CY7C1527JV18-300BZI [CYPRESS]
72-Mbit DDR-II SRAM 2-Word Burst Architecture; 72兆位的DDR - II SRAM的2字突发架构型号: | CY7C1527JV18-300BZI |
厂家: | CYPRESS |
描述: | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
文件: | 总26页 (文件大小:630K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
72-Mbit DDR-II SRAM 2-Word
Burst Architecture
Features
Functional Description
■ 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)
■ 300 MHz clock for high bandwidth
The CY7C1516JV18, CY7C1527JV18, CY7C1518JV18, and
CY7C1520JV18 are 1.8V Synchronous Pipelined SRAM
equipped with DDR-II architecture. The DDR-II consists of an
SRAM core with advanced synchronous peripheral circuitry and
a 1-bit burst counter. Addresses for read and write are latched
on alternate rising edges of the input (K) clock. Write data is
registered on the rising edges of both K and K. Read data is
driven on the rising edges of C and C if provided, or on the rising
edge of K and K if C/C are not provided. Each address location
is associated with two 8-bit words in the case of CY7C1516JV18
and two 9-bit words in the case of CY7C1527JV18 that burst
sequentially into or out of the device. The burst counter always
starts with a “0” internally in the case of CY7C1516JV18 and
CY7C1527JV18. On CY7C1518JV18 and CY7C1520JV18, the
burst counter takes in the least significant bit of the external
address and bursts two 18-bit words in the case of
CY7C1518JV18 and two 36-bit words in the case of
CY7C1520JV18 sequentially into or out of the device.
■ 2-word burst for reducing address bus frequency
■ Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) at 300 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Synchronous internally self-timed writes
■ DDR-II operates with 1.5 cycle read latency when Delay Lock
Loop (DLL) is enabled
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs (Q, sharing the same
physical pins as the data inputs D) are tightly matched to the two
output echo clocks CQ/CQ, eliminating the need for separately
capturing data from each individual DDR SRAM in the system
design. Output data clocks (C/C) enable maximum system
clocking and data synchronization flexibility.
■ Operates like a DDR-I device with 1 cycle read latency in DLL
off mode
■ 1.8V core power supply with HSTL inputs and outputs
■ Variable drive HSTL output buffers
■ Expanded HSTL output voltage (1.4V–VDD
)
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1516JV18 – 8M x 8
CY7C1527JV18 – 8M x 9
CY7C1518JV18 – 4M x 18
CY7C1520JV18 – 2M x 36
Selection Guide
Description
Maximum Operating Frequency
300 MHz
300
Unit
MHz
mA
Maximum Operating Current
x8
x9
1035
1035
1045
1055
x18
x36
Cypress Semiconductor Corporation
Document Number: 001-12559 Rev. *C
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised March 10, 2008
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
Logic Block Diagram (CY7C1516JV18)
Write
Reg
Write
Reg
22
A
(21:0)
Address
Register
8
LD
K
K
Output
R/W
CLK
Logic
Gen.
Control
C
C
DOFF
Read Data Reg.
CQ
CQ
16
V
8
REF
8
8
Reg.
Reg.
Reg.
Control
Logic
R/W
8
8
NWS
DQ
[1:0]
[7:0]
Logic Block Diagram (CY7C1527JV18)
Write
Reg
Write
Reg
22
A
(21:0)
Address
Register
9
LD
K
K
Output
Logic
Control
CLK
R/W
Gen.
C
C
DOFF
Read Data Reg.
CQ
CQ
18
V
9
REF
9
9
Reg.
Reg.
Reg.
Control
Logic
R/W
9
9
BWS
DQ
[0]
[8:0]
Document Number: 001-12559 Rev. *C
Page 2 of 26
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
Logic Block Diagram (CY7C1518JV18)
Burst
Logic
A0
Write
Reg
Write
Reg
22 21
A
A
(21:0)
Address
Register
(21:1)
18
LD
K
K
Output
R/W
CLK
Logic
Gen.
Control
C
C
DOFF
Read Data Reg.
CQ
CQ
36
18
V
REF
18
18
Reg.
Reg.
Reg.
Control
Logic
R/W
18
18
BWS
DQ
[1:0]
[17:0]
Logic Block Diagram (CY7C1520JV18)
Burst
Logic
A0
Write
Reg
Write
Reg
21 20
A
A
(20:0)
Address
Register
(20:1)
36
LD
K
K
Output
Logic
Control
CLK
R/W
Gen.
C
C
DOFF
Read Data Reg.
CQ
CQ
72
36
V
REF
36
36
Reg.
Reg.
Reg.
Control
Logic
R/W
36
36
BWS
DQ
[3:0]
[35:0]
Document Number: 001-12559 Rev. *C
Page 3 of 26
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CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
Pin Configuration
The pin configuration for CY7C1516JV18, CY7C1527JV18, CY7C1518JV18, and CY7C1520JV18 follow. [1]
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1516JV18 (8M x 8)
1
CQ
NC
NC
NC
NC
NC
NC
DOFF
NC
NC
NC
NC
NC
NC
TDO
2
A
3
A
4
5
NWS1
NC/288M
A
6
7
NC/144M
NWS0
A
8
9
A
10
A
11
CQ
DQ3
NC
NC
DQ2
NC
NC
ZQ
A
B
C
D
E
F
R/W
A
K
LD
NC
NC
NC
NC
NC
NC
VREF
NC
NC
DQ6
NC
NC
NC
TCK
NC
NC
NC
DQ4
NC
DQ5
VDDQ
NC
NC
NC
NC
NC
DQ7
A
K
A
NC
NC
NC
NC
NC
NC
VDDQ
NC
NC
NC
NC
NC
NC
A
NC
NC
NC
NC
NC
NC
VREF
DQ1
NC
NC
NC
NC
NC
TMS
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
A
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
G
H
J
NC
NC
DQ0
NC
NC
NC
TDI
K
L
M
N
P
R
A
C
A
A
A
C
A
A
CY7C1527JV18 (8M x 9)
1
CQ
NC
NC
NC
NC
NC
NC
DOFF
NC
NC
NC
NC
NC
NC
TDO
2
A
3
A
4
5
NC
6
7
NC/144M
BWS0
A
8
9
A
10
A
11
CQ
DQ3
NC
A
B
C
D
E
F
R/W
A
K
LD
NC
NC
NC
NC
NC
NC
VREF
NC
NC
DQ6
NC
NC
NC
TCK
NC
NC
NC
DQ4
NC
DQ5
VDDQ
NC
NC
NC
NC
NC
DQ7
A
NC/288M
A
K
A
NC
NC
NC
NC
NC
NC
VDDQ
NC
NC
NC
NC
NC
NC
A
NC
NC
NC
NC
NC
NC
VREF
DQ1
NC
NC
NC
NC
NC
TMS
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
A
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
NC
DQ2
NC
G
H
J
NC
ZQ
NC
K
L
NC
DQ0
NC
M
N
P
R
NC
A
C
A
DQ8
TDI
A
A
C
A
A
Note
1. NC/144M and NC/288M are not connected to the die and can be tied to any voltage level.
Document Number: 001-12559 Rev. *C
Page 4 of 26
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
Pin Configuration
The pin configuration for CY7C1516JV18, CY7C1527JV18, CY7C1518JV18, and CY7C1520JV18 follow. [1] (continued)
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1518JV18 (4M x 18)
1
CQ
NC
NC
NC
NC
NC
NC
DOFF
NC
NC
NC
NC
NC
NC
TDO
2
A
3
4
5
BWS1
NC/288M
A
6
7
NC/144M
BWS0
A
8
9
A
10
A
11
CQ
A
B
C
D
E
F
A
R/W
A
K
LD
DQ9
NC
NC
K
A
NC
NC
NC
NC
NC
NC
VDDQ
NC
NC
NC
NC
NC
NC
A
NC
DQ8
NC
NC
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
A0
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
A
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
DQ7
NC
NC
DQ10
DQ11
NC
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
NC
NC
NC
DQ6
DQ5
NC
DQ12
NC
NC
G
H
J
DQ13
VDDQ
NC
NC
VREF
NC
VREF
DQ4
D3
ZQ
NC
K
L
NC
DQ14
NC
DQ3
DQ2
NC
DQ15
NC
NC
M
N
P
R
NC
DQ1
NC
NC
DQ16
DQ17
A
NC
NC
A
C
A
NC
DQ0
TDI
TCK
A
A
C
A
A
TMS
CY7C1520JV18 (2M x 36)
1
CQ
NC
NC
NC
NC
NC
NC
DOFF
NC
NC
NC
NC
NC
NC
TDO
2
NC/144M
DQ27
NC
3
4
5
BWS2
BWS3
A
6
7
BWS1
BWS0
A
8
9
A
10
A
11
A
B
C
D
E
F
A
R/W
A
K
LD
CQ
DQ18
DQ28
DQ19
DQ20
DQ21
DQ22
VDDQ
DQ32
DQ23
DQ24
DQ34
DQ25
DQ26
A
K
A
NC
NC
NC
NC
NC
NC
VDDQ
NC
NC
NC
NC
NC
NC
A
NC
DQ8
DQ7
DQ16
DQ6
DQ5
DQ14
ZQ
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
A0
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
A
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
DQ17
NC
DQ29
NC
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
DQ15
NC
DQ30
DQ31
VREF
NC
G
H
J
NC
VREF
DQ13
DQ12
NC
DQ4
DQ3
DQ2
DQ1
DQ10
DQ0
TDI
K
L
NC
DQ33
NC
M
N
P
R
DQ11
NC
DQ35
NC
A
C
A
DQ9
TMS
TCK
A
A
C
A
A
Document Number: 001-12559 Rev. *C
Page 5 of 26
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
Pin Definitions
Pin Name
IO
Pin Description
DQ[x:0]
Input Output- Data Input Output Signals. Inputs are sampled on the rising edge of K and K clocks during valid write
Synchronous operations. These pins drive out the requested data when the read operation is active. Valid data is driven
out on the rising edge of both the C and C clocks during read operations or K and K when in single clock
mode. When read access is deselected, Q[x:0] are automatically tri-stated.
CY7C1516JV18 − DQ[7:0]
CY7C1527JV18 − DQ[8:0]
CY7C1518JV18 − DQ[17:0]
CY7C1520JV18 − DQ[35:0]
LD
Input-
Synchronous Load. This input is brought LOW when a bus cycle sequence is defined. This definition
Synchronous includes address and read/write direction. All transactions operate on a burst of 2 data.
Input-
Nibble Write Select 0, 1 − Active LOW (CY7C1516JV18 only). Sampled on the rising edge of the K
NWS0,
NWS1
Synchronous and K clocks during Write operations. Used to select which nibble is written into the device during the
current portion of the Write operations. Nibbles not written remain unaltered.
NWS0 controls D[3:0] and NWS1 controls D[7:4]
.
All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select
ignores the corresponding nibble of data and it is not written into the device.
BWS0,
BWS1,
BWS2,
BWS3
Input-
Byte Write Select 0, 1, 2, and 3 − Active LOW. Sampled on the rising edge of the K and K clocks during
Synchronous write operations. Used to select which byte is written into the device during the current portion of the write
operations. Bytes not written remain unaltered.
CY7C1527JV18 − BWS0 controls D[8:0]
CY7C1518JV18 − BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C1520JV18 − BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3 controls
D[35:27]
.
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and it is not written into the device.
A, A0
Input-
Address Inputs. These address inputs are multiplexed for both read and write operations. Internally, the
Synchronous device is organized as 8M x 8 (2 arrays each of 4M x 8) for CY7C1516JV18 and 8M x 9 (2 arrays each
of 4M x9) for CY7C1527JV18, 4M x 18 (2 arrays each of 2M x 18) for CY7C1518JV18, and 2M x 36 (2
arrays each of 1M x 36) for CY7C1520JV18.
CY7C1516JV18 – Since the least significant bit of the address internally is a “0,” only 22 external address
inputs are needed to access the entire memory array.
CY7C1527JV18 – Since the least significant bit of the address internally is a “0,” only 22 external address
inputs are needed to access the entire memory array.
CY7C1518JV18 – A0 is the input to the burst counter. These are incremented in a linear fashion internally.
22 address inputs are needed to access the entire memory array.
CY7C1520JV18 – A0 is the input to the burst counter. These are incremented in a linear fashion internally.
21 address inputs are needed to access the entire memory array. All the address inputs are ignored when
the appropriate port is deselected.
R/W
C
Input-
Synchronous Read or Write Input. When LD is LOW, this input designates the access type (read when
Synchronous R/W is HIGH, write when R/W is LOW) for loaded address. R/W must meet the setup and hold times
around edge of K.
Input Clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board back
to the controller. See application example for further details.
C
Input Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board back
to the controller. See application example for further details.
K
Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising
edge of K.
Input Clock Negative Input Clock Input. K is used to capture synchronous data being presented to the device and
K
to drive out data through Q[x:0] when in single clock mode.
Document Number: 001-12559 Rev. *C
Page 6 of 26
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
Pin Definitions (continued)
Pin Name
IO
Pin Description
CQ
Output Clock CQ is Referenced with Respect to C. This is a free running clock and is synchronized to the input clock
for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to K. The timing
for the echo clocks is shown in the AC Timing table.
Output Clock CQ is Referenced with Respect to C. This is a free running clock and is synchronized to the input clock
for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to K. The timing
for the echo clocks is shown in the AC Timing table.
CQ
ZQ
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus
impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected
between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which enables the
minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
DOFF
Input
DLL Turn Off − Active LOW. Connecting this pin to ground turns off the DLL inside the device. The timing
in the DLL turned off operation differs from those listed in this data sheet. For normal operation, this pin
can be connected to a pull up through a 10 KΩ or less pull up resistor. The device behaves in DDR-I
mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up to 167
MHz with DDR-I timing.
TDO
TCK
TDI
Output
Input
Input
Input
N/A
TDO for JTAG.
TCK Pin for JTAG.
TDI Pin for JTAG.
TMS
NC
TMS Pin for JTAG.
Not Connected to the Die. Can be tied to any voltage level.
Not Connected to the Die. Can be tied to any voltage level.
Not Connected to the Die. Can be tied to any voltage level.
Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC
V
SS/144M
Input
Input
Input-
VSS/288M
VREF
Reference measurement points.
VDD
VSS
Power Supply Power Supply Inputs to the Core of the Device.
Ground
Ground for the Device.
VDDQ
Power Supply Power Supply Inputs for the Outputs of the Device.
Document Number: 001-12559 Rev. *C
Page 7 of 26
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
presented to the burst counter. The burst counter increments the
address in a linear fashion. On the following K clock rise, the data
presented to D[17:0] is latched and stored into the 18-bit write
data register, provided BWS[1:0] are both asserted active. On the
subsequent rising edge of the Negative Input Clock (K) the infor-
mation presented to D[17:0] is also stored into the write data
register, provided BWS[1:0] are both asserted active. The 36 bits
of data are then written into the memory array at the specified
location. Write accesses can be initiated on every rising edge of
the positive input clock (K). Doing so pipelines the data flow such
that 18 bits of data can be transferred into the device on every
rising edge of the input clocks (K and K).
Functional Overview
The CY7C1516JV18, CY7C1527JV18, CY7C1518JV18, and
CY7C1520JV18 are synchronous pipelined Burst SRAMs
equipped with a DDR interface, which operates with a read
latency of one and a half cycles when DOFF pin is tied HIGH.
When DOFF pin is set LOW or connected to VSS the device
behaves in DDR-I mode with a read latency of one clock cycle.
Accesses are initiated on the rising edge of the positive input
clock (K). All synchronous input timing is referenced from the
rising edge of the input clocks (K and K) and all output timing is
referenced to the rising edge of the output clocks (C/C, or K/K
when in single clock mode).
When the write access is deselected, the device ignores all
inputs after the pending write operations have been completed.
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the rising edge of the input clocks (K and K). All
synchronous data outputs (Q[x:0]) pass through output registers
controlled by the rising edge of the output clocks (C/C, or K/K
when in single clock mode).
Byte Write Operations
Byte write operations are supported by the CY7C1518JV18. A
write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS0 and
BWS1, which are sampled with each set of 18-bit data words.
Asserting the byte write select input during the data portion of a
write latches the data being presented and writes it into the
device. Deasserting the byte write select input during the data
portion of a write enables the data stored in the device for that
byte to remain unaltered. This feature can be used to simplify
read, modify, or write operations to a byte write operation.
All synchronous control (R/W, LD, BWS[0:X]) inputs pass through
input registers controlled by the rising edge of the input clock (K).
CY7C1518JV18 is described in the following sections. The same
basic descriptions apply to CY7C1516JV18, CY7C1527JV18,
and CY7C1520JV18.
Read Operations
The CY7C1518JV18 is organized internally as a single array of
4M x 18. Accesses are completed in a burst of 2 sequential 18-bit
data words. Read operations are initiated by asserting R/W
HIGH and LD LOW at the rising edge of the positive input clock
(K). The address presented to address inputs is stored in the
read address register and the least significant bit of the address
is presented to the burst counter. The burst counter increments
the address in a linear fashion. Following the next K clock rise,
the corresponding 18-bit word of data from this address location
is driven onto the Q[17:0] using C as the output timing reference.
On the subsequent rising edge of C the next 18-bit data word
from the address location generated by the burst counter is
driven onto the Q[17:0]. The requested data is valid 0.45 ns from
the rising edge of the output clock (C or C, or K and K when in
single clock mode, 200 MHz, 250 MHz, and 300 MHz device). To
maintain the internal logic, each read access must be allowed to
complete. Read accesses can be initiated on every rising edge
of the positive input clock (K).
Single Clock Mode
The CY7C1518JV18 can be used with a single clock that
controls both the input and output registers. In this mode, the
device recognizes only a single pair of input clocks (K and K) that
control both the input and output registers. This operation is
identical to the operation if the device had zero skew between
the K/K and C/C clocks. All timing parameters remain the same
in this mode. To use this mode of operation, the user must tie C
and C HIGH at power on. This function is a strap option and not
alterable during device operation.
DDR Operation
The CY7C1518JV18 enables high-performance operation
through high clock frequencies (achieved through pipelining) and
DDR mode of operation. The CY7C1518JV18 requires a single
No Operation (NOP) cycle during transition from a read to a write
cycle. At higher frequencies, some applications may require a
second NOP cycle to avoid contention.
When read access is deselected, the CY7C1518JV18 first
completes the pending read transactions. Synchronous internal
circuitry automatically tri-states the output following the next
rising edge of the positive output clock (C). This enables for a
transition between devices without the insertion of wait states in
a depth expanded memory.
If a read occurs after a write cycle, address and data for the write
are stored in registers. The write information must be stored
because the SRAM cannot perform the last word write to the
array without conflicting with the read. The data stays in this
register until the next write cycle occurs. On the first write cycle
after the read(s), the stored data from the earlier write is written
into the SRAM array. This is called a posted write.
Write Operations
Write operations are initiated by asserting R/W LOW and LD
LOW at the rising edge of the positive input clock (K). The
address presented to address inputs is stored in the write
address register and the least significant bit of the address is
If a read is performed on the same address on which a write is
performed in the previous cycle, the SRAM reads out the most
current data. The SRAM does this by bypassing the memory
array and reading the data from the registers.
Document Number: 001-12559 Rev. *C
Page 8 of 26
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
Depth Expansion
DDR-II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free-running clocks and are
synchronized to the output clock of the DDR-II. In single clock
mode, CQ is generated with respect to K and CQ is generated
with respect to K. The timing for the echo clocks is shown in the
Switching Characteristics on page 22.
Depth expansion requires replicating the LD control signal for
each bank. All other control signals can be common between
banks as appropriate.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to allow the SRAM to adjust its output
driver impedance. The value of RQ must be 5x the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175Ω and 350Ω, with VDDQ = 1.5V. The
output impedance is adjusted every 1024 cycles upon power up
to account for drifts in supply voltage and temperature.
DLL
These chips utilize a DLL that is designed to function between
120 MHz and the specified maximum clock frequency. During
power up, when the DOFF is tied HIGH, the DLL is locked after
1024 cycles of stable clock. The DLL can also be reset by
slowing or stopping the input clock K and K for a minimum of 30
ns. However, it is not necessary to reset the DLL to lock to the
desired frequency. The DLL automatically locks 1024 clock
cycles after a stable clock is presented. The DLL may be
disabled by applying ground to the DOFF pin. When the DLL is
turned off, the device behaves in DDR-I mode (with one cycle
latency and a longer access time). For information refer to the
application note DLL Considerations in QDRII™/DDRII.
Echo Clocks
Echo clocks are provided on the DDR-II to simplify data capture
on high-speed systems. Two echo clocks are generated by the
Application Example
Figure 1 shows two DDR-II used in an application.
Figure 1. Application Example
R = 250ohms
R = 250ohms
SRAM#2
SRAM#1
ZQ
ZQ
DQ
A
DQ
A
CQ/CQ#
LD# R/W# C C# K K#
CQ/CQ#
LD# R/W# C C# K
K#
DQ
Addresses
Cycle Start#
R/W#
Return CLK
Source CLK
Return CLK#
Source CLK#
BUS
MASTER
(CPU
or
Vterm = 0.75V
R = 50ohms
Vterm = 0.75V
ASIC)
Echo Clock1/Echo Clock#1
Echo Clock2/Echo Clock#2
Document Number: 001-12559 Rev. *C
Page 9 of 26
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
Truth Table
The truth table for the CY7C1516JV18, CY7C1527JV18, CY7C1518JV18, and CY7C1520JV18 follows. [2, 3, 4, 5, 6, 7]
Operation
K
LD
R/W
DQ
DQ
Write Cycle:
Load address; wait one cycle;
L-H
L
L
D(A1) at K(t + 1) ↑ D(A2) at K(t + 1) ↑
input write data on consecutive K and K rising edges.
Read Cycle:
Load address; wait one and a half cycle;
L-H
L
H
Q(A1) at C(t + 1)↑ Q(A2) at C(t + 2) ↑
read data on consecutive C and C rising edges.
NOP: No Operation
L-H
H
X
X
X
High-Z
High-Z
Standby: Clock Stopped
Stopped
Previous State
Previous State
Burst Address Table
(CY7C1518JV18, CY7C1520JV18)
First Address (External)
Second Address (Internal)
X..X0
X..X1
X..X1
X..X0
Write Cycle Descriptions
The write cycle description table for CY7C1516JV18 and CY7C1518JV18 follows. [2, 8]
BWS0/ BWS1/
K
Comments
K
NWS0 NWS1
L
L
L–H
–
During the data portion of a write sequence:
CY7C1516JV18 − both nibbles (D[7:0]) are written into the device.
CY7C1518JV18 − both bytes (D[17:0]) are written into the device.
L
L
–
L–H
–
L-H During the data portion of a write sequence:
CY7C1516JV18 − both nibbles (D[7:0]) are written into the device.
CY7C1518JV18 − both bytes (D[17:0]) are written into the device.
L
H
H
L
–
During the data portion of a write sequence:
CY7C1516JV18 − only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1518JV18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L
L–H During the data portion of a write sequence:
CY7C1516JV18 − only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1518JV18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
H
H
L–H
–
–
During the data portion of a write sequence:
CY7C1516JV18 − only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1518JV18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
L
L–H During the data portion of a write sequence:
CY7C1516JV18 − only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1518JV18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
H
H
H
H
L–H
–
–
No data is written into the devices during this portion of a write operation.
L–H No data is written into the devices during this portion of a write operation.
Notes
2. X = “Don’t Care,” H = Logic HIGH, L = Logic LOW, ↑ represents rising edge.
3. Device powers up deselected with the outputs in a tri-state condition.
4. On CY7C1518JV18 and CY7C1520JV18, “A1” represents address location latched by the devices when transaction was initiated and “A2” represents the addresses
sequence in the burst. On CY7C1516JV18 and CY7C1527JV18, “A1” represents A + ‘0’ and “A2” represents A + ‘1’.
5. “t” represents the cycle at which a read/write operation is started. t + 1 and t + 2 are the first and second clock cycles succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically.
8. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS , NWS , BWS , BWS , BWS , and BWS can be altered on
0
1
0
1
2
3
different portions of a write cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-12559 Rev. *C
Page 10 of 26
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
Write Cycle Descriptions
The write cycle description table for CY7C1527JV18 follows. [2, 8]
BWS0
K
L–H
–
K
Comments
During the Data portion of a write sequence, the single byte (D[8:0]) is written into the device.
L
L
–
L–H During the Data portion of a write sequence, the single byte (D[8:0]) is written into the device.
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
H
H
L–H
–
–
Write Cycle Descriptions
The write cycle description table for CY7C1520JV18 follows. [2, 8]
BWS0 BWS1 BWS2 BWS3
K
K
Comments
L
L
L
L
L–H
–
During the Data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
L
L
L
–
L–H
–
L–H During the Data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
H
H
L
H
H
H
H
L
H
H
H
H
H
H
L
–
During the Data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L
L–H During the Data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
H
H
H
H
H
H
L–H
–
–
During the Data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
L
L–H During the Data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
H
H
H
H
L–H
–
–
During the Data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
L
L–H During the Data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
H
H
L–H
–
–
During the Data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
L
L–H During the Data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
H
H
H
H
H
H
H
H
L–H
–
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Document Number: 001-12559 Rev. *C
Page 11 of 26
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CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
Instruction Register
IEEE 1149.1 Serial Boundary Scan (JTAG)
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in TAP Controller Block Diagram on
page 15. Upon power up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.
These SRAMs incorporate a serial boundary scan Test Access
Port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8V IO logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are inter-
nally pulled up and may be unconnected. They may alternatively
be connected to VDD through a pull up resistor. TDO must be left
unconnected. Upon power up, the device comes up in a reset
state, which does not interfere with the operation of the device.
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (VSS) when
the BYPASS instruction is executed.
Test Access Port—Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Boundary Scan Register
Test Mode Select (TMS)
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up inter-
nally, resulting in a logic HIGH level.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see the TAP Controller State
Diagram on page 14. TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
The Boundary Scan Order on page 18 shows the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Identification (ID) Register
Test Data-Out (TDO)
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 17.
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see Instruction Codes on page 17).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This Reset does not affect the operation of the
SRAM and can be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a high-Z state.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction
Codes on page 17. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in this section in detail.
TAP Registers
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Document Number: 001-12559 Rev. *C
Page 12 of 26
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
IDCODE
PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.
The IDCODE instruction loads a vendor-specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.
power up or whenever the TAP controller is given
Test-Logic-Reset state.
a
BYPASS
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
SAMPLE Z
The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a High-Z state until the next command is given during the
Update IR state.
EXTEST
The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.
EXTEST OUTPUT BUS TRI-STATE
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tri-state mode.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output undergoes a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This does not harm the device, but
there is no guarantee as to the value that is captured.
Repeatable results may not be possible.
The boundary scan register has a special bit located at bit #108.
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a
High-Z condition.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture setup plus hold
times (tCS and tCH). The SRAM clock input might not be captured
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that cell,
during the Shift-DR state. During Update-DR, the value loaded
into that shift-register cell latches into the preload register. When
the EXTEST instruction is entered, this bit directly controls the
output Q-bus pins. Note that this bit is preset HIGH to enable the
output when the device is powered up, and also when the TAP
controller is in the Test-Logic-Reset state.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Document Number: 001-12559 Rev. *C
Page 13 of 26
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
TAP Controller State Diagram
The state diagram for the TAP controller follows. [9]
TEST-LOGIC
1
RESET
0
1
1
1
SELECT
TEST-LOGIC/
SELECT
0
IR-SCAN
IDLE
DR-SCAN
0
0
1
1
CAPTURE-DR
0
CAPTURE-IR
0
0
1
0
1
SHIFT-DR
1
SHIFT-IR
1
EXIT1-DR
0
EXIT1-IR
0
0
0
PAUSE-DR
1
PAUSE-IR
1
0
0
EXIT2-DR
1
EXIT2-IR
1
UPDATE-IR
0
UPDATE-DR
1
1
0
Note
9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document Number: 001-12559 Rev. *C
Page 14 of 26
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
TAP Controller Block Diagram
0
Bypass Register
2
1
1
1
0
0
0
Selection
TDI
Selection
Circuitry
TDO
Instruction Register
Circuitry
31 30
29
.
.
2
Identification Register
.
108
.
.
.
2
Boundary Scan Register
TCK
TMS
TAP Controller
TAP Electrical Characteristics
Over the Operating Range [10, 11, 12]
Parameter
VOH1
Description
Output HIGH Voltage
Test Conditions
IOH = −2.0 mA
Min
1.4
1.6
Max
Unit
V
V
VOH2
VOL1
VOL2
VIH
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
IOH = −100 μA
IOL = 2.0 mA
IOL = 100 μA
0.4
0.2
V
V
0.65VDD VDD + 0.3
V
VIL
Input LOW Voltage
–0.3
–5
0.35VDD
5
V
IX
Input and Output Load Current
GND ≤ VI ≤ VDD
μA
Notes
10. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table.
11. Overshoot: V (AC) < V + 0.85V (Pulse width less than t /2).
/2), Undershoot: V (AC) > −1.5V (Pulse width less than t
IH
DDQ
CYC
IL
CYC
12. All Voltage referenced to Ground.
Document Number: 001-12559 Rev. *C
Page 15 of 26
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
TAP AC Switching Characteristics
Over the Operating Range [13, 14]
Parameter
Description
Min
Max
Unit
ns
tTCYC
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH
50
tTF
20
MHz
ns
tTH
20
20
tTL
TCK Clock LOW
ns
Setup Times
tTMSS
tTDIS
TMS Setup to TCK Clock Rise
TDI Setup to TCK Clock Rise
Capture Setup to TCK Rise
5
5
5
ns
ns
ns
tCS
Hold Times
tTMSH
tTDIH
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
5
5
5
ns
ns
ns
tCH
Capture Hold after Clock Rise
Output Times
tTDOV
tTDOX
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
10
ns
ns
0
TAP Timing and Test Conditions
Figure 2 shows the TAP timing and test conditions. [14]
Figure 2. TAP Timing and Test Conditions
0.9V
ALL INPUT PULSES
1.8V
50Ω
0.9V
TDO
0V
Z = 50
Ω
0
C = 20 pF
L
t
t
TH
TL
GND
(a)
Test Clock
TCK
t
TCYC
t
TMSH
t
TMSS
Test Mode Select
TMS
t
TDIS
t
TDIH
Test Data In
TDI
Test Data Out
TDO
t
TDOV
t
TDOX
Notes
13. t and t refer to the setup and hold time requirements of latching data from the boundary scan register.
CS
CH
14. Test conditions are specified using the load in TAP AC Test Conditions. t /t = 1 ns.
R
F
Document Number: 001-12559 Rev. *C
Page 16 of 26
[+] Feedback
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
Identification Register Definitions
Value
Instruction Field
Description
CY7C1516JV18
CY7C1527JV18
001
CY7C1518JV18
001
CY7C1520JV18
Revision Number
(31:29)
001
001
Version number.
Cypress Device ID 11010100010000100 11010100010001100 11010100010010100 11010100010100100 Defines the type of
(28:12)
SRAM.
Cypress JEDEC ID
(11:1)
00000110100
1
00000110100
1
00000110100
1
00000110100
1
Allows unique
identification of
SRAM vendor.
ID Register
Presence (0)
Indicates the
presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size
Instruction
Bypass
3
1
ID
32
109
Boundary Scan
Instruction Codes
Instruction
EXTEST
Code
000
Description
Captures the input and output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the input and output contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED
011
100
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
Captures the input and output ring contents. Places the boundary scan register between TDI
and TDO. Does not affect the SRAM operation.
RESERVED
RESERVED
BYPASS
101
110
111
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
Document Number: 001-12559 Rev. *C
Page 17 of 26
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CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
Boundary Scan Order
Bit #
0
Bump ID
6R
Bit #
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
Bump ID
10G
9G
Bit #
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
Bump ID
6A
5B
5A
4A
5C
4B
3A
2A
1A
2B
3B
1C
1B
3D
3C
1D
2C
3E
2D
2E
1E
2F
Bit #
84
Bump ID
1J
1
6P
85
2J
2
6N
11F
11G
9F
86
3K
3
7P
87
3J
4
7N
88
2K
5
7R
10F
11E
10E
10D
9E
89
1K
6
8R
90
2L
7
8P
91
3L
8
9R
92
1M
1L
9
11P
10P
10N
9P
93
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
10C
11D
9C
94
3N
95
3M
1N
96
10M
11N
9M
9D
97
2M
3P
11B
11C
9B
98
99
2N
9N
100
101
102
103
104
105
106
107
108
2P
11L
11M
9L
10B
11A
10A
9A
1P
3R
4R
10L
11K
10K
9J
4P
8B
5P
7C
3F
5N
6C
1G
1F
5R
9K
8A
Internal
10J
11J
11H
7A
3G
2G
1H
7B
6B
Document Number: 001-12559 Rev. *C
Page 18 of 26
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CY7C1518JV18, CY7C1520JV18
DLL Constraints
Power Up Sequence in DDR-II SRAM
■ DLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as tKC Var
DDR-II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations. During
power up, when the DOFF is tied HIGH, the DLL is locked after
1024 cycles of stable clock.
.
■ The DLL functions at frequencies down to 120 MHz.
■ If the input clock is unstable and the DLL is enabled, then the
DLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide 1024 cycles stable clock
to relock to the desired clock frequency.
Power Up Sequence
■ ApplypowerwithDOFFtiedHIGH(allotherinputscanbeHIGH
or LOW)
❐ Apply VDD before VDDQ
❐ Apply VDDQ before VREF or at the same time as VREF
■ Provide stable power and clock (K, K) for 1024 cycles to lock
the DLL.
Power Up Waveforms
K
K
Unstable Clock
> 1024 Stable clock
Stable)
DDQ
Start Normal
Operation
/
V
Clock Start (Clock Starts after V
DD
Stable (< +/- 0.1V DC per 50ns )
/
/
V
VDDQ
V
VDD
DD
DDQ
Fix High (or tied to V
DDQ
)
DOFF
Document Number: 001-12559 Rev. *C
Page 19 of 26
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CY7C1518JV18, CY7C1520JV18
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V
Latch up Current..................................................... >200 mA
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.... –10°C to +85°C
Supply Voltage on VDD Relative to GND ....... –0.5V to +2.9V
Supply Voltage on VDDQ Relative to GND...... –0.5V to +VDD
DC Applied to Outputs in High-Z .........–0.5V to VDDQ + 0.3V
DC Input Voltage [11] ..............................–0.5V to VDD + 0.3V
Operating Range
Ambient
[15]
[15]
Range
Commercial
Industrial
Temperature (TA)
VDD
VDDQ
0°C to +70°C
1.8 ± 0.1V
1.4V to
VDD
–40°C to +85°C
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range [12]
Parameter
VDD
Description
Power Supply Voltage
IO Supply Voltage
Test Conditions
Min
1.7
Typ
Max
1.9
Unit
1.8
1.5
V
V
VDDQ
VOH
1.4
VDD
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Note 16
Note 17
VDDQ/2 – 0.12
VDDQ/2 – 0.12
VDDQ – 0.2
VSS
VDDQ/2 + 0.12
VDDQ/2 + 0.12
VDDQ
0.2
V
VOL
V
VOH(LOW)
VOL(LOW)
VIH
IOH = −0.1 mA, Nominal Impedance
V
IOL = 0.1 mA, Nominal Impedance
V
VREF + 0.1
–0.3
VDDQ + 0.3
VREF – 0.1
5
V
VIL
V
IX
Input Leakage Current
GND ≤ VI ≤ VDDQ
−5
μA
μA
V
IOZ
Output Leakage Current
Input Reference Voltage [18] Typical Value = 0.75V
GND ≤ VI ≤ VDDQ, Output Disabled
−5
5
VREF
IDD
0.68
0.75
0.95
VDD Operating Supply
VDD = Max,
OUT = 0 mA,
f = fMAX = 1/tCYC
(x8)
(x9)
1035
mA
I
1035
(x18)
(x36)
(x8)
1045
1055
ISB1
Automatic Power down
Current
Max VDD
,
410
mA
Both Ports Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC, Inputs Static
(x9)
410
(x18)
(x36)
415
415
AC Electrical Characteristics
Over the Operating Range [11]
Parameter
Description
Input HIGH Voltage
Input LOW Voltage
Test Conditions
Min
VREF + 0.2
–
Typ
–
Max
–
Unit
V
VIH
VIL
–
VREF – 0.2
V
Notes
15. Power up: assumes a linear ramp from 0V to V (min) within 200 ms. During this time V < V and V
< V
.
DD
IH
DD
DDQ
DD
16. Outputs are impedance controlled. I = –(V
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
OH
DDQ
17. Outputs are impedance controlled. I = (V
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
OL
DDQ
18. V
(min) = 0.68V or 0.46V
, whichever is larger, V
(max) = 0.95V or 0.54V
, whichever is smaller.
REF
DDQ
REF
DDQ
Document Number: 001-12559 Rev. *C
Page 20 of 26
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CY7C1518JV18, CY7C1520JV18
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
CIN
Description
Input Capacitance
Test Conditions
Max
5.5
8.5
6
Unit
pF
TA = 25°C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V
CCLK
Clock Input Capacitance
Output Capacitance
pF
CO
pF
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
165 FBGA
Package
Parameter
Description
Test Conditions
Unit
ΘJA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
16.2
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
2.3
°C/W
AC Test Loads and Waveforms
V
REF = 0.75V
0.75V
VREF
VREF
0.75V
R = 50Ω
OUTPUT
[19]
ALL INPUT PULSES
Z = 50Ω
0
OUTPUT
1.25V
Device
R = 50Ω
L
0.75V
Under
Device
Under
0.25V
Test
5 pF
VREF = 0.75V
Slew Rate = 2 V/ns
ZQ
Test
ZQ
RQ =
RQ =
250Ω
250Ω
INCLUDING
JIG AND
SCOPE
(a)
(b)
Notes
19. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, V
= 0.75V, RQ = 250Ω, V
= 1.5V, input pulse
DDQ
REF
levels of 0.25V to 1.25V, and output loading of the specified I /I and load capacitance shown in (a) of AC Test Loads and Waveforms.
OL OH
Document Number: 001-12559 Rev. *C
Page 21 of 26
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Switching Characteristics
Over the Operating Range [19]
300 MHz
Unit
Cypress Consortium
Parameter Parameter
Description
Min Max
tPOWER
tCYC
tKH
VDD(Typical) to the first Access [20]
1
–
ms
ns
ns
ns
ns
tKHKH
tKHKL
tKLKH
tKHKH
tKHCH
K Clock and C Clock Cycle Time
Input Clock (K/K and C/C) HIGH
Input Clock (K/K and C/C) LOW
3.3 8.4
1.32
1.32
1.49
–
–
–
tKL
tKHKH
tKHCH
Setup Times
K Clock Rise to K Clock Rise and C to C Rise (rising edge to rising edge)
K/K Clock Rise toC/C Clock Rise (rising edge to rising edge)
0.0 1.45 ns
tSA
tAVKH
Address Setup to K Clock Rise
0.4
0.4
0.3
0.3
–
–
–
–
ns
ns
ns
ns
tSC
tIVKH
tIVKH
tDVKH
Control Setup to Clock (K, K) Rise (LD, R/W)
Double Data Rate Control Setup to Clock (K, K) Rise (BWS0, BWS1, BWS2, BWS3)
D[X:0] Setup to Clock (K and K) Rise
tSCDDR
tSD
Hold Times
tHA
tKHAX
Address Hold after Clock (K and K) Rise
0.4
0.4
–
–
–
–
ns
ns
ns
ns
tHC
tKHIX
tKHIX
tKHDX
Control Hold after Clock (K and K) Rise (LD, R/W)
tHCDDR
tHD
Double Data Rate Control Hold after Clock (K and K) Rise (BWS0, BWS1, BWS2, BWS3) 0.3
D[X:0] Hold after Clock (K and K) Rise
0.3
Output Times
tCO
tCHQV
C/C Clock Rise (or K/K in single clock mode) to Data Valid
Data Output Hold after Output C/C Clock Rise (Active to Active)
C/C Clock Rise to Echo Clock Valid
–
0.45 ns
ns
0.45 ns
ns
0.27 ns
tDOH
tCHQX
–0.45
–
–
tCCQO
tCQOH
tCQD
tCHCQV
tCHCQX
tCQHQV
tCQHQX
tCQHCQL
Echo Clock Hold after C/C Clock Rise
–0.45
–
–
Echo Clock High to Data Valid
tCQDOH
tCQH
Echo Clock High to Data Invalid
Output Clock (CQ/CQ) HIGH [21]
–0.27
1.24
1.24
–
–
–
–
ns
ns
ns
[21]
tCQHCQH tCQHCQH
CQ Clock Rise to CQ Clock Rise
(rising edge to rising edge)
tCHZ
tCLZ
tCHQZ
Clock (C/C) Rise to High-Z (Active to High-Z) [22, 23]
Clock (C/C) Rise to Low-Z [22, 23]
0.45 ns
ns
tCHQX1
–0.45
–
DLL Timing
tKC Var tKC Var
tKC lock tKC lock
Clock Phase Jitter
–
0.20 ns
DLL Lock Time (K, C)
K Static to DLL Reset
1024
30
–
–
Cycles
ns
tKC Reset tKC Reset
Notes
20. This part has an internal voltage regulator; t
is the time that the power is supplied above V min initially before a read or write operation can be initiated.
DD
POWER
21. These parameters are extrapolated from the input timing parameters (t
- 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (t
) is already
KHKH
KC Var
included in the t
). These parameters are only guaranteed by design and are not tested in production.
KHKH
22. t
, t
are specified with a load capacitance of 5 pF as in (b) of AC Test Loads and Waveforms. Transition is measured ±100 mV from steady-state voltage.
CHZ CLZ
23. At any voltage and temperature t
is less than t
and t
less than t
.
CHZ
CLZ
CHZ
CO
Document Number: 001-12559 Rev. *C
Page 22 of 26
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CY7C1518JV18, CY7C1520JV18
Switching Waveforms
Figure 3. Read/Write/Deselect Sequence [24, 25, 26]
READ
2
READ
3
NOP
4
NOP
5
WRITE
6
WRITE
7
READ
8
NOP
1
9
10
K
t
t
t
t
KHKH
KH
KL
CYC
K
LD
t
t
SC
HC
R/W
A
A0
A2
A3
A4
A1
t
HD
t
t
t
HD
SA
HA
t
t
SD
SD
DQ
Q00 Q01 Q10 Q11
D21 D30
Q40 Q41
D20
D31
t
CQDOH
t
t
KHCH
CLZ
t
t
CHZ
DOH
t
CO
t
CQD
C
t
t
t
t
t
KHKH
KHCH
KH
KL
CYC
C#
t
CCQO
t
CQOH
CQ
CQ#
t
t
CQH
t
CQHCQH
CCQO
t
CQOH
DON’T CARE
UNDEFINED
Notes
24. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.
25. Outputs are disabled (High-Z) one clock cycle after a NOP.
26. In this example, if address A2 = A1, then data D20 = Q10 and D21 = Q11. Write data is forwarded immediately as read results. This note applies to the whole diagram.
Document Number: 001-12559 Rev. *C
Page 23 of 26
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CY7C1518JV18, CY7C1520JV18
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
Package
Diagram
Operating
Range
Ordering Code
Package Type
300 CY7C1516JV18-300BZC
CY7C1527JV18-300BZC
CY7C1518JV18-300BZC
CY7C1520JV18-300BZC
CY7C1516JV18-300BZXC
CY7C1527JV18-300BZXC
CY7C1518JV18-300BZXC
CY7C1520JV18-300BZXC
CY7C1516JV18-300BZI
CY7C1527JV18-300BZI
CY7C1518JV18-300BZI
CY7C1520JV18-300BZI
CY7C1516JV18-300BZXI
CY7C1527JV18-300BZXI
CY7C1518JV18-300BZXI
CY7C1520JV18-300BZXI
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
Commercial
Industrial
Document Number: 001-12559 Rev. *C
Page 24 of 26
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Package Diagram
Figure 4. 165-ball FBGA (15 x 17 x 1.40 mm), 51-85195
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Document Number: 001-12559 Rev. *C
Page 25 of 26
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CY7C1518JV18, CY7C1520JV18
Document History Page
Document Title: CY7C1516JV18/CY7C1527JV18/CY7C1518JV18/CY7C1520JV18, 72-Mbit DDR-II SRAM 2-Word
Burst Architecture
Document Number: 001-12559
ISSUE
DATE
ORIG. OF
CHANGE
REV. ECN NO.
DESCRIPTION OF CHANGE
**
808457 See ECN
1273883 See ECN
VKN
VKN
New Data Sheet
*A
Removed tSD footnote
Updated Logic block diagram for x18 and x36 parts
*B
*C
1462589 See ECN VKN/AESA Converted from preliminary to final
Updated IDD/ISB specs
Changed DLL minimum operating frequency from 80MHz to 120MHz
Changed tCYC max spec to 8.4ns
2189567 See ECN VKN/AESA Minor Change-Moved to the external web
© Cypress Semiconductor Corporation, 2007-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used
for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use
as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support
systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-12559 Rev. *C
Revised March 10, 2008
Page 26 of 26
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document
are the trademarks of their respective holders.
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