WAS300M12BM2 [CREE]
1.2kV, 4.2 mohm All-Silicon Carbide THB-80 Half-Bridge Module;
| 型号： | WAS300M12BM2 |
| 厂家： | 
CREE, INC |
| 描述： | 1.2kV, 4.2 mohm All-Silicon Carbide THB-80 Half-Bridge Module |
| 文件： | 总9页 (文件大小：1357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDS
1.2 kV
12 mJ
4.2 mΩ
WAS300M12BM2
1.2kV, 4.2 mΩ All-Silicon Carbide
THB-80 Half-Bridge Module
C2M™ MOSFET and Z-Rec® Diode
Esw, Total @ 300A
RDS(on)
Features
Package
62mm x 106mm x 30mm
•ꢀ HighꢀTemperature,ꢀHumidity,ꢀandꢀBiasꢀOperation
•ꢀ UltraꢀLowꢀLoss
•ꢀ High-FrequencyꢀOperation
•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrentꢀfromꢀDiode
•ꢀ ZeroꢀTurn-offꢀTailꢀCurrentꢀfromꢀMOSFET
•ꢀ Normally-off,ꢀFail-safeꢀDeviceꢀOperation
•ꢀ EaseꢀofꢀParalleling
•ꢀ CopperꢀBaseplateꢀandꢀAluminumꢀNitrideꢀInsulator
ꢀꢀꢀꢀꢀ
System Benefits
•ꢀ EnablesꢀCompact,ꢀLightweight,ꢀEfficientꢀSystemsꢀ
•ꢀ HarshꢀOutdoorꢀEnvironmentꢀInstallation
•ꢀ MitigatesꢀOver-voltageꢀProtection
•ꢀ ReducedꢀThermalꢀRequirements
•ꢀ ReducedꢀSystemꢀCost
Applications
•ꢀ SolarꢀandꢀWindꢀInverters
•ꢀ AuxiliaryꢀConverters
•ꢀ Traction
Part Number
Package
Marking
WAS300M12BM2
ꢀ62mmꢀModuleꢀ
WAS300M12BM2
•ꢀ UPSꢀandꢀSMPS
•ꢀ MotorꢀDrivesꢀ
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Drainꢀ-ꢀSourceꢀVoltage
Value
Unit
Test Conditions
Notes
VDSmax
VGSmax
VGSop
1.2
kV
V
Gateꢀ-ꢀSourceꢀVoltage
Gateꢀ-ꢀSourceꢀVoltage
-10/+25
AbsoluteꢀMaximumꢀvalues
-5/+20
423
V
RecommendedꢀOperationalꢀValues
VGSꢀ=ꢀ20ꢀV,ꢀTCꢀ=ꢀ25ꢀ˚C
ID
ContinuousꢀDrainꢀCurrent
A
Fig.ꢀ26
Fig.ꢀ29
293
VGSꢀ=ꢀ20ꢀV,ꢀTCꢀ=ꢀ90ꢀ˚C
ID(pulse)
TJmax
PulsedꢀDrainꢀCurrent
JunctionꢀTemperature
1500
150
A
PulseꢀwidthꢀtPꢀlimitedꢀbyꢀTjmax
˚C
TCꢀ,TSTG
CaseꢀandꢀStorageꢀTemperatureꢀRange
CaseꢀIsolationꢀVoltageꢀ
-40ꢀtoꢀ+125
˚C
Visol
5.0
kV
AC,ꢀ50ꢀHzꢀ,ꢀ1ꢀmin
LStray
PD
StrayꢀInductance
PowerꢀDissipation
15
nH
W
Measuredꢀbetweenꢀterminalsꢀ2ꢀandꢀ3
TCꢀ=ꢀ25ꢀ˚C,ꢀTJꢀ=ꢀ150ꢀ˚C
1668
Fig.ꢀ25
Subject to change without notice.
www.wolfspeed.com
1
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
VDSS
Parameter
Drainꢀ-ꢀSourceꢀBlockingꢀVoltage
GateꢀThresholdꢀVoltage
Min.
1.2
Typ.
Max. Unit
Test Conditions
VGSꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ2ꢀmA
Note
kV
V
ꢀ
VGS(th)
2.0
2.5
600
1500
1
VDSꢀ=ꢀVGS, IDꢀ=ꢀ15ꢀmA
Figꢀ7
2000
VDSꢀ=ꢀ1.2ꢀkV,ꢀVGSꢀ=ꢀ0V
IDSS
IGSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
Gate-SourceꢀLeakageꢀCurrent
μA
VDSꢀ=ꢀ1.2ꢀkV,VGSꢀ=ꢀ0V,ꢀTJꢀ=ꢀ150ꢀ˚C
VGSꢀ=ꢀ20ꢀV,ꢀVDSꢀ=ꢀ0V
100
5.3
nA
4.2
VGSꢀ=ꢀ20ꢀV,ꢀIDSꢀ=ꢀ300ꢀA
Fig.ꢀ4,ꢀ
5,ꢀ6
RDS(on)
OnꢀStateꢀResistance
mΩ
VGSꢀ=ꢀ20ꢀV,ꢀIDSꢀ=ꢀ300ꢀA,ꢀ
TJꢀ=ꢀ150ꢀ˚C
7.7
ꢀ
VDSꢀ=ꢀ20ꢀV, IDSꢀ=ꢀ300ꢀA
156
144
19.3
gfs
Transconductance
S
Fig.ꢀ8
ꢀ
VDSꢀ=ꢀ20ꢀV, IDꢀ=ꢀ300ꢀA,ꢀTJꢀ=ꢀ150ꢀ˚C
Ciss
Coss
Crss
Eon
InputꢀCapacitance
fꢀ=ꢀ200ꢀkHz,ꢀ
VDSꢀ=ꢀ600ꢀV,ꢀꢀ
Fig.ꢀ
16,ꢀ17
OutputꢀCapacitance
2.57
nF
VACꢀ=ꢀ25ꢀmV
ReverseꢀTransferꢀCapacitance
0.12
ꢀꢀꢀꢀꢀꢀꢀꢀ
Turn-OnꢀSwitchingꢀEnergy
VDDꢀ=ꢀ600ꢀV,ꢀVGSꢀ=ꢀ-5V/+20V
IDꢀ=ꢀ300ꢀA,ꢀRG(ext)ꢀ=ꢀ2.5ꢀΩ
Loadꢀ=ꢀ77ꢀμH,ꢀTJꢀ=ꢀ150ꢀ˚C
Note:ꢀIECꢀ60747-8-4ꢀDefinitions
5.8
6.1
mJ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
Fig.ꢀ22
ꢀꢀꢀꢀꢀꢀꢀꢀ
Turn-OffꢀSwitchingꢀEnergy
EOff
mJ
Ω
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
InternalꢀGateꢀResistance
Gate-SourceꢀCharge
Gate-DrainꢀCharge
RGꢀ(int)
QGS
3.0
166
475
1025
76
fꢀ=ꢀ200ꢀkHz,ꢀVACꢀ=ꢀ25ꢀmV
ꢀ
DD= 800ꢀV,ꢀVGSꢀ=ꢀ-5V/+20V,
ID= 300ꢀA,ꢀPerꢀJEDEC24ꢀpgꢀ27
V
nC
Fig.ꢀ15
Fig.ꢀ23
QGD
QG
ꢀ
TotalꢀGateꢀCharge
td(on)
Turn-onꢀdelayꢀtimeꢀ
ns
VDDꢀ=ꢀ600V,ꢀꢀVGSꢀ=ꢀ-5/+20V,
IDꢀ=ꢀ300ꢀA,ꢀRG(ext)ꢀ=ꢀ2.5ꢀΩ,ꢀ
TimingꢀrelativeꢀtoꢀVDS
Note:ꢀIECꢀ60747-8-4,ꢀpgꢀ83ꢀ
Inductiveꢀloadꢀ
tr
td(off)ꢀ
tf
RiseꢀTime
68
168
43
ns
ns
ns
Turn-offꢀdelayꢀtime
FallꢀTime
Fig.ꢀ10
Fig.ꢀ11
1.6
2.0
2.0
IFꢀ=ꢀ300ꢀA,ꢀVGSꢀ=ꢀ0
VSD
QC
DiodeꢀForwardꢀVoltage
TotalꢀCapacitiveꢀCharge
V
IFꢀ=ꢀ300ꢀA,ꢀTJꢀ=ꢀ150ꢀ˚C,ꢀVGSꢀ=ꢀ0
3.2
μC
Note:ꢀTheꢀreverseꢀrecoveryꢀisꢀpurelyꢀcapacitive
Thermal Characteristics (per switch)
Symbol
RthJCM
Parameter
Min.
Typ.
Max.
0.075
0.076
Unit
Test Conditions
Note
ThermalꢀResistanceꢀJuction-to-CaseꢀforꢀMOSFET
ThermalꢀResistanceꢀJuction-to-CaseꢀforꢀDiode
0.070
0.073
Tcꢀ=ꢀ90ꢀ˚C,ꢀPDꢀ=ꢀ150ꢀW
Tcꢀ=ꢀ90ꢀ˚C,ꢀPDꢀ=ꢀ130ꢀW
Fig.ꢀ27
Fig.ꢀ28
˚C/W
RthJCD
Additional Module Data
Symbol
Parameter
Max.
Unit
Test Condtion
W
M
Weight
300
5
g
Nm
MountingꢀTorque
ClearanceꢀDistance
Toꢀheatsinkꢀandꢀterminals
Terminalꢀtoꢀterminal
9
mm
mm
mm
30
40
Terminalꢀtoꢀterminal
Terminalꢀtoꢀbaseplate
CreepageꢀDistance
WAS300M12BM2 Rev. -, May 2017
2
Typical Performance
600
600
500
400
300
200
100
0
VGS = 14 V
VGS = 20 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
VGS = 12 V
VGS = 20 V
VGS = 12 V
VGS = 10 V
500
VGS = 18 V
VGS = 10 V
400
VGS = 16 V
300
200
100
0
Conditions:
TJ = -40°C
tp = 200 µs
Conditions:
TJ = 25°C
tp = 200 µs
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
ꢀꢀꢀꢀFigureꢀ1.ꢀOutputꢀCharacteristicsꢀTJꢀ=ꢀ-40ꢀ˚C
Figureꢀ2.ꢀOutputꢀCharacteristicsꢀTJꢀ=ꢀ25ꢀ˚C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
600
500
400
300
200
100
0
VGS = 20 V
VGS = 12 V
Conditions:
IDS = 300 A
VGS = 20 V
tp = 200 µs
VGS = 18 V
VGS = 10 V
VGS = 16 V
VGS = 14 V
Conditions:
TJ = 150°C
tp = 200 µs
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
Junction Temperature, TJ (°C)
Drain-Source Voltage VDS (V)
ꢀFigureꢀ4.ꢀNormalizedꢀOn-Resistanceꢀvs.ꢀTemperature
Figureꢀ3.ꢀOutputꢀCharacteristicsꢀTJꢀ=ꢀ150ꢀ˚C
10.0
10
9
8
7
6
5
4
3
2
1
0
Conditions:
VGS = 20 V
tp = 200 µs
9.0
VGS = 12 V
Tj = 150 °C
8.0
VGS = 14 V
7.0
6.0
VGS = 16 V
5.0
Tj = 25 °C
VGS = 18 V
4.0
VGS = 20 V
Tj = -40 °C
3.0
2.0
Conditions:
IDS = 300 A
tp = 200 µs
1.0
0.0
0
100
200
300
400
500
600
-50
-25
0
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Drain-Source Current, IDS (A)
Figureꢀ5.ꢀOn-Resistanceꢀvs.ꢀDrainꢀCurrentꢀforꢀ
VariousꢀTemperatures
Figureꢀ6.ꢀOn-Resistanceꢀvs.ꢀTemperatureꢀforꢀVariousꢀ
Gate-SourceꢀVoltage
WAS300M12BM2 Rev. -, May 2017
3
Typical Performance
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
400
350
300
250
200
150
100
50
Conditions:
VDS = 20 V
tp < 200 µs
Conditions
DS = V
IDS = 15mA
V
GS
TJ = 150 °C
TJ = 25 °C
TJ = -40 °C
0
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
Junction Temperature TJ (°C)
Gate-Source Voltage, VGS (V)
ꢀꢀꢀꢀFigureꢀ8.ꢀTransferꢀCharacteristicꢀforꢀVarious
JunctionꢀTemperatures
Figureꢀ7.ꢀThresholdꢀVoltageꢀvs.ꢀTemperature
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
0
VGS = 0 V
-100
-200
-300
-400
-500
-600
-100
-200
-300
-400
-500
-600
VGS = -2 V
VGS = -5 V
VGS = -2 V
Conditions:
TJ = -40 °C
tp = 200 µs
Conditions:
TJ = 25°C
tp = 200 µs
VGS = -5 V
VGS = 0 V
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figureꢀ10.ꢀDiodeꢀCharacteristicꢀatꢀ25ꢀ˚Cꢀ
ꢀFigureꢀ9.ꢀDiodeꢀCharacteristicꢀatꢀ-40ꢀ˚C
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
0
VGS = 0 V
-100
-200
-300
-400
-500
-600
-100
-200
-300
-400
-500
-600
VGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
VGS = 0 V
VGS = -5 V
Conditions:
TJ = 150°C
tp = 200 µs
Conditions:
TJ = -40°C
tp = 200 µs
VGS = -2 V
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figureꢀ12.ꢀ3rdꢀQuadrantꢀCharacteristicꢀatꢀ-40ꢀ
˚C
Figureꢀ11.ꢀDiodeꢀCharacteristicꢀatꢀ150ꢀ˚Cꢀ
WAS300M12BM2 Rev. -, May 2017
4
Typical Performance
-3.0
-2.5
Conditions:
TJ = 25°C
tp = 200 µs
-2.0
-1.5
-1.0
-0.5
0.0
-3.0
-2.5
Conditions:
TJ = 150°C
tp = 200 µs
-2.0
-1.5
-1.0
-0.5
0.0
0
0
VGS = 0 V
VGS = 0 V
-100
-200
-300
-400
-500
-600
-100
-200
-300
-400
-500
-600
VGS = 5 V
VGS = 5 V
VGS = 10 V
VGS = 10 V
VGS = 15 V
VGS = 15 V
VGS = 20 V
VGS = 20 V
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figureꢀ14.ꢀ3rdꢀQuadrantꢀCharacteristicꢀatꢀ150ꢀ
˚C
ꢀꢀꢀꢀFigureꢀ13.ꢀ3rdꢀQuadrantꢀCharacteristicꢀatꢀ25ꢀ
˚C
100
25
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 200 kHz
Conditions:
TJ = 25 °C
20
Ciss
I
V
DS = 300 A
DS = 1000 V
10
1
15
10
5
Coss
Crss
0.1
0.01
0
-5
0
50
100
Drain-Source Voltage, VDS (V)
150
200
0
200
400
600
800
1000
1200
Gate Charge (nC)
Figureꢀ16.ꢀTypicalꢀCapacitancesꢀvs.ꢀDrain-Sourceꢀ
Voltageꢀ(0ꢀ-ꢀ200ꢀV)
Figureꢀ15.ꢀTypicalꢀGateꢀChargeꢀCharacteristics
100
1.6
Conditions:
TJ = 25 °C
AC = 25 mV
f = 200 kHz
1.4
1.2
1
V
Ciss
10
Coss
1
0.8
0.6
0.4
0.2
0
Crss
0.1
0.01
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
Drain-Source Voltage, VDS (V)
Drain to Source Voltage, VDS (V)
Figureꢀ17.ꢀTypicalꢀCapacitancesꢀvs.ꢀDrain-Sourceꢀ
Voltageꢀ(0ꢀ-ꢀ1ꢀkV)
Figureꢀ18.ꢀTypicalꢀOutputꢀCapacitorꢀStoredꢀEnergy
WAS300M12BM2 Rev. -, May 2017
5
Typical Performance
20
30
25
20
15
10
5
Conditions:
TJ = 25 °C
18
Conditions:
TJ = 25 °C
V
R
V
DD = 600 V
G(ext) = 2.5 Ω
GS = -5/+20 V
V
R
V
DD = 800 V
G(ext) = 2.5 Ω
GS = -5/+20 V
16
14
12
10
8
L = 77 μH
L = 77 μH
ETotal
ETotal
6
EOn
EOn
4
EOff
EOff
2
0
0
0
50
100
150
200
250
300
350
400
450
0
50
100
150
200
250
300
350
400
450
Drain to Source Current, IDS (A)
Drain to Source Current, IDS (A)
ꢀꢀꢀꢀFigureꢀ19.ꢀInductiveꢀSwitchingꢀEnergyꢀvs.
DrainꢀCurrentꢀForꢀVDSꢀ=ꢀ600V,ꢀRGꢀ=ꢀ2.5ꢀΩꢀ
ꢀꢀꢀꢀFigureꢀ20.ꢀInductiveꢀSwitchingꢀEnergyꢀvs.
DrainꢀCurrentꢀForꢀVDSꢀ=ꢀ800ꢀV,ꢀRGꢀ=ꢀ2.5ꢀΩ
120
100
80
60
40
20
0
14
12
10
8
Conditions:
TJ = 25 °C
ETotal
V
DD = 600 V
DS =300 A
GS = -5/+20 V
L = 77 μH
I
V
ETotal
EOff
6
EOn
EOff
EOn
Conditions:
VDD = 600 V
4
R
G(ext) = 2.5 Ω
DS =300 A
GS = -5/+20 V
L = 77 μH
I
V
2
0
0
5
10
15
20
25
30
35
40
45
0
25
50
75
100
125
150
175
External Gate Resistor R
G
(ext) (Ohms)
Junction Temperature, TJ (°C)
Figureꢀ21.ꢀꢀInductiveꢀSwitchingꢀEnergyꢀvs.ꢀRG(ext)
Figureꢀ22.ꢀInductiveꢀSwitchingꢀEnergyꢀvs.ꢀTemperature
1200
1000
800
600
400
200
0
Conditions:
TJ = 25 °C
V
DD = 600 V
DS = 300 A
GS = -5/+20 V
I
V
td (off)
td (on)
tr
tf
0
5
10
15
20
25
30
35
40
External Gate Resistor, RG(ext) (Ohms)
Figureꢀ23.ꢀꢀTimingꢀvsꢀRG(ext)
ꢀꢀꢀꢀFigureꢀ24.ꢀꢀResistiveꢀSwitchingꢀTimeꢀDescription
WAS300M12BM2 Rev. -, May 2017
6
Typical Performance
1800
1600
1400
1200
1000
800
450
400
350
300
250
200
150
100
50
Conditions:
TJ ≤ 150 °C
Conditions:
TJ ≤ 150 °C
600
400
200
0
0
-40
-20
0
20
40
60
80
100
120
140
160
-40
-20
0
20
40
60
80
100
120
140
160
Case Temperature, TC (°C)
Case Temperature, TC (°C)
ꢀꢀꢀꢀFigureꢀ25.ꢀMaximumꢀPowerꢀDissipationꢀ(MOSFET)ꢀDe- ꢀꢀꢀꢀFigureꢀ26.ꢀꢀContinuousꢀDrainꢀCurrentꢀDeratingꢀvsꢀCaseꢀ
ratingꢀvsꢀCaseꢀTemperature
Temperature
100E-3
10E-3
1E-3
100E-3
10E-3
1E-3
0.5
0.5
0.3
0.1
0.3
0.1
0.05
0.02
0.05
0.02
SinglePulse
SinglePulse
0.01
0.01
100E-6
10E-6
100E-6
10E-6
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
Figureꢀ28.ꢀDiodeꢀJunctionꢀtoꢀCaseꢀThermalꢀImpedance
Figureꢀ27.ꢀMOSFETꢀJunctionꢀtoꢀCaseꢀThermalꢀImpedance
1000.00
10 µs
100 µs
Limited by RDS
On
1 ms
100.00
100 ms
10.00
1.00
0.10
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.01
0.1
1
10
100
1000
Drain-Source Voltage, VDS (V)
Figureꢀ29.ꢀSafeꢀOperatingꢀArea
WAS300M12BM2 Rev. -, May 2017
7
Schematic
Package Dimensions (mm)
WAS300M12BM2 Rev. -, May 2017
8
Notes
•ꢀ RoHSꢀCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
•ꢀ REAChꢀCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•ꢀ This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacꢀdefibrillatorsꢀorꢀsimilarꢀemergencyꢀmedicalꢀequipment,ꢀaircraftꢀnavigationꢀorꢀcommunicationꢀorꢀcontrolꢀ
systems,ꢀairꢀtrafficꢀcontrolꢀsystems.
ModuleꢀApplicationꢀNote
The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules.
Therefore, special precautions are required to realize the best performance. The interconnection between the gate
driver and module housing needs to be as short as possible. This will aford the best switching time and avoid the
potential for device oscillation. Also, great care is required to insure minimum inductance between the module and
link capacitors to avoid excessive VDS overshoots.
Please refer to application notes: Design Considerations when using Cree SiC Modules Part 1 and Part 2.
[CPWR-AN12 and CPWR-AN13]
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Copyright © 2015 - 2017 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Fax: +1.919.313.5451
www.wolfspeed.com
9
WAS300M12BM2 Rev. -, May 2017
相关型号：
©2020 ICPDF网 联系我们和版权申明