GTVA263202FC [CREE]
Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 â 2690 MHz;
| 型号： | GTVA263202FC |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 â 2690 MHz |
| 文件： | 总8页 (文件大小：458K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GTVA263202FC
Thermally-Enhanced High Power RF GaN on SiC HEMT
340 W, 48 V, 2620 – 2690 MHz
Description
TheGTVA263202FCisa340-watt(P )GaNonSiChighelectronmobility
3dB
transistor (HEMT) for use in multi-standard cellular power amplifier
applications.It features input matching, high efficiency, and a thermally-
enhanced surface-mount package with earless flange.
GTVA263202FC
Package H-37248-4
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA,
ƒ = 2690 MHz 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
Features
•ꢀ GaN on SiC HEMT technology
•ꢀ Input matched
32
28
24
20
16
12
8
80
60
40
20
0
•ꢀ Typical pulsed CW performance, 2690 MHz, 48 V,
Efficiency
Gain
combined outputs
- Output power at P
- Drain efficiency = 70%
- Gain = 16 dB
= 340 W
3dB
•ꢀ Capable of handling 10:1 VSWR @48 V, 80 W
(CW) output power
-20
-40
-60
-80
•ꢀ Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
PAR @ 0.01% CCDF
4
•ꢀ Low thermal resistance
0
gtva263202fc_g1
•ꢀ Pb-free and RoHS compliant
29
33
37
41
45
49
53
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)
= 48 V, I = 200 mA (per side), P = 80 W avg, ƒ = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/
V
DD
DQ
OUT
average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
16
Typ
17
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
34
40
—
%
Adjancent Channel Power Ratio
ACPR
—
–29
–26.5
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 04, 2018-05-08
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
2
GTVA263202FC
DC Characteristics
Characteristic
Conditions
Symbol
Min
150
—
Typ
—
Max
—
Unit
V
Drain-source Breakdown Voltage
Drain-source Leakage Current
Gate Threshold Voltage
V
GS
= –8 V, I = 21 mA
V
(BR)DSS
D
V
GS
= –8 V, V = 10 V
I
DSS
—
5
mA
V
DS
V
= 10 V, I = 21 mA
V
GS(th)
–3.8
–3.0
–2.3
DS
D
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
0
Typ
—
Max
50
Unit
V
Drain Operating Voltage
Gate Quiescent Voltage
V
DD
V
= 50 V, I = 200 mA
V
GS(Q)
—
–2.8
—
V
DS
D
Absolute Maximum Ratings
Parameter
Symbol
Value
125
Unit
V
Drain-source Voltage
Gate-source Voltage
Gate Current
V
DSS
V
GS
–10 to +2
20
V
I
mA
A
G
Drain Current
I
7.5
D
Junction Temperature
Storage Temperature Range
T
225
°C
°C
J
T
–65 to +150
STG
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated
within the operating voltage range (V ) specified above.
DD
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance
R
q
0.5
°C/W
JC
(T
CASE
= 70 °C, 80 W (CW))
Ordering Information
Type and Version
GTVA263202FC V1 R0
GTVA263202FC V1 R2
Order Code
Package Description
Shipping
GTVA263202FC-V1-R0
GTVA263202FC-V1-R2
H-37248-4, earless flange
H-37248-4, earless flange
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Rev. 04, 2018-05-08
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
3
GTVA263202FC
Typical Performance (data taken in a production test fixture)
Single-carrier WCDMA Broadband
Performance
VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA,
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA,
ƒ = 2690 MHz, 3GPP WCDMA signal,
PAR = 10 dB, BW = 3.84 MHz
P
OUT = 49.03 dBm, 3GPP WCDMA signal,
PAR = 10 dB
19
18
17
16
15
55
50
45
40
35
-15
-25
-35
-45
-55
-65
-75
60
50
40
30
20
10
0
Gain
Efficiency
ACPU
ACPL
Eff
gtva263202fc_g2
gtva263202fc_g3
29
33
37
41
45
49
53
2550
2600
2650
2700
2750
Average Output Power (dBm)
Frequency (MHz)
Single-carrier WCDMA Broadband
Performance
VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA,
POUT = 49.03 dBm, 3GPP WCDMA signal,
PAR = 10 dB
CW Pulse Performance
at Various VDD
IDQ(M) = 200mA, IDQ(PK) = 200mA, ƒ = 2690 MHz
20
19
18
17
16
15
14
13
12
90
-10
-15
-20
-25
-30
-35
-10
-15
-20
-25
-30
-35
Gain
80
Return Loss
70
60
50
V
V
V
DD = 44 V
DD = 48 V
DD = 52 V
40
30
20
10
0
ACP Up
Efficiency
gtva263202fc_g6
gtva263202fc_g4
36 38 40 42 44 46 48 50 52 54 56 58
Output Power (dBm)
2550
2600
2650
2700
2750
Frequency (MHz)
Rev. 04, 2018-05-08
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
4
GTVA263202FC
Typical Performance (cont.)
Small Signal CW
Gain & Input Return Loss
VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA
22
-4
Gain
20
-8
18
16
14
-12
-16
-20
-24
-28
IRL
12
10
gtva263202fc_g7
2500 2550 2600 2650 2700 2750 2800
Frequency (MHz)
Load Pull Performance
Load Pull Performance (per side) – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, I
= 200 mA
DQ
P
3dB
Max Output Power
Max PAE
Zs
[W]
Zl
[W]
Zl
[W]
Freq
[MHz]
Gain
[dB]
P
P
Gain
[dB]
P
P
OUT
PAE
[%]
PAE
[%]
OUT
OUT
OUT
[dBm]
53.75
53.77
53.75
[W]
237
238
237
[dBm]
51.13
52.39
52.02
[W]
130
173
159
2620
2655
2690
8.5 – j7
8.9 – j8.5
9.7 – j9.7
2.45 – j3.5
2.96 – j3.6
3.0 – j3.86
14.95
14.67
14.5
65.9
67.7
68.2
2.0 – j1.1
16.36
15.88
15.84
77.3
77.2
77.6
2.43 – j1.8
2.17 – j1.9
Rev. 04, 2018-05-08
4600 Silicon Drive
|
Durham, NC 27703 | www.wolfspeed.com
5
GTVA263202FC
Reference Circuit, 2620 - 2690 MHz
RO4350, 20 MIL
(61)
C207
VDD
C102
C202
C103
C201
C206
VDD
C101
L1
GTVA263202FC_
OUT_04
R101
C203
C104
C105
C204
RF_IN
RF_OUT
C109
C205
R102
VDD
L2
RO4350, 20 MIL
C106
C108
VDD
C107
C210
C209
C208
C211
GTVA263202FC_IN_04
G t va26 320 2f c_C D_05 - 18 - 20 18
Reference circuit assembly diagram (not to scale)
Rev. 04, 2018-05-08
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
6
GTVA263202FC
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
GTVA263202FC V1
Test Fixture Part No.
PCB
LTN/GTVA263202FC V1
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2620 - 2690 MHz
Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF
Components Information
Component
Input
Description
Manufacturer
P/N
C101, C104, C106, C109
C102, C107
C103, C108
C105
Capacitor, 10 pF
Capacitor, 1 µF
Capacitor, 10 µF
Capacitor, 1 pF
Inductor, 12 nH
Resistor, 5.6 ohms
ATC
ATC800A100JT250T
C4532X7R2A105M230KA
EEE-HB1H100AP
TDK Corporation
Panasonic Electronic Components
ATC
ATC800A1R0CT250T
0908SQ-12NGLB
L1, L2
Coilcraft
R101, R102
Output
Panasonic Electronic Components
ERJ-3GEYJ5R6V
C201, C209
C202, C210
C203, C205, C206, C208
C204
Capacitor, 1 µF
Capacitor, 220 µF
Capacitor, 10 pF
Capacitor, 1.4 pF
Capacitor, 10 µF
TDK Corporation
C4532X7R2A105M230KA
ECA-2AHG221
Panasonic Electronic Components
ATC
ATC800A100JT250T
ATC800A1R4CT250T
C5750X7S2A106M230KB
ATC
C207, C211
TDK Corporation
Pinout Diagram (top view)
S
Pin
D1
D2
G1
G2
S
Description
D1
D2
G2
Drain device 1
Drain device 2
Gate device 1
Gate device 2
Source (flange)
H-37248-4_pd_10-10-2012
G1
Rev. 04, 2018-05-08
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
7
GTVA263202FC
Package Outline Specifications
Package H-37248-4
(8.89
[.350])
(5.08
[.200])
2X 45° X 2.72
[45° X .107]
C
L
+0.13
-0.38
4X R0.76
2X 4.83±0.51
[.190±0.020]
D1
D2
+0.005
-0.015
R.030
[
]
FLANGE 9.78
[.385]
LID 9.40
[.370]
19.43±0.51
[.765±0.020]
C
L
G1
G2
4X 3.81
[.150]
2X 12.70
[.500]
SPH 1.57
[.062]
19.81±0.20
[.780±0.008]
1.02
[.040]
H-37248-4_po_02_01-09-2013
3.76±0.25
[.148±0.010]
C
L
20.57
[.810]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [.005] unless specified otherwise.
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.
5. Lead thickness: 0.10 + 0.076/–0.025 mm [0.004+0.003/–0.001 inch].
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].
Rev. 04, 2018-05-08
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
8
GTVA263202FC
Revision History
Revision
Date
Data Sheet
Advance
Page
All
Subjects (major changes since last revision)
01
02
03
2016-01-14
2016-08-30
2017-04-06
Data Sheet reflects advance specification for product development
Data Sheet reflects released product specification
Production
Production
All
1
2
Remove "Integrated ESD protection" from Features
Restructure tables for clarity.
04
2018-05-08
Production
All
Converted to Wolfspeed Data Sheet
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © ꢀꢁ1ꢂ Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
www.wolfspeed.com
Rev. 04, 2018-05-08
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