CY7C1380D-200AXI [CYPRESS]
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; 18兆位（ 512K ×36 / 1M ×18 ）流水线SRAM
| 型号： | CY7C1380D-200AXI |
| 厂家： | 
CYPRESS |
| 描述： | 18-Mbit (512K x 36/1M x 18) Pipelined SRAM |
| 文件： | 总30页 (文件大小：1186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
Features
Functional Description [1]
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200, and 167 MHz
• Registered inputs and outputs for pipelined operation
• 3.3V core power supply
The
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
SRAM integrates 524,288 x 36 and 1,048,576 x 18 SRAM
cells with advanced synchronous peripheral circuitry and a
two-bit counter for internal burst operation. All synchronous
inputs are gated by registers controlled by a positive edge
triggered clock input (CLK). The synchronous inputs include
all addresses, all data inputs, address-pipelining chip enable
(CE1), depth-expansion chip enables (CE2 and CE3 [2]), burst
control inputs (ADSC, ADSP, and ADV), write enables (BWX,
and BWE), and global write (GW). Asynchronous inputs
include the output enable (OE) and the ZZ pin.
• 2.5V or 3.3V IO power supply
• Fast clock-to-output times
— 2.6 ns (for 250 MHz device)
• Provides high-performance 3-1-1-1 access rate
• User selectable burst counter supporting Intel® Pentium®
interleaved or linear burst sequences
Addresses and chip enables are registered at rising edge of
clock when address strobe processor (ADSP) or address
strobe controller (ADSC) are active. Subsequent burst
addresses can be internally generated as they are controlled
by the advance pin (ADV).
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed write cycle.This part supports byte write
operations (see Pin Definitions on page 6 and Truth Table [4,
5, 6, 7, 8] on page 9 for further details). Write cycles can be one
to two or four bytes wide as controlled by the byte write control
inputs. GW when active LOW causes all bytes to be written.
• Single cycle chip deselect
• CY7C1380D/CY7C1382D available in JEDEC-standard
Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball
FBGA package. CY7C1380F/CY7C1382F available in
Pb-free and non Pb-free 119-ball BGA package
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• ZZ sleep mode option
The
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
operates from a +3.3V core power supply while all outputs
operate with a +2.5 or +3.3V power supply. All inputs and
outputs are JEDEC-standard and JESD8-5-compatible.
Selection Guide
250 MHz
200 MHz
3.0
167 MHz
3.4
Unit
ns
Maximum Access Time
2.6
350
70
Maximum Operating Current
Maximum CMOS Standby Current
300
275
mA
mA
70
70
Notes:
1. For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com.
2. CE CE are for TQFP and 165 FBGA packages only. 119 BGA is offered only in 1 chip enable.
3,
2
Cypress Semiconductor Corporation
Document #: 38-05543 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised Feburary 07, 2007
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Logic Block Diagram – CY7C1380D/CY7C1380F [3] (512K x 36)
A0, A1, A
ADDRESS
REGISTER
2
A
[1:0]
MODE
Q1
Q0
ADV
CLK
BURST
COUNTER
AND
CLR
LOGIC
ADSC
ADSP
DQ D , DQP
BYTE
WRITE REGISTER
D
DQ D ,DQP
BYTE
WRITE DRIVER
D
BW
BW
D
DQ C , DQP
BYTE
WRITE DRIVER
C
DQ C , DQP
BYTE
C
C
OUTPUT
OUTPUT
REGISTERS
WRITE REGISTER
MEMORY
ARRAY
DQs
SENSE
AMPS
BUFFERS
E
DQP
DQP
DQP
DQP
A
DQ B , DQP
BYTE
WRITE DRIVER
B
DQ B , DQP
BYTE
WRITE REGISTER
B
B
C
D
BW
B
A
DQ A , DQP
BYTE
WRITE DRIVER
A
DQ A , DQP
BYTE
WRITE REGISTER
A
BW
BWE
INPUT
REGISTERS
GW
ENABLE
REGISTER
PIPELINED
ENABLE
CE
CE
CE
OE
1
2
3
SLEEP
CONTROL
ZZ
Logic Block Diagram – CY7C1382D/CY7C1382F [3] (1M x 18)
ADDRESS
A0, A1, A
REGISTER
2
Q1
ADV
CLK
BURST
COUNTER AND
LOGIC
ADSC
DQ B, DQP
B
DQ B, DQP
WRITE REGISTER
B
WRITE DRIVER
OUTPUT
BUFFERS
BW
BW
B
DQs
DQP
DQP
OUTPUT
SENSE
MEMORY
ARRAY
A
B
DQ A, DQP
A
DQ A, DQP
WRITE REGISTER
A
WRITE DRIVER
A
BWE
INPUT
GW
CE
CE2
ENABLE
REGISTER
1
PIPELINED
ENABLE
CE3
OE
SLEEP
CONTROL
ZZ
Note:
3. CY7C1380F and CY7C1382F have only 1 chip enable (CE ).
1
Document #: 38-05543 Rev. *E
Page 2 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Pin Configurations
100-pin TQFP Pinout (3 Chip Enable)
DQPC
1
DQP
DQ
DQ
VDDQ
VSSQ
B
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
NC
NC
NC
VDDQ
VSSQ
NC
NC
DQB
DQB
VSSQ
VDDQ
DQB
DQB
NC
VDD
NC
VSS
DQB
DQB
VDDQ
VSSQ
A
NC
NC
1
2
3
4
5
6
7
8
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQC
B
2
3
4
5
6
7
8
9
DQc
VDDQ
VSSQ
B
VDDQ
VSSQ
NC
DQP
DQ
DQ
VSSQ
VDDQ
DQ
DQC
DQC
DQC
DQC
DQ
DQ
DQ
DQ
B
B
A
B
A
B
A
9
VSSQ
VDDQ
VSSQ
VDDQ
DQB
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
DQ
C
A
DQC
DQB
DQ
A
NC
VDD
NC
VSS
NC
VDD
ZZ
DQA
DQA
VSS
NC
VDD
ZZ
DQ
DQ
VDDQ
VSSQ
DQ
DQ
NC
NC
VSSQ
VDDQ
NC
CY7C1382D
(1 Mbit x 18)
CY7C1380D
(512K X 36)
VSS
DQD
A
DQD
A
VDDQ
VSSQ
VDDQ
VSSQ
DQD
DQD
DQD
DQD
DQ
DQ
DQ
DQ
A
DQ
DQ
DQP
B
A
A
B
A
A
B
A
NC
VSSQ
VDDQ
NC
NC
NC
VSSQ
VDDQ
VSSQ
VDDQ
DQD
DQ
DQ
DQP
A
DQD
A
NC
NC
DQP
D
A
Document #: 38-05543 Rev. *E
Page 3 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Pin Configurations (continued)
119-Ball BGA
Pinout
CY7C1380F (512K x 36)
1
2
3
4
5
6
7
A
VDDQ
A
A
A
A
VDDQ
ADSP
ADSC
VDD
NC/288M
NC/144M
A
A
A
A
A
A
A
A
NC/576M
NC/1G
B
C
D
E
F
DQC
DQC
VDDQ
DQPC
DQC
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQPB
DQB
DQB
DQB
CE1
DQC
DQB
VDDQ
OE
G
H
J
DQC
DQC
VDDQ
DQD
DQC
DQC
VDD
BWC
VSS
NC
BWB
VSS
NC
DQB
DQB
VDD
DQA
DQB
DQB
VDDQ
DQA
ADV
GW
VDD
K
DQD
VSS
CLK
NC
VSS
DQD
VDDQ
DQD
DQD
DQD
DQD
DQA
DQA
DQA
DQA
VDDQ
DQA
L
M
N
BWD
VSS
VSS
BWA
VSS
VSS
BWE
A1
P
R
DQD
NC
DQPD
A
VSS
A0
VSS
NC
DQPA
A
DQA
NC
MODE
VDD
T
NC
NC/72M
TMS
A
A
A
NC/36M
NC
ZZ
U
VDDQ
TDI
TCK
TDO
VDDQ
CY7C1382F (1M x 18)
2
A
1
3
A
4
5
A
6
A
7
VDDQ
NC/576M
NC/1G
NC
A
B
C
D
E
F
VDDQ
ADSP
NC/288M
NC/144M
DQB
A
A
A
A
ADSC
VDD
A
A
A
A
NC
DQB
NC
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQPA
NC
DQA
NC
DQA
CE1
VDDQ
VDDQ
OE
G
H
J
NC
DQB
NC
VDD
NC
VSS
NC
NC
DQA
VDD
DQA
NC
VDDQ
BWB
VSS
NC
ADV
DQB
VDDQ
GW
VDD
K
NC
DQB
VDDQ
DQB
NC
DQB
NC
VSS
NC
CLK
NC
VSS
NC
DQA
NC
DQA
NC
L
M
N
P
BWA
VSS
DQB
NC
VSS
VSS
VSS
VDDQ
NC
BWE
A1
VSS
VSS
DQA
NC
DQPB
A0
DQA
NC
A
A
MODE
A
VDD
NC/36M
TCK
NC
A
A
A
NC
ZZ
R
T
NC/72M
VDDQ
U
TMS
TDI
TDO
NC
VDDQ
Document #: 38-05543 Rev. *E
Page 4 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Pin Configurations (continued)
165-Ball FBGA Pinout(3 Chip Enable)
CY7C1380D (512K x 36)
1
2
3
4
5
6
7
8
9
10
A
11
NC
NC/288M
NC/144M
DQPC
A
B
C
D
CE1
BWC
BWD
VSS
VDD
BWB
BWA
VSS
VSS
CE3
CLK
VSS
VSS
ADSC
A
BWE
GW
VSS
VSS
ADV
ADSP
VDDQ
VDDQ
A
CE2
VDDQ
VDDQ
A
NC/576M
DQPB
DQB
OE
VSS
VDD
NC
NC/1G
DQB
DQC
DQC
DQC
DQC
DQC
NC
DQC
DQC
DQC
NC
VDDQ
VDDQ
VDDQ
NC
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
DQB
DQB
DQB
NC
DQB
DQB
DQB
ZZ
E
F
G
H
J
DQD
DQD
DQD
DQD
DQD
DQD
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
DQA
DQA
DQA
DQA
DQA
DQA
K
L
DQD
DQPD
NC
DQD
NC
VDDQ
VDDQ
A
VDD
VSS
A
VSS
NC
VSS
A
VSS
NC
VDD
VSS
A
VDDQ
VDDQ
A
DQA
NC
A
DQA
DQPA
A
M
N
P
NC/72M
TDI
A1
TDO
A0
MODE NC/36M
A
A
TMS
TCK
A
A
A
A
R
CY7C1382D (1M x 18)
1
2
A
3
4
5
NC
6
7
8
9
10
A
11
A
NC/288M
NC/144M
NC
A
B
C
D
BWB
NC
CE3
CLK
VSS
VSS
CE1
CE2
BWE
GW
VSS
VSS
ADSC
OE
ADV
ADSP
VDDQ
VDDQ
NC/576M
A
BWA
VSS
VSS
A
NC
VDDQ
VDDQ
VSS
VDD
VSS
NC/1G
NC
DQPA
DQA
NC
DQB
VDD
NC
NC
DQB
DQB
DQB
NC
VDDQ
VDDQ
VDDQ
NC
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
NC
NC
DQA
DQA
DQA
ZZ
E
F
NC
NC
G
H
J
NC
NC
DQB
DQB
DQB
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
DQA
DQA
DQA
NC
NC
NC
K
L
NC
NC
DQB
DQPB
NC
NC
NC
VDDQ
VDDQ
A
VDD
VSS
A
VSS
NC
VSS
A
VSS
NC
VDD
VSS
A
VDDQ
VDDQ
A
DQA
NC
A
NC
NC
A
M
N
P
NC/72M
TDI
A1
TDO
MODE NC/36M
A
A
TMS
A0
TCK
A
A
A
A
R
Document #: 38-05543 Rev. *E
Page 5 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Pin Definitions
Name
IO
Description
A0, A1, A
Input-
Synchronous
Address inputs used to select one of the address locations. Sampled at the rising edge of
the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 [2]are sampled active. A1: A0
are fed to the two-bit counter.
.
BWA, BWB
BWC, BWD
Input-
Synchronous
Byte write select inputs, active LOW. Qualified with BWE to conduct byte writes to the SRAM.
Sampled on the rising edge of CLK.
GW
Input-
Synchronous
Global write enable input, active LOW. When asserted LOW on the rising edge of CLK, a
global write is conducted (all bytes are written, regardless of the values on BWX and BWE).
BWE
CLK
CE1
Input-
Synchronous
Byte write enable input, active LOW. Sampled on the rising edge of CLK. This signal must be
asserted LOW to conduct a byte write.
Input-
Clock
Clock input. Used to capture all synchronous inputs to the device. Also used to increment the
burst counter when ADV is asserted LOW, during a burst operation.
Input-
Synchronous
Chip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with
CE and CE to select or deselect the device. ADSP is ignored
CE is sampled
if CE1 is HIGH.
2
3
1
only when a new external address is loaded.
[2]
CE2
Input-
Synchronous
Chip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction
with CE1 and CE3 to select or deselect the device. CE2 is sampled only when a new external
address is loaded.
[2]
CE3
Input-
Synchronous
Chip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE1 and CE2 to select or deselect the device. CE3 is sampled only when a new external address
is loaded.
Input-
Asynchronous
Output enable, asynchronous input, active LOW. Controls the direction of the IO pins. When
LOW, the IO pins behave as outputs. When deasserted HIGH, IO pins are tri-stated, and act as
input data pins. OE is masked during the first clock of a read cycle when emerging from a
deselected state.
OE
ADV
Input-
Synchronous
Advance input signal, sampled on the rising edge of CLK, active LOW. When asserted, it
automatically increments the address in a burst cycle.
ADSP
Input-
Synchronous
Address strobe from processor, sampled on the rising edge of CLK, active LOW. When
asserted LOW, addresses presented to the device are captured in the address registers. A1: A0
are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is
recognized. ASDP is ignored when CE1 is deasserted HIGH.
ADSC
Input-
Synchronous
Address strobe from controller, sampled on the rising edge of CLK, active LOW. When
asserted LOW, addresses presented to the device are captured in the address registers. A1: A0
are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is
recognized.
ZZ
Input-
Asynchronous
ZZ sleep input. This active HIGH input places the device in a non-time critical sleep condition
with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ
pin has an internal pull down.
IO-
Bidirectional data IO lines. As inputs, they feed into an on-chip data register that is triggered
by the rising edge of CLK. As outputs, they deliver the data contained in the memory location
DQs, DQPX
Synchronous
specified by the addresses presented during the previous clock rise of the read cycle.
The
direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs.
When HIGH, DQs and DQPX are placed in a tri-state condition.
VDD
Power Supply Power supply inputs to the core of the device.
Document #: 38-05543 Rev. *E
Page 6 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Pin Definitions (continued)
Name
IO
Description
VSS
Ground
Ground for the core of the device.
VSSQ
VDDQ
IO Ground Ground for the IO circuitry.
IO Power
Supply
Power supply for the IO circuitry.
MODE
TDO
TDI
Input-Static Selects burst order. When tied to GND selects linear burst sequence. When tied to VDD or left
floating selects interleaved burst sequence. This is a strap pin and must remain static during
device operation. Mode pin has an internal pull up.
JTAG serial Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG
output
Synchronous
feature is not being utilized, this pin must be disconnected. This pin is not available on TQFP
packages.
JTAG serial Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is
input
Synchronous
not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on
TQFP packages.
TMS
JTAG serial Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is
input
not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on
TQFP packages.
Synchronous
TCK
NC
JTAG-
Clock
Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin must be
connected to VSS. This pin is not available on TQFP packages.
–
No Connects. 36M, 72M, 144M, 288M, 576M and 1G are address expansion pins and are not
internally connected to the die.
selection and output tri-state control. ADSP is ignored if CE1
is HIGH.
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (tCO) is 2.6 ns (250
MHz device).
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW,
(2)
CE1, CE2, CE3 are all asserted active, and (3) the write
The
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
signals (GW, BWE) are all deserted HIGH. ADSP is ignored if
supports secondary cache in systems utilizing a linear or
interleaved burst sequence. The interleaved burst order
supports Pentium® and i486™ processors. The linear burst
sequence is suited for processors that utilize a linear burst
sequence. The burst order is user selectable, and is
determined by sampling the MODE input. Accesses can be
initiated with either the processor address strobe (ADSP) or
the controller address strobe (ADSC). Address advancement
through the burst sequence is controlled by the ADV input. A
two-bit on-chip wraparound burst counter captures the first
address in a burst sequence and automatically increments the
address for the rest of the burst access.
CE1 is HIGH. The address presented to the address inputs (A)
is stored into the address advancement logic and the address
register while being presented to the memory array. The
corresponding data is allowed to propagate to the input of the
output registers. At the rising edge of the next clock the data
is allowed to propagate through the output register and onto
the data bus within 2.6 ns (250 MHz device) if OE is active
LOW. The only exception occurs when the SRAM is emerging
from a deselected state to a selected state, its outputs are
always tri-stated during the first cycle of the access. After the
first cycle of the access, the outputs are controlled by the OE
signal. Consecutive single read cycles are supported. Once
the SRAM is deselected at clock rise by the chip select and
either ADSP or ADSC signals, its output will tri-state
immediately.
Byte write operations are qualified with the byte write enable
(BWE) and byte write select (BWX) inputs. A global write
enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed write circuitry.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) CE1, CE2, CE3 are all asserted active. The address
Three synchronous chip selects (CE1, CE2, CE3) and an
asynchronous output enable (OE) provide for easy bank
Document #: 38-05543 Rev. *E
Page 7 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
presented to A is loaded into the address register and the
address advancement logic while being delivered to the
memory array. The write signals (GW, BWE, and BWX) and
ADV inputs are ignored during this first cycle.
automatically tri-stated whenever a write cycle is detected,
regardless of the state of OE.
Burst Sequences
The
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
ADSP triggered write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQs inputs is written into the
corresponding address location in the memory array. If GW is
HIGH, then the write operation is controlled by BWE and BWX
signals.
provides a two-bit wraparound counter, fed by A1: A0, that
implements an interleaved or a linear burst sequence. The
interleaved burst sequence is designed specifically to support
Intel Pentium applications. The linear burst sequence is
designed to support processors that follow a linear burst
sequence. The burst sequence is user selectable through the
MODE input.
The
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
provides byte write capability that is described in the write
cycle descriptions table. Asserting the byte write enable input
(BWE) with the selected byte write (BWX) input, will selectively
write to only the desired bytes. Bytes not selected during a
byte write operation will remain unaltered. A synchronous
self-timed write mechanism has been provided to simplify the
write operations.
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both read and write burst operations are supported.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation sleep mode. Two
clock cycles are required to enter into or exit from this sleep
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the sleep mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the sleep mode. CE1, CE2, CE3, ADSP, and ADSC must
remain inactive for the duration of tZZREC after the ZZ input
returns LOW.
The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F is a
common IO device, the output enable (OE) must be deserted
HIGH before presenting data to the DQs inputs. Doing so will
tri-state the output drivers. As a safety precaution, DQs are
automatically tri-stated whenever a write cycle is detected,
regardless of the state of OE.
Single Write Accesses Initiated by ADSC
ADSC write accesses are initiated when the following
conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP
is deserted HIGH, (3) CE1, CE2, CE3 are all asserted active,
and (4) the appropriate combination of the write inputs (GW,
BWE, and BWX) are asserted active to conduct a write to the
desired byte(s). ADSC-triggered Write accesses require a
single clock cycle to complete. The address presented to A is
loaded into the address register and the address
advancement logic while being delivered to the memory array.
The ADV input is ignored during this cycle. If a global write is
conducted, the data presented to the DQs is written into the
corresponding address location in the memory core. If a byte
write is conducted, only the selected bytes are written. Bytes
not selected during a byte write operation will remain
unaltered. A synchronous self-timed write mechanism has
been provided to simplify the write operations.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Linear Burst Address Table (MODE = GND)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F is a
common IO device, the output enable (OE) must be deserted
HIGH before presenting data to the DQs inputs. Doing so will
tri-state the output drivers. As a safety precaution, DQs are
ZZ Mode Electrical Characteristics
Parameter
IDDZZ
Description
Sleep mode standby current
Device operation to ZZ
Test Conditions
ZZ > VDD – 0.2V
Min.
Max.
Unit
mA
ns
80
tZZS
ZZ > VDD – 0.2V
2tCYC
tZZREC
tZZI
ZZ recovery time
ZZ < 0.2V
2tCYC
0
ns
ZZ Active to sleep current
ZZ Inactive to exit sleep current
This parameter is sampled
This parameter is sampled
2tCYC
ns
tRZZI
ns
Document #: 38-05543 Rev. *E
Page 8 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Truth Table [4, 5, 6, 7, 8]
Operation
Add. Used CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK
DQ
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Sleep Mode, Power Down
READ Cycle, Begin Burst
READ Cycle, Begin Burst
WRITE Cycle, Begin Burst
READ Cycle, Begin Burst
READ Cycle, Begin Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
WRITE Cycle, Continue Burst
WRITE Cycle, Continue Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
WRITE Cycle, Suspend Burst
WRITE Cycle, Suspend Burst
None
None
H
L
X
L
X
X
H
X
H
X
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
L
L
X
X
L
X
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
L
L-H Tri-State
L-H Tri-State
L-H Tri-State
L-H Tri-State
L-H Tri-State
None
L
X
L
L
None
L
H
H
X
L
None
L
X
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
L
None
X
L
X
X
X
L
X
Tri-State
Q
External
External
External
External
External
Next
L-H
L
L
L
H
X
L
L-H Tri-State
L
L
H
H
H
H
H
X
X
H
X
H
H
X
X
H
X
L-H
L-H
D
Q
L
L
L
H
H
H
H
H
H
L
L
L
L
H
L
L-H Tri-State
L-H
L-H Tri-State
L-H
L-H Tri-State
X
X
H
H
X
H
X
X
H
H
X
H
X
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
Q
Next
L
H
L
Next
L
Q
Next
L
H
X
X
L
Next
L
L-H
L-H
L-H
D
D
Q
Next
L
L
Current
Current
Current
Current
Current
Current
H
H
H
H
H
H
H
H
H
H
L
H
L
L-H Tri-State
L-H
L-H Tri-State
Q
H
X
X
L-H
L-H
D
D
L
Notes:
4. X = Don't Care, H = Logic HIGH, L = Logic LOW.
5. WRITE = L when any one or more byte write enable signals, and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H.
6. The DQ pins are controlled by the current cycle and the signal. is asynchronous and is not sampled with the clock.
OE
OE
must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state.
7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW . Writes may occur only on subsequent clocks
X
after the
or with the assertion of
. As a result,
is a
ADSC
OE
OE
ADSP
don't care for the remainder of the write cycle.
8.
is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when
is
OE
OE
.
is active (LOW)
inactive or when the device is deselected, and all data bits behave as output when
OE
Document #: 38-05543 Rev. *E
Page 9 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Truth Table for Read/Write [4, 9]
Function (CY7C1380D/CY7C1380F)
Read
GW
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
BWE
H
L
BWD
X
H
H
H
H
H
H
H
H
L
BWC
X
H
H
H
H
L
BWB
X
H
H
L
BWA
X
H
L
Read
Write Byte A – (DQA and DQPA)
Write Byte B – (DQB and DQPB)
Write Bytes B, A
L
L
H
L
L
L
Write Byte C – (DQC and DQPC)
Write Bytes C, A
L
H
H
L
H
L
L
L
Write Bytes C, B
L
L
H
L
Write Bytes C, B, A
Write Byte D – (DQD and DQPD)
Write Bytes D, A
L
L
L
L
H
H
H
H
L
H
H
L
H
L
L
L
Write Bytes D, B
L
L
H
L
Write Bytes D, B, A
Write Bytes D, C
L
L
L
L
L
H
H
L
H
L
Write Bytes D, C, A
Write Bytes D, C, B
Write All Bytes
L
L
L
L
L
L
H
L
L
L
L
L
Write All Bytes
X
X
X
X
X
Truth Table for Read/Write [4, 9]
Function (CY7C1382D/CY7C1382F)
GW
H
BWE
BWB
X
BWA
Read
H
L
L
L
L
L
X
X
H
L
Read
H
H
Write Byte A – (DQA and DQPA)
Write Byte B – (DQB and DQPB)
Write Bytes B, A
Write All Bytes
H
H
H
L
H
L
H
L
H
L
L
Write All Bytes
L
X
X
Note:
9. Table only lists a partial listing of the byte write combinations. Any combination of BW is valid. Appropriate write will be done based on which byte write is active.
X
Document #: 38-05543 Rev. *E
Page 10 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Test Data-In (TDI)
IEEE 1149.1 Serial Boundary Scan (JTAG)
The TDI ball is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. TDI
is internally pulled up and can be unconnected if the TAP is
unused in an application. TDI is connected to the most
significant bit (MSB) of any register. (See TAP Controller Block
Diagram.)
The CY7C1380D/CY7C1382D incorporates a serial boundary
scan test access port (TAP).This part is fully compliant with
1149.1. The TAP operates using JEDEC-standard 3.3V or
2.5V IO logic levels.
The CY7C1380D/CY7C1382D contains a TAP controller,
instruction register, boundary scan register, bypass register,
and ID register.
Disabling the JTAG Feature
Test Data-Out (TDO)
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may
alternately be connected to VDD through a pull up resistor.
TDO must be left unconnected. Upon power up, the device will
come up in a reset state which will not interfere with the
operation of the device.
The TDO output ball is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine. The output changes on the
falling edge of TCK. TDO is connected to the least significant
bit (LSB) of any register. (See TAP Controller State Diagram.)
TAP Controller Block Diagram
0
TAP Controller State Diagram
Bypass Register
TEST-LOGIC
1
2
1
0
0
0
RESET
0
Selection
Circuitry
Instruction Register
31 30 29
Identification Register
election
S
TDI
TDO
1
1
1
RUN-TEST/
IDLE
SELECT
DR-SCAN
SELECT
IR-SCAN
0
Circuitr
y
.
.
. 2 1
0
0
1
1
CAPTURE-DR
CAPTURE-IR
x
.
.
.
.
. 2 1
0
0
Boundary Scan Register
SHIFT-DR
0
SHIFT-IR
0
1
1
1
1
EXIT1-DR
EXIT1-IR
TCK
TMS
TAP CONTROLLER
0
0
PAUSE-DR
1
0
PAUSE-IR
1
0
0
0
Performing a TAP Reset
EXIT2-DR
1
EXIT2-IR
1
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This Reset does not affect the operation of the
SRAM and may be performed while the SRAM is operating.
UPDATE-DR
UPDATE-IR
1
0
1
0
At power up, the TAP is reset internally to ensure that TDO
comes up in a High-Z state.
TAP Registers
The 0 or 1 next to each state represents the value of TMS at
the rising edge of TCK.
Registers are connected between the TDI and TDO balls and
allow data to be scanned in and out of the SRAM test circuitry.
Only one register can be selected at a time through the
instruction register. Data is serially loaded into the TDI ball on
the rising edge of TCK. Data is output on the TDO ball on the
falling edge of TCK.
Test Access Port (TAP)
Test Clock (TCK)
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO balls as shown in the TAP Controller Block
Diagram. Upon power up, the instruction register is loaded
with the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
Test MODE SELECT (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The ball is pulled up
internally, resulting in a logic HIGH level.
Document #: 38-05543 Rev. *E
Page 11 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
When the TAP controller is in the Capture-IR state, the two
least significant bits are loaded with a binary ‘01’ pattern to
allow for fault isolation of the board-level serial test data path.
instruction register between the TDI and TDO balls and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state.
The IDCODE instruction is loaded into the instruction register
upon power up or whenever the TAP controller is given a test
logic reset state.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between the
TDI and TDO balls. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO balls when the TAP
controller is in a Shift-DR state. The SAMPLE Z command
places all SRAM outputs into a High-Z state.
Boundary Scan Register
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is
captured in the boundary scan register.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and
TDO balls when the controller is moved to the Shift-DR state.
The EXTEST, SAMPLE/PRELOAD, and SAMPLE
instructions can be used to capture the contents of the input
and output ring.
Z
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. As there is
a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output will undergo a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This will not harm the device, but
there is no guarantee as to the value that will be captured.
Repeatable results may not be possible.
The boundary scan order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions on page 15.
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture setup plus
hold times (tCS and tCH). The SRAM clock input might not be
captured correctly if there is no way in a design to stop (or
slow) the clock during a SAMPLE/PRELOAD instruction. If this
is an issue, it is still possible to capture all other signals and
simply ignore the value of the CK and CK# captured in the
boundary scan register.
TAP Instruction Set
Overview
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO pins.
Eight different instructions are possible with the three bit
instruction register. All combinations are listed in Identification
Codes on page 15. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in detail below.
PRELOAD allows an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells
prior to the selection of another boundary scan test operation.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO balls.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
The shifting of data for the SAMPLE and PRELOAD phases
can occur concurrently when required; that is, while data
captured is shifted out, the preloaded data is shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
EXTEST
The EXTEST instruction enables the preloaded data to be
driven out through the system output pins. This instruction also
selects the boundary scan register to be connected for serial
access between the TDI and TDO in the Shift-DR controller
state.
EXTEST Output Bus Tri-State
IEEE Standard 1149.1 mandates that the TAP controller be
able to put the output bus into a tri-state mode.
IDCODE
The IDCODE instruction causes a vendor-specific 32-bit code
to be loaded into the instruction register. It also places the
The boundary scan register has a special bit located at bit #85
(for 119-BGA package) or bit #89 (for 165-fBGA package).
Document #: 38-05543 Rev. *E
Page 12 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the Update-DR state in
the TAP controller, it will directly control the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it will enable the output buffers to
drive the output bus. When LOW, this bit will place the output
bus into a High-Z condition.
loaded into that shift-register cell will latch into the preload
register. When the EXTEST instruction is entered, this bit will
directly control the output Q-bus pins. Note that this bit is
preset HIGH to enable the output when the device is powered
up, and also when the TAP controller is in the Test-Logic-Reset
state.
Reserved
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that
cell, during the Shift-DR state. During Update-DR, the value
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
Test Clock
(TCK)
t
t
t
TH
CYC
TL
t
t
t
t
TMSS
TDIS
TMSH
Test Mode Select
(TMS)
TDIH
Test Data-In
(TDI)
t
TDOV
t
TDOX
Test Data-Out
(TDO)
DON’T CARE
UNDEFINED
TAP AC Switching Characteristics Over the Operating Range [10, 11]
Parameter
Clock
tTCYC
tTF
Description
Min.
Max.
Unit
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH time
TCK Clock LOW time
50
ns
MHz
ns
20
tTH
20
20
tTL
ns
Output Times
tTDOV
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
10
ns
ns
tTDOX
0
Setup Times
tTMSS
TMS Setup to TCK Clock Rise
TDI Setup to TCK Clock Rise
Capture Setup to TCK Rise
5
5
5
ns
ns
ns
tTDIS
tCS
Hold Times
tTMSH
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
5
5
5
ns
ns
ns
tTDIH
tCH
Capture Hold after Clock Rise
Notes:
10. t and t refer to the setup and hold time requirements of latching data from the boundary scan register.
CS
CH
11. Test conditions are specified using the load in TAP AC test conditions. t /t = 1ns.
R
F
Document #: 38-05543 Rev. *E
Page 13 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
3.3V TAP AC Test Conditions
2.5V TAP AC Test Conditions
Input pulse levels.................................................VSS to 3.3V
Input rise and fall times..................... ..............................1 ns
Input timing reference levels...........................................1.5V
Output reference levels...................................................1.5V
Test load termination supply voltage...............................1.5V
Input pulse levels.................................................VSS to 2.5V
Input rise and fall time .....................................................1 ns
Input timing reference levels .................. ......................1.25V
Output reference levels .................. ..............................1.25V
Test load termination supply voltage .................... ........1.25V
3.3V TAP AC Output Load Equivalent
2.5V TAP AC Output Load Equivalent
1.5V
1.25V
50Ω
50Ω
TDO
TDO
ZO= 50 Ω
20pF
ZO= 50 Ω
20pF
TAP DC Electrical Characteristics And Operating Conditions
(0°C < TA < +70°C; VDD = 3.3V ±0.165V unless otherwise noted) [12]
Parameter
VOH1
Description
Test Conditions
Min.
2.4
2.0
2.9
2.1
Max.
Unit
V
Output HIGH Voltage IOH = –4.0 mA, VDDQ = 3.3V
IOH = –1.0 mA, VDDQ = 2.5V
V
VOH2
VOL1
VOL2
VIH
Output HIGH Voltage IOH = –100 µA
VDDQ = 3.3V
DDQ = 2.5V
VDDQ = 3.3V
DDQ = 2.5V
VDDQ = 3.3V
DDQ = 2.5V
V
V
V
Output LOW Voltage IOL = 8.0 mA
Output LOW Voltage IOL = 100 µA
Input HIGH Voltage
0.4
0.4
0.2
0.2
V
V
V
V
V
V
VDDQ = 3.3V
VDDQ = 2.5V
VDDQ = 3.3V
2.0
1.7
VDD + 0.3
V
VDD + 0.3
V
VIL
Input LOW Voltage
–0.3
–0.3
–5
0.8
0.7
5
V
VDDQ = 2.5V
V
IX
Input Load Current
GND < VIN < VDDQ
µA
Note:
12. All voltages referenced to VSS (GND).
Document #: 38-05543 Rev. *E
Page 14 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Identification Register Definitions
CY7C1380D/CY7C1380F CY7C1382D/CY7C1382F
Instruction Field
Revision Number (31:29)
Device Depth (28:24) [13]
Device Width (23:18) 119-BGA
(512K x 36)
(1 Mbit x 18)
Description
000
000
Describes the version number.
Reserved for internal use.
01011
01011
101000
101000
Defines the memory type and
architecture.
Device Width (23:18) 165-FBGA
000000
000000
Defines the memory type and
architecture.
Cypress Device ID (17:12)
100101
010101
Defines the width and density.
Cypress JEDEC ID Code (11:1)
00000110100
00000110100
Allows unique identification of
SRAM vendor.
ID Register Presence Indicator (0)
1
1
Indicates the presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size (x36)
Bit Size (x18)
Instruction
Bypass
ID
3
3
1
1
32
85
89
32
85
89
Boundary Scan Order (119-ball BGA package)
Boundary Scan Order (165-ball FBGA package)
Identification Codes
Instruction
EXTEST
Code
Description
000 Captures IO ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state.
IDCODE
001 Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operations.
SAMPLE Z
010 Captures IO ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011 Do Not Use. This instruction is reserved for future use.
SAMPLE/PRELOAD
100 Captures IO ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation.
RESERVED
RESERVED
BYPASS
101 Do Not Use. This instruction is reserved for future use.
110 Do Not Use. This instruction is reserved for future use.
111 Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
Note:
13. Bit #24 is 1 in the register definitions for both 2.5v and 3.3v versions of this device.
Document #: 38-05543 Rev. *E
Page 15 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
119-Ball BGA Boundary Scan Order [14, 15]
Bit #
1
Ball ID
Bit #
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
Ball ID
F6
Bit #
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
Ball ID
G4
A4
G3
C3
B2
B3
A3
C2
A2
B1
C1
D2
E1
F2
Bit #
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
Ball ID
L1
H4
T4
T5
T6
R5
L5
2
E7
D7
H7
G6
E6
D6
C7
B7
C6
A6
C5
B5
G5
B6
D4
B4
F4
M2
N1
3
4
P1
5
K1
6
L2
7
R6
U6
R7
T7
P6
N7
M6
L7
N2
P2
8
9
R3
10
11
12
13
14
15
16
17
18
19
20
21
22
T1
R1
T2
L3
R2
K6
P7
N6
L6
G1
H2
D1
E2
G2
H1
J3
T3
L4
N4
P4
K7
J5
M4
A5
K4
E4
Internal
H6
G7
2K
Notes:
14. Balls which are NC (No Connect) are pre-set LOW.
15. Bit# 85 is pre-set HIGH.
Document #: 38-05543 Rev. *E
Page 16 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
165-Ball BGA Boundary Scan Order [14, 16]
Bit #
1
Ball ID
N6
Bit #
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
Ball ID
D10
C11
A11
B11
A10
B10
A9
Bit #
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
Ball ID
G1
D2
E2
2
N7
3
N10
P11
P8
4
F2
5
G2
H1
H3
J1
6
R8
7
R9
8
P9
B9
9
P10
R10
R11
H11
N11
M11
L11
K11
J11
M10
L10
K10
J10
H9
C10
A8
K1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
L1
B8
M1
J2
A7
B7
K2
B6
L2
A6
M2
N1
N2
P1
B5
A5
A4
B4
R1
R2
P3
B3
A3
A2
R3
P2
H10
G11
F11
E11
D11
G10
F10
E10
B2
C2
R4
P4
B1
A1
N5
P6
C1
D1
R6
Internal
E1
F1
Note:
16. Bit# 89 is pre-set HIGH.
Document #: 38-05543 Rev. *E
Page 17 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
DC Input Voltage ................................... –0.5V to VDD + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. For user guidelines, not tested.
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Storage Temperature .................................–65°C to +150°C
Latch-up Current .................................................... >200 mA
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Operating Range
Supply Voltage on VDD Relative to GND ....... –0.3V to +4.6V
Supply Voltage on VDDQ Relative to GND ...... –0.3V to +VDD
Ambient
Temperature
Range
VDD
VDDQ
Commercial 0°C to +70°C 3.3V –5%/+10% 2.5V – 5%
to VDD
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to VDDQ + 0.5V
Industrial
–40°C to +85°C
[17, 18]
Electrical Characteristics Over the Operating Range
Parameter
VDD
Description
Power Supply Voltage
IO Supply Voltage
Test Conditions
Min.
3.135
3.135
2.375
2.4
Max.
3.6
Unit
V
VDDQ
for 3.3V IO
for 2.5V IO
VDD
V
2.625
V
VOH
VOL
VIH
VIL
IX
Output HIGH Voltage
Output LOW Voltage
for 3.3V IO, IOH = –4.0 mA
for 2.5V IO, IOH = –1.0 mA
for 3.3V IO, IOL = 8.0 mA
for 2.5V IO, IOL = 1.0 mA
V
2.0
V
0.4
0.4
V
V
Input HIGH Voltage [17] for 3.3V IO
2.0
1.7
VDD + 0.3V
VDD + 0.3V
0.8
V
for 2.5V IO
V
Input LOW Voltage [17]
for 3.3V IO
–0.3
–0.3
–5
V
for 2.5V IO
0.7
V
Input Leakage Current
except ZZ and MODE
GND ≤ VI ≤ VDDQ
5
µA
Input Current of MODE Input = VSS
Input = VDD
–30
–5
µA
µA
5
Input Current of ZZ
Input = VSS
Input = VDD
µA
30
5
µA
IOZ
IDD
Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled
–5
µA
VDD Operating Supply
Current
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speeds
350
300
275
160
150
140
70
mA
mA
mA
mA
mA
mA
mA
ISB1
Automatic CE
Power Down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC
ISB2
Automatic CE Power
Down Current-CMOS
Inputs
V
DD = Max, Device Deselected,
VIN ≤ 0.3V or VIN > VDDQ – 0.3V, f = 0
ISB3
Automatic CE
Power Down
Current—CMOS Inputs f = fMAX = 1/tCYC
VDD = Max, Device Deselected, or 4.0-ns cycle, 250 MHz
135
130
125
80
mA
mA
mA
mA
VIN ≤ 0.3V or VIN > VDDQ – 0.3V
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speeds
ISB4
Automatic CE
Power Down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = 0
Notes:
17. Overshoot: V (AC) < V +1.5V (pulse width less than t
/2), undershoot: V (AC) > –2V (pulse width less than t
/2).
IH
DD
CYC
IL
CYC
18. TPower up: Assumes a linear ramp from 0v to V (min.) within 200 ms. During this time V < V and V
< V
.
DD
IH
DD
DDQ
DD
Document #: 38-05543 Rev. *E
Page 18 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Capacitance [19]
100 TQFP
Package
119 BGA
Package
165 FBGA
Package
Parameter
Description
Test Conditions
Unit
pF
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VDD = 3.3V.
DDQ = 2.5V
5
5
5
8
8
8
9
9
9
CCLK
CIO
Clock Input Capacitance
Input/Output Capacitance
pF
V
pF
Thermal Resistance [19]
100 TQFP
Package
119 BGA
Package
165 FBGA
Package
Parameter
Description
Test Conditions
Unit
ΘJA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard
test methods and procedures
for measuring thermal
impedance, in accordance with
EIA/JESD51.
28.66
23.8
20.7
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
4.08
6.2
4.0
°C/W
AC Test Loads and Waveforms
3.3V IO Test Load
OUTPUT
R = 317Ω
3.3V
ALL INPUT PULSES
90%
VDDQ
GND
OUTPUT
90%
10%
Z = 50Ω
0
R = 50Ω
10%
L
5 pF
R = 351Ω
≤ 1 ns
≤ 1 ns
V = 1.5V
T
INCLUDING
JIG AND
SCOPE
(c)
(a)
(b)
2.5V IO Test Load
R = 1667Ω
2.5V
OUTPUT
R = 50Ω
OUTPUT
ALL INPUT PULSES
90%
VDDQ
GND
90%
10%
Z = 50Ω
0
10%
L
5 pF
R = 1538Ω
≤ 1 ns
≤ 1 ns
V = 1.25V
T
INCLUDING
JIG AND
SCOPE
(c)
(a)
(b)
Note:
19. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05543 Rev. *E
Page 19 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Switching Characteristics Over the Operating Range [20, 21]
250 MHz
Min. Max.
200 MHz
Min. Max.
1
167 MHz
Min. Max.
Parameter
tPOWER
Clock
tCYC
Description
VDD(Typical) to the first Access [22]
Unit
1
1
ms
Clock Cycle Time
Clock HIGH
4.0
1.7
1.7
5
6
ns
ns
ns
tCH
2.0
2.0
2.2
2.2
tCL
Clock LOW
Output Times
tCO
Data Output Valid After CLK Rise
Data Output Hold After CLK Rise
Clock to Low-Z [23, 24, 25]
2.6
3.0
3.4
ns
ns
ns
ns
ns
ns
ns
tDOH
1.0
1.0
1.3
1.3
3.0
3.0
0
1.3
1.3
tCLZ
tCHZ
Clock to High-Z [23, 24, 25]
2.6
2.6
3.4
3.4
tOEV
OE LOW to Output Valid
tOELZ
tOEHZ
Setup Times
tAS
OE LOW to Output Low-Z [23, 24, 25]
OE HIGH to Output High-Z [23, 24, 25]
0
0
2.6
3.0
3.4
Address Setup Before CLK Rise
ADSC, ADSP Setup Before CLK Rise
ADV Setup Before CLK Rise
1.2
1.2
1.2
1.2
1.2
1.2
1.4
1.4
1.4
1.4
1.4
1.4
1.5
1.5
1.5
1.5
1.5
1.5
ns
ns
ns
ns
ns
ns
tADS
tADVS
tWES
GW, BWE, BWX Setup Before CLK Rise
Data Input Setup Before CLK Rise
Chip Enable SetUp Before CLK Rise
tDS
tCES
Hold Times
tAH
Address Hold After CLK Rise
ADSP, ADSC Hold After CLK Rise
ADV Hold After CLK Rise
0.3
0.3
0.3
0.3
0.3
0.3
0.4
0.4
0.4
0.4
0.4
0.4
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
ns
ns
tADH
tADVH
tWEH
GW, BWE, BWX Hold After CLK Rise
Data Input Hold After CLK Rise
Chip Enable Hold After CLK Rise
tDH
tCEH
Notes:
20. Timing reference level is 1.5V when V
= 3.3V and is 1.25V when V
= 2.5V.
DDQ
DDQ
21. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
22. This part has a voltage regulator internally; t
is the time that the power needs to be supplied above V (minimum) initially before a read or write operation
POWER
DD
can be initiated.
23. t
, t
,t
, and t
are specified with AC test conditions shown in part (b) of AC Test Loads and Waveforms on page 19. Transition is measured ± 200
CHZ CLZ OELZ
OEHZ
mV from steady-state voltage.
24. At any given voltage and temperature, t
is less than t
and t
is less than t
to eliminate bus contention between SRAMs when sharing the same
CLZ
OEHZ
OELZ
CHZ
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
25. This parameter is sampled and not 100% tested.
Document #: 38-05543 Rev. *E
Page 20 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Switching Waveforms
Read Cycle Timing [26]
t
CYC
CLK
t
t
CL
CH
t
t
ADH
ADS
ADSP
ADSC
t
t
ADH
ADS
t
t
AH
AS
A1
A2
A3
ADDRESS
Burst continued with
new base address
t
t
WEH
WES
GW, BWE,
BWx
Deselect
cycle
t
t
CEH
CES
CE
t
t
ADVH
ADVS
ADV
OE
ADV
suspends
burst.
t
t
OEV
CO
t
t
OEHZ
t
OELZ
t
CHZ
DOH
t
CLZ
t
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
Q(A1)
Data Out (Q)
High-Z
CO
Burst wraps around
to its initial state
Single READ
BURST READ
DON’T CARE
UNDEFINED
Note:
26. On this diagram, when CE is LOW: CE is LOW, CE is HIGH and CE is LOW. When CE is HIGH: CE is HIGH or CE is LOW or CE is HIGH.
1
2
3
1
2
3
Document #: 38-05543 Rev. *E
Page 21 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Switching Waveforms (continued)
Write Cycle Timing [26, 27]
t
CYC
CLK
t
t
CL
CH
t
t
ADH
ADS
ADSP
ADSC extends burst
t
t
ADH
ADS
t
t
ADH
ADS
ADSC
t
t
AH
AS
A1
A2
A3
ADDRESS
Byte write signals are
ignored for first cycle when
ADSP initiates burst
t
t
WEH
WES
BWE,
BW X
t
t
WEH
WES
GW
CE
t
t
CEH
CES
t
t
ADVH
ADVS
ADV
OE
ADV suspends burst
t
t
DH
DS
Data In (D)
ata Out (Q)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
D(A1)
High-Z
t
OEHZ
BURST READ
Single WRITE
BURST WRITE
Extended BURST WRITE
DON’T CARE
UNDEFINED
Note:
27.
.
Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW LOW
X
Document #: 38-05543 Rev. *E
Page 22 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Switching Waveforms (continued)
Read/Write Cycle Timing [26, 28, 29]
t
CYC
CLK
t
t
CL
CH
t
t
ADH
ADS
ADSP
ADSC
t
t
AH
AS
A1
A2
A3
A4
A5
A6
ADDRESS
BWE,
t
t
WEH
WES
BW
X
t
t
CEH
CES
CE
ADV
OE
t
t
DH
t
CO
DS
t
OELZ
Data In (D)
High-Z
D(A3)
D(A5)
D(A6)
t
t
OEHZ
CLZ
Data Out (Q)
Q(A1)
Q(A2)
Q(A4)
Q(A4+1)
Q(A4+2)
Q(A4+3)
High-Z
Back-to-Back READs
Single WRITE
BURST READ
Back-to-Back
WRITEs
DON’T CARE
UNDEFINED
Notes:
28. The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC.
29. GW is HIGH.
Document #: 38-05543 Rev. *E
Page 23 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Switching Waveforms (continued)
ZZ Mode Timing [30, 31]
CLK
t
t
ZZ
ZZREC
ZZ
t
ZZI
I
SUPPLY
I
DDZZ
t
RZZI
ALL INPUTS
(except ZZ)
DESELECT or READ Only
Outputs (Q)
High-Z
DON’T CARE
Notes:
[4, 5, 6, 7, 8]
30. Device must be deselected when entering ZZ mode. See Truth Table
31. DQs are in high-Z when exiting ZZ sleep mode.
on page 9 for all possible signal conditions to deselect the device.
Document #: 38-05543 Rev. *E
Page 24 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit
www.cypress.com for actual products offered.
Speed
(MHz)
Package
Diagram
Operating
Range
Ordering Code
CY7C1380D-167AXC
CY7C1382D-167AXC
CY7C1380F-167BGC
CY7C1382F-167BGC
Part and Package Type
167
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Commercial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1380F-167BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free
CY7C1382F-167BGXC
CY7C1380D-167BZC
CY7C1382D-167BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1380D-167BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1382D-167BZXC
CY7C1380D-167AXI
CY7C1382D-167AXI
CY7C1380F-167BGI
CY7C1382F-167BGI
CY7C1380F-167BGXI
CY7C1382F-167BGXI
CY7C1380D-167BZI
CY7C1382D-167BZI
CY7C1380D-167BZXI
CY7C1382D-167BZXI
CY7C1380D-200AXC
CY7C1382D-200AXC
CY7C1380F-200BGC
CY7C1382F-200BGC
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Industrial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
200
Commercial
CY7C1380F-200BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free
CY7C1382F-200BGXC
CY7C1380D-200BZC
CY7C1382D-200BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1380D-200BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1382D-200BZXC
CY7C1380D-200AXI
CY7C1382D-200AXI
CY7C1380F-200BGI
CY7C1382F-200BGI
CY7C1380F-200BGXI
CY7C1382F-200BGXI
CY7C1380D-200BZI
CY7C1382D-200BZI
CY7C1380D-200BZXI
CY7C1382D-200BZXI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Industrial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
Document #: 38-05543 Rev. *E
Page 25 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit
www.cypress.com for actual products offered.
250
CY7C1380D-250AXC
CY7C1382D-250AXC
CY7C1380F-250BGC
CY7C1382F-250BGC
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Commercial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1380F-250BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free
CY7C1382F-250BGXC
CY7C1380D-250BZC
CY7C1382D-250BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1380D-250BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1382D-250BZXC
CY7C1380D-250AXI
CY7C1382D-250AXI
CY7C1380F-250BGI
CY7C1382F-250BGI
CY7C1380F-250BGXI
CY7C1382F-250BGXI
CY7C1380D-250BZI
CY7C1382D-250BZI
CY7C1380D-250BZXI
CY7C1382D-250BZXI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Industrial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
Document #: 38-05543 Rev. *E
Page 26 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Package Diagrams
Figure 1. 100-Pin Thin Plastic Quad Flat pack (14 x 20 x 1.4 mm) (51-85050)
16.00 0.20
14.00 0.10
1.40 0.05
100
81
80
1
0.30 0.08
0.65
TYP.
12° 1°
(8X)
SEE DETAIL
A
30
51
31
50
0.20 MAX.
1.60 MAX.
R 0.08 MIN.
0.20 MAX.
0° MIN.
SEATING PLANE
STAND-OFF
0.05 MIN.
0.15 MAX.
NOTE:
1. JEDEC STD REF MS-026
0.25
GAUGE PLANE
2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH
MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE
R 0.08 MIN.
0.20 MAX.
BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH
3. DIMENSIONS IN MILLIMETERS
0°-7°
0.60 0.15
0.20 MIN.
51-85050-*B
1.00 REF.
DETAIL
A
Document #: 38-05543 Rev. *E
Page 27 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Package Diagrams (continued)
Figure 2. 119-ball BGA (14 x 22 x 2.4 mm) (51-85115)
51-85115-*B
Document #: 38-05543 Rev. *E
Page 28 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Package Diagrams (continued)
Figure 3. 165-ball FBGA (13 x 15 x 1.4 mm) (51-85180)
BOTTOM VIEW
PIN 1 CORNER
TOP VIEW
Ø0.05 M C
PIN 1 CORNER
Ø0.25 M C A B
-0.06
Ø0.50
(165X)
+0.14
1
2
3
4
5
6
7
8
9
10
11
11 10
9
8
7
6
5
4
3
2
1
A
A
B
B
C
D
C
D
E
E
F
F
G
G
H
J
H
J
K
K
L
L
M
M
N
P
R
N
P
R
A
A
1.00
5.00
10.00
13.00 0.10
B
B
13.00 0.10
0.15(4X)
NOTES :
SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD)
PACKAGE WEIGHT : 0.475g
JEDECREFERENCE: MO-216 / DESIGN 4.6C
PACKAGE CODE : BB0AC
SEATING PLANE
C
51-85180-*A
Intel and Pentium are registered trademarks, and i486 is a trademark of Intel Corporation. All product and company names
mentioned in this document are the trademarks of their respective holders.
Document #: 38-05543 Rev. *E
Page 29 of 30
© Cypress Semiconductor Corporation, 2006-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for
the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended
to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Document History Page
Document Title: CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F, 18-Mbit (512K x 36/1M x 18) Pipelined SRAM
Document Number: 38-05543
Orig. of
REV. ECN NO. Issue Date Change
Description of Change
**
254515 See ECN
288531 See ECN
RKF
SYT
New data sheet
*A
Edited description under “IEEE 1149.1 Serial Boundary Scan (JTAG)” for
non-compliance with 1149.1
Removed 225MHz and 133 MHz Speed Bins
Added Pb-free information for 100-Pin TQFP, 119 BGA and 165 FBGA Packages
Added comment of ‘Pb-free BG packages availability’ below the Ordering Infor-
mation
*B
326078 See ECN
PCI
Address expansion pins/balls in the pinouts for all packages are modified as per
JEDEC standard
Added description on EXTEST Output Bus Tri-State
Changed description on the Tap Instruction Set Overview and Extest
Changed Device Width (23:18) for 119-BGA from 000000 to 101000
Added separate row for 165 -FBGA Device Width (23:18)
Changed ΘJA and ΘJC for TQFP Package from 31 and 6 °C/W to 28.66 and 4.08
°C/W respectively
Changed ΘJA and ΘJC for BGA Package from 45 and 7 °C/W to 23.8 and 6.2 °C/W
respectively
Changed ΘJA and ΘJC for FBGA Packagefrom 46 and 3 °C/W to 20.7 and 4.0 °C/W
respectively
Modified VOL, VOH test conditions
Removed comment of ‘Pb-free BG packages availability’ below the Ordering Infor-
mation
Updated Ordering Information Table
*C
416321 See ECN
NXR
Converted from Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901
North First Street” to “198 Champion Court”
Changed the description of IX from Input Load Current to Input Leakage Current
on page# 18
Changed the IX current values of MODE on page # 18 from –5 µA and 30 µA
to –30 µA and 5 µA
Changed the IX current values of ZZ on page # 18 from –30 µA and 5 µA
to –5 µA and 30 µA
Changed VIH < VDD to VIH < VDDon page # 18
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
*D
*E
475009 See ECN
776456 See ECN
VKN
VKN
Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND
Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP AC
Switching Characteristics table.
Updated the Ordering Information table.
Added Part numbers CY7C1380F and CY7C1382F and its related information
Added footnote# 3 regarding Chip Enable
Updated Ordering Information table
Document #: 38-05543 Rev. *E
Page 30 of 30
相关型号：
CY7C1380D-200AXIT
Cache SRAM, 512KX36, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
CYPRESS
CY7C1380D-250AXCT
512KX36 CACHE SRAM, 2.6ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
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