CT3A01-R3 [CTMICRO]
N-Channel Enhancement MOSFET;
| 型号： | CT3A01-R3 |
| 厂家： | 
CT Micro International Corporation |
| 描述： | N-Channel Enhancement MOSFET |
| 文件： | 总11页 (文件大小：769K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CT3A01-R3
N-Channel Enhancement MOSFET
Features
Description
The CT3A01-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications.
Drain-Source Breakdown Voltage VDSS 20 V
Drain-Source On-Resistance
•
•
•
RDS(ON) 55m
RDS(ON) 65m
RDS(ON) 80m
Ω
Ω
Ω
, at VGS= 4.5V, ID=3.2A
, at VGS= 2.5V, ID= 2.5A
, at VGS= 1.8V, ID= 2.0A
•
•
•
Continuous Drain Current at TA=25 ID = 3.2A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
•
Power Management
•
•
Portable Equipment
Load switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Rev 4
Jun, 2015
Page 1
CT3A01-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
Test Conditions
Min
V
Notes
Drain-Source Voltage
20
V
DS
GS
Gate-Source Voltage
8
3.2
V
V
Continuous Drain Current @TA=25
A
1
1
2
ID
Pulsed Drain Current
15
A
IDM
Total Power Dissipation @TA=25
1.4
W
°C
°C
PD
Storage Temperature Range
-55 to 150
-55 to 150
T
STG
Operating Junction Temperature Range
T
J
Thermal Characteristics
Symbol
Parameters
Test Conditions
Min
--
Typ
Max
--
Units Notes
Thermal Resistance
Junction-Ambient
R
ӨJA
oC /W
1,4
125
CT Micro
Proprietary & Confidential
Rev 4
Jun, 2015
Page 2
CT3A01-R3
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
= 250µA
DS = 20V, VGS = 0V
Min
Typ
Max
-
Units Notes
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
V
GS= 0V, I
D
20
-
-
-
V
B
VDSS
DSS
V
1
µA
nA
I
V
GS
=
8V, VDS = 0V
100
-
-
IGSS
On Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
55
Max
85
Units Notes
V
V
V
V
GS = 4.5V, I
GS = 2.5V, I
GS = 1.8V, I
D
D
D
= 3.2A
= 2.5A
= 2.0A
-
-
-
mΩ
Drain-Source On-Resistance
Gate-Source Threshold Voltage
65
115
130
1.2
mΩ
RDS(ON)
3
80
mΩ
VGS(th)
GS = VDS, I
D
=250µA
0.75
V
3
Dynamic Characteristics
Symbol
Parameters
Test Conditions
VGS
Min
Typ
455
90
Max
Units Notes
Input Capacitance
-
-
-
-
-
-
C
ISS
=0V,
Output Capacitance
V
DS =15V
f=1MHz
pF
C
OSS
RSS
Reverse Transfer Capacitance
60
C
Switching Characteristics
Symbol
Parameters
Turn-On Delay Time
Rise Time
Test Conditions
VDS = 15V ,
VGS = 4.5V,
RG = 6Ω,
Min
Typ
9
Max
Units
Notes
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T
D(ON)
4
T
R
ns
Turn-Off Delay Time
Fall Time
20
4.5
6.4
3
T
D(OFF)
ID =1.0A
T
F
Total Gate Charge
Gate-Source Charge
Gate-Drain (Miller) Charge
VDS = 10V ,
VGS = 4.5V,
ID =3.2A
Q
G
nC
Q
GS
3.0
Q
GD
CT Micro
Proprietary & Confidential
Rev 4
Jun, 2015
Page 3
CT3A01-R3
N-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Test Conditions
= 3.2
Min
Typ
Max
1.2
Units
Notes
Body Diode Forward Voltage
Body Diode Continuous Current
V
GS = 0V, I
D
-
-
-
-
V
A
VSD
3.2
1
ISD
Note:
1. The power dissipation is limited by 150
2. Device mounted on a glass-epoxy board
junction temperature.
FR-4
25.4 × 25.4 mm .
2 Oz Copper
Actual Size
3. The data tested by pulsed , pulse width
4. Thermal Resistance follow JESD51-3.
300 s , duty cycle
2%
CT Micro
Proprietary & Confidential
Rev 4
Jun, 2015
Page 4
CT3A01-R3
N-Channel Enhancement MOSFET
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Rev 4
Jun, 2015
Page 5
CT3A01-R3
N-Channel Enhancement MOSFET
CT Micro
Proprietary & Confidential
Rev 4
Jun, 2015
Page 6
CT3A01-R3
N-Channel Enhancement MOSFET
Test Circuits & Waveforms
Figure 9: Gate Charge Test Circuit
Figure 10: Gate Charge Waveform
Figure 11: Switching Time Test Circuit
Figure 12: Switching Time Waveform
CT Micro
Proprietary & Confidential
Rev 4
Jun, 2015
Page 7
CT3A01-R3
N-Channel Enhancement MOSFET
Package Dimension (SC-59)
Recommended pad layout for surface mount leadform
CT Micro
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Rev 4
Jun, 2015
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CT3A01-R3
N-Channel Enhancement MOSFET
Marking Information
3 A 0 1
3A01
: Device Number
Ordering Information
Part Number
Description
Quantity
CT3A01-R3
SC-59 Reel
3000 pcs
CT Micro
Proprietary & Confidential
Rev 4
Jun, 2015
Page 9
CT3A01-R3
N-Channel Enhancement MOSFET
Reflow Profile
Profile Feature
Pb-Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (ts) from (Tsmin to Tsmax)
Ramp-up Rate (tL to tP)
200°C
60-120 seconds
3°C/second max.
217°C
Liquidous Temperature (TL)
Time (tL) Maintained Above (TL)
Peak Body Package Temperature
Time (tP) within 5°C of 260°C
Ramp-down Rate (TP to TL)
Time 25°C to Peak Temperature
60 – 150 seconds
260°C +0°C / -5°C
30 seconds
6°C/second max
8 minutes max.
CT Micro
Proprietary & Confidential
Rev 4
Jun, 2015
Page 10
CT3A01-R3
N-Channel Enhancement MOSFET
DISCLAIMER
CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
______________________________________________________________________________________
CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION.
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body, or (b) support or sustain life,
or (c) whose failure to perform when properly used
in accordance with instruction for use provided in
the labelling, can be reasonably expected to result
in significant injury to the user.
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
CT Micro
Proprietary & Confidential
Rev 4
Jun, 2015
Page 11
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