CY7C0852V25 [CYPRESS]

SRAM;
CY7C0852V25
型号: CY7C0852V25
厂家: CYPRESS    CYPRESS
描述:

SRAM

静态存储器
文件: 总6页 (文件大小:193K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
851V25  
52V25  
CY7C0851V25  
CY7C0852V25  
ADVANCE INFORMATION  
2.5V 64K/128K x 36  
Sync Dual-Port Static RAM  
Features  
Functional Description  
True Dual-Ported memory cellsthatallow simultaneous  
access of the same memory location  
• Sync. Pipelined 4.5 Megabit devices  
64K x 36 organization (CY7C0851V25)  
The CY7C0851V25/CY7C0852V25 is a 4.5-Megabit pipelined  
synchronous true dual-port Static RAM. This is a high-speed,  
low-power 2.5V CMOS dual-port static RAM. Two ports are  
provided, permitting independent, simultaneous access for  
reads from any location in memory. A particular port can write  
to a certain location while the other port is reading that location  
simultaneously. The result of writing to the same location by  
more than one port at the same time is undefined. Registers  
on control, address, and data lines allow for minimal set-up  
and hold time.  
128K x 36 organization (CY7C0852V25)  
• Pipelined output mode allows fast 100-MHz operation  
• 0.18-micron CMOS for optimum speed/power  
• High-speed clock to data access: 5 ns (max.)  
• 2.5V Low operating power  
During a read operation, data is registered for decreased cycle  
Active = 150 mA (typical)  
time. Clock to data valid t  
= 5 ns. Each port contains a burst  
CD2  
Standby = 10 mA (typical)  
counter on the input address register. After externally loading  
the counter with the initial address the counter will self-incre-  
ment the address internally (more details to follow). The inter-  
nal write pulse width is independent of the duration of the R/W  
input signal. The internal write pulse is self-timed to allow the  
shortest possible cycle times.  
• HSTL class 1 I/O (0.75 Vref)  
• Counter wraparound control  
Internal mask register controls counter wraparound  
Counter-Interrupt flags to indicate wraparound  
Memory Block Retransmit Operation  
• Counter readback on address lines  
• Mask register readback on address lines  
• Interrupt flags for message passing  
• Global Master reset  
• Width and Depth expansion capabilities  
• Dual Chip Enables on both ports for easy depth expan-  
sion  
A HIGH on CE0 or LOW on CE1 for one clock cycle will power  
down the internal circuitry to reduce the static power consump-  
tion. One cycle is required with chip enables asserted to reac-  
tivate the outputs.  
Counter enable inputs are provided to stall the operation of the  
address input and utilize the internal address generated by the  
internal counter for fast interleaved memory applications. A  
port’s burst counter is loaded when the port’s address strobe  
(ADS) and (CNTEN) signals are LOW. When the port’s counter  
enable (CNTEN) is asserted and the ADS is deasserted, the  
address counter will increment on each LOW to HIGH transi-  
tion of that port’s clock signal. This will read/write one word  
from/into each successive address location until CNTEN is  
deasserted. The counter can address the entire memory array  
and will loop back to the start. Counter reset (CNTRST) is used  
to reset the unmasked portion of the burst counter to 0s. A  
counter-mask register is used to control the counter wrap. The  
counter and mask register operations are described in more  
detail in the following sections.  
• Separate byte enables on both ports  
• Commercial and Industrial temperature ranges  
• IEEE 1149.1 JTAG boundary scan  
• 172-ball BGA (1-mm pitch) (15 mm x 15 mm x 0.51 mm)  
New features added to the CY7C0851V25/CY7C0852V25 in-  
clude: readback of burst-counter internal address value on ad-  
dress lines, counter-mask registers to control the counter  
wrap-around and counter interrupt (CNTINT) flags, readback  
of mask register value on address lines, retransmit functional-  
ity, interrupt flags for message passing, JTAG for boundary  
scan, and asynchronous Master Reset.  
For the most recent information, visit the Cypress web site at www.cypress.com  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
October 17, 2000  
CY7C0851V25  
CY7C0852V25  
ADVANCE INFORMATION  
Logic Block Diagram  
OE  
R/W  
OE  
R/W  
L
R
R
L
B0  
B1  
B2  
B3  
B0  
B1  
B2  
B3  
L
L
L
L
R
R
R
R
CE  
CE  
CE  
CE  
0L  
0R  
1R  
1L  
9
9
9
9
DQ27LDQ35L  
DQ18LDQ26L  
DQ9LDQ17L  
DQ0LDQ8L  
DQ27RDQ35R  
DQ18RDQ26R  
DQ9RDQ17R  
DQ0RDQ8R  
I/O  
Control  
I/O  
Control  
9
9
9
9
Addr.  
Read  
Back  
Addr.  
Read  
Back  
True  
Dual-Ported  
RAM Array  
17  
17  
A
A  
16L  
A
A  
16R  
0L  
0R  
Mask Register  
Mask Register  
CNT/MSK  
ADS  
CNT/MSK  
R
R
R
L
ADS  
Counter/  
Address  
Register  
Counter/  
Address  
Register  
L
Address  
Address  
CNTEN  
CNTRST  
CLK  
CNTEN  
L
Decode  
Decode  
CNTRST  
R
R
L
Mirror Reg  
Mirror Reg  
CLK  
L
CNTINT  
CNTINT  
R
L
TMS  
TDI  
TCK  
Reset  
Logic  
Interrupt  
Interrupt  
Logic  
JTAG  
TDO  
MRST  
INT  
INT  
R
L
Logic  
2
CY7C0851V25  
CY7C0852V25  
ADVANCE INFORMATION  
Pin Configuration  
172-Ball Grid Array (BGA)  
Top View  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
DQ32L  
DQ30L  
VSSQ  
DQ13L  
VDDQ  
DQ11L  
DQ11R  
VDDQ  
DQ13R  
VSSQ  
DQ30R  
DQ32R  
CNTINTL  
CNTINTR  
A
B
C
D
E
F
A0L  
VREFL  
A2L  
DQ33L  
A1L  
DQ29  
DQ31L  
DQ35L  
CE1L  
A7L  
DQ17L  
DQ27L  
DQ34L  
B0L  
DQ14L  
INTL  
DQ12L  
DQ15L  
DQ16L  
VSSA  
DQ9L  
DQ10L  
VSSQ  
DQ9R  
DQ10R  
VSSQ  
DQ12R  
DQ15R  
DQ16R  
VDDA  
DQ14R  
INTR  
DQ17R  
DQ27R  
DQ34R  
B0R  
DQ29R  
DQ31R  
DQ35R  
CE1R  
A7R  
DQ33R  
A1R  
A0R  
VREFR  
A2R  
A3L  
DQ28L  
VDDQ  
VDDA  
DQ28R  
VDDQ  
VSSA  
A3R  
A4L  
A5L  
A5R  
A4R  
VDD  
OEL  
VSS  
A9L  
A6L  
B1L  
A6R  
VDD  
OER  
VSS  
B1R  
B2L  
B3L  
CE0L  
CE0R  
B3R  
B2R  
G
H
J
R/WL  
A10L  
A12L  
A13L  
A8L  
CLKL  
CLKR  
A8R  
R/WR  
A10R  
A12R  
A13R  
VSS  
ADSL  
ADSR  
A9R  
VSSA  
VDDQ  
DQ25L  
VDDA  
VDDQ  
DQ25R  
MRST  
A15R  
A11L  
CNTRSTL  
DQ26L  
CNTRSTR  
A11R  
A15L  
CNTENL  
VDDA  
VSSA  
K
DQ19L  
VSSQ  
VSSQ  
DQ19R  
DQ26R CNTENR  
CNT/  
MSKR  
CNT/MSKL  
L
M
N
P
A14L  
DQ20L  
DQ21L  
DQ22L  
DQ8L  
TDO  
DQ18L  
DQ6L  
VSSQ  
DQ7L  
DQ3L  
VDDQ  
DQ2L  
DQ0L  
DQ1L  
DQ2R  
DQ0R  
DQ1R  
DQ7R  
DQ3R  
VDDQ  
DQ18R  
DQ6R  
VSSQ  
DQ22R  
DQ8R  
TMS  
A14R  
A16L  
DQO24L  
DQ23L  
TDI  
TCK  
DQ5R  
DQ4R  
A16R  
DQ5L  
DQ4L  
DQ20R  
DQ21R  
DQ24R  
DQ23R  
3
CY7C0851V25  
CY7C0852V25  
ADVANCE INFORMATION  
Selection Guide  
CY7C0851V25/CY7C0852V25  
-100  
f
(MHz)  
100  
5
MAX  
Max. Access Time (ns) (Clock to Data)  
Typical Operating Current I (mA)  
150  
CC  
Typical Standby Current for I  
Typical Standby Current for I  
(mA) (Both Ports TTL Level)  
(mA) (Both Ports CMOS Level)  
SB1  
SB3  
10  
4
CY7C0851V25  
CY7C0852V25  
ADVANCE INFORMATION  
Pin Definitions  
Left Port  
A  
Right Port  
A  
Description  
A
A
Address Inputs.  
0L  
16L  
0R  
16R  
ADS  
ADS  
Address Strobe Input. Used as an address qualifier. This signal should be asserted LOW to  
assert the part using the externally supplied address on Address Pins and to load this address  
into the Burst Address Counter.  
L
R
CE0  
CE1  
CLK  
CE0  
CE1  
CLK  
Active Low Chip Enable Input.  
Active High Chip Enable Input.  
L
L
L
R
R
R
Clock Signal. Maximum clock input rate is f  
.
MAX  
CNTEN  
CNTEN  
Counter Enable Input. Asserting this signal LOW increments the burst address counter of its  
respective port on each rising edge of CLK. Increment is disabled if ADS or CNTRST are  
asserted LOW.  
L
R
CNTRST  
CNTRST  
Counter Reset Input. Asserting this signal LOW resets to zero the unmasked portion of the  
burst address counter of its respective port. CNTRST is not disabled by asserting ADS or  
CNTEN.  
L
R
CNT/MSK  
CNT/MSK  
Address Counter Mask Register Enable Input. Asserting this signal LOW enables the access  
to the mask register. When tied HIGH the mask register is not accessible and the address  
counter operations are enabled based on the status of the counter control signals.  
L
R
DQ DQ  
DQ DQ  
35R  
Data Bus Input/Output.  
0L  
35L  
0R  
OE  
OE  
Output Enable Input. This asynchronous signal must be asserted LOW to enable the DQ data  
pins during read operations.  
L
R
INT  
INT  
Mailbox Interrupt Flag Output. Mailbox permits communications between ports. The upper two  
L
R
memory locations can be used for message passing. INT is asserted LOW when right port  
L
writes to the mailbox location of left port and vice versa. Interrupt to a port is deasserted HIGH  
when it reads the contents of its mailbox.  
CNTINT  
CNTINT  
Counter Interrupt Output. This pin is asserted LOW when the unmasked portion of the counter  
L
R
is incremented to all 1s.”  
R/W  
R/W  
Read/Write Enable Input. Assert this pin LOW to write to, or HIGH to read from the dual-port  
memory array.  
L
R
B
B  
B
B  
3L  
Byte Select Inputs. Asserting these signals enables read and write operations to the corre-  
sponding bytes of the memory array.  
0L  
3L  
0L  
MRST  
TMS  
Master Reset Input. MRST is an asynchronous input and affects both ports. Asserting MRST  
LOW performs all of the reset functions as described in the text. A MRST operation is required  
at power-up.  
JTAG Test Mode Select Input. It controls the advance of JTAG TAP state machine. State ma-  
chine transitions occur on the rising edge of TCK.  
TDI  
JTAG Test Data Input. Data on the TDI input will be shifted serially into selected registers.  
JTAG Test Clock Input.  
TCK  
TDO  
JTAG Test Data Output. TDO transitions occur on the falling edge of TCK. TDO is normally  
three-stated except when captured data is shifted out of the JTAG TAP.  
V
V
, V  
, V  
Ground Inputs (A: for address lines, Q: for data lines).  
Power Inputs (A: for address lines, Q: for data lines).  
SS SSA  
SSQ  
, V  
, V  
DDQ  
DD DDA  
5
CY7C0851V25  
CY7C0852V25  
ADVANCE INFORMATION  
Ordering Information  
64K x 36 (2 Meg) 2.5V Synchronous CY7C0851V25 Dual Port SRAM  
Speed  
(MHz)  
Package  
Name  
Operating  
Range  
Ordering Code  
Package Type  
Package Type  
100  
CY7C0851V25-100BBC  
BB172  
172-Ball Grid Array (BGA)  
Commercial  
128K x 36 (4 Meg) 2.5V Synchronous CY7C0852V25 Dual Port SRAM  
Speed  
(MHz)  
Package  
Name  
Operating  
Range  
Ordering Code  
CY7C0852V25-100BBC  
CY7C0852V25-100BBI  
100  
BB172  
BB172  
172-Ball Grid Array (BGA)  
172-Ball Grid Array (BGA)  
Commercial  
Industrial  
Shaded areas contain advanced information  
Document #: 38-01056-**  
Package Diagram  
172-Ball FBGA BB172  
51-85114  
© Cypress Semiconductor Corporation, 2000. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use  
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize  
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress  
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.  

相关型号:

CY7C0853AV

FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CYPRESS

CY7C0853AV-100BBC

FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CYPRESS

CY7C0853AV-100BBI

FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CYPRESS

CY7C0853AV-133BBC

FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CYPRESS

CY7C0853AV-133BBI

FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CYPRESS

CY7C0853V

FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CYPRESS

CY7C0853V-100BBC

FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CYPRESS

CY7C0853V-100BBI

FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CYPRESS

CY7C0853V-133BBC

FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CYPRESS

CY7C0853V-133BBI

FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CYPRESS

CY7C0853V-133BBXI

FLEx36™ 3.3 V 32 K / 64 K / 128 K / 256 K × 36 Synchronous Dual-Port RAM
CYPRESS

CY7C0853V-167BBC

Dual-Port SRAM, 256KX36, 4.4ns, CMOS, PBGA172, 15 X 15 MM, 1.25 MM HEIGHT, 1 MM PITCH, BGA-172
CYPRESS