GTRA362002FC [CREE]

Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 â 3600 MHz;

GTRA362002FC


型号：	GTRA362002FC
厂家：	CREE, INC
描述：	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 â 3600 MHz
文件：	总5页 (文件大小：233K)
下载：	下载PDF数据表文档文件

GTRA362802FC

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0 CREE

GTRA364002FC

Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 â 3600 MHz

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0 CREE

GTRFG0105

Mini size of Discrete semiconductor elements

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118 ETC

GTRFG0116

Mini size of Discrete semiconductor elements

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20 ETC

GTRFG2105

Mini size of Discrete semiconductor elements

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25 ETC

GTRFG761

Mini size of Discrete semiconductor elements

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30 ETC

GTRFG843

Mini size of Discrete semiconductor elements

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16 ETC

GTRFS004

Mini size of Discrete semiconductor elements

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21 ETC

GTRFS006

Mini size of Discrete semiconductor elements

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20 ETC

GTRFS008

Mini size of Discrete semiconductor elements

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9 ETC

GTRFS191

Mini size of Discrete semiconductor elements

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14 ETC

GTRFS192

Mini size of Discrete semiconductor elements

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11 ETC

GTRFS193

Mini size of Discrete semiconductor elements

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-

12 ETC

GTRFS194

Mini size of Discrete semiconductor elements

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-

12 ETC

GTRFS195

Mini size of Discrete semiconductor elements

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13 ETC

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