CY7C1382DV25-250BGI [CYPRESS]
Cache SRAM, 1MX18, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119;
| 型号： | CY7C1382DV25-250BGI |
| 厂家： | 
CYPRESS |
| 描述： | Cache SRAM, 1MX18, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 静态存储器 |
| 文件： | 总29页 (文件大小：498K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CY7C1380DV25
CY7C1382DV25
18-Mbit (512K x 36/1M x 18)
Pipelined SRAM
Features
Functional Description[1]
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200 and 167 MHz
• Registered inputs and outputs for pipelined operation
• 2.5V core power supply
The CY7C1380DV25/CY7C1382DV25 SRAM integrates
512K x 36 and 1M x 18 SRAM cells with advanced
synchronous peripheral circuitry and a two-bit counter for
internal burst operation. All synchronous inputs are gated by
registers controlled by a positive-edge-triggered Clock Input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining Chip Enable (CE1), depth-
expansion Chip Enables (CE2 and CE3[2]), Burst Control
inputs (ADSC, ADSP, and ADV), Write Enables (BWX, and
BWE), and Global Write (GW). Asynchronous inputs include
the Output Enable (OE) and the ZZ pin.
• Fast clock-to-output times
— 2.6 ns (for 250-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel®
Pentium® interleaved or linear burst sequences
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Single Cycle Chip Deselect
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the byte write control inputs. GW when active
• Available in JEDEC-standard lead-free 100-pin TQFP,
lead-free and non lead-free 119-ball BGA package and
165-ball FBGA package
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode Option
causes all bytes to be written.
LOW
The CY7C1380DV25/CY7C1382DV25 operates from a +2.5V
core power supply while all outputs may operate with a +2.5
supply. All inputs and outputs are JEDEC-standard JESD8-5-
compatible.
Selection Guide
250 MHz
2.6
200 MHz
3.0
167 MHz
3.4
Unit
ns
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
350
300
275
mA
mA
70
70
70
Notes:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
2. CE , CE are for TQFP and 165 FBGA package only. 119 BGA is offered only in 1 Chip Enable.
3
2
Cypress Semiconductor Corporation
Document #: 38-05546 Rev. *D
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 27, 2006
CY7C1380DV25
CY7C1382DV25
1
Logic Block Diagram – CY7C1380DV25 (512K x 36)
A0, A1, A
ADDRESS
REGISTER
2
A[1:0]
MODE
Q1
ADV
CLK
BURST
COUNTER
AND
CLR
Q0
LOGIC
ADSC
ADSP
DQ
BYTE
WRITE REGISTER
D ,DQPD
DQ
BYTE
WRITE DRIVER
D ,DQPD
BW
D
DQC ,DQP
BYTE
WRITE DRIVER
C
DQC ,DQP
BYTE
WRITE REGISTER
C
BW
C
OUTPUT
BUFFERS
OUTPUT
REGISTERS
MEMORY
ARRAY
DQ s
SENSE
AMPS
DQPA
DQB ,DQP
BYTE
WRITE DRIVER
B
E
DQB ,DQP
BYTE
WRITE REGISTER
B
DQP
DQP
B
C
BW
BW
B
A
DQPD
DQ
BYTE
WRITE DRIVER
A ,DQPA
DQ
A ,DQPA
BYTE
WRITE REGISTER
BWE
INPUT
REGISTERS
GW
ENABLE
REGISTER
PIPELINED
ENABLE
CE
CE
CE
1
2
3
OE
SLEEP
CONTROL
ZZ
2
Logic Block Diagram – CY7C1382DV25 (1M x 18)
ADDRESS
A0, A1, A
REGISTER
A[1:0]
2
MODE
Q1
ADV
CLK
BURST
COUNTER AND
LOGIC
CLR
Q0
ADSC
ADSP
DQB,DQP
B
DQB,DQP
WRITE REGISTER
B
WRITE DRIVER
OUTPUT
BUFFERS
BW
B
A
DQs
DQP
DQP
OUTPUT
REGISTERS
SENSE
AMPS
MEMORY
ARRAY
A
B
DQA,DQP
A
E
DQA,DQP
WRITE REGISTER
A
WRITE DRIVER
BW
BWE
GW
INPUT
REGISTERS
ENABLE
REGISTER
CE1
CE2
PIPELINED
ENABLE
CE3
OE
ZZ
SLEEP
CONTROL
Document #: 38-05546 Rev. *D
Page 2 of 29
CY7C1380DV25
CY7C1382DV25
Pin Configurations
100-pin TQFP Pinout (3 Chip Enable)
DQPC
1
DQP
B
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
NC
NC
NC
VDDQ
VSSQ
NC
A
NC
NC
VDDQ
VSSQ
NC
DQP
DQ
DQ
VSSQ
VDDQ
DQ
DQ
VSS
NC
VDD
ZZ
DQ
DQ
VDDQ
VSSQ
DQ
DQ
NC
NC
VSSQ
VDDQ
NC
1
2
3
4
5
6
7
8
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQC
DQB
2
3
4
5
6
7
8
9
DQc
VDDQ
VSSQ
DQB
VDDQ
VSSQ
DQ
DQ
DQ
DQ
C
DQB
DQB
DQB
DQB
C
NC
A
C
DQB
A
C
DQB
A
9
VSSQ
VDDQ
VSSQ
VDDQ
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
VSSQ
VDDQ
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
DQ
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSSQ
C
DQB
DQB
A
DQB
DQB
A
VSS
NC
VDD
ZZ
NC
VDD
NC
CY7C1382DV25
(1M x 18)
CY7C1380DV25
(512K X 36)
VSS
DQA
DQB
A
DQA
DQB
A
VDDQ
VSSQ
VDDQ
VSSQ
DQ
DQ
DQ
DQ
D
DQA
DQA
DQA
DQA
DQ
DQ
DQP
B
B
B
A
D
A
D
D
NC
VSSQ
VDDQ
NC
NC
NC
VSSQ
VDDQ
VSSQ
VDDQ
DQ
DQ
DQP
D
DQA
D
DQA
NC
NC
D
DQP
A
Document #: 38-05546 Rev. *D
Page 3 of 29
CY7C1380DV25
CY7C1382DV25
Pin Configurations (continued)
119-Ball BGA
Pinout
CY7C1380DV25 (512K x 36)
1
2
3
4
5
6
7
A
VDDQ
A
A
A
A
VDDQ
ADSP
ADSC
VDD
B
C
NC/288M
NC/144M
A
A
A
A
A
A
A
A
NC/576M
NC/1G
D
E
F
DQC
DQC
VDDQ
DQPC
DQC
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQPB
DQB
DQB
DQB
CE1
DQC
DQB
VDDQ
OE
G
H
J
DQC
DQC
VDDQ
DQD
DQC
DQC
VDD
BWC
VSS
NC
BWB
VSS
NC
DQB
DQB
VDD
DQA
DQB
DQB
VDDQ
DQA
ADV
GW
VDD
K
DQD
VSS
CLK
NC
VSS
L
M
N
DQD
VDDQ
DQD
DQD
DQD
DQD
DQA
DQA
DQA
DQA
VDDQ
DQA
BWD
VSS
VSS
BWA
VSS
VSS
BWE
A1
DQD
NC
DQPD
A
VSS
A0
VSS
NC
DQPA
A
DQA
NC
P
R
MODE
VDD
T
NC
NC/72M
TMS
A
A
A
NC/36M
NC
ZZ
VDDQ
TDI
TCK
TDO
VDDQ
U
CY7C1382DV25 (1M x 18)
2
A
1
3
A
4
5
A
6
A
7
VDDQ
NC/576M
NC/1G
NC
VDDQ
A
B
C
D
E
F
ADSP
NC/288M
NC/144M
DQB
A
A
A
A
ADSC
VDD
A
A
A
A
NC
DQB
NC
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQPA
NC
DQA
NC
DQA
CE1
VDDQ
VDDQ
OE
NC
DQB
NC
VDD
NC
VSS
NC
NC
DQA
VDD
DQA
NC
VDDQ
G
H
J
BWB
VSS
NC
ADV
DQB
VDDQ
GW
VDD
K
NC
DQB
VSS
CLK
NC
VSS
NC
DQA
L
M
N
P
DQB
VDDQ
DQB
NC
NC
DQB
NC
NC
VSS
VSS
VSS
DQA
NC
NC
VDDQ
NC
BWA
VSS
BWE
A1
VSS
VSS
DQA
NC
DQPB
A0
DQA
R
T
NC
A
A
MODE
A
VDD
NC/36M
TCK
NC
A
A
A
NC
ZZ
NC/72M
VDDQ
TMS
TDI
TDO
NC
VDDQ
U
Document #: 38-05546 Rev. *D
Page 4 of 29
CY7C1380DV25
CY7C1382DV25
Pin Configurations (continued)
165-Ball FBGA Pinout (3 Chip Enable)
CY7C1380DV25 (512K x 36)
1
2
3
4
5
6
7
8
9
10
A
11
NC
NC/288M
NC/144M
DQPC
A
B
C
D
CE1
BWC
BWD
VSS
VDD
BWB
BWA
VSS
VSS
CE3
CLK
VSS
VSS
ADSC
A
BWE
GW
VSS
ADV
ADSP
VDDQ
VDDQ
A
CE2
VDDQ
VDDQ
A
NC/576M
DQPB
DQB
OE
VSS
VDD
NC
NC/1G
DQB
DQC
DQC
VSS
DQC
DQC
DQC
DQC
NC
VDDQ
VDDQ
VDDQ
NC
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
DQB
DQB
DQB
NC
DQB
E
F
DQC
DQC
NC
VSS
VSS
VSS
VSS
VSS
VSS
DQB
DQB
ZZ
G
H
J
DQD
DQD
DQD
DQD
DQD
DQD
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
DQA
DQA
DQA
DQA
DQA
DQA
K
L
DQD
DQPD
NC
DQD
NC
VDDQ
VDDQ
A
VDD
VSS
A
VSS
NC
VSS
A
VSS
NC
VDD
VSS
A
VDDQ
VDDQ
A
DQA
NC
A
DQA
DQPA
A
M
N
P
NC/72M
TDI
A1
TDO
A0
MODE
NC/36M
A
A
TMS
TCK
A
A
A
A
R
CY7C1382DV25 (1M x 18)
1
2
A
3
4
5
NC
6
7
8
9
10
A
11
A
NC/288M
NC/144M
NC
A
BWB
NC
CE
CE1
CE2
BWE
GW
VSS
ADSC
OE
ADV
ADSP
VDDQ
VDDQ
3
A
BWA
VSS
VSS
CLK
VSS
VSS
A
NC/576M
DQPA
DQA
B
C
D
NC
VDDQ
VDDQ
VSS
VDD
VSS
NC/1G
NC
NC
DQB
VSS
VDD
NC
DQB
DQB
DQB
NC
VDDQ
VDDQ
VDDQ
NC
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
NC
NC
DQA
E
F
NC
NC
VSS
VSS
VSS
VSS
VSS
VSS
DQA
DQA
ZZ
NC
G
H
J
NC
NC
DQB
DQB
DQB
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
DQA
DQA
DQA
NC
NC
NC
K
L
NC
NC
DQB
DQPB
NC
NC
NC
VDDQ
VDDQ
A
VDD
VSS
A
VSS
NC
VSS
A
VSS
NC
VDD
VSS
A
VDDQ
VDDQ
A
DQA
NC
A
NC
NC
A
M
N
P
NC/72M
TDI
A1
TDO
MODE
NC/36M
A
A
TMS
A0
TCK
A
A
A
A
R
Document #: 38-05546 Rev. *D
Page 5 of 29
CY7C1380DV25
CY7C1382DV25
Pin Definitions
Name
I/O
Description
A0, A1, A
Input-
Synchronous
Address Inputs used to select one of the address locations. Sampled at the rising
edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3[2]are sampled
active. A1: A0 are fed to the two-bit counter.
Input-
Synchronous
Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes to
the SRAM. Sampled on the rising edge of CLK.
BWA, BWB
BWC, BWD
GW
Input-
Synchronous
Global Write Enable Input, active LOW. When asserted LOW on the rising edge of
CLK, a global write is conducted (ALL bytes are written, regardless of the values on
BWX and BWE).
Input-
Synchronous
Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal
must be asserted LOW to conduct a byte write.
BWE
CLK
Input-
Clock
Clock Input. Used to capture all synchronous inputs to the device. Also used to
increment the burst counter when ADV is asserted LOW, during a burst operation.
Input-
Synchronous
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in
CE1
conjunction with CE and CE to select/deselect the device. ADSP is ignored
if CE1 is
3
CE is sampl2ed only when a new external address is loaded.
HIGH.
1
[2]
CE2
Input-
Synchronous
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE3 to select/deselect the device. CE2 is sampled only when
a new external address is loaded.
[2]
Input-
Synchronous
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE2 to select/deselect the device. CE3 is sampled only when
a new external address is loaded.
CE3
Input-
Asynchronous
Output Enable, asynchronous input, active LOW. Controls the direction of the I/O
pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins
are tri-stated, and act as input data pins. OE is masked during the first clock of a read
cycle when emerging from a deselected state.
OE
Input-
Synchronous
Advance Input signal, sampled on the rising edge of CLK, active LOW. When
asserted, it automatically increments the address in a burst cycle.
ADV
Input-
Synchronous
Address Strobe from Processor, sampled on the rising edge of CLK, active LOW.
When asserted LOW, addresses presented to the device are captured in the address
registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are
both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted
HIGH.
ADSP
Input-
Synchronous
Address Strobe from Controller, sampled on the rising edge of CLK, active LOW.
When asserted LOW, addresses presented to the device are captured in the address
registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are
both asserted, only ADSP is recognized.
ADSC
ZZ
Input-
Asynchronous
ZZ “Sleep” Input. This active HIGH input places the device in a non-time critical “sleep”
condition with data integrity preserved. For normal operation, this pin has to be LOW
or left floating. ZZ pin has an internal pull-down.
I/O-
Synchronous
Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is
triggered by the rising edge of CLK. As outputs, they deliver the data contained in the
memory location specified by the addresses presented during the previous clock rise
of the read cycle. The direction of the pins is controlled by OE. When OE is asserted
LOW, the pins behave as outputs. When HIGH, DQs and DQPX are placed in a tri-state
condition.
DQs, DQPX
VDD
Power Supply
Ground
Power supply inputs to the core of the device.
Ground for the core of the device.
Ground for the I/O circuitry.
VSS
VSSQ
VDDQ
MODE
I/O Ground
I/O Power Supply Power supply for the I/O circuitry.
Input-
Static
Selects Burst Order. When tied to GND selects linear burst sequence. When tied to
VDD or left floating selects interleaved burst sequence. This is a strap pin and should
remain static during device operation. Mode Pin has an internal pull-up.
Document #: 38-05546 Rev. *D
Page 6 of 29
CY7C1380DV25
CY7C1382DV25
Pin Definitions (continued)
Name
I/O
Description
TDO
JTAG serial output Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the
Synchronous
JTAG feature is not being utilized, this pin should be disconnected. This pin is not
available on TQFP packages.
TDI
JTAG serial input Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG
Synchronous
feature is not being utilized, this pin can be disconnected or connected to VDD. This pin
is not available on TQFP packages.
TMS
JTAG serial input Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG
Synchronous
feature is not being utilized, this pin can be disconnected or connected to VDD. This pin
is not available on TQFP packages.
TCK
NC
JTAG-Clock
Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin
must be connected to VSS. This pin is not available on TQFP packages.
–
–
No Connects. Not internally connected to the die
NC/(36M,72M,
144M, 288M,
576M, 1G)
These pins are not connected. They will be used for expansion to the 36M, 72M,
144M, 288M, 576M and 1G densities.
Document #: 38-05546 Rev. *D
Page 7 of 29
CY7C1380DV25
CY7C1382DV25
signals. The CY7C1380DV25/CY7C1382DV25 provides Byte
Write capability that is described in the Write Cycle Descrip-
tions table. Asserting the Byte Write Enable input (BWE) with
the selected Byte Write (BWX) input, will selectively write to
only the desired bytes. Bytes not selected during a Byte Write
operation will remain unaltered. A synchronous self-timed
Write mechanism has been provided to simplify the Write
operations.
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (tCO) is 2.6 ns (250-
MHz device).
The CY7C1380DV25/CY7C1382DV25 supports secondary
cache in systems utilizing either a linear or interleaved burst
sequence. The interleaved burst order supports Pentium and
i486™ processors. The linear burst sequence is suited for
processors that utilize a linear burst sequence. The burst order
is user selectable, and is determined by sampling the MODE
input. Accesses can be initiated with either the Processor
Address Strobe (ADSP) or the Controller Address Strobe
(ADSC). Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.
Because the CY7C1380DV25/CY7C1382DV25 is a common
I/O device, the Output Enable (OE) must be deserted HIGH
before presenting data to the DQs inputs. Doing so will tri-state
the output drivers. As a safety precaution, DQs are automati-
cally tri-stated whenever a Write cycle is detected, regardless
of the state of OE.
Single Write Accesses Initiated by ADSC
ADSC Write accesses are initiated when the following condi-
tions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deasserted HIGH, (3) CE1, CE2, CE3 are all asserted active,
and (4) the appropriate combination of the Write inputs (GW,
BWE, and BWX) are asserted active to conduct a Write to the
desired byte(s). ADSC-triggered Write accesses require a
single clock cycle to complete. The address presented to A is
loaded into the address register and the address
advancement logic while being delivered to the memory array.
The ADV input is ignored during this cycle. If a global Write is
conducted, the data presented to the DQs is written into the
corresponding address location in the memory core. If a Byte
Write is conducted, only the selected bytes are written. Bytes
not selected during a Byte Write operation will remain
unaltered. A synchronous self-timed Write mechanism has
been provided to simplify the Write operations.
Byte Write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BWX) inputs. A Global Write
Enable (GW) overrides all Byte Write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed Write circuitry.
Three synchronous Chip Selects (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. ADSP is ignored if CE1
is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
CE1, CE2, CE3 are all asserted active, and (3) the Write
signals (GW, BWE) are all deasserted HIGH. ADSP is ignored
if CE1 is HIGH. The address presented to the address inputs
(A) is stored into the address advancement logic and the
Address Register while being presented to the memory array.
The corresponding data is allowed to propagate to the input of
the Output Registers. At the rising edge of the next clock the
data is allowed to propagate through the output register and
onto the data bus within 2.6 ns (250-MHz device) if OE is
active LOW. The only exception occurs when the SRAM is
emerging from a deselected state to a selected state, its
outputs are always tri-stated during the first cycle of the
access. After the first cycle of the access, the outputs are
controlled by the OE signal. Consecutive single Read cycles
are supported. Once the SRAM is deselected at clock rise by
the chip select and either ADSP or ADSC signals, its output
will tri-state immediately.
Because the CY7C1380DV25/CY7C1382DV25 is a common
I/O device, the Output Enable (OE) must be deserted HIGH
before presenting data to the DQs inputs. Doing so will tri-state
the output drivers. As a safety precaution, DQs are automati-
cally tri-stated whenever a Write cycle is detected, regardless
of the state of OE.
Burst Sequences
The CY7C1380DV25/CY7C1382DV25 provides a two-bit
wraparound counter, fed by A1: A0, that implements either an
interleaved or linear burst sequence. The interleaved burst
sequence is designed specifically to support Intel Pentium
applications. The linear burst sequence is designed to support
processors that follow a linear burst sequence. The burst
sequence is user selectable through the MODE input.
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both Read and Write burst operations are supported.
Single Write Accesses Initiated by ADSP
Sleep Mode
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) CE1, CE2, CE3 are all asserted active. The address
presented to A is loaded into the address register and the
address advancement logic while being delivered to the
memory array. The Write signals (GW, BWE, and BWX) and
ADV inputs are ignored during this first cycle.
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE1, CE2, CE3, ADSP, and ADSC must
remain inactive for the duration of tZZREC after the ZZ input
returns LOW.
ADSP-triggered Write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQs inputs is written into the corre-
sponding address location in the memory array. If GW is HIGH,
then the Write operation is controlled by BWE and BWX
Document #: 38-05546 Rev. *D
Page 8 of 29
CY7C1380DV25
CY7C1382DV25
Interleaved Burst Address Table
(MODE = Floating or VDD
Linear Burst Address Table
(MODE = GND)
)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
ZZ Mode Electrical Characteristics
Parameter
IDDZZ
Description
Sleep mode standby current
Device operation to ZZ
ZZ recovery time
Test Conditions
ZZ > VDD – 0.2V
Min.
Max.
Unit
mA
ns
80
tZZS
ZZ > VDD – 0.2V
2tCYC
tZZREC
tZZI
ZZ < 0.2V
2tCYC
0
ns
ZZ Active to sleep current
This parameter is sampled
This parameter is sampled
2tCYC
ns
tRZZI
ZZ Inactive to exit sleep current
ns
Truth Table[3, 4, 5, 6, 7, 8]
Operation
Add. Used CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK
DQ
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Sleep Mode, Power Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
None
None
H
L
X
L
X
X
H
X
H
X
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
L
L
X
X
L
X
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
L
L-H Tri-State
L-H Tri-State
L-H Tri-State
L-H Tri-State
L-H Tri-State
None
L
X
L
L
None
L
H
H
X
L
None
L
X
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
L
None
X
L
X
X
X
L
X
Tri-State
Q
External
External
External
External
External
Next
L-H
L
L
L
H
X
L
L-H Tri-State
L
L
H
H
H
H
H
X
X
H
X
H
H
X
L-H
L-H
D
Q
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
L
L
L
H
H
H
H
H
H
L
L
L
L
H
L
L-H Tri-State
L-H
L-H Tri-State
L-H
L-H Tri-State
X
X
H
H
X
H
X
X
H
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
Q
Next
L
H
L
Next
L
Q
Next
L
H
X
X
L
Next
L
L-H
L-H
L-H
D
D
Q
Next
L
L
Current
Current
Current
H
H
H
H
H
H
H
L
L-H Tri-State
L-H
Read Cycle, Suspend Burst
Q
Notes:
3. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
4. WRITE = L when any one or more Byte Write enable signals and BWE = L or GW = L. WRITE = H when all Byte write enable signals, BWE, GW = H.
5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
6. CE , CE , and CE are available only in the TQFP package. BGA package has only 2 chip selects CE and CE .
1
2
3
1
2
7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW . Writes may occur only on subsequent clocks
X
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a
don't care for the remainder of the write cycle
8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are Tri-State when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document #: 38-05546 Rev. *D
Page 9 of 29
CY7C1380DV25
CY7C1382DV25
Truth Table[3, 4, 5, 6, 7, 8] (continued)
Operation
Add. Used CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK
DQ
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Current
H
X
H
X
X
X
X
X
X
L
L
L
X
H
X
H
H
H
H
H
H
H
L
L
H
X
X
L-H Tri-State
Current
Current
L-H
L-H
D
D
Truth Table for Read/Write[5, 9]
Function (CY7C1380DV25)
Read
GW
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
BWE
H
L
BWD
BWC
BWB
X
H
H
L
BWA
X
H
L
X
H
H
H
H
H
H
H
H
L
X
H
H
H
H
L
Read
Write Byte A – (DQA and DQPA)
Write Byte B – (DQB and DQPB)
Write Bytes B, A
L
L
H
L
L
L
Write Byte C – (DQC and DQPC)
Write Bytes C, A
L
H
H
L
H
L
L
L
Write Bytes C, B
L
L
H
L
Write Bytes C, B, A
Write Byte D – (DQD and DQPD)
Write Bytes D, A
L
L
L
L
H
H
H
H
L
H
H
L
H
L
L
L
Write Bytes D, B
L
L
H
L
Write Bytes D, B, A
Write Bytes D, C
L
L
L
L
L
H
H
L
H
L
Write Bytes D, C, A
Write Bytes D, C, B
Write All Bytes
L
L
L
L
L
L
H
L
L
L
L
L
Write All Bytes
X
X
X
X
X
Truth Table for Read/Write[5, 9]
Function (CY7C1382DV25)
Read
BWA
GW
H
BWE
BWB
X
H
L
L
L
L
L
X
X
H
L
Read
H
H
Write Byte A – (DQA and DQPA)
Write Byte B – (DQB and DQPB)
Write Bytes B, A
H
H
H
L
H
L
H
L
Write All Bytes
H
L
L
Write All Bytes
L
X
X
Note:
9. Table only lists a partial listing of the byte write combinations. Any combination of BW is valid. Appropriate write will be done based on which byte write is active.
X
Document #: 38-05546 Rev. *D
Page 10 of 29
CY7C1380DV25
CY7C1382DV25
Test Data-In (TDI)
IEEE 1149.1 Serial Boundary Scan (JTAG)
The TDI ball is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information on loading the instruction register, see TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) of any register.
(See Tap Controller Block Diagram.)
The CY7C1380DV25/CY7C1382DV25 incorporates a serial
boundary scan test access port (TAP).This part is fully
compliant with 1149.1. The TAP operates using JEDEC-
standard 3.3V or 2.5V I/O logic levels.
The CY7C1380DV25/CY7C1382DV25 contains
a
TAP
controller, instruction register, boundary scan register, bypass
register, and ID register.
Disabling the JTAG Feature
Test Data-Out (TDO)
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are inter-
nally pulled up and may be unconnected. They may alternately
be connected to VDD through a pull-up resistor. TDO should be
left unconnected. Upon power-up, the device will come up in
a reset state which will not interfere with the operation of the
device.
The TDO output ball is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine. The output changes on the
falling edge of TCK. TDO is connected to the least significant
bit (LSB) of any register. (See Tap Controller State Diagram.)
TAP Controller Block Diagram
TAP Controller State Diagram
0
Bypass Register
TEST-LOGIC
1
RESET
0
2
1
0
0
0
Selection
Circuitry
1
1
1
Instruction Register
31 30 29
Identification Register
RUN-TEST/
IDLE
SELECT
DR-SCAN
SELECT
IR-SCAN
S
election
0
TDI
TDO
Circuitr
y
.
.
. 2 1
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
x
.
.
.
.
. 2 1
SHIFT-DR
0
SHIFT-IR
0
Boundary Scan Register
1
1
1
1
EXIT1-DR
EXIT1-IR
TCK
TMS
0
0
TAP CONTROLLER
PAUSE-DR
0
PAUSE-IR
0
1
1
0
0
EXIT2-DR
1
EXIT2-IR
1
Performing a TAP Reset
A RESET is performed by forcing TMS HIGH (VDD) for five
rising edges of TCK. This RESET does not affect the operation
of the SRAM and may be performed while the SRAM is
operating.
UPDATE-DR
UPDATE-IR
1
0
1
0
At power-up, the TAP is reset internally to ensure that TDO
comes up in a High-Z state.
The 0/1 next to each state represents the value of TMS at the
rising edge of TCK.
TAP Registers
Registers are connected between the TDI and TDO balls and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction register. Data is serially loaded into the TDI ball
on the rising edge of TCK. Data is output on the TDO ball on
the falling edge of TCK.
Test Access Port (TAP)
Test Clock (TCK)
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Instruction Register
Test Mode Select (TMS)
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO balls as shown in the Tap Controller Block
Diagram. Upon power-up, the instruction register is loaded
with the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this ball unconnected if the TAP is not used. The ball is
pulled up internally, resulting in a logic HIGH level.
Document #: 38-05546 Rev. *D
Page 11 of 29
CY7C1380DV25
CY7C1382DV25
When the TAP controller is in the Capture-IR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board-level serial test data path.
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state.
The IDCODE instruction is loaded into the instruction register
upon power-up or whenever the TAP controller is given a test
logic reset state.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between the
TDI and TDO balls. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO balls when the TAP
controller is in a Shift-DR state. It also places all SRAM outputs
into a High-Z state.
Boundary Scan Register
SAMPLE/PRELOAD
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM.
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and output pins is
captured in the boundary scan register.
The boundary scan register is loaded with the contents of the
RAM I/O ring when the TAP controller is in the Capture-DR
state and is then placed between the TDI and TDO balls when
the controller is moved to the Shift-DR state. The EXTEST,
SAMPLE/PRELOAD and SAMPLE Z instructions can be used
to capture the contents of the I/O ring.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because
there is a large difference in the clock frequencies, it is
possible that during the Capture-DR state, an input or output
will undergo a transition. The TAP may then try to capture a
signal while in transition (metastable state). This will not harm
the device, but there is no guarantee as to the value that will
be captured. Repeatable results may not be possible.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture set-up plus
hold times (tCS and tCH). The SRAM clock input might not be
captured correctly if there is no way in a design to stop (or
slow) the clock during a SAMPLE/PRELOAD instruction. If this
is an issue, it is still possible to capture all other signals and
simply ignore the value of the CK and CK captured in the
boundary scan register.
TAP Instruction Set
Overview
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO pins.
Eight different instructions are possible with the three bit
instruction register. All combinations are listed in the
Instruction Codes table. Three of these instructions are listed
as RESERVED and should not be used. The other five instruc-
tions are described in detail below.
PRELOAD allows an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells
prior to the selection of another boundary scan test operation.
Instructions are loaded into the TAP controller during the Shift-
IR state when the instruction register is placed between TDI
and TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO balls. To execute
the instruction once it is shifted in, the TAP controller needs to
be moved into the Update-IR state.
The shifting of data for the SAMPLE and PRELOAD phases
can occur concurrently when required—that is, while data
captured is shifted out, the preloaded data can be shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
EXTEST
The EXTEST instruction enables the preloaded data to be
driven out through the system output pins. This instruction also
selects the boundary scan register to be connected for serial
access between the TDI and TDO in the shift-DR controller
state.
EXTEST Output Bus Tri-State
IEEE Standard 1149.1 mandates that the TAP controller be
able to put the output bus into a tri-state mode.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO balls and allows
The boundary scan register has a special bit located at bit #85
(for 119-BGA package) or bit #89 (for 165-fBGA package).
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the “Update-DR” state
Document #: 38-05546 Rev. *D
Page 12 of 29
CY7C1380DV25
CY7C1382DV25
in the TAP controller, it will directly control the state of the
output (Q-bus) pins, when the EXTEST is entered as the
current instruction. When HIGH, it will enable the output
buffers to drive the output bus. When LOW, this bit will place
the output bus into a High-Z condition.
register. When the EXTEST instruction is entered, this bit will
directly control the output Q-bus pins. Note that this bit is
preset HIGH to enable the output when the device is powered-
up, and also when the TAP controller is in the “Test-Logic-
Reset” state.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that
cell, during the “Shift-DR” state. During “Update-DR,” the value
loaded into that shift-register cell will latch into the preload
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
1
2
3
4
5
6
Test Clock
(TCK)
t
t
t
CYC
TH
TL
t
t
t
t
TMSS
TDIS
TMSH
Test Mode Select
(TMS)
TDIH
Test Data-In
(TDI)
t
TDOV
t
TDOX
Test Data-Out
(TDO)
DON’T CARE
UNDEFINED
TAP AC Switching Characteristics Over the Operating Range[10, 11]
Parameter
Clock
tTCYC
tTF
Description
Min.
Max.
Unit
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH time
TCK Clock LOW time
50
ns
MHz
ns
20
tTH
20
20
tTL
ns
Output Times
tTDOV TCK Clock LOW to TDO Valid
tTDOX TCK Clock LOW to TDO Invalid
Set-up Times
tTMSS TMS Set-up to TCK Clock Rise
tTDIS
10
ns
ns
0
5
5
5
ns
ns
ns
TDI Set-up to TCK Clock Rise
Capture Set-up to TCK Rise
tCS
Hold Times
tTMSH
tTDIH
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
5
5
5
ns
ns
ns
tCH
Capture Hold after Clock Rise
Notes:
10. t and t refer to the set-up and hold time requirements of latching data from the boundary scan register.
CS
CH
11. Test conditions are specified using the load in TAP AC test Conditions. t /t = 1 ns.
R
F
Document #: 38-05546 Rev. *D
Page 13 of 29
CY7C1380DV25
CY7C1382DV25
2.5V TAP AC Test Conditions
2.5V TAP AC Output Load Equivalent
1.25V
Input pulse levels ............................................... .VSS to 2.5V
Input rise and fall time..................................................... 1 ns
Input timing reference levels.........................................1.25V
Output reference levels.................................................1.25V
Test load termination supply voltage.............................1.25V
50Ω
TDO
ZO= 50Ω
20pF
TAP DC Electrical Characteristics And Operating Conditions
(0°C < TA < +70°C; VDD = 2.5V ±0.125V unless otherwise noted)[12]
Parameter
VOH1
Description
Test Conditions
Min.
Max.
Unit
V
Output HIGH Voltage IOH = –1.0 mA, VDDQ = 2.5V
Output HIGH Voltage IOH = –100 µA, VDDQ = 2.5V
Output LOW Voltage IOL = 8.0 mA, VDDQ = 2.5V
2.0
2.1
VOH2
VOL1
VOL2
VIH
V
0.4
0.2
V
Output LOW Voltage IOL = 100 µA
Input HIGH Voltage
VDDQ = 2.5V
V
VDDQ = 2.5V
VDDQ = 2.5V
1.7
–0.3
–5
VDD + 0.3
0.7
V
VIL
Input LOW Voltage
V
IX
Input Load Current
GND < VIN < VDDQ
5
µA
Identification Register Definitions
CY7C1380DV25
CY7C1382DV25
(1 Mbit x 18)
Instruction Field
Revision Number (31:29)
(512K x36)
Description
000
000
01011
Describes the version number
Reserved for internal use
Device Depth (28:24)
01011
Device Width (23:18) 119-BGA
Device Width (23:18) 165-FBGA
Cypress Device ID (17:12)
Cypress JEDEC ID Code (11:1)
101000
101000
Defines memory type and architecture
Defines memory type and architecture
Defines width and density
000000
000000
100101
010101
00000110100
00000110100
Allows unique identification of SRAM
vendor
ID Register Presence Indicator (0)
1
1
Indicates the presence of an ID register
Scan Register Sizes
Register Name
Bit Size (x36)
Bit Size (x18)
Instruction
Bypass
ID
3
3
1
1
32
85
89
32
85
89
Boundary Scan Order (119-ball BGA package)
Boundary Scan Order (165-ball FBGA package)
Note:
12. All voltages referenced to V (GND).
SS
Document #: 38-05546 Rev. *D
Page 14 of 29
CY7C1380DV25
CY7C1382DV25
Identification Codes
Instruction
Code
Description
EXTEST
000
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state.
IDCODE
001
010
Loads the ID register with the vendor ID code and places the register between TDI and
TDO. This operation does not affect SRAM operations.
SAMPLE Z
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011
100
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation.
RESERVED
RESERVED
BYPASS
101
110
111
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
119-Ball BGA Boundary Scan Order [13, 14]
Bit #
1
Ball ID
Bit #
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
Ball ID
F6
Bit #
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
Ball ID
G4
A4
G3
C3
B2
B3
A3
C2
A2
B1
C1
D2
E1
F2
Bit #
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
Ball ID
L1
H4
T4
T5
T6
R5
L5
2
E7
D7
H7
G6
E6
D6
C7
B7
C6
A6
C5
B5
G5
B6
D4
B4
F4
M2
N1
3
4
P1
5
K1
6
L2
7
R6
U6
R7
T7
P6
N7
M6
L7
N2
P2
8
9
R3
10
11
12
13
14
15
16
17
18
19
20
21
22
T1
R1
T2
L3
R2
K6
P7
N6
L6
G1
H2
D1
E2
G2
H1
J3
T3
L4
N4
P4
K7
J5
M4
A5
K4
E4
Internal
H6
G7
2K
Notes:
13. Balls which are NC (No Connect) are pre-set LOW.
14. Bit# 85 is pre-set HIGH.
Document #: 38-05546 Rev. *D
Page 15 of 29
CY7C1380DV25
CY7C1382DV25
165-Ball FBGA Boundary Scan Order [13, 15]
Bit #
1
Ball ID
N6
Bit #
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
Ball ID
D10
C11
A11
B11
A10
B10
A9
Bit #
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
Ball ID
G1
D2
E2
2
N7
3
N10
P11
P8
4
F2
5
G2
H1
H3
J1
6
R8
7
R9
8
P9
B9
9
P10
R10
R11
H11
N11
M11
L11
K11
J11
M10
L10
K10
J10
H9
C10
A8
K1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
L1
B8
M1
J2
A7
B7
K2
B6
L2
A6
M2
N1
N2
P1
B5
A5
A4
B4
R1
R2
P3
B3
A3
A2
R3
P2
H10
G11
F11
E11
D11
G10
F10
E10
B2
C2
R4
P4
B1
A1
N5
P6
C1
D1
R6
Internal
E1
F1
Note:
15. Bit# 89 is pre-set HIGH.
Document #: 38-05546 Rev. *D
Page 16 of 29
CY7C1380DV25
CY7C1382DV25
DC Input Voltage ................................... –0.5V to VDD + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Storage Temperature .................................–65°C to +150°C
Latch-up Current..................................................... >200 mA
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Operating Range
Supply Voltage on VDD Relative to GND........ –0.3V to +3.6V
Supply Voltage on VDDQ Relative to GND ......–0.3V to +VDD
Ambient
Range
Commercial
Industrial
Temperature
0°C to +70°C
–40°C to +85°C
VDD/VDDQ
2.5V ± 5%
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to VDDQ + 0.5V
Electrical Characteristics Over the Operating Range[16, 17]
Parameter
VDD
Description
Test Conditions
Min.
Max.
2.625
VDD
Unit
V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
2.375
2.375
2.0
VDDQ
VOH
for 2.5V I/O
V
for 2.5V I/O, IOH = −1.0 mA
V
VOL
for 2.5V I/O, IOL= 1.0 mA
0.4
V
VIH
Input HIGH Voltage[16] for 2.5V I/O
Input LOW Voltage[16] for 2.5V I/O
1.7
–0.3
–5
VDD + 0.3V
V
VIL
0.7
5
V
IX
Input Leakage Current GND ≤ VI ≤ VDDQ
except ZZ and MODE
µA
Input Current of MODE Input = VSS
Input = VDD
–30
–5
µA
µA
5
Input Current of ZZ
Input = VSS
Input = VDD
µA
30
5
µA
IOZ
IDD
Output Leakage Current GND ≤ VI ≤ VDD, Output Disabled
–5
µA
VDD Operating Supply VDD = Max., IOUT = 0 mA,
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
350
300
275
160
150
140
70
mA
mA
mA
mA
mA
mA
mA
Current
f = fMAX = 1/tCYC
ISB1
Automatic CE
Power-down
Current—TTL Inputs
VDD = Max, Device Deselected, 4.0-ns cycle, 250 MHz
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
ISB2
Automatic CE
Power-down
Current—CMOS Inputs f = 0
VDD = Max, Device Deselected, All speeds
VIN ≤ 0.3V or VIN > VDDQ – 0.3V,
ISB3
Automatic CE
Power-down
Current—CMOS Inputs f = fMAX = 1/tCYC
VDD = Max, Device Deselected, or 4.0-ns cycle, 250 MHz
135
130
125
mA
mA
mA
VIN ≤ 0.3V or VIN > VDDQ – 0.3V
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
ISB4
Automatic CE
Power-down
Current—TTL Inputs
VDD = Max, Device Deselected, All speeds
VIN ≥ VIH or VIN ≤ VIL, f = 0
80
mA
Notes:
16. Overshoot: V (AC) < V +1.5V (Pulse width less than t
/2), undershoot: V (AC) > –2V (Pulse width less than t
/2).
IH
DD
CYC
IL
CYC
17. T
: Assumes a linear ramp from 0V to V (min.) within 200 ms. During this time V < V and V
< V
.
Power-up
DD
IH
DD
DDQ
DD
Document #: 38-05546 Rev. *D
Page 17 of 29
CY7C1380DV25
CY7C1382DV25
Capacitance[18]
100 TQFP
Package
119 BGA
165 FBGA
Package
Parameter
Description
Test Conditions
Package
Unit
pF
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
DD/VDDQ = 2.5V
5
5
5
8
8
8
9
9
9
V
CCLK
CI/O
Clock Input Capacitance
Input/Output Capacitance
pF
pF
Thermal Resistance[18]
100 TQFP
Package
119 BGA
Package
165 FBGA
Package
Parameter
Description
Test Conditions
Unit
ΘJA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard
testmethodsandproceduresfor
measuring thermal impedance,
per EIA/JESD51.
28.66
23.8
20.7
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
4.08
6.2
4.0
°C/W
AC Test Loads and Waveforms
2.5V I/O Test Load
R = 1667Ω
2.5V
OUTPUT
OUTPUT
ALL INPUT PULSES
90%
VDDQ
90%
10%
Z = 50Ω
0
R = 50Ω
10%
L
GND
5 pF
R = 1538Ω
≤ 1 ns
≤ 1 ns
V = 1.25V
T
INCLUDING
JIG AND
SCOPE
(c)
(a)
(b)
Note:
18. Tested initially and after any design or process change that may affect these parameters
Document #: 38-05546 Rev. *D
Page 18 of 29
CY7C1380DV25
CY7C1382DV25
Switching Characteristics Over the Operating Range[23, 24]
250 MHz
200 MHz
167 MHz
Parameter
tPOWER
Clock
tCYC
Description
VDD(Typical) to the First Access[19]
Min.
Max
Min.
Max.
Min.
Max
Unit
1
1
1
ms
Clock Cycle Time
Clock HIGH
4.0
1.7
1.7
5
6
ns
ns
ns
tCH
2.0
2.0
2.2
2.2
tCL
Clock LOW
Output Times
tCO
Data Output Valid After CLK Rise
Data Output Hold After CLK Rise
Clock to Low-Z[20, 21, 22]
2.6
3.0
3.4
ns
ns
ns
ns
ns
ns
ns
tDOH
1.0
1.0
1.3
1.3
1.3
1.3
tCLZ
tCHZ
Clock to High-Z[20, 21, 22]
2.6
2.6
3.0
3.0
3.4
3.4
tOEV
OE LOW to Output Valid
tOELZ
tOEHZ
Set-up Times
tAS
OE LOW to Output Low-Z[20, 21, 22]
OE HIGH to Output High-Z[20, 21, 22]
0
0
0
2.6
3.0
3.4
Address Set-up Before CLK Rise
ADSC, ADSP Set-up Before CLK Rise
ADV Set-up Before CLK Rise
1.2
1.2
1.2
1.2
1.2
1.2
1.4
1.4
1.4
1.4
1.4
1.4
1.5
1.5
1.5
1.5
1.5
1.5
ns
ns
ns
ns
ns
ns
tADS
tADVS
tWES
GW, BWE, BWX Set-up Before CLK Rise
Data Input Set-up Before CLK Rise
Chip Enable Set-Up Before CLK Rise
tDS
tCES
Hold Times
tAH
Address Hold After CLK Rise
ADSP, ADSC Hold After CLK Rise
ADV Hold After CLK Rise
0.3
0.3
0.3
0.3
0.3
0.3
0.4
0.4
0.4
0.4
0.4
0.4
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
ns
ns
tADH
tADVH
tWEH
GW, BWE, BWX Hold After CLK Rise
Data Input Hold After CLK Rise
Chip Enable Hold After CLK Rise
tDH
tCEH
Notes:
19. This part has a voltage regulator internally; t
is the time that the power needs to be supplied above V (minimum) initially before a read or write operation
DD
POWER
can be initiated.
20. t
, t
,t
, and t
are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
OEHZ
CHZ CLZ OELZ
21. At any given voltage and temperature, t
is less than t
and t
is less than t
to eliminate bus contention between SRAMs when sharing the same
OEHZ
OELZ
CHZ
CLZ
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
22. This parameter is sampled and not 100% tested.
23. Timing reference level is 1.5V when V
= 1.25V when V
= 2.5V.
DDQ
DDQ
24. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
Document #: 38-05546 Rev. *D
Page 19 of 29
CY7C1380DV25
CY7C1382DV25
Switching Waveforms
Read Cycle Timing[25]
t
CYC
CLK
t
t
CL
CH
t
t
ADH
ADS
ADSP
ADSC
t
t
ADH
ADS
t
t
AH
AS
A1
A2
A3
ADDRESS
Burst continued with
new base address
t
t
WEH
WES
GW, BWE,
BWx
Deselect
cycle
t
t
CEH
CES
CE
t
t
ADVH
ADVS
ADV
OE
ADV
suspends
burst.
t
t
OEV
CO
t
t
OEHZ
t
OELZ
t
CHZ
DOH
t
CLZ
t
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
Q(A1)
Data Out (Q)
High-Z
CO
Burst wraps around
to its initial state
Single READ
BURST READ
DON’T CARE
UNDEFINED
Note:
25. On this diagram, when CE is LOW: CE is LOW, CE is HIGH and CE is LOW. When CE is HIGH: CE is HIGH or CE is LOW or CE is HIGH.
1
2
3
1
2
3
Document #: 38-05546 Rev. *D
Page 20 of 29
CY7C1380DV25
CY7C1382DV25
Switching Waveforms (continued)
Write Cycle Timing[25, 26]
t
CYC
CLK
t
t
CL
CH
t
t
ADH
ADS
ADSP
ADSC extends burst
t
t
ADH
ADS
t
t
ADH
ADS
ADSC
ADDRESS
BWE,
t
t
AH
AS
A1
A2
A3
Byte write signals are
ignored for first cycle when
ADSP initiates burst
t
t
WEH
WES
BW
X
t
t
WEH
WES
GW
CE
t
t
CEH
CES
t
t
ADVH
ADVS
ADV
OE
ADV suspends burst
t
t
DH
DS
Data In (D)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
D(A1)
High-Z
t
OEHZ
Data Out (Q)
BURST READ
Single WRITE
BURST WRITE
Extended BURST WRITE
DON’T CARE
UNDEFINED
Note:
26.
Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW LOW.
X
Document #: 38-05546 Rev. *D
Page 21 of 29
CY7C1380DV25
CY7C1382DV25
Switching Waveforms (continued)
Read/Write Cycle Timing[25, 27, 28]
t
CYC
CLK
t
t
CL
CH
t
t
ADH
ADS
ADSP
ADSC
t
t
AH
AS
A1
A2
A3
A4
A5
A6
ADDRESS
BWE,
t
t
WEH
WES
BW
X
t
t
CEH
CES
CE
ADV
OE
t
t
DH
t
CO
DS
t
OELZ
Data In (D)
High-Z
High-Z
D(A3)
D(A5)
D(A6)
t
t
OEHZ
CLZ
Data Out (Q)
Q(A1)
Q(A2)
Q(A4)
Q(A4+1)
Q(A4+2)
Q(A4+3)
Back-to-Back READs
Single WRITE
BURST READ
Back-to-Back
WRITEs
DON’T CARE
UNDEFINED
Notes:
27.
28. GW is HIGH.
ADSP or ADSC.
The data bus (Q) remains in high-Z following a Write cycle, unless a new read access is initiated by
Document #: 38-05546 Rev. *D
Page 22 of 29
CY7C1380DV25
CY7C1382DV25
Switching Waveforms (continued)
ZZ Mode Timing [29, 30]
CLK
t
t
ZZ
ZZREC
ZZ
t
ZZI
I
SUPPLY
I
DDZZ
t
RZZI
ALL INPUTS
(except ZZ)
DESELECT or READ Only
Outputs (Q)
High-Z
DON’T CARE
Notes:
29. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device.
30. DQs are in high-Z when exiting ZZ sleep mode
Document #: 38-05546 Rev. *D
Page 23 of 29
CY7C1380DV25
CY7C1382DV25
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
Package
Diagram
Operating
Range
Ordering Code
Part and Package Type
167
CY7C1380DV25-167AXC
CY7C1382DV25-167AXC
CY7C1380DV25-167BGC
CY7C1382DV25-167BGC
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1380DV25-167BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1382DV25-167BGXC
CY7C1380DV25-167BZC
CY7C1382DV25-167BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1380DV25-167BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-
Free
CY7C1382DV25-167BZXC
CY7C1380DV25-167AXI
CY7C1382DV25-167AXI
CY7C1380DV25-167BGI
CY7C1382DV25-167BGI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Industrial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1380DV25-167BGXI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1382DV25-167BGXI
CY7C1380DV25-167BZI
CY7C1382DV25-167BZI
CY7C1380DV25-167BZXI
CY7C1382DV25-167BZXI
CY7C1380DV25-200AXC
CY7C1382DV25-200AXC
CY7C1380DV25-200BGC
CY7C1382DV25-200BGC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-
Free
200
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1380DV25-200BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1382DV25-200BGXC
CY7C1380DV25-200BZC
CY7C1382DV25-200BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1380DV25-200BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-
Free
CY7C1382DV25-200BZXC
CY7C1380DV25-200AXI
CY7C1382DV25-200AXI
CY7C1380DV25-200BGI
CY7C1382DV25-200BGI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
Industrial
CY7C1380DV25-200BGXI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1382DV25-200BGXI
CY7C1380DV25-200BZI
CY7C1382DV25-200BZI
CY7C1380DV25-200BZXI
CY7C1382DV25-200BZXI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-
Free
Document #: 38-05546 Rev. *D
Page 24 of 29
CY7C1380DV25
CY7C1382DV25
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
250
CY7C1380DV25-250AXC
CY7C1382DV25-250AXC
CY7C1380DV25-250BGC
CY7C1382DV25-250BGC
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1380DV25-250BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1382DV25-250BGXC
CY7C1380DV25-250BZC
CY7C1382DV25-250BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1380DV25-250BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-
Free
CY7C1382DV25-250BZXC
CY7C1380DV25-250AXI
CY7C1382DV25-250AXI
CY7C1380DV25-250BGI
CY7C1382DV25-250BGI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
Industrial
CY7C1380DV25-250BGXI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1382DV25-250BGXI
CY7C1380DV25-250BZI
CY7C1382DV25-250BZI
CY7C1380DV25-250BZXI
CY7C1382DV25-250BZXI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-
Free
Document #: 38-05546 Rev. *D
Page 25 of 29
CY7C1380DV25
CY7C1382DV25
Package Diagrams
100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) (51-85050)
16.00 0.20
14.00 0.10
1.40 0.05
100
81
80
1
0.30 0.08
0.65
TYP.
12° 1°
(8X)
SEE DETAIL
A
30
51
31
50
0.20 MAX.
1.60 MAX.
R 0.08 MIN.
0.20 MAX.
0° MIN.
SEATING PLANE
STAND-OFF
0.05 MIN.
0.15 MAX.
NOTE:
1. JEDEC STD REF MS-026
0.25
GAUGE PLANE
2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH
MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE
R 0.08 MIN.
0.20 MAX.
BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH
3. DIMENSIONS IN MILLIMETERS
0°-7°
0.60 0.15
0.20 MIN.
51-85050-*B
1.00 REF.
DETAIL
A
Document #: 38-05546 Rev. *D
Page 26 of 29
CY7C1380DV25
CY7C1382DV25
Package Diagrams (continued)
119-Ball BGA (14 x 22 x 2.4 mm) (51-85115)
Ø0.05 M C
Ø0.25 M C A B
A1 CORNER
Ø0.75 0.15(119X)
Ø1.00(3X) REF.
1
2
3
4
5
6
7
7
6
5
4
3 2 1
A
B
C
D
E
A
B
C
D
E
F
F
G
H
G
H
J
K
L
J
K
L
M
N
P
R
T
M
N
P
R
T
U
U
1.27
0.70 REF.
A
3.81
12.00
7.62
B
14.00 0.20
0.15(4X)
30° TYP.
51-85115-*B
SEATING PLANE
C
Document #: 38-05546 Rev. *D
Page 27 of 29
CY7C1380DV25
CY7C1382DV25
Package Diagrams (continued)
165-Ball FBGA (13 x 15 x 1.4 mm) (51-85180)
BOTTOM VIEW
PIN 1 CORNER
TOP VIEW
Ø0.05 M C
PIN 1 CORNER
Ø0.25 M C A B
-0.06
Ø0.50
(165X)
+0.14
1
2
3
4
5
6
7
8
9
10
11
11 10
9
8
7
6
5
4
3
2
1
A
A
B
B
C
D
C
D
E
E
F
F
G
G
H
J
H
J
K
K
L
L
M
M
N
P
R
N
P
R
A
A
1.00
5.00
10.00
13.00 0.10
B
B
13.00 0.10
0.15(4X)
NOTES :
SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD)
PACKAGE WEIGHT : 0.475g
JEDECREFERENCE: MO-216 / DESIGN 4.6C
PACKAGE CODE : BB0AC
SEATING PLANE
C
51-85180-*A
486 is a trademark, and Intel and Pentium are registered trademarks, of Intel Corporation. All product and company names
mentioned in this document are the trademarks of their respective holders.
Document #: 38-05546 Rev. *D
Page 28 of 29
© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1380DV25
CY7C1382DV25
Document History Page
Document Title: CY7C1380DV25/CY7C1382DV25 18-Mbit (512K x 36/1M x 18)
Pipelined SRAM
Document Number: 38-05546
Issue Orig. of
REV. ECN NO.
Date
Change
Description of Change
**
254515 See ECN RKF New data sheet
*A
288531 See ECN SYT Edited description under “IEEE 1149.1 Serial Boundary Scan (JTAG)” for non-
compliance with 1149.1
Removed 225 and 133 Mhz Speed Bin
Added lead-free information for 100-Pin TQFP, 119 BGA and 165 FBGA Packages
Added comment of ‘Lead-free BG packages availability’ below the Ordering Infor-
mation
*B
326078 See ECN
PCI Address expansion pins/balls in the pinouts for all packages are modified as per
JEDEC standard
Added description on EXTEST Outut Bus Tri-State
Changed description on the Tap Instruction Set Overview and Extest
Changed Device Width (23:18) for 119-BGA from 000000 to 101000
Added seperate row for 165 -FBGA Device Width (23:18)
Changed ΘJA and ΘJC for TQFP Package from 31 and 6 °C/W to 28.66 and 4.08 °C/W
respectively
Changed ΘJA and ΘJC for BGA Package from 45 and 7 °C/W to 23.8 and 6.2 °C/W
respectively
Changed ΘJA and ΘJC for FBGA Package from 46 and 3 °C/W to 20.7 and 4.0 °C/W
respectively
Modified VOL, VOH test conditions
Removed comment of ‘Lead-free BG packages availability’ below the Ordering Infor-
mation
Updated Ordering Information Table
*C
418125 See ECN NXR Converted from Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901
North First Street” to “198 Champion Court”
Changed the description of IX from Input Load Current to Input Leakage Current on
page# 18
Changed the IX current values of MODE on page # 18 from –5 µA and 30 µA
to –30 µA and 5 µA
Changed the IX current values of ZZ on page # 18 from –30 µA and 5 µA
to –5 µA and 30 µA
Changed VIH < VDD to VIH < VDDon page # 18
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
*D
475009 See ECN VKN Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND
Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP AC Switching
Characteristics table.
Updated the Ordering Information table.
Document #: 38-05546 Rev. *D
Page 29 of 29
相关型号：
CY7C1382F-167AXI
Cache SRAM, 1MX18, 3.4ns, CMOS, PQFP100, 20 X 14 MM, 1.4 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
CYPRESS
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