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CY14B108N-BA25XI [CYPRESS]

8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles; 8兆位（ 1024的K× 512分之8的K× 16 ）的nvSRAM无限的读，写和RECALL周期

CY14B108N-BA25XI


元器件型号：	CY14B108N-BA25XI
生产厂家：	CYPRESS SEMICONDUCTOR
描述和应用：	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 8兆位（ 1024的K× 512分之8的K× 16 ）的nvSRAM无限的读，写和RECALL周期存储内存集成电路静态存储器
PDF文件：	总25页 (文件大小：911K)
下载文档：	下载PDF数据表文档文件
型号参数：CY14B108N-BA25XI参数

CY14B108N-BA25XIT

8-Mbit (1024 K × 8/512 K × 16) nvSRAM

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1 CYPRESS

CY14B108N-BA25XIT

8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles

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9 CYPRESS

CY14B108N-BA25XIT

8 Mbit (1024K x 8/512K x 16) nvSRAM

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3 CYPRESS

CY14B108N-BA45XC

8 Mbit (1024K x 8/512K x 16) nvSRAM

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1 CYPRESS

CY14B108N-BA45XCT

8 Mbit (1024K x 8/512K x 16) nvSRAM

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1 CYPRESS

CY14B108N-BA45XI

8 Mbit (1024K x 8/512K x 16) nvSRAM

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13 CYPRESS

CY14B108N-BA45XI

8-Mbit (1024 K × 8/512 K × 16) nvSRAM

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0 CYPRESS

CY14B108N-BA45XI

8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles

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10 CYPRESS

CY14B108N-BA45XI

Non-Volatile SRAM, 512KX16, 45ns, CMOS, PBGA48, FBGA-48

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1 CYPRESS

CY14B108N-BA45XIT

8-Mbit (1024 K × 8/512 K × 16) nvSRAM

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1 CYPRESS

CY14B108N-BA45XIT

8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles

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4 CYPRESS

CY14B108N-BA45XIT

8 Mbit (1024K x 8/512K x 16) nvSRAM

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1 CYPRESS

CY14B108N-ZSP20XC

8 Mbit (1024K x 8/512K x 16) nvSRAM

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1 CYPRESS

CY14B108N-ZSP20XCT

8 Mbit (1024K x 8/512K x 16) nvSRAM

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1 CYPRESS

CY14B108N-ZSP20XI

8 Mbit (1024K x 8/512K x 16) nvSRAM

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1 CYPRESS

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