CTH6106PS-T52 [CTMICRO]
P-Channel Enhancement MOSFET;
| 型号： | CTH6106PS-T52 |
| 厂家： | 
CT Micro International Corporation |
| 描述： | P-Channel Enhancement MOSFET |
| 文件： | 总11页 (文件大小：2188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CTH6106PS-T52
P-Channel Enhancement MOSFET
Features
Description
The CTH6106PS-T52 uses high performance
Trench Technology to provide excellent RDS(ON) and
low gate charge which is suitable for most of the
synchronous buck converter applications .
• Drain-Source Breakdown Voltage VDSS -60 V
• Drain-Source On-Resistance
R
DS(ON) 14m
Ω
Ω
, at VGS= -10V, IDS= -17A
, at VGS= -4.5V, IDS= -14A
RDS(ON) 16m
• Continuous Drain Current at TC=25 ID = -61A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Applications
•Load Switch
•Power Management
•LCD Display inverter
•DC/DC Converter
Package Outline
Schematic
Drain
Drain
Gate
Gate
Source
Source
CT Micro
Proprietary & Confidential
Rev 2
Jun, 2015
Page 1
CTH6106PS-T52
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25OC
Symbol
VDS
VGS
ID
Parameters
Ratings
-60
Units
V
Notes
Drain-Source Voltage
Gate-Source Voltage
20
V
-61
A
1
1
2
Continuous Drain Current @ TC=25
Pulsed Drain Current
-240
A
IDM
114
W
PD
Total Power Dissipation
@ TC=25
Storage Temperature Range
-55 to 150
-55 to 150
0C
0C
TSTG
TJ
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
Thermal Resistance
Junction-Case
Test Conditions
Min
Typ
Max
Units Notes
-
-
1.1
C0/W
1,2
RӨ
JC
CT Micro
Proprietary & Confidential
Rev 2
Jun, 2015
Page 2
CTH6106PS-T52
P-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
BVDSS
IDSS
Parameters
Test Conditions
VGS=0V, ID= -250µA
VDS = -60V, VGS = 0V
Min
Typ
Max
-
Units Notes
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
-60
-
-
-
V
-
-
-1
µA
nA
IGSS
V
GS = 20V, VDS = 0V
100
On Characteristics
Symbol
RDS(ON)
VGS(TH)
Parameters
Test Conditions
Min
Typ
14
16
-
Max
17
Units
m
Notes
Notes
Notes
VGS = -10V, ID = -17A
VGS = -4.5V, ID = -14A
-
-
Drain-Source On-Resistance
Gate-Source Threshold Voltage
m
20
-1.0
-3.0
V
V
DS =VGS , ID = -250µA
Dynamic Characteristics
Symbol
Parameters
Input Capacitance
Test Conditions
Min
Typ
4120
415
Max
Units
-
-
-
-
-
-
CISS
VDS = -15V , VGS = 0V,
f=1Mhz
Output Capacitance
pF
COSS
CRSS
Reverse Transfer Capacitance
140
Switching Characteristics
Symbol
TD(ON)
TR
Parameters
Turn-On Delay Time
Rise Time
Test Conditions
Min
Typ
52
Max
Units
-
-
-
-
-
-
-
-
-
-
VDS = -30V ,
VGS = -10V,
RL = 30 ,
19
ns
Turn-Off Delay Time
Fall Time
220
60
TD(OFF)
TF
RG = 6 ,
Total Gate Charge
Gate-Source Charge
Gate-Drain (Miller) Charge
45
-
-
-
QG
VDS = -30 , VGS = -4.5V,
ID = -50A
19
nC
QGS
25
QGD
CT Micro
Proprietary & Confidential
Rev 2
Jun, 2015
Page 3
CTH6106PS-T52
P-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
-0.9
-
Max
-1.2
-2
Units
Notes
Body Diode Forward Voltage
Body Diode Continuous Current
VGS = 0V, ID = -2A
-
-
V
A
VSD
1
ISD
Note:
1. The power dissipation is limited by 150 junction temperature.
2. Device mounted on a glass-epoxy board
FR-4
25.4 × 25.4 mm .
2 Oz Copper
Actual Size
3. The data tested by pulsed , pulse width
4. Thermal Resistance follow JESD51-3.
300 s , duty cycle
2%
CT Micro
Proprietary & Confidential
Rev 2
Jun, 2015
Page 4
CTH6106PS-T52
P-Channel Enhancement MOSFET
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Rev 2
Jun, 2015
Page 5
CTH6106PS-T52
P-Channel Enhancement MOSFET
CT Micro
Proprietary & Confidential
Rev 2
Jun, 2015
Page 6
CTH6106PS-T52
P-Channel Enhancement MOSFET
Test Circuits & Waveforms
Figure 9: Gate Charge Test Circuit
Figure 10: Gate Charge Waveform
Figure 11: Switching Time Test Circuit
Figure 12: Switching Time Waveform
CT Micro
Proprietary & Confidential
Rev 2
Jun, 2015
Page 7
CTH6106PS-T52
P-Channel Enhancement MOSFET
Package Dimension (TO-252)
Dimensions in mm unless otherwise stated
Recommended pad layout for surface mount leadform
Dimensions in mm unless otherwise
stated
CT Micro
Proprietary & Confidential
Rev 2
Jun, 2015
Page 8
CTH6106PS-T52
P-Channel Enhancement MOSFET
Marking Information
CT
H6106P
YWWA
：Denotes “ CT Micro”
CT
：Device Number
：Fiscal Year
H6106P
Y
：Work Week
WW
A
：Production Code
Ordering Information
Part Number
Description
Quantity
CTH6106PS-T52
TO-252 Reel
2500 pcs
CT Micro
Proprietary & Confidential
Rev 2
Jun, 2015
Page 9
CTH6106PS-T52
P-Channel Enhancement MOSFET
Reflow Profile
Profile Feature
Pb-Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (ts) from (Tsmin to Tsmax)
Ramp-up Rate (tL to tP)
200°C
60-120 seconds
3°C/second max.
217°C
Liquidous Temperature (TL)
Time (tL) Maintained Above (TL)
Peak Body Package Temperature
Time (tP) within 5°C of 260°C
Ramp-down Rate (TP to TL)
Time 25°C to Peak Temperature
60 – 150 seconds
260°C +0°C / -5°C
30 seconds
6°C/second max
8 minutes max.
CT Micro
Proprietary & Confidential
Rev 2
Jun, 2015
Page 10
CTH6106PS-T52
P-Channel Enhancement MOSFET
DISCLAIMER
CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
______________________________________________________________________________________
CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION.
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body, or (b) support or sustain life,
or (c) whose failure to perform when properly used
in accordance with instruction for use provided in
the labeling, can be reasonably expected to result
in significant injury to the user.
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
CT Micro
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Rev 2
Jun, 2015
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