HMLQ20161T [CYNTEC]
Power Choke Coil HMLQ20161T MDR type;
| 型号： | HMLQ20161T |
| 厂家： | 
Cyntec |
| 描述： | Power Choke Coil HMLQ20161T MDR type |
| 文件： | 总3页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DOCUMENT : HMLQ20161T-000
CYNTEC CO., LTD.
乾坤科技股份有限公司
REVISION
PAGE
: A3
: 1 OF 3
Power Choke Coil HMLQ20161T MDR type
Features
High performance (Isat) realized by metal dust core.
Low profile：2.0mm x 1.6mm x 1.0mm
Low loss realized with low DCR
100% lead (Pb) free meet RoHS standard
Application
DC/DC converter for CPU in Notebook PC
Cellular phones, LCD displays, HDDs, DVCs, DSCs, PDAs etc..
Thin type on-board power supply module for exchanger
VRM for server
Outline Dimensions
L
Code
Dimensions
2.0 0.1
1.6 0.1
1.0 Max.
W
L
W
T
P
P
0.5 0.2
Unit : mm
T
Recommend Land Pattern Dimensions
The customer shall determine the land dimensions shown below after confirming and safety.
B
A
B
C
1.6
0.7
2.0
A
C
Unit : mm
Oct., 2019
DOCUMENT : HMLQ20161T-000
CYNTEC CO., LTD.
乾坤科技股份有限公司
REVISION
PAGE
: A3
: 2 OF 3
Marking
The point on the top surface represents winding direction of choke.
Upside of Chip
PIN 1
PIN 2
Coil clockwise around
Specifications
L0
Inductance
( H )
Heat Rating Current
DC Amps. Idc ( A )
Saturation Current
DC Amps. Isat ( A )
Rdc ( m)
Part Number
@ (0A)
Typical Maximum Typical Maximum
Typical
Maximum
HMLQ20161T-R24MDR
HMLQ20161T-R33MDR
HMLQ20161T-R47MDR
HMLQ20161T-R68MDR
HMLQ20161T-1R0MDR
HMLQ20161T-1R5MDR
HMLQ20161T-2R2MDR
0.24
0.33
0.47
0.68
1.0
18
21
23
26
5.10
4.80
4.40
3.40
3.20
2.35
2.20
4.50
4.40
4.05
3.10
3.00
2.05
2.00
6.70
5.70
4.90
4.60
3.90
3.00
2.65
6.10
5.20
4.50
4.00
3.65
2.70
2.45
26
32
40
50
49
59
1.5
99
109
150
2.2
142
* ：If you require another part number please contact with us.
**：Inductance Tolerance 20%
Note 1.： All test data is referenced to 25℃ ambient.
Note 2.： Test Condition:1MHz, 1.0Vrms
Note 3.： Idc : DC current (A) that will cause an approximate △ T of 40℃
Note 4.： Isat : DC current (A) that will cause L0 to drop approximately 30%
Note 5.： Operating Temperature Range -55℃ to + 125℃
Note 6.： The part temperature (ambient + temp rise) should not exceed 125℃ under the worst case operating
conditions. Circuit design, component placement, PCB trace size and thickness, airflow and other cooling
provision all affect the part temperature. Part temperature should be verified in the end application.
Note 7.： The rated current as listed is either the saturation current or the heating current depending on which value
is lower.
Oct., 2019
DOCUMENT : HMLQ20161T-000
CYNTEC CO., LTD.
乾坤科技股份有限公司
REVISION
PAGE
: A3
: 3 OF 3
Current Characteristic
HMLQ20161T-R33MDR
0.42
0.35
0.28
0.21
0.14
0.07
0.00
100
80
60
40
20
0
HMLQ20161T-R24MDR
0.30
0.25
0.20
0.15
0.10
0.05
0.00
100
80
60
40
20
0
INDUCTANCE(μH)
TEMP. RISE(℃)
INDUCTANCE(μH)
TEMP. RISE(℃)
0
1
2
3
4
5
6
7
8
0.0
0.8
1.6
2.4
3.2
4.0
4.8
5.6
6.4
7.2
DC BIAS(Amps)
DC BIAS(Amps)
HMLQ20161T-R68MDR
HMLQ20161T-R47MDR
0.84
100
0.60
0.50
0.40
0.30
0.20
0.10
0.00
100
0.70
0.56
0.42
0.28
0.14
0.00
80
60
40
20
0
80
60
40
20
0
INDUCTANCE(μH)
TEMP. RISE(℃)
INDUCTNACE(μH)
TEMP. RISE(℃)
0.0
0.6
1.2
1.8
2.4
3.0
3.6
4.2
4.8
5.4
0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 5.4 6.0 6.6
DC BIAS(Amps)
DC BIAS(Amps)
HMLQ20161T-1R0MDR
1.80
1.50
1.20
0.90
0.60
0.30
0.00
HMLQ20161T-1R5MDR
100
1.20
1.00
0.80
0.60
0.40
0.20
0.00
100
80
60
40
20
0
80
60
40
20
0
INDUCTANCE(μH)
TEMP. RISE(℃)
INDUCTNACE(μH)
TEMP. RISE(℃)
0.0
0.6
1.2
1.8
2.4
3.0
3.6
4.2
4.8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
DC BIAS(Amps)
DC BIAS(Amps)
HMLQ20161T-2R2MDR
2.70
2.25
1.80
1.35
0.90
0.45
0.00
90
75
60
45
30
15
0
INDUCTNACE(μH)
TEMP. RISE(℃)
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
DC BIAS(Amps)
Oct., 2019
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