GTRA384802FC-V1-R0 [CREE]
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 â 3800 MHz;
| 型号： | GTRA384802FC-V1-R0 |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 â 3800 MHz |
| 文件： | 总5页 (文件大小：1176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance GTRA384802FC
Thermally-Enhanced High Power RF GaN on SiC HEMT
400 W, 48 V, 3600 – 3800 MHz
Advance Specification Data
Sheets describe products that are
being considered by Wolfspeed for
development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Wolfspeed about the fu-
ture availability of these products.
Description
The GTRA384802FC is a 400-watt (P ) GaN on SiC high electron mobil-
3dB
ity transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a thermally-
enhanced package with earless flange.
Features
•
•
•
GaN on SiC HEMT technology
Input and output matched
Asymmetrical Doherty design
- Main: P
- Peak: P
= 230 W Typ
= 360 W Typ
3dB
3dB
•
•
Typical Pulsed CW performance, 3800 MHz, 48 V, combined outputs,
Doherty @ P , 10 µs, 10% duty cycle
3dB
- Output power = 400 W
- Drain efficiency = 62%
- Gain = 12 dB
GTRA384802FC
Package H-37248C-4
Pb-free and RoHS compliant
Target RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)
V
= 48 V, I = 250 mA, P
= 63 W avg, V
= –6 V, ƒ = 3800 MHz, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01%
DD
DQ
OUT
GSPEAK
CCDF
Characteristic
Gain
Symbol
Min
—
Typ
13.7
44
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
—
—
%
Adjacent Channel Power Ratio
Output PAR @ 0.01% CCDF
ACPR
OPAR
—
–31
7.5
—
dBc
dB
—
—
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 01, 2019-01-23
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
Advance GTRA384802FC
2
DC Characteristics
Characteristic
Conditions
Symbol
Min
150
150
—
Typ
—
Max
—
Unit
Drain-source Breakdown Voltage (main)
(peak)
V
GS
V
GS
V
GS
V
DS
V
DS
= –8 V, I = 10 mA
V
V
V
D
(BR)DSS
(BR)DSS
= –8 V, I = 10 mA
V
—
—
D
Drain-source Leakage Current
Gate Threshold Voltage (main)
(peak)
= –8 V, V = 10 V
I
—
5
mA
V
DS
DSS
= 10 V, I = 10 mA
V
—
–3
–3
—
D
GS(th)
GS(th)
= 10 V, I = 10 mA
V
—
—
V
D
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
0
Typ
—
Max
50
Unit
Drain Operating Voltage
Gate Quiescent Voltage
V
DD
V
V
V
= 48 V, I = 250 mA
V
GS(Q)
—
–3
—
DS
D
Absolute Maximum Ratings
Parameter
Symbol
Value
125
Unit
V
Drain-source Voltage
Gate-source Voltage
Gate Current (main)
(peak)
V
DSS
V
GS
–10 to +2
25.2
V
I
mA
mA
A
G
G
D
D
I
I
I
36
Drain Current (main)
(peak)
9.5
13.5
A
Junction Temperature
Storage Temperature Range
T
225
°C
°C
J
T
–65 to +150
STG
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values
may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For
reliable continuous operation, the device should be operated within the operating voltage range (V ) specified above.
DD
Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal Resistance
R
TBD
°C/W
qJC
Ordering Information
Type and Version
GTRA384802FC V1 R0
GTRA384802FC V1 R2
Order Code
TBD
Package Description
H-37248C-4
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
TBD
H-37248C-4
Rev. 01, 2019-01-23
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Advance GTRA384802FC
3
Pinout Diagram (top view)
Main
Peak
S
Pin
D1
D2
G1
G2
S
Description
D1
D2
Drain Device 1 (Main)
Drain Device 2 (Peak)
Gate Device 1 (Main)
Gate Device 2 (Peak)
Source (flange)
H-37248-4_pd_10-10-2012
G1
G2
Lead connections for GTRA384802FC
Rev. 01, 2019-01-23
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Advance GTRA384802FC
4
Package Outline Specifications
Package H-37248C-4
(8.89
[.350])
(5.08
45° X 2.72
[.107]
[.200])
C
L
4.83±0.51
[.190±0.020]
D1
D2
9.78
[.385]
(19.43
[.765])
C
L
G1
G2
+0.38
R0.51
R.020
–0.13
+.015
–.005
3.81
[.150]
12.70
[.500]
3.78±0.25
[.149±0.010]
19.81±0.20
[.780±0.008]
1.02
[.040]
C66065-A0004-C446-01-0027 : h-37248c-4_PO_11-02-2016
C
L
SPH 1.57
[.062]
S
20.57
[.810]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994
2. Primary dimensions are mm, alternate dimensions are inches
3. All tolerances ꢀ.12ꢁ ꢂꢀ.ꢀꢀ5ꢃ
4. Pins: D1, D2 – drain, G1, G2 – gate, S – source (flange)
5. Lead thickness: ꢀ.13 ꢀ.ꢀ5 ꢂꢀ.ꢀꢀ5 ꢀ.ꢀꢀ2ꢃ
6. Gold plating thickness: 1.14 ꢀ.3ꢄ micron ꢂ45 15 microinchꢃ
Rev. 01, 2019-01-23
4600 Silicon Drive
|
Durham, NC 27703 | www.wolfspeed.com
Advance GTRA384802FC
5
Revision History
Revision
Date
Data Sheet Type
Page
Subjects (major changes since last revision)
01
2019-01-23
Advance
All
Data Sheet reflects advance specification for product development
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © ꢀꢁ1ꢂ Cree, Inc. All rights reserved. The informꢃtion in this document is subject to chꢃnge without notice. Wolfspeed™ ꢃnd the Wolfspeed logo ꢃre trꢃdemꢃrks of Cree, Inc.
www.wolfspeed.com
Rev. 01, 2019-01-23
相关型号：
GTRA384802FC-V1-R2
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 â 3800 MHz
CREE
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