PTFB181702FC [CREE]

Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 â 1880 MHz;


型号：	PTFB181702FC
厂家：	CREE, INC
描述：	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 â 1880 MHz
文件：	总8页 (文件大小：554K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PTFB181702FC

Thermally-Enhanced High Power RF LDMOS FET

170 W, 28 V, 1805 – 1880 MHz

Description

The PTFB181702FC is a 170-watt LDMOS FET intended for use

in multi-standard cellular power ampliﬁer applications. Features

include input and output matching, high gain and thermally-enhanced

package with earless ﬂanges. Manufactured with Wolfspeed's ad-

vanced LDMOS process, this device provides excellent thermal

performance and superior reliability.

PTFB181702FC

Package H-37248-4

Features

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 1.3 A,

3GPP WCDMA signal, PAR = 8 dB,

10 MHz carrier spacing, BW 3.84 MHz

•ꢀ ꢀBroadbandꢀinternal matching

•ꢀ TypicalꢀCWꢀperformance,ꢀ1842ꢀMHz,ꢀ28ꢀV

- Output power at P

= 180 W

1dB

- Efﬁciency = 58%

_{- Ga}n_{in = 18.5 dB}

•ꢀꢀ Capableꢀofꢀhandlingꢀ10:1ꢀVSWRꢀ@28ꢀV,ꢀ170ꢀWꢀ

(CW) output power

Gain

•ꢀ IntegratedꢀESDꢀprotection

•ꢀ Lowꢀthermalꢀresistance

•ꢀ Pb-freeꢀandꢀRoHSꢀcompliant

1805 MHz

1842.5 MHz

1880 MHz

_{34 36}t_{38 40 42 44 46 48 50 52}

Efficiency

b181702fc-gc

Average Output Power (dBm)

RF Characteristics

Two-carrier WCDMA Speciﬁcations (tested in Wolfspeed test ﬁxture)

ꢀ=ꢀ28ꢀV,ꢀI = 1300 mA, P = 30 W avg, ƒ ꢀ=ꢀ1870ꢀMHz,ꢀƒ ꢀ=ꢀ1880ꢀMHz,ꢀ3GPPꢀsignal,ꢀchannelꢀbandwidthꢀ=ꢀ3.84ꢀMHz,ꢀ

OUT

peak/average = 8 dB @ 0.01% CCDF

Characteristic

Linear Gain

Symbol

Min

Typ

Max

—

Unit

Drain Efﬁciency

h_D

—

IntermodulationꢀDistortionꢀꢀ

ꢀ

IMDꢀ

—ꢀ

–35ꢀ

–33ꢀ

dBc

Rev. 04, 2018-08-20

4600 Silicon Drive

Durham, NC 27703

www.wolfspeed.com

PTFB181702FC

DC Characteristics (each side)

Characteristic

Conditions

Symbol

Min

65ꢀ

—

Typ

—ꢀ

—

Max

—ꢀ

Unit

Drain-SourceꢀBreakdownꢀVoltageꢀ

DrainꢀLeakageꢀCurrentꢀ

ꢀ=ꢀ0ꢀV,ꢀI ꢀ=ꢀ10ꢀmAꢀ

ꢀ

BR)DSS

ꢀ=ꢀ28ꢀV,ꢀV ꢀ=ꢀ0ꢀVꢀ

µA

DSS

ꢀ

ꢀ=ꢀ63ꢀV,ꢀV ꢀ=ꢀ0ꢀVꢀ

—

On-StateꢀResistanceꢀꢀꢀ

OperatingꢀGateꢀVoltageꢀ

GateꢀLeakageꢀCurrentꢀ

V ꢀ=ꢀ10ꢀV,ꢀV ꢀ=ꢀ0.1ꢀVꢀ

—

0.11

3.0ꢀ

—

DS(on)

ꢀ=ꢀ28ꢀV,ꢀI

= 650ꢀmAꢀ

V ꢀ

2.5ꢀ

—

3.5ꢀ

V ꢀ=ꢀ10ꢀV,ꢀV ꢀ=ꢀ0ꢀVꢀ

GSS

µA

Maximum Ratings

design

Parameter

Symbol

Value

Unit

Drain-SourceꢀVoltageꢀ ꢀ

Gate-SourceꢀVoltageꢀ ꢀ

Junction Temperature

StorageꢀTemperatureꢀRangeꢀ

ꢀ

DSS

ꢀ

65ꢀ

–6ꢀtoꢀ+10ꢀ

200

ꢀ

°C

ꢀ

STG

ꢀ

–40ꢀtoꢀ+150ꢀ

0.27

ꢀ

°C

ThermalꢀResistanceꢀ(T

ꢀ=ꢀ70°C,ꢀ170ꢀWꢀCW)ꢀ

qJC

°C/W

CASE

Ordering Information

Type and Version

Order Code

recommended

Package Description

H-37248-4,ꢀearlessꢀﬂangeꢀꢀ

H-37248-4,ꢀearlessꢀﬂangeꢀ

Shipping

PTFB181702FCꢀV1ꢀR0ꢀ

PTFB181702FC-V1-R0ꢀ

Tapeꢀ&ꢀReel,ꢀ50ꢀpcs

Tapeꢀ&ꢀReel,ꢀ250ꢀpcs

PTFB181702FCꢀV1ꢀR250ꢀ

not

PTFB181702FC-V1-R250ꢀ

4600 Silicon Drive

| Durham, NC 27703 | www.wolfspeed.com

Rev. 04, 2018-08-20

PTFB181702FC

Typical Performance (data taken in a production test ﬁxture)

Two-tone Intermodulation Distortion

vs. Output Power

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 1.3 A,

3GPP WCDMA signal, PAR = 8 dB,

10 MHz carrier spacing, BW 3.84 MHz

V_DD= 28 V, I_DQ= 1.3 A,

₁= 1880 MHz, ₂= 1879 MHz

-20

-30

-40

-50

-60

-70

-80

1880 Lower

1880 Upper

1842.5 Lower

1842.5 Upper

1805 Lower

1805 Upper

-15

-20

-25

-30

-35

-40

-45

-50

-55

IM3

IM5

IM7

b181702fc-g1

b181702fc-g5

34 36 38 40 42 44 46 48 50 52

Output Power (dBm)

Output Power, PEP (dBm)

Single-carrier Broadband Performance

V_DD= 28 V, I_DQ= 1.3 A, P_OUT= 80 W,

3GPP WCDMA signal, PAR = 10 dB

V_DD= 28 V, I_DQ= 1.3 A, P_OUT= 80 W,

_{3GPP WCDM}e_{A signal, PAR = 10 dB}

-4

-10

-15

-20

-25

-30

-35

-40

-6

-8

Return Loss

Gain

-10

-12

-14

-16

ACPR

Efficiency

b181702fc-g2

b181702fc-g3

1690 1730 1770 1810 1850 1890 1930 1970

Frequency (MHz)

Rev. 04, 2018-08-20

4600 Silicon Drive

| Durham, NC 27703 | www.wolfspeed.com

PTFB181702FC

Typical Performance (cont.)

Gain vs. Output Power

V_DD= 28 V, = 1880 MHz

Gain & Efficiency vs. Output Power

V_DD= 28 V, I_DQ= 1.3 A, ƒ = 1880 MHz

20.5

20.0

19.5

19.0

18.5

18.0

17.5

I_DQ= 1.6 A

I_DQ= 1.3 A

Gain

I_DQ= 1.0 A

design

-10 °C

+25 °C

+85 °C

b181702fc-g6

b181702fc-g4

Output Power (dBm)

Broadband Circuit Impedance

Frequency

MHz

Z Source W

Z Load W

Z Source

Z Load

recommended

ꢀ

1805ꢀ

1825ꢀ

1845ꢀ

1865ꢀ

1880ꢀ

2.99ꢀ

–6.14ꢀ

–6.08ꢀ

–6.03ꢀ

–5.97ꢀ

–5.94ꢀ

1.87ꢀ

1.52ꢀ

1.35ꢀ

1.25ꢀ

1.20ꢀ

–4.46

–4.50

–4.34

–4.19

–4.08

not

3.00ꢀ

4600 Silicon Drive

Durham, NC 27703 | www.wolfspeed.com

Rev. 04, 2018-08-20

PTFB181702FC

Reference Circuit

VDD

RO4350, .020

(60)

RO4350, .020

(60)

C801

R802

R804

C804

R803

C802

R801

C205

C207 C206

C803

VDD

VG1

C107

L102

R102

C203

C102

C201

C105

C104

C204

RF_OUT

RF_IN

C103

C211

C202

C101

C106

VG2

L101

R101

VDD

C210

C209

C208

PTFB181702F_OUT_01

PTFB181702F_IN_02

1 8 1 7 0 2 f c _ C D _ 1 0 - 1 8 - 2 0 1 2

Reference circuit assembly diagram (not to scale)*

Rev. 04, 2018-08-20

4600 Silicon Drive

| Durham, NC 27703 | www.wolfspeed.com

PTFB181702FC

Reference Circuit (cont.)

Reference Circuit Assembly

DUT

PTFB181702FC

LTN/PTFB181702FC

Rogersꢀ4350,ꢀ0.508 mmꢀ[0.020”]ꢀthick,ꢀ2ꢀoz.ꢀcopper,ꢀε = 3.66

Test Fixture Part No.

PCBꢀ

Find Gerber ﬁles for this test ﬁxture on the Wolfspeed Web site at http://www.wolfspeed.com/RF

Components Information

Component

Input

Description

Suggested Supplier

P/N

C101, C102

C103, C104

C105ꢀ

Capacitor, 10 µF

Digi-Key

ATC

490-4393-2-ND

Capacitor, 18 pF

ATC800A180JT250XT

ATC800A1R5BT250XT

Capacitor,ꢀ1.5ꢀpFꢀ

EMIꢀSuppressionꢀCapacitorꢀ

Capacitor, 10 µF

ATCꢀ

design

C106,ꢀC107ꢀ

C801, C804

C802

Digi-Keyꢀ

Digi-Key

NFM18PS105R0J3D-ND

587-1818-2-ND

PCC1772CT-ND

490-4736-2-ND

0908SQ-27NGLB

P10GTR-ND

Chip capacitor, 1000 pF

Capacitor, 1 µF

Digi-Key

C803

L101,ꢀL102ꢀ

R101,ꢀR102,ꢀR803ꢀ

R801ꢀ

Inductor,ꢀ27.3ꢀnHꢀ

Resistor,ꢀ10ꢀohmꢀ

Resistor,ꢀ100ꢀohmꢀ

Resistor,ꢀ1300ꢀohmꢀ

Resistor,ꢀ1200ꢀohmꢀ

Potentiometer, 2k W

Transistor

Coilcraftꢀ

Digi-Keyꢀ

Digi-Key

P100GTR-ND

R802ꢀ

P1.3KGTR-ND

P1.2KGTR-ND

3224W-202ECT-ND

BCP56-ND

R804ꢀ

S3ꢀ

ꢀVoltageꢀRegulatorꢀꢀ

LM7805

recommende^Dd^igi-Keyꢀ

Output

C201,ꢀC211ꢀ

Chipꢀcapacitor,ꢀ1.2ꢀpFꢀ

Chip capacitor, 18 pF

Capacitor,ꢀ220ꢀμFꢀ

Capacitor, 10 µF

ATCꢀ

ATC800A1R2BT250XT

ATC800A180JT250XT

PCE4444TR-ND

not

C202, C203, C204

C205,ꢀC208ꢀ

ATC

Digi-Keyꢀ

Digi-Key

C206, C207, C209, C210

587-1818-2-ND

Pinout Diagram (top view)

Description

Drain Device 1

Drain Device 2

Gate Device 1

Gate Device 2

Source (ﬂange)

H-37248-4_pd_10-10-2012

Lead connections for PTFB181702FC

4600 Silicon Drive

| Durham, NC 27703 | www.wolfspeed.com

Rev. 04, 2018-08-20

PTFB181702FC

Package Outline Speciﬁcations

Package H-37248-4

(8.89

[.350])

(5.08

[.200])

2X 45° X 2.72

[45° X .107]

+0.13

-0.38

4X R0.76

2X 4.83±0.51

[.190±0.020]

+0.005

-0.015

R.030

[

]

FLANGE 9.78

[.385]

LID 9.40

[.370]

19.43±0.51

[.765±0.020]

4X 3.81

[.150]

2X 12.70

[.500]

SPH 1.57

[.062]

19.81±0.20

[.780±0.008]

1.02

[.040]

H-37248-4_po_02_01-09-2013

0.0381 [.0015]

-A-

3.76±0.25

[.148±0.010]

20.57

[.810]

Diagram Notes—unless otherwise speciﬁed:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances 0.127 [.005] unless speciﬁed otherwise.

4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.

5. Lead thickness: 0.10 + 0.076/–0.025 mm [0.004+0.003/–0.001 inch].

6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].

Rev. 04, 2018-08-20

4600 Silicon Drive

| Durham, NC 27703 | www.wolfspeed.com

PTFB181702FC

Revision History

Revision

Date

Data Sheet Type

Advance

Page

All

Subjects (major changes since last revision)

Data Sheet reﬂects advance speciﬁcation for product development

Data sheet reﬂects released product speciﬁcations

UpdatedꢀorderingꢀcodeꢀtoꢀR0,ꢀrevisedꢀpackageꢀoutline-minorꢀchanges

Not recommended for new design

2012-05-29

2012-10-15

2016-06-10

2018-02-21

2018-08-20

Advance

All

02.1

Production

2, 7

All

Converted to Wolfspeed data sheet

design

For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.wolfspeed.com/RF

Sales Contact

RFSales@wolfspeed.com

recommended

RF Product Marketing Contact

RFMarketing@wolfspeed.com

not

919.407.7816

Notes

Disclaimer

Speciﬁcations are subject to change without notice. Cree, Inc. believes the information contained within this data sheet

to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights

of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-

ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for

information purposes only. These values can and do vary in diﬀerent applications and actual performance can vary over

time. All operating parameters should be validated by customer’s technical experts for each application. Cree products

are not designed, intended or authorized for use as components in applications intended for surgical implant into the

body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or

death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

www.wolfspeed.com

Rev. 04, 2018-08-20

PTFB181702FC [CREE]

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