
.085
.052
.095
.085
.133
.123
.027
.831
.695
.049
.635
.557
.201
.075
.529
Max
5.21
2.54
2.16
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.25
16.13
14.15
5.10
1.90
13.43
A
A1
A2
b
4.83
2.29
1.91
1.07
1.91
1.91
2.87
2.87
0.55
20.80
16.25
0.95
15.75
13.10
3.68
1.00
12.38
b1
b2
b3
b4
c
D
D1
D2
E
E1
E2
E3
E4
e
.214 BSC
3
5.44 BSC
N
3
L
.780
.800
.173
.144
.236
.248
11˚
11˚
8˚
19.81
4.10
3.51
5.49
6.04
9˚
20.32
4.40
3.65
6.00
6.30
11˚
11˚
8˚
Pinout Information:
T
U
L1
ØP
Q
.161
.138
.216
.238
9˚
•ꢀ Pin 1 = Gate
•ꢀ Pin 2, 4 = Drain
•ꢀ Pin 3 = Source
S
V
W
T
U
9˚
9˚
V
2˚
2˚
W
2˚
8˚
2˚
8˚
Recommended Solder Pad Layout
TO-247-3
9
E3M0280090D Rev. - , 07-2018
Notes
•
•
•
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.
Related Links
•
•
•
LTSPICE Models: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2018 Cree, Inc. All rights reserved.
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
E3M0280090D Rev. -, 07-2018
10
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