CY7C1312BV18_11 [CYPRESS]
18-Mbit QDR? II SRAM Two-Word Burst Architecture; 18 - Mbit的QDR ？ II SRAM双字突发架构
| 型号： | CY7C1312BV18_11 |
| 厂家： | 
CYPRESS |
| 描述： | 18-Mbit QDR? II SRAM Two-Word Burst Architecture |
| 文件： | 总29页 (文件大小：1133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CY7C1312BV18
CY7C1314BV18
18-Mbit QDR® II SRAM Two-Word Burst
Architecture
18-Mbit QDR® II SRAM Two-Word Burst Architecture
Features
Functional Description
■ Separate independent read and write data ports
❐ Supports concurrent transactions
The CY7C1312BV18, and CY7C1314BV18 are 1.8
Synchronous Pipelined SRAMs, equipped with QDR® II
architecture. QDR II architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has data outputs to support read operations and the
write port has data inputs to support write operations. QDR II
architecture has separate data inputs and data outputs to
completely eliminate the need to “turn around” the data bus
required with common I/O devices. Access to each port is
accomplished through a common address bus. The read
address is latched on the rising edge of the K clock and the write
address is latched on the rising edge of the K clock. Accesses to
the QDR II read and write ports are completely independent of
one another. To maximize data throughput, both read and write
ports are provided with DDR interfaces. Each address location
is associated with two 18-bit words (CY7C1312BV18), or 36-bit
words (CY7C1314BV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K and C
and C), memory bandwidth is maximized while simplifying
system design by eliminating bus “turn arounds”.
V
■ 250 MHz clock for high bandwidth
■ Two-word burst on all accesses
■ Double data rate (DDR) interfaces on both read and write ports
(data transferred at 500 MHz) at 250 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Single multiplexed address input bus latches address inputs
for both read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self timed writes
■ Available in x18, and x36 configurations
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
■ Full data coherency, providing most current data
■ Core VDD = 1.8 V (±0.1 V); I/O VDDQ = 1.4 V to VDD
■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ Variable drive HSTL output buffers
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self timed write circuitry.
■ JTAG 1149.1 compatible test access port
■ Delay lock loop (DLL) for accurate data placement
Configurations
CY7C1312BV18 – 1 M × 18
CY7C1314BV18 – 512 K × 36
Selection Guide
Description
Maximum operating frequency
Maximum operating current
250 MHz
250
200 MHz
200
167 MHz
167
Unit
MHz
mA
x18
x36
800
675
600
900
750
650
Cypress Semiconductor Corporation
Document #: 38-05619 Rev. *J
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised February 2, 2011
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CY7C1312BV18
CY7C1314BV18
Logic Block Diagram (CY7C1312BV18)
18
D
[17:0]
Write
Reg
Write
Reg
19
Address
Register
A
(18:0)
19
Address
Register
A
(18:0)
RPS
K
K
Control
Logic
CLK
Gen.
C
C
DOFF
Read Data Reg.
CQ
CQ
36
18
V
REF
18
18
Reg.
Reg.
Reg.
Control
Logic
WPS
BWS
18
18
Q
[17:0]
[1:0]
Logic Block Diagram (CY7C1314BV18)
36
D
[35:0]
Write
Reg
Write
Reg
18
Address
Register
A
(17:0)
18
Address
Register
A
(17:0)
RPS
K
K
Control
Logic
CLK
Gen.
C
C
DOFF
Read Data Reg.
CQ
CQ
72
36
V
REF
36
36
Reg.
Reg.
Reg.
Control
Logic
WPS
BWS
36
36
Q
[35:0]
[3:0]
Document #: 38-05619 Rev. *J
Page 2 of 29
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CY7C1312BV18
CY7C1314BV18
Contents
Pin Configuration .............................................................4
165-ball FBGA (13 × 15 × 1.4 mm) Pinout ..................4
Pin Definitions ..................................................................5
Functional Overview ........................................................7
Read Operations .........................................................7
Write Operations .........................................................7
Byte Write Operations .................................................7
Single Clock Mode ......................................................7
Concurrent Transactions .............................................7
Depth Expansion .........................................................7
Programmable Impedance ..........................................8
Echo Clocks ................................................................8
DLL ..............................................................................8
Application Example ........................................................8
Truth Table ........................................................................9
Write Cycle Descriptions .................................................9
Write Cycle Descriptions ...............................................10
IEEE 1149.1 Serial Boundary Scan (JTAG) ..................11
Disabling the JTAG Feature ......................................11
Test Access Port—Test Clock ...................................11
Test Mode Select (TMS) ...........................................11
Test Data-In (TDI) .....................................................11
Test Data-Out (TDO) .................................................11
Performing a TAP Reset ...........................................11
TAP Registers ...........................................................11
TAP Instruction Set ...................................................11
TAP Controller State Diagram .......................................13
TAP Controller Block Diagram ......................................14
TAP Electrical Characteristics ......................................14
TAP AC Switching Characteristics ...............................15
TAP Timing and Test Conditions ..................................15
Identification Register Definitions ................................16
Scan Register Sizes .......................................................16
Instruction Codes ...........................................................16
Boundary Scan Order ....................................................17
Power-up Sequence in QDR II SRAM ...........................18
Power-up Sequence ..................................................18
DLL Constraints .........................................................18
Maximum Ratings ...........................................................19
Operating Range .............................................................19
Neutron Soft Error Immunity .........................................19
Electrical Characteristics ...............................................19
DC Electrical Characteristics .....................................19
AC Electrical Characteristics .....................................20
Capacitance ....................................................................21
Thermal Resistance ........................................................21
Switching Characteristics ..............................................22
Switching Waveforms ....................................................23
Ordering Information ......................................................24
Ordering Code Definitions .........................................24
Package Diagram ............................................................25
Acronyms ........................................................................26
Document Conventions .................................................26
Units of Measure .......................................................26
Document History Page .................................................27
Sales, Solutions, and Legal Information ......................29
Worldwide Sales and Design Support .......................29
Products ....................................................................29
PSoC Solutions .........................................................29
Document #: 38-05619 Rev. *J
Page 3 of 29
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CY7C1312BV18
CY7C1314BV18
Pin Configuration
The pin configuration for CY7C1312BV18, and CY7C1314BV18 follow. [1]
165-ball FBGA (13 × 15 × 1.4 mm) Pinout
Table 1. CY7C1312BV18 (1 M × 18)
1
2
3
4
5
6
7
8
9
10
11
CQ
NC/144 M NC/36 M
WPS
BWS1
K
NC/288
M
RPS
A
NC/72 M
CQ
A
B
C
D
E
F
NC
NC
Q9
NC
D9
D10
Q10
Q11
D12
Q13
VDDQ
D14
Q14
D15
D16
Q16
Q17
A
A
NC
A
K
BWS0
A
A
NC
NC
NC
NC
NC
NC
VDDQ
NC
NC
NC
NC
NC
NC
A
NC
Q7
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
VSS
A
VSS
NC
D11
NC
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
VSS
NC
D6
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
NC
Q12
D13
VREF
NC
NC
NC
VREF
Q4
G
H
J
NC
DOFF
NC
K
L
NC
NC
D3
NC
Q15
NC
NC
Q1
M
N
P
R
NC
NC
D17
NC
VSS
VSS
NC
D0
NC
A
A
C
A
A
TDO
TCK
A
A
C
A
A
TMS
Table 2. CY7C1314BV18 (512 K × 36)
1
2
3
4
5
BWS2
BWS3
A
6
7
BWS1
BWS0
A
8
9
10
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
A
B
C
D
E
F
CQ
NC/288 M NC/72 M
WPS
A
K
RPS
A
NC/36 M NC/144 M
Q27
D27
D28
Q29
Q30
D30
DOFF
D31
Q32
Q33
D33
D34
Q35
TDO
Q18
Q28
D20
D29
Q21
D22
VREF
Q31
D32
Q24
Q34
D26
D35
TCK
D18
D19
Q19
Q20
D21
Q22
VDDQ
D23
Q23
D24
D25
Q25
Q26
A
K
D17
D16
Q16
Q15
D14
Q13
VDDQ
D12
Q12
D11
D10
Q10
Q9
Q17
Q7
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
A
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
D15
D6
Q14
D13
VREF
Q4
G
H
J
K
L
D3
Q11
Q1
M
N
P
R
D9
A
C
A
D0
A
A
C
A
A
A
TMS
Note
1. NC/36 M, NC/72 M, NC/144 M, and NC/288 M are not connected to the die and can be tied to any voltage level.
Document #: 38-05619 Rev. *J
Page 4 of 29
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CY7C1312BV18
CY7C1314BV18
Pin Definitions
Pin Name
I/O
Pin Description
Data Input Signals. Sampled on the rising edge of K and K clocks during valid write operations.
D[x:0]
Input-
Synchronous CY7C1312BV18 - D[17:0]
CY7C1314BV18 - D[35:0]
WPS
Input-
Write Port Select Active LOW. Sampled on the rising edge of the K clock. When asserted active, a
Synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0]
.
BWS0,
BWS1,
BWS2,
BWS3
Input-
Byte Write Select 0, 1, 2 and 3 Active LOW. Sampled on the rising edge of the K and K clocks during
Synchronous write operations. Used to select which byte is written into the device during the current portion of the write
operations. Bytes not written remain unaltered.
CY7C1312BV18 BWS0 controls D[8:0], BWS1 controls D[17:9]
.
CY7C1314BV18BWS0 controls D[8:0], BWS1 controls D[17:9],BWS2 controls D[26:18] and BWS3 controls
D[35:27].
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and it is not written into the device.
A
Input-
Address Inputs. Sampled on the rising edge of the K (Read address) and K (Write address) clocks during
Synchronous active read and write operations. These address inputs are multiplexed for both read and write operations.
Internally, the device is organized as 1 M × 18 (2 arrays each of 512 K × 18) for CY7C1312BV18 and 512
K × 36 (2 arrays each of 256 K × 36) for CY7C1314BV18. Therefore, only 19 address inputs are needed
to access the entire memory array of CY7C1312BV18 and 18 address inputs for CY7C1314BV18. These
inputs are ignored when the appropriate port is deselected.
Q[x:0]
Outputs-
Data Output Signals. These pins drive out the requested data during a read operation. Valid data is
Synchronous driven out on the rising edge of both the C and C clocks during read operations, or K and K when in single
clock mode. When the read port is deselected, Q[x:0] are automatically tri-stated.
CY7C1312BV18 Q[17:0]
CY7C1314BV18 Q[35:0]
RPS
Input-
Read Port Select Active LOW. Sampled on the rising edge of positive input clock (K). When active, a
Synchronous read operation is initiated. Deasserting deselects the read port. When deselected, the pending access is
allowed to complete and the output drivers are automatically tri-stated following the next rising edge of
the C clock. Each read access consists of a burst of two sequential transfers.
C
C
K
Input Clock
Input Clock
Input Clock
Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board back
to the controller. See Application Example on page 8 for further details.
Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board back
to the controller. See Application Example on page 8 for further details.
Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising
edge of K.
K
Input Clock
Echo Clock
Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and
to drive out data through Q[x:0] when in single clock mode.
CQ
CQ Referenced with Respect to C. This is a free - running clock and is synchronized to the Input clock
for output data (C) of the QDR II. In the single clock mode, CQ is generated with respect to K. The timings
for the echo clocks is shown in the Switching Characteristics on page 22.
CQ
ZQ
CQ Referenced with Respect to C. This is a free - running clock and is synchronized to the Input clock
for output data (C) of the QDR II. In the single clock mode, CQ is generated with respect to K. The timings
for the echo clocks is shown in the Switching Characteristics on page 22.
Echo Clock
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus
impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected
between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which enables the
minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
Document #: 38-05619 Rev. *J
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CY7C1312BV18
CY7C1314BV18
Pin Definitions (continued)
Pin Name
I/O
Pin Description
DOFF
Input
DLL Turn Off Active LOW. Connecting this pin to ground turns off the DLL inside the device. The timing
in the DLL turned off operation differs from those listed in this data sheet.
TDO
TCK
TDI
Output
Input
Input
Input
N/A
TDO for JTAG.
TCK Pin for JTAG.
TDI Pin for JTAG.
TMS
NC
TMS Pin for JTAG.
Not Connected to the Die. Can be tied to any voltage level.
Not Connected to the Die. Can be tied to any voltage level.
Not Connected to the Die. Can be tied to any voltage level.
Not Connected to the Die. Can be tied to any voltage level.
Not Connected to the Die. Can be tied to any voltage level.
NC/36M N/A
NC/72M N/A
NC/144M N/A
NC/288M N/A
VREF
Input-
Reference
Reference Voltage Input. Static input used to set the reference level for HSTL inputs, Outputs, and AC
measurement points.
VDD
VSS
Power Supply Power Supply Inputs to the Core of the Device.
Ground Ground for the Device.
Power Supply Power Supply Inputs for the Outputs of the Device.
VDDQ
Document #: 38-05619 Rev. *J
Page 6 of 29
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CY7C1312BV18
CY7C1314BV18
Functional Overview
The CY7C1312BV18, and CY7C1314BV18 are synchronous
pipelined Burst SRAMs equipped with a read port and a write
port. The read port is dedicated to read operations and the write
port is dedicated to write operations. Data flows into the SRAM
through the write port and flows out through the read port. These
devices multiplex the address inputs to minimize the number of
address pins required. By having separate read and write ports,
the QDR II completely eliminates the need to turn around the
data bus and avoids any possible data contention, thereby
simplifying system design. Each access consists of two 18-bit
data transfers in the case of CY7C1312BV18, and two 36-bit
data transfers in the case of CY7C1314BV18 in one clock cycle.
lower 18-bit write data register, provided BWS[1:0] are both
asserted active. On the subsequent rising edge of the negative
input clock (K), the address is latched and the information
presented to D[17:0] is stored into the write data register, provided
BWS[1:0] are both asserted active. The 36-bits of data are then
written into the memory array at the specified location. When
deselected, the write port ignores all inputs after completion of
pending write operations.
Byte Write Operations
Byte write operations are supported by the CY7C1312BV18.
A write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS0 and
BWS1, which are sampled with each 18-bit data word. Asserting
the appropriate Byte Write Select input during the data portion of
a write latches the data being presented and writes it into the
device. Deasserting the Byte Write Select input during the data
portion of a write allows the data stored in the device for that byte
to remain unaltered. This feature can be used to simplify read,
modify, or write operations to a byte write operation.
Accesses for both ports are initiated on the rising edge of the
positive input clock (K). All synchronous input timing is
referenced from the rising edge of the input clocks (K and K) and
all output timing is referenced to the rising edge of the output
clocks (C and C, or K and K when in single clock mode).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the input clocks (K and K). All synchronous data
outputs (Q[x:0]) pass through output registers controlled by the
rising edge of the output clocks (C and C, or K and K when in
single clock mode).
Single Clock Mode
The CY7C1312BV18 can be used with a single clock that
controls both the input and output registers. In this mode, the
device recognizes only a single pair of input clocks (K and K) that
control both the input and output registers. This operation is
identical to the operation if the device had zero skew between
the K/K and C/C clocks. All timing parameters remain the same
in this mode. To use this mode of operation, the user must tie C
and C HIGH at power on. This function is a strap option and not
alterable during device operation.
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass
through input registers controlled by the rising edge of the input
clocks (K and K).
CY7C1312BV18 is described in the following sections. The
same basic descriptions apply to CY7C1314BV18.
Read Operations
The CY7C1312BV18 is organized internally as two arrays of
512K x 18. Accesses are completed in a burst of two sequential
18-bit data words. Read operations are initiated by asserting
RPS active at the rising edge of the positive input clock (K). The
address is latched on the rising edge of the K clock. The address
presented to the address inputs is stored in the read address
register. Following the next K clock rise the corresponding lowest
order 18-bit word of data is driven onto the Q[17:0] using C as the
output timing reference. On the subsequent rising edge of C, the
next 18-bit data word is driven onto the Q[17:0]. The requested
data is valid 0.45 ns from the rising edge of the output clock (C
and C or K and K when in single clock mode).
Concurrent Transactions
The read and write ports on the CY7C1312BV18 operate
independently of one another. As each port latches the address
inputs on different clock edges, the user can read or write to any
location, regardless of the transaction on the other port. The user
can start reads and writes in the same clock cycle. If the ports
access the same location at the same time, the SRAM delivers
the most recent information associated with the specified
address location. This includes forwarding data from a write
cycle that was initiated on the previous K clock rise.
Synchronous internal circuitry automatically tri-states the outputs
following the next rising edge of the output clocks (C/C). This
allows for a seamless transition between devices without the
insertion of wait states in a depth expanded memory.
Depth Expansion
The CY7C1312BV18 has a port select input for each port. This
enables for easy depth expansion. Both port selects are sampled
on the rising edge of the positive input clock only (K). Each port
select input can deselect the specified port. Deselecting a port
does not affect the other port. All pending transactions (read and
write) are completed prior to the device being deselected.
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the same K clock
rise, the data presented to D[17:0] is latched and stored into the
Document #: 38-05619 Rev. *J
Page 7 of 29
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CY7C1312BV18
CY7C1314BV18
synchronized to the output clock (C/C) of the QDR II. In single
clock mode, CQ is generated with respect to K and CQ is
generated with respect to K. The timing for the echo clocks is
shown in the Switching Characteristics on page 22.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to allow the SRAM to adjust its output
driver impedance. The value of RQ must be 5x the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175 and 350 , with VDDQ = 1.5 V. The
output impedance is adjusted every 1024 cycles upon power-up
to account for drifts in supply voltage and temperature.
DLL
These chips use a DLL that is designed to function between
120 MHz and the specified maximum clock frequency. During
power-up, when the DOFF is tied HIGH, the DLL is locked after
1024 cycles of stable clock. The DLL can also be reset by
slowing or stopping the input clock K and K for a minimum of
30 ns. However, it is not necessary to reset the DLL to lock to the
desired frequency. The DLL automatically locks 1024 clock
cycles after a stable clock is presented. The DLL may be
disabled by applying ground to the DOFF pin. For information
refer to the application note, DLL Considerations in
QDRII/DDRII/QDRII+/DDRII+ – AN5062.
Echo Clocks
Echo clocks are provided on the QDR II to simplify data capture
on high-speed systems. Two echo clocks are generated by the
QDR II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free-running clocks and are
Application Example
Figure 1 shows two QDR II used in an application.
Figure 1. Application Example
SRAM #1
R = 250ohms
SRAM #2
R = 250ohms
ZQ
CQ/CQ#
Q
ZQ
CQ/CQ#
R W B
P P W
R W B
P P W
Vt
D
A
D
A
Q
S
#
S
#
S
#
S S
# #
S
#
R
C
C# K K#
C C# K K#
DATA IN
DATA OUT
Address
Vt
Vt
R
RPS#
BUS
MASTER
(CPU
or
WPS#
BWS#
CLKIN/CLKIN#
Source K
Source K#
ASIC)
Delayed K
Delayed K#
R
R = 50ohms
Vt = Vddq/2
Document #: 38-05619 Rev. *J
Page 8 of 29
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CY7C1312BV18
CY7C1314BV18
Truth Table
The truth table for CY7C1312BV18, and CY7C1314BV18 follows. [2, 3, 4, 5, 6, 7]
Operation
K
RPS WPS
DQ
DQ
Write cycle:
Load address on the rising edge of K;
input write data on K and K rising edges.
L-H
X
L
L
D(A + 0) at K(t)
D(A + 1) at K(t)
Read Cycle:
L-H
X
Q(A + 0) at C(t + 1) Q(A + 1) at C(t + 2)
Load address on the rising edge of K;
wait one and a half cycle; read data on C and C rising edges.
NOP: No operation
L-H
H
X
H
X
D = X
Q = High Z
D = X
Q = High Z
Standby: Clock stopped
Stopped
Previous state
Previous state
Write Cycle Descriptions
The write cycle description table for CY7C1312BV18 follows. [2, 8]
BWS0 BWS1
K
Comments
K
L
L
L–H
–
During the data portion of a write sequence
Both bytes (D[17:0]) are written into the device.
L
L
–
L–H
–
L-H During the data portion of a write sequence
Both bytes (D[17:0]) are written into the device.
L
H
H
L
–
During the data portion of a write sequence
Only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L
L–H During the data portion of a write sequence
Only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
H
H
L–H
–
–
During the data portion of a write sequence
Only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
L
L–H During the data portion of a write sequence
Only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
H
H
H
H
L–H
–
–
No data is written into the devices during this portion of a write operation.
L–H No data is written into the devices during this portion of a write operation.
Notes
2. X = “Do not Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
3. Device powers up deselected with the outputs in a tri-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst.
5. “t” represents the cycle at which a Read/Write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically.
8. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. BWS , BWS , BWS and BWS can be altered on different portions
0
1
2,
3
of a write cycle, as long as the setup and hold requirements are achieved.
Document #: 38-05619 Rev. *J
Page 9 of 29
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CY7C1312BV18
CY7C1314BV18
Write Cycle Descriptions
The write cycle description table for CY7C1314BV18 follows. [9, 10]
BWS0 BWS1 BWS2 BWS3
K
K
Comments
L
L
L
L
L–H
–
During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
L
L
L
–
L–H
–
L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
H
H
L
H
H
H
H
L
H
H
H
H
H
H
L
–
During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L
L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
H
H
H
H
H
H
L–H
–
–
During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
L
L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
H
H
H
H
L–H
–
–
During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
L
L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
H
H
L–H
–
–
During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
L
L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
H
H
H
H
H
H
H
H
L–H
–
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Notes
9. X = “Do not Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
10. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. BWS , BWS , BWS and BWS can be altered on different portions
0
1
2,
3
of a write cycle, as long as the setup and hold requirements are achieved.
Document #: 38-05619 Rev. *J
Page 10 of 29
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CY7C1312BV18
CY7C1314BV18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan Test Access
Port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-1900. The TAP operates using JEDEC
standard 1.8 V I/O logic levels.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in on page 14. Upon power-up, the
instruction register is loaded with the IDCODE instruction. It is
also loaded with the IDCODE instruction if the controller is placed
in a reset state, as described in the previous section.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may
alternatively be connected to VDD through a pull-up resistor. TDO
must be left unconnected. Upon power-up, the device comes up
in a reset state, which does not interfere with the operation of the
device.
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (VSS) when
the BYPASS instruction is executed.
Test Access Port—Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Boundary Scan Register
Test Mode Select (TMS)
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up
internally, resulting in a logic HIGH level.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see the TAP Controller State
Diagram on page 13. TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
The Boundary Scan Order on page 17 shows the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Identification (ID) Register
Test Data-Out (TDO)
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 16.
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see Instruction Codes on page 16).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This Reset does not affect the operation of the
SRAM and can be performed while the SRAM is operating. At
power-up, the TAP is reset internally to ensure that TDO comes
up in a high Z state.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction
Codes on page 16. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in this section in detail.
TAP Registers
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Document #: 38-05619 Rev. *J
Page 11 of 29
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CY7C1312BV18
CY7C1314BV18
IDCODE
PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.
The IDCODE instruction loads a vendor-specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
power-up or whenever the TAP controller is supplied a
Test-Logic-Reset state.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
SAMPLE Z
The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a high Z state until the next command is supplied during the
Update IR state.
EXTEST
The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.
EXTEST OUTPUT BUS TRI-STATE
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tri-state mode.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output undergoes a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This does not harm the device, but
there is no guarantee as to the value that is captured.
Repeatable results may not be possible.
The boundary scan register has a special bit located at bit #47.
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a
high Z condition.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus hold
times (tCS and tCH). The SRAM clock input might not be captured
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that cell,
during the Shift-DR state. During Update-DR, the value loaded
into that shift-register cell latches into the preload register. When
the EXTEST instruction is entered, this bit directly controls the
output Q-bus pins. Note that this bit is pre-set LOW to enable the
output when the device is powered-up, and also when the TAP
controller is in the Test-Logic-Reset state.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Document #: 38-05619 Rev. *J
Page 12 of 29
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CY7C1312BV18
CY7C1314BV18
TAP Controller State Diagram
The state diagram for the TAP controller follows. [11]
TEST-LOGIC
1
RESET
0
1
1
1
SELECT
TEST-LOGIC/
SELECT
0
IR-SCAN
IDLE
DR-SCAN
0
0
1
1
CAPTURE-DR
0
CAPTURE-IR
0
0
0
1
SHIFT-DR
1
SHIFT-IR
1
1
0
EXIT1-DR
0
EXIT1-IR
0
0
PAUSE-DR
1
PAUSE-IR
1
0
0
EXIT2-DR
1
EXIT2-IR
1
UPDATE-IR
0
UPDATE-DR
1
1
0
Note
11. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document #: 38-05619 Rev. *J
Page 13 of 29
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CY7C1312BV18
CY7C1314BV18
TAP Controller Block Diagram
0
Bypass Register
2
1
1
1
0
0
0
Selection
TDI
Selection
TDO
Instruction Register
Circuitry
Circuitry
31 30
29
.
.
2
Identification Register
.
106
.
.
.
2
Boundary Scan Register
TCK
TMS
TAP Controller
TAP Electrical Characteristics
Over the Operating Range [12, 13, 14]
Parameter
VOH1
Description
Test Conditions
IOH =2.0 mA
IOH =100 A
IOL = 2.0 mA
Min
1.4
1.6
–
Max
–
Unit
Output HIGH voltage
Output HIGH voltage
Output LOW voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
V
V
VOH2
VOL1
VOL2
VIH
–
0.4
0.2
V
IOL = 100 A
–
V
0.65 VDD VDD + 0.3
V
VIL
–0.3
–5
0.35 VDD
5
V
IX
Input and output load current
GND VI VDD
A
Notes
12. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
13. Overshoot: V (AC) < V + 0.85 V (Pulse width less than t /2).
/2), Undershoot: V (AC) > 1.5 V (Pulse width less than t
IH
DDQ
CYC
IL
CYC
14. All Voltage referenced to Ground.
Document #: 38-05619 Rev. *J
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CY7C1312BV18
CY7C1314BV18
TAP AC Switching Characteristics
Over the Operating Range [15, 16]
Parameter
Description
Min
50
–
Max
–
Unit
ns
tTCYC
TCK clock cycle time
TCK clock frequency
TCK clock HIGH
tTF
20
–
MHz
ns
tTH
20
20
tTL
TCK clock LOW
–
ns
Setup Times
tTMSS
tTDIS
TMS setup to TCK clock rise
TDI setup to TCK clock rise
Capture setup to TCK rise
5
5
5
–
–
–
ns
ns
ns
tCS
Hold Times
tTMSH
tTDIH
TMS hold after TCK clock rise
TDI hold after clock rise
5
5
5
–
–
–
ns
ns
ns
tCH
Capture hold after clock rise
Output Times
tTDOV
tTDOX
TCK clock LOW to TDO valid
TCK clock LOW to TDO invalid
–
0
10
–
ns
ns
TAP Timing and Test Conditions
Figure 2 shows the TAP timing and test conditions. [16]
Figure 2. TAP Timing and Test Conditions
0.9 V
50
All input pulses
0.9 V
1.8 V
TDO
0 V
Z = 50
0
C = 20 pF
L
t
TL
t
TH
GND
(a)
Test Clock
TCK
t
TCYC
t
TMSH
t
TMSS
Test Mode Select
TMS
t
TDIS
t
TDIH
Test Data In
TDI
Test Data Out
TDO
t
TDOV
t
TDOX
Notes
15. t and t refer to the setup and hold time requirements of latching data from the boundary scan register.
CS
CH
16. Test conditions are specified using the load in TAP AC Test Conditions. t /t = 1 ns.
R
F
Document #: 38-05619 Rev. *J
Page 15 of 29
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CY7C1312BV18
CY7C1314BV18
Identification Register Definitions
Value
Instruction Field
Description
CY7C1312BV18
CY7C1314BV18
000
Revision Number (31:29)
Cypress Device ID (28:12)
Cypress JEDEC ID (11:1)
000
Version number.
11010011010010101
00000110100
11010011010100101
00000110100
Defines the type of SRAM.
Allows unique identification of
SRAM vendor.
ID Register Presence (0)
1
1
Indicates the presence of an
ID register.
Scan Register Sizes
Register Name
Bit Size
Instruction
Bypass
3
1
ID
32
107
Boundary Scan
Instruction Codes
Instruction
EXTEST
Code
000
Description
Captures the input and output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the
register between TDI and TDO. This operation does not affect
SRAM operation.
SAMPLE Z
010
Captures the input and output contents. Places the boundary scan
register between TDI and TDO. Forces all SRAM output drivers to
a High Z state.
RESERVED
011
100
Do not use: This instruction is reserved for future use.
SAMPLE/PRELOAD
Captures the input and output ring contents. Places the boundary
scan register between TDI and TDO. Does not affect the SRAM
operation.
RESERVED
RESERVED
BYPASS
101
110
111
Do not use: This instruction is reserved for future use.
Do not use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation
does not affect SRAM operation.
Document #: 38-05619 Rev. *J
Page 16 of 29
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CY7C1312BV18
CY7C1314BV18
Boundary Scan Order
Bit #
0
Bump ID
6R
Bit #
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
Bump ID
11H
10G
9G
Bit #
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
Bump ID
7B
6B
6A
5B
5A
4A
5C
4B
3A
1H
1A
2B
3B
1C
1B
3D
3C
1D
2C
3E
2D
2E
1E
2F
Bit #
81
Bump ID
3G
2G
1J
1
6P
82
2
6N
83
3
7P
11F
11G
9F
84
2J
4
7N
85
3K
3J
5
7R
86
6
8R
10F
11E
10E
10D
9E
87
2K
1K
2L
7
8P
88
8
9R
89
9
11P
10P
10N
9P
90
3L
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
91
1M
1L
10C
11D
9C
92
93
3N
3M
1N
2M
3P
2N
2P
1P
3R
4R
4P
5P
5N
5R
10M
11N
9M
94
9D
95
11B
11C
9B
96
9N
97
11L
11M
9L
98
10B
11A
Internal
9A
99
100
101
102
103
104
105
106
10L
11K
10K
9J
8B
7C
9K
6C
3F
10J
11J
8A
1G
1F
7A
Document #: 38-05619 Rev. *J
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CY7C1312BV18
CY7C1314BV18
Power-up Sequence in QDR II SRAM
QDR II SRAMs must be powered-up and initialized in a
predefined manner to prevent undefined operations.
DLL Constraints
■ DLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as tKC Var
.
Power-up Sequence
■ The DLL functions at frequencies down to 120 MHz.
■ Apply power and drive DOFF either HIGH or LOW (all other
inputs can be HIGH or LOW).
■ If the input clock is unstable and the DLL is enabled, then the
DLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide1024 cycles stable clock
to relock to the desired clock frequency.
❐ Apply VDD before VDDQ
.
❐ Apply VDDQ before VREF or at the same time as VREF
❐ Drive DOFF HIGH.
.
■ Provide stable DOFF (HIGH), power and clock (K, K) for 1024
cycles to lock the DLL.
Figure 3. Power-up Waveforms
K
K
Unstable Clock
> 1024 Stable clock
Stable)
DDQ
Start Normal
Operation
/
V
Clock Start (Clock Starts after V
DD
Stable (< +/- 0.1V DC per 50ns )
/
/
V
VDDQ
V
VDD
DD
DDQ
Fix High (or tie to V
)
DDQ
DOFF
Document #: 38-05619 Rev. *J
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CY7C1312BV18
CY7C1314BV18
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Neutron Soft Error Immunity
Parame-
ter
Test
Conditions
Description
Typ Max* Unit
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with power applied . –55 °C to +125 °C
Supply voltage on VDD relative to GND........–0.5 V to +2.9 V
Supply voltage on VDDQ relative to GND....... –0.5 V to +VDD
DC applied to outputs in high Z ........–0.5 V to VDDQ + 0.3 V
DC input voltage [17] ............................–0.5 V to VDD + 0.3 V
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage (MIL-STD-883, M. 3015).. > 2001 V
Latch-up current .................................................... > 200 mA
LSBU
LMBU
SEL
Logical
single-bit
upsets
25 °C
320 368
FIT/
Mb
Logical
multi-bit
upsets
25 °C
85 °C
0
0
0.01 FIT/
Mb
Single event
latch-up
0.1
FIT/
Dev
* No LMBU or SEL events occurred during testing; this column represents a
2
statistical , 95% confidence limit calculation. For more details refer to
Application Note, Accelerated Neutron SER Testing and Calculation of
Terrestrial Failure Rates – AN54908.
Operating Range
Ambient
[18]
[18]
Range
Commercial
Industrial
Temperature (TA)
VDD
1.8 ± 0.1 V
VDDQ
0 °C to +70 °C
1.4 V to
VDD
–40 °C to +85 °C
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range [19]
Parameter
VDD
Description
Power supply voltage
I/O supply voltage
Test Conditions
Min
1.7
Typ
1.8
1.5
–
Max
Unit
V
1.9
VDDQ
VOH
1.4
VDD
VDDQ/2 + 0.12
VDDQ/2 + 0.12
VDDQ
V
Output HIGH voltage
Output LOW voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
Note 20
Note 21
VDDQ/2 – 0.12
VDDQ/2 – 0.12
VDDQ – 0.2
VSS
V
VOL
–
V
VOH(LOW)
VOL(LOW)
VIH
IOH =0.1 mA, nominal impedance
–
V
IOL = 0.1 mA, nominal impedance
–
0.2
V
VREF + 0.1
–0.3
–
VDDQ + 0.3
VREF – 0.1
5
V
VIL
–
V
IX
GND VI VDDQ
5
–
A
A
V
IOZ
GND VI VDDQ, output disabled
5
–
5
VREF
Input reference voltage [22] Typical Value = 0.75 V
0.68
0.75
0.95
Notes
17. Overshoot: V (AC) < V
18. Power-up: Assumes a linear ramp from 0V to V (min) within 200 ms. During this time V < V and V
+ 0.85 V (Pulse width less than t
/2), Undershoot: V (AC) > 1.5 V (Pulse width less than t
/2).
IH
DDQ
CYC
IL
CYC
< V
.
DD
IH
DD
DDQ
DD
19. All Voltage referenced to Ground.
20. Output are impedance controlled. I = (V
/2)/(RQ/5) for values of 175 ohms RQ 350 ohms.
DDQ
DDQ
OH
21. Output are impedance controlled. I = (V
/2)/(RQ/5) for values of 175 ohms RQ 350 ohms.
OL
22. V
(min) = 0.68 V or 0.46 V
, whichever is larger, V
(max) = 0.95 V or 0.54 V
, whichever is smaller.
DDQ
REF
DDQ
REF
Document #: 38-05619 Rev. *J
Page 19 of 29
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CY7C1312BV18
CY7C1314BV18
Electrical Characteristics (continued)
DC Electrical Characteristics
Over the Operating Range [19]
Parameter
Description
Test Conditions
250 MHz (x18)
Min
–
Typ
–
Max
800
900
675
750
600
650
400
450
380
400
360
370
Unit
[23]
IDD
VDD operating supply
VDD = Max,
OUT = 0 mA,
f = fMAX = 1/tCYC
mA
I
(x36)
200 MHz (x18)
(x36)
–
–
–
–
–
–
167 MHz (x18)
(x36)
–
–
–
–
ISB1
Automatic power-down
current
Max VDD
,
250 MHz (x18)
(x36)
–
–
mA
both ports deselected,
–
–
VIN VIH or VIN VIL
f = fMAX = 1/tCYC
inputs static
,
200 MHz (x18)
(x36)
–
–
–
–
167 MHz (x18)
(x36)
–
–
–
–
AC Electrical Characteristics
Over the Operating Range [24]
Parameter
Description
Input HIGH voltage
Input LOW voltage
Test Conditions
Min
VREF + 0.2
–
Typ
–
Max
–
Unit
V
VIH
VIL
–
VREF – 0.2
V
Notes
23. The operation current is calculated with 50% read cycle and 50% write cycle.
24. Overshoot: V (AC) < V + 0.85 V (Pulse width less than t
/2), Undershoot: V (AC) > 1.5 V (Pulse width less than t
/2).
CYC
IH
DDQ
CYC
IL
Document #: 38-05619 Rev. *J
Page 20 of 29
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CY7C1312BV18
CY7C1314BV18
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
CIN
Description
Input capacitance
Test Conditions
Max
Unit
pF
TA = 25 C, f = 1 MHz, VDD = 1.8 V, VDDQ = 1.5 V
5
6
7
CCLK
Clock input capacitance
Output capacitance
pF
CO
pF
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
165 FBGA
Package
Parameter
Description
Thermal resistance
Test Conditions
Unit
JA
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
18.7
°C/W
(junction to ambient)
JC
Thermal resistance
(junction to case)
4.5
°C/W
Figure 4. AC Test Loads and Waveforms
VREF = 0.75 V
0.75 V
VREF
VREF
0.75 V
R = 50
OUTPUT
[25]
All input pulses
0.75 V
Z = 50
0
OUTPUT
1.25 V
Device
Under
Test
R = 50
L
Device
Under
0.25 V
5 pF
VREF = 0.75 V
Slew Rate = 2 V/ns
ZQ
Test
ZQ
RQ =
RQ =
250
(b)
250
Including
JIG and
scope
(a)
Note
25. Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , V
= 1.5 V, input
DDQ
pulse levels of 0.25 V to 1.25 V, and output loading of the specified I /I and load capacitance shown in (a) of AC Test Loads and Waveforms.
OL OH
Document #: 38-05619 Rev. *J
Page 21 of 29
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CY7C1312BV18
CY7C1314BV18
Switching Characteristics
Over the Operating Range [26, 27]
250 MHz
200 MHz
167 MHz
Cypress Consortium
Parameter Parameter
Description
Unit
Min Max Min Max Min Max
tPOWER
tCYC
tKH
VDD(Typical) to the first access [28]
K clock and C clock cycle time
Input clock (K/K and C/C) HIGH
Input clock (K/K and C/C) LOW
1
–
1
–
1
–
ms
ns
ns
ns
ns
tKHKH
tKHKL
tKLKH
tKHKH
4.0 8.4 5.0 8.4 6.0 8.4
1.6
1.6
1.8
–
–
–
2.0
2.0
2.2
–
–
–
2.4
2.4
2.7
–
–
–
tKL
tKHKH
K clock rise to K clock rise and C to C rise
(rising edge to rising edge)
tKHCH
tKHCH
K/K clock rise to C/C clock rise (rising edge to rising edge)
0
1.8
0
2.2
0
2.7
ns
Setup Times
tSA
tAVKH
tIVKH
tIVKH
Address setup to K clock rise
0.35
0.35
0.35
–
–
–
0.4
0.4
0.4
–
–
–
0.5
0.5
0.5
–
–
–
ns
ns
ns
tSC
Control setup to K clock rise (RPS, WPS)
tSCDDR
DDR control setup to clock (K/K) rise
(BWS0, BWS1, BWS3, BWS4)
tSD
tDVKH
D[X:0] setup to clock (K/K) rise
0.35
–
0.4
–
0.5
–
ns
Hold Times
tHA
tKHAX
tKHIX
tKHIX
Address hold after K clock rise
0.35
0.35
0.35
–
–
–
0.4
0.4
0.4
–
–
–
0.5
0.5
0.5
–
–
–
ns
ns
ns
tHC
Control hold after K clock rise (RPS, WPS)
tHCDDR
DDR control hold after clock (K/K) rise
(BWS0, BWS1, BWS3, BWS4)
tHD
tKHDX
D[X:0] hold after clock (K/K) rise
0.35
–
0.4
–
0.5
–
ns
Output Times
tCO
tCHQV
C/C clock rise (or K/K in single clock mode) to data valid
–
0.45
–
–
0.45
–
–
0.50
–
ns
ns
tDOH
tCHQX
Data output hold after output C/C clock rise
(active to active)
–0.45
–0.45
–0.50
tCCQO
tCQOH
tCQD
tCHCQV
tCHCQX
tCQHQV
tCQHQX
tCHQZ
C/C clock rise to echo clock valid
Echo clock hold after C/C clock rise
Echo clock high to data valid
–
0.45
–
–
0.45
–
–
–0.50
–
0.50
–
ns
ns
ns
ns
ns
ns
–0.45
–
–0.45
–
0.30
–
0.35
–
0.40
–
tCQDOH
tCHZ
Echo clock high to data invalid
–0.30
–
–0.35
–
–0.40
–
Clock (C/C) rise to high Z (active to high Z) [29, 30]
Clock (C/C) rise to low Z [29, 30]
0.45
–
0.45
–
0.50
–
tCLZ
tCHQX1
–0.45
–0.45
–0.50
DLL Timing
tKC Var tKC Var
tKC lock tKC lock
Clock phase jitter
–
0.20
–
–
0.20
–
–
0.20
–
ns
Cycles
ns
DLL lock time (K, C)
K static to DLL reset
1024
30
1024
30
1024
30
tKC Reset tKC Reset
–
–
–
Notes
26. Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , V
= 1.5 V, input
DDQ
pulse levels of 0.25 V to 1.25 V, and output loading of the specified I /I and load capacitance shown in (a) of AC Test Loads and Waveforms.
OL OH
27. When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timing of the frequency range in which it is being
operated and outputs data with the output timings of that frequency range.
28. This part has a voltage regulator internally; t
is the time that the power is supplied above V minimum initially before a read or write operation is initiated.
DD
POWER
29. t
, t
, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads and Waveforms. Transition is measured ±100 mV from steady state voltage.
CHZ CLZ
30. At any voltage and temperature t
is less than t
and t
less than t
.
CHZ
CLZ
CHZ
CO
Document #: 38-05619 Rev. *J
Page 22 of 29
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CY7C1312BV18
CY7C1314BV18
Switching Waveforms
Figure 5. Read/Write/Deselect Sequence [31, 32, 33]
READ
WRITE
2
READ
3
WRITE
4
WRITE
6
WRITE
8
NOP
READ
NOP
7
1
5
9
10
K
t
t
KHKH
t
t
CYC
KH
KL
K
RPS
t
t
SC
HC
WPS
A
A2
A3
A4
A0
A1
A5
A6
t
t
t
t
SA HA
SA HA
D
Q
D31
t
D10
D11
D30
D50
D51
D60
D61
t
t
t
SD
HD
SD
HD
Q20
CQDOH
Q00
Q01
DOH
Q21
Q40
Q41
t
t
CLZ
t
t
CHZ
t
KHCH
t
t
KL
t
CO
CQD
t
C
C
KH
t
t
KHKH
CYC
t
KHCH
t
CCQO
t
CQOH
t
CQ
CQ
CCQO
t
CQOH
DON’T CARE
UNDEFINED
Notes
31. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.
32. Outputs are disabled (High Z) one clock cycle after a NOP.
33. In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram.
Document #: 38-05619 Rev. *J
Page 23 of 29
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CY7C1312BV18
CY7C1314BV18
Ordering Information
The table below contains only the parts that are currently available. If you don’t see what you are looking for, please contact your local
sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at
http://www.cypress.com/products
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office
closest to you, visit us at http://www.cypress.com/go/datasheet/offices
Speed
(MHz)
Package
Diagram
Operating
Range
Ordering Code
Package Type
250 CY7C1314BV18-250BZXC
200 CY7C1312BV18-200BZXC
CY7C1312BV18-200BZI
51-85180 165-ball Fine Pitch Ball Grid Array (13 × 15 × 1.4 mm) Pb-free Commercial
51-85180 165-ball Fine Pitch Ball Grid Array (13 × 15 × 1.4 mm) Pb-free Commercial
51-85180 165-ball Fine Pitch Ball Grid Array (13 × 15 × 1.4 mm)
51-85180 165-ball Fine Pitch Ball Grid Array (13 × 15 × 1.4 mm)
Industrial
Industrial
167 CY7C1312BV18-167BZI
Ordering Code Definitions
CY 7C 13XX B V18 -
XXX X
XXX
Temperature Range: X = C or I
C = Commercial; I = Industrial
Package Type: XXX = BZ or BZX
BZ = 165-ball FPBGA
BZX = 165-ball FPBGA (Pb-free)
Speed: 250 MHz / 200 MHz / 167 MHz
V18 = 1.8 V VDD
Process Technology: 90 nm errata affected
Part Identifier: 13XX = 1312 or 1314
Marketing Code: 7C = SRAMs
Company ID: CY = Cypress
Document #: 38-05619 Rev. *J
Page 24 of 29
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CY7C1312BV18
CY7C1314BV18
Package Diagram
Figure 6. 165-ball FPBGA (13 × 15 × 1.4 mm)
51-85180 *C
Document #: 38-05619 Rev. *J
Page 25 of 29
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CY7C1312BV18
CY7C1314BV18
Acronyms
Acronym
DDR
Description
double data rate
FPBGA
HSTL
JEDEC
JTAG
ODT
fine-pitch ball grid array
high-speed transceiver logic
joint electron device engineering council
joint test action group
on-die termination
phase-locked loop
quad data rate
PLL
QDR
TAP
test access port
TCK
test clock
TDO
test data out
TDI
test data in
TMS
test mode select
Document Conventions
Units of Measure
Symbol
ns
Unit of Measure
nano seconds
Volts
V
µA
mA
mm
MHz
pF
micro Amperes
milli Amperes
milli meter
Mega Hertz
pico Farad
degree Celcius
Watts
°C
W
Document #: 38-05619 Rev. *J
Page 26 of 29
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CY7C1312BV18
CY7C1314BV18
Document History Page
Document Title: CY7C1312BV18/CY7C1314BV18, 18-Mbit QDR® II SRAM Two-Word Burst Architecture
Document Number: 38-05619
Orig. of Submission
Revision
ECN
Description of Change
Change
Date
**
252474
325581
SYT
See ECN New datasheet
*A
SYT
See ECN Removed CY7C1910BV18 from the title
Included 300 MHz Speed Bin
Added Industrial Temperature Grade
Replaced TBDs for IDD and ISB1 specifications
Replaced the TBDs on the Thermal Characteristics Table to JA = 28.51 C/W and
JC = 5.91 C/W
Replaced TBDs in the Capacitance Table for the 165 FBGA Package
Changed the package diagram from BB165E (15 × 17 × 1.4 mm) to BB165D
(13 × 15 × 1.4 mm)
Added Pb-Free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per availability
*B
413997
NXR
See ECN Converted from Preliminary to Final
Added CY7C1910BV18 part number to the title
Removed 300 MHz Speed Bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901
North First Street” to “198 Champion Court”
Changed C/C Pin Description in the features section and Pin Description
Corrected Typo in Identification Register Definitions for CY7C1910BV18 on page# 16
Added power-up sequence details and waveforms
Added foot notes #15, 16, and 17 on page# 18
Replaced Three state with Tri-state
Changed the description of IX from Input Load Current to Input Leakage Current on
page# 13
Modified the IDD and ISB values
Modified test condition in Footnote #20 on page# 19 from VDDQ < VDD to
VDDQ < VDD
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
*C
*D
423334
472384
NXR
NXR
See ECN Changed the IEEE Standard # 1149.1-1900 to 1149.1-2001
Changed the Minimum Value of tSC and tHC from 0.5ns to 0.35ns for 250 MHz and
0.6 ns to 0.4 ns for 200 MHz speed bins
Changed the description of tSA from K Clock Rise to Clock (K/K) Rise
Changed the description of tSC and tHC from Clock (K and K) Rise to K Clock Rise
See ECN Modified the ZQ Definition from Alternately, this pin is connected directly to VDD to
Alternately, this pin is connected directly to VDDQ
Changed the IEEE Standard # from 1149.1-2001 to 1149.1-1900
Included Maximum Ratings for Supply Voltage on VDDQ Relative to GND
Changed the Maximum Ratings for DC Input Voltage from VDDQ to VDD
Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS, tTMSH, tTDIH, tCH
from 10 ns to 5 ns and changed tTDOV from 20 ns to 10 ns in Tap Switching Charac-
teristics.
Modified power-up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied from
–10 C to +85 C to –55 C to +125
C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the Tap Switching Characteristics.
Updated the Ordering Information Table
Document #: 38-05619 Rev. *J
Page 27 of 29
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CY7C1312BV18
CY7C1314BV18
Document History Page (continued)
Document Title: CY7C1312BV18/CY7C1314BV18, 18-Mbit QDR® II SRAM Two-Word Burst Architecture
Document Number: 38-05619
*E
*F
1274723 VKN
See ECN Corrected typo in the JTAG ID code for CY7C1910BV18
2511674 VKN/
PYRS
06/03/08
Updated Logic Block diagrams
Updated IDD/ISB specs
Added footnote# 19 related to IDD
Updated power-up sequence waveform and its description
Changed DLL minimum operating frequency from 80 MHz to 120 MHz
Changed JA spec from 28.51 to 18.7
Changed JC spec from 5.91 to 4.5
Changed tCYC maximum spec to 8.4 ns for all speed bins
Modified footnotes 21 and 28
*G
2755901 VKN
08/25/09
08/02/10
Removed x8 and x9 part number details
Included Soft Error Immunity Data
Modified Ordering Information table by including parts that are available and modified
the disclaimer for the Ordering information.
Updated Package Diagram.
*H
*I
2998771
3088678
3158296
NJY
NJY
NJY
Template update.
Package diagram update: 51-85180 – *B to *C
11/25/2010 Updated Ordering Information.
Added Units of Measure.
*J
02/02/2011 Updated Ordering Information.
Document #: 38-05619 Rev. *J
Page 28 of 29
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CY7C1312BV18
CY7C1314BV18
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
Products
Automotive
cypress.com/go/automotive
cypress.com/go/clocks
cypress.com/go/interface
cypress.com/go/powerpsoc
cypress.com/go/plc
PSoC Solutions
Clocks & Buffers
Interface
psoc.cypress.com/solutions
PSoC 1 | PSoC 3 | PSoC 5
Lighting & Power Control
Memory
cypress.com/go/memory
cypress.com/go/image
cypress.com/go/psoc
Optical & Image Sensing
PSoC
Touch Sensing
USB Controllers
Wireless/RF
cypress.com/go/touch
cypress.com/go/USB
cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2004-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 38-05619 Rev. *J
Revised February 2, 2011
Page 29 of 29
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, Hitachi, IDT, NEC, and Samsung. All product and company names mentioned in this document are
the trademarks of their respective holders.
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