CY7C2665KV18-550BZXC [CYPRESS]
QDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, FBGA-165;
| 型号： | CY7C2665KV18-550BZXC |
| 厂家： | 
CYPRESS |
| 描述： | QDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, FBGA-165 时钟 静态存储器 内存集成电路 |
| 文件： | 总31页 (文件大小：556K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CY7C2663KV18/CY7C2665KV18
144-Mbit QDR® II+ SRAM Four-Word
Burst Architecture (2.5 Cycle Read Latency) with ODT
144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Features
Configurations
■ Separate independent read and write data ports
❐ Supports concurrent transactions
With Read Cycle Latency of 2.5 cycles:
CY7C2663KV18: 8M × 18
■ 550-MHz clock for high bandwidth
CY7C2665KV18: 4M × 36
■ Four-word burst for reducing address bus frequency
Functional Description
■ Double data rate (DDR) interfaces on both read and write ports
(data transferred at 1100 MHz) at 550 MHz
The CY7C2663KV18, and CY7C2665KV18 are 1.8 V
synchronous pipelined SRAMs, equipped with QDR II+
architecture. Similar to QDR II architecture, QDR II+ architecture
consists of two separate ports: the read port and the write port to
access the memory array. The read port has dedicated data
outputs to support read operations and the write port has
dedicated data inputs to support write operations. QDR II+
architecture has separate data inputs and data outputs to
completely eliminate the need to “turnaround” the data bus that
exists with common I/O devices. Each port is accessed through
a common address bus. Addresses for read and write addresses
are latched on alternate rising edges of the input (K) clock.
Accesses to the QDR II+ read and write ports are completely
independent of one another. To maximize data throughput, both
read and write ports are equipped with DDR interfaces. Each
address location is associated with four 18-bit words
(CY7C2663KV18), or 36-bit words (CY7C2665KV18) that burst
sequentially into or out of the device. Because data is transferred
into and out of the device on every rising edge of both input
clocks (K and K), memory bandwidth is maximized while
simplifying system design by eliminating bus “turn arounds”.
■ Available in 2.5-clock cycle latency
■ Two input clocks (K and K) for precise DDR timing
❐ Static random access memory (SRAM) uses rising edges
only
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Data valid pin (QVLD) to indicate valid data on the output
■ On-die termination (ODT) feature
❐ Supported for D[x:0], BWS[x:0], and K/K inputs
■ Single multiplexed address input bus latches address inputs
for read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ Quad data rate (QDR®) II+ operates with 2.5-cycle read latency
when DOFF is asserted high
■ OperatessimilartoQDRIdevicewith1cyclereadlatencywhen
DOFF is asserted low
These devices have an ODT feature supported for D[x:0]
,
BWS[x:0], and K/K inputs, which helps eliminate external
termination resistors, reduce cost, reduce board area, and
simplify board routing.
■ Available in × 18, and × 36 configurations
■ Full data coherency, providing most current data
[1]
■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD
❐ Supports both 1.5 V and 1.8 V I/O supply
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
■ High-speed transceiver logic (HSTL) inputs and variable drive
HSTL output buffers
■ Available in 165-ball fine-pitch ball grid array (FBGA) package
(15 ×17 ×1.4 mm)
For a complete list of related documentation, click here.
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Phase locked loop (PLL) for accurate data placement
Selection Guide
Description
Maximum operating frequency
Maximum operating current
550 MHz
550
1090
450 MHz Unit
450
940
MHz
mA
× 18
× 36
1520
1290
Note
1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V
= 1.4 V to V
.
DD
DDQ
Cypress Semiconductor Corporation
Document Number: 001-44141 Rev. *Q
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised November 24, 2017
CY7C2663KV18/CY7C2665KV18
Logic Block Diagram – CY7C2663KV18
18
D
[17:0]
Write Write Write Write
21
Address
Register
A
Reg
Reg
Reg
Reg
(20:0)
21
Address
Register
A
(20:0)
RPS
K
Control
Logic
CLK
Gen.
K
DOFF
Read Data Reg.
CQ
CQ
72
36
V
REF
18
18
18
18
Reg.
Reg.
Reg.
Control
Logic
WPS
BWS
18
36
Q
[17:0]
[1:0]
QVLD
Logic Block Diagram – CY7C2665KV18
36
D
[35:0]
Write Write Write Write
20
Address
Register
A
Reg
Reg
Reg
Reg
(19:0)
20
Address
Register
A
(19:0)
RPS
K
Control
Logic
CLK
Gen.
K
DOFF
Read Data Reg.
CQ
CQ
144
72
V
REF
36
36
36
36
Reg.
Reg.
Reg.
Control
Logic
WPS
BWS
36
72
Q
[35:0]
[3:0]
QVLD
Document Number: 001-44141 Rev. *Q
Page 2 of 31
CY7C2663KV18/CY7C2665KV18
Contents
Pin Configurations ...........................................................4
Pin Definitions ..................................................................5
Functional Overview ........................................................6
Read Operations .........................................................6
Write Operations .........................................................6
Byte Write Operations .................................................7
Concurrent Transactions .............................................7
Depth Expansion .........................................................7
Programmable Impedance ..........................................7
Echo Clocks ................................................................7
Valid Data Indicator (QVLD) ........................................7
On-Die Termination (ODT) ..........................................7
PLL ..............................................................................7
Application Example ........................................................8
Truth Table ........................................................................9
Write Cycle Descriptions ...............................................10
Write Cycle Descriptions ...............................................11
IEEE 1149.1 Serial Boundary Scan (JTAG) ..................12
Disabling the JTAG Feature ......................................12
Test Access Port .......................................................12
Performing a TAP Reset ...........................................12
TAP Registers ...........................................................12
TAP Instruction Set ...................................................12
TAP Controller State Diagram .......................................14
TAP Controller Block Diagram ......................................15
TAP Electrical Characteristics ......................................15
TAP AC Switching Characteristics ...............................16
TAP Timing and Test Conditions ..................................17
Identification Register Definitions ................................18
Scan Register Sizes .......................................................18
Instruction Codes ...........................................................18
Boundary Scan Order ....................................................19
Power-Up Sequence in QDR II+ SRAM .........................20
Power-Up Sequence .................................................20
PLL Constraints .........................................................20
Maximum Ratings ...........................................................21
Operating Range .............................................................21
Neutron Soft Error Immunity .........................................21
Electrical Characteristics ...............................................21
DC Electrical Characteristics .....................................21
AC Electrical Characteristics .....................................23
Capacitance ....................................................................23
Thermal Resistance ........................................................23
AC Test Loads and Waveforms .....................................23
Switching Characteristics ..............................................24
Switching Waveforms ....................................................25
Read/Write/Deselect Sequence ................................25
Ordering Information ......................................................26
Ordering Code Definitions .........................................26
Package Diagram ............................................................27
Acronyms ........................................................................28
Document Conventions .................................................28
Units of Measure .......................................................28
Document History Page .................................................29
Sales, Solutions, and Legal Information ......................31
Worldwide Sales and Design Support .......................31
Document Number: 001-44141 Rev. *Q
Page 3 of 31
CY7C2663KV18/CY7C2665KV18
Pin Configurations
The pin configurations for CY7C2663KV18, and CY7C2665KV18 follow. [2]
Figure 1. 165-ball FBGA (15 × 17 × 1.4 mm) pinout
CY7C2663KV18 (8M × 18)
1
CQ
NC
NC
NC
NC
NC
NC
DOFF
NC
NC
NC
NC
NC
NC
TDO
2
3
4
5
BWS1
NC
A
6
K
7
NC/288M
BWS0
A
8
9
A
10
A
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
A
B
C
D
E
F
A
A
WPS
A
RPS
A
Q9
D9
K
NC
NC
NC
NC
NC
NC
VDDQ
NC
NC
NC
NC
NC
NC
A
NC
Q7
NC
D6
NC
D10
Q10
Q11
D12
Q13
VDDQ
D14
Q14
D15
D16
Q16
Q17
A
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
NC
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
D11
NC
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
Q12
D13
VREF
NC
NC
NC
VREF
Q4
D3
G
H
J
K
L
NC
Q15
NC
NC
Q1
NC
D0
M
N
P
R
D17
NC
A
QVLD
ODT
A
TCK
A
A
A
A
TMS
CY7C2665KV18 (4M × 36)
1
2
NC/288M
Q18
Q28
D20
3
4
5
BWS2
BWS3
A
6
K
7
BWS1
BWS0
A
8
9
10
A
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
A
B
C
D
E
F
CQ
A
WPS
A
RPS
A
A
Q27
D27
D28
Q29
Q30
D30
DOFF
D31
Q32
Q33
D33
D34
Q35
TDO
D18
D19
Q19
Q20
D21
Q22
VDDQ
D23
Q23
D24
D25
Q25
Q26
A
K
D17
D16
Q16
Q15
D14
Q13
VDDQ
D12
Q12
D11
D10
Q10
Q9
Q17
Q7
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
NC
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
D15
D6
D29
Q21
D22
Q14
D13
VREF
Q4
G
H
J
VREF
Q31
D32
K
L
D3
Q24
Q34
D26
Q11
Q1
M
N
P
R
D9
D35
A
QVLD
ODT
A
D0
TCK
A
A
A
A
A
TMS
Note
2. NC/288M is not connected to the die and can be tied to any voltage level.
Document Number: 001-44141 Rev. *Q
Page 4 of 31
CY7C2663KV18/CY7C2665KV18
Pin Definitions
Pin Name
I/O
Pin Description
Data input signals. Sampled on the rising edge of K and K clocks when valid write operations are active.
D[x:0]
Input-
synchronous CY7C2663KV18 D[17:0]
CY7C2665KV18 D[35:0]
WPS
Input-
Write port select Active low. Sampled on the rising edge of the K clock. When asserted active, a
synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0]
.
BWS0,
BWS1,
BWS2,
BWS3
Input-
Byte write select (BWS) 0, 1, 2, and 3 Active low. Sampled on the rising edge of the K and K clocks
synchronous when write operations are active. Used to select which byte is written into the device during the current
portion of the write operations. Bytes not written remain unaltered.
CY7C2663KV18 BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C2665KV18 BWS0 controls D[8:0], BWS1 controls D[17:9]
,
BWS2 controls D[26:18] and BWS3 controls D[35:27].
All the BWs pins are sampled on the same edge as the data. Deselecting a BWS ignores the
corresponding byte of data and it is not written into the device
.
A
Input-
Address inputs. Sampled on the rising edge of the K clock during active read and write operations.
synchronous These address inputs are multiplexed for both read and write operations. Internally, the device is
organized as 8M × 18 (4 arrays each of 2M × 18) for CY7C2663KV18 and 4M × 36 (4 arrays each of
1M × 36) for CY7C2665KV18. Therefore, only 21 address inputs are needed to access the entire memory
array of CY7C2663KV18 and 20 address inputs for CY7C2665KV18. These inputs are ignored when
the appropriate port is deselected.
Q[x:0]
Outputs-
Data output signals. These pins drive out the requested data when the read operation is active. Valid
synchronous data is driven out on the rising edge of the K and K clocks during read operations. On deselecting the
read port, Q[x:0] are automatically tri-stated.
CY7C2663KV18 Q[17:0]
CY7C2665KV18 Q[35:0]
RPS
Input-
Read port select Active low. Sampled on the rising edge of positive input clock (K). When active, a
synchronous read operation is initiated. Deasserting deselects the read port. When deselected, the pending access
is allowed to complete and the output drivers are automatically tri-stated following the next rising edge
of the K clock. Each read access consists of a burst of four sequential transfers.
QVLD
Valid output Valid output indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ.
indicator
ODT [3]
ODT input pin ODT input. This pin is used for ODT of the input signals. ODT range selection is made during power-up
initialization. A low on this pin selects a low range that follows RQ/3.33 for 175 < RQ < 350 (where
RQ is the resistor tied to ZQ pin)A HIGH on this pin selects a high range that follows RQ/1.66 for
175 < RQ < 250 (where RQ is the resistor tied to ZQ pin). When left floating, a high range termination
value is selected by default.
K
Input clock Positive input clock input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q[x:0]. All accesses are initiated on the rising edge of K.
K
Input clock Negative input clock input. K is used to capture synchronous inputs being presented to the device and
to drive out data through Q[x:0]
.
CQ
CQ
ZQ
Echo clock Synchronous echo clock outputs. This is a free running clock and is synchronized to the input clock
(K) of the QDR II+. The timings for the echo clocks are shown in the Switching Characteristics on page 24.
Echo clock Synchronous echo clock outputs. This is a free running clock and is synchronized to the input clock
(K) of the QDR II+.The timings for the echo clocks are shown in the Switching Characteristics on page 24.
Input
Output impedance matching input. This input is used to tune the device outputs to the system data
bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 × RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which
enables the minimum impedance mode. This pin cannot be connected directly to GND or left
unconnected.
Note
3. On-Die Termination (ODT) feature is supported for D
, BWS
, and K/K inputs.
[x:0]
[x:0]
Document Number: 001-44141 Rev. *Q
Page 5 of 31
CY7C2663KV18/CY7C2665KV18
Pin Definitions
Pin Name
I/O
Pin Description
DOFF
Input
PLL turn-off Active low. Connecting this pin to ground turns off the PLL inside the device. The timings
in the PLL turned off operation differs from those listed in this datasheet. For normal operation, this pin
can be connected to a pull-up through a 10 k or less pull-up resistor. The device behaves in QDR I
mode when the PLL is turned off. In this mode, the device can be operated at a frequency of up to
167 MHz with QDR I timing.
TDO
TCK
Output
Input
Input
Input
N/A
Test data out (TDO) pin for JTAG.
Test clock (TCK) pin for JTAG.
TDI
Test data in (TDI) pin for JTAG.
TMS
NC
Test mode select (TMS) pin for JTAG.
Not connected to the die. Can be tied to any voltage level.
Not connected to the die. Can be tied to any voltage level.
Reference voltage input. Static input used to set the reference level for HSTL inputs, outputs, and AC
NC/288M
VREF
N/A
Input-
reference measurement points.
VDD
VSS
Power supply Power supply inputs to the core of the device.
Ground
Ground for the device.
VDDQ
Power supply Power supply inputs for the outputs of the device.
RPS active at the rising edge of the positive input clock (K). The
address presented to the address inputs is stored in the read
address register. Following the next two K clock rise, the
corresponding lowest order 18-bit word of data is driven onto the
Q[17:0] using K as the output timing reference. On the
subsequent rising edge of K, the next 18-bit data word is driven
onto the Q[17:0]. This process continues until all four 18-bit data
words have been driven out onto Q[17:0]. The requested data is
valid 0.45 ns from the rising edge of the input clock (K or K). To
maintain the internal logic, each read access must be allowed to
complete. Each read access consists of four 18-bit data words
and takes two clock cycles to complete. Therefore, read
accesses to the device can not be initiated on two consecutive
K clock rises. The internal logic of the device ignores the second
read request. Read accesses can be initiated on every other K
clock rise. Doing so pipelines the data flow such that data is
transferred out of the device on every rising edge of the input
clocks (K and K).
Functional Overview
The CY7C2663KV18, CY7C2665KV18 are synchronous
pipelined burst SRAMs equipped with a read port and a write
port. The read port is dedicated to read operations and the write
port is dedicated to write operations. Data flows into the SRAM
through the write port and flows out through the read port. These
devices multiplex the address inputs to minimize the number of
address pins required. By having separate read and write ports,
the QDR II+ eliminates the need to “turnaround” the data bus and
avoids any possible data contention, thereby simplifying system
design. Each access consists of four 18-bit data transfers in the
case of CY7C2663KV18, and four 36-bit data transfers in the
case of CY7C2665KV18, in two clock cycles.
These devices operate with a read latency of two and half cycles
when DOFF pin is tied high. When DOFF pin is set low or
connected to VSS then device behaves in QDR I mode with a
read latency of one clock cycle.
When the read port is deselected, the CY7C2663KV18 first
completes the pending read transactions. Synchronous internal
circuitry automatically tri-states the outputs following the next
rising edge of the negative input clock (K). This enables for a
seamless transition between devices without the insertion of wait
states in a depth expanded memory.
Accesses for both ports are initiated on the positive input clock
(K). All synchronous input and output timing are referenced from
the rising edge of the input clocks (K and K).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the input clocks (K and K). All synchronous data
outputs (Q[x:0]) outputs pass through output registers controlled
by the rising edge of the input clocks (K and K) as well.
Write Operations
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass
through input registers controlled by the rising edge of the input
clocks (K and K).
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the following K
clock rise the data presented to D[17:0] is latched and stored into
the lower 18-bit write data register, provided BWS[1:0] are both
asserted active. On the subsequent rising edge of the negative
input clock (K) the information presented to D[17:0] is also stored
into the write data register, provided BWS[1:0] are both asserted
active. This process continues for one more cycle until four 18-bit
words (a total of 72 bits) of data are stored in the SRAM. The
72 bits of data are then written into the memory array at the
specified location. Therefore, write accesses to the device can
CY7C2663KV18 is described in the following sections. The
same basic descriptions apply to CY7C2665KV18.
Read Operations
The CY7C2663KV18 is organized internally as four arrays of
2M × 18. Accesses are completed in a burst of four sequential
18-bit data words. Read operations are initiated by asserting
Document Number: 001-44141 Rev. *Q
Page 6 of 31
CY7C2663KV18/CY7C2665KV18
not be initiated on two consecutive K clock rises. The internal
logic of the device ignores the second write request. Write
accesses can be initiated on every other rising edge of the
positive input clock (K). Doing so pipelines the data flow such
that 18 bits of data can be transferred into the device on every
rising edge of the input clocks (K and K).
driver impedance. The value of RQ must be 5 × the value of the
intended line impedance driven by the SRAM, the allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175 and 350 , with VDDQ = 1.5 V. The
output impedance is adjusted every 1024 cycles upon power-up
to account for drifts in supply voltage and temperature.
When deselected, the write port ignores all inputs after the
pending write operations have been completed.
Echo Clocks
Echo clocks are provided on the QDR II+ to simplify data capture
on high-speed systems. Two echo clocks are generated by the
QDR II+. CQ is referenced with respect to K and CQ is
referenced with respect to K. These are free-running clocks and
are synchronized to the input clock of the QDR II+. The timing
for the echo clocks is shown in the Switching Characteristics on
page 24.
Byte Write Operations
Byte write operations are supported by the CY7C2663KV18. A
write operation is initiated as described in the section Write
Operations on page 6. The bytes that are written are determined
by BWS0 and BWS1, which are sampled with each set of 18-bit
data words. Asserting the appropriate BWS input during the data
portion of a write latches the data being presented and writes it
into the device. Deasserting the BWS input during the data
portion of a write enables the data stored in the device for that
byte to remain unaltered. This feature can be used to simplify
read, modify, or write operations to a byte write operation.
Valid Data Indicator (QVLD)
QVLD is provided on the QDR II+ to simplify data capture on
high-speed systems. The QVLD is generated by the QDR II+
device along with data output. This signal is also edge-aligned
with the echo clock and follows the timing of any data pin. This
signal is asserted half a cycle before valid data arrives.
Concurrent Transactions
The read and write ports on the CY7C2663KV18 operate
completely independently of one another. As each port latches
the address inputs on different clock edges, the user can read or
write to any location, regardless of the transaction on the other
port. If the ports access the same location when a read follows a
write in successive clock cycles, the SRAM delivers the most
recent information associated with the specified address
location. This includes forwarding data from a write cycle that
was initiated on the previous K clock rise.
On-Die Termination (ODT)
These devices have an ODT feature for data inputs (D[x:0]), byte
write selects (BWS[x:0]), and input clocks (K and K). The
termination resistors are integrated within the chip. The ODT
range selection is enabled through ball R6 (ODT pin). The ODT
termination tracks value of RQ where RQ is the resistor tied to
the ZQ pin. ODT range selection is made during power-up
initialization. A low on this pin selects a low range that follows
RQ/3.33 for 175 < RQ < 350 (where RQ is the resistor tied
to ZQ pin)A HIGH on this pin selects a high range that follows
RQ/1.66 for 175 < RQ < 250 (where RQ is the resistor tied
to ZQ pin). When left floating, a high range termination value is
selected by default. For a detailed description of ODT
implementation, refer to the application note, AN42468, On-Die
Termination for QDRII+/DDRII+ SRAMs.
Read access and write access must be scheduled such that one
transaction is initiated on any clock cycle. If both ports are
selected on the same K clock rise, the arbitration depends on the
previous state of the SRAM. If both ports are deselected, the
read port takes priority. If a read was initiated on the previous
cycle, the write port takes priority (as read operations can not be
initiated on consecutive cycles). If a write was initiated on the
previous cycle, the read port takes priority (as write operations
can not be initiated on consecutive cycles). Therefore, asserting
both port selects active from a deselected state results in alter-
nating read or write operations being initiated, with the first
access being a read.
PLL
These chips use a PLL that is designed to function between
120 MHz and the specified maximum clock frequency. During
power-up, when the DOFF is tied high, the PLL is locked after
20 s of stable clock. The PLL can also be reset by slowing or
stopping the input clocks K and K for a minimum of 30 ns.
However, it is not necessary to reset the PLL to lock to the
desired frequency. The PLL automatically locks 20 s after a
stable clock is presented. The PLL may be disabled by applying
ground to the DOFF pin. When the PLL is turned off, the device
behaves in QDR I mode (with one cycle latency and a longer
access time).
Depth Expansion
The CY7C2663KV18 has a port select input for each port. This
enables for easy depth expansion. Both port selects are sampled
on the rising edge of the positive input clock only (K). Each port
select input can deselect the specified port. Deselecting a port
does not affect the other port. All pending transactions (read and
write) are completed before the device is deselected.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to allow the SRAM to adjust its output
Document Number: 001-44141 Rev. *Q
Page 7 of 31
CY7C2663KV18/CY7C2665KV18
Application Example
Figure 2 shows two QDR II+ used in an application.
Figure 2. Application Example (Width Expansion)
ZQ
CQ/CQ
Q[x:0]
ZQ
CQ/CQ
Q[x:0]
SRAM#1
D[x:0]
SRAM#2
RQ
RQ
D[x:0]
A
RPS WPS BWS
K
K
A
RPS WPS BWS
K
K
DATA IN[2x:0]
DATA OUT [2x:0]
ADDRESS
RPS
WPS
BWS
CLKIN1/CLKIN1
CLKIN2/CLKIN2
SOURCE K
SOURCE K
FPGA / ASIC
Document Number: 001-44141 Rev. *Q
Page 8 of 31
CY7C2663KV18/CY7C2665KV18
Truth Table
The truth table for CY7C2663KV18, and CY7C2665KV18 follows. [4, 5, 6, 7, 8, 9]
Operation
Write cycle:
K
RPS WPS
DQ
DQ
DQ
DQ
L–H H [10] L [11] D(A) at K(t + 1) D(A + 1) at K(t + 1) D(A + 2) at K(t + 2) D(A + 3) at K(t + 2)
Load address on the rising
edge of K; input write data
on two consecutive K and
K rising edges.
Read cycle:
L–H
L [11]
X
Q(A) at K(t + 2) Q(A + 1) at K(t + 3) Q(A + 2) at K(t + 3) Q(A + 3) at K(t + 4)
(2.5 cycle Latency)
Load address on the rising
edge of K; wait two and
half cycles; read data on
two consecutive K and K
rising edges.
NOP: No operation
L–H
H
X
H
X
D = X
Q = High Z
D = X
Q = High Z
D = X
Q = High Z
D = X
Q = High Z
Standby: Clock stopped
Stopped
Previous state
Previous state
Previous state
Previous state
Notes
4. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
5. Device powers up deselected with the outputs in a tri-state condition.
6. “A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A + 3 represents the address sequence in the burst.
7. “t” represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the “t” clock cycle.
8. Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges as well.
9. It is recommended that K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.
10. If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.
11. This signal was high on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the
second read or write request.
Document Number: 001-44141 Rev. *Q
Page 9 of 31
CY7C2663KV18/CY7C2665KV18
Write Cycle Descriptions
The write cycle description table for CY7C2663KV18 follows. [12, 13]
BWS0/ BWS1/
K
Comments
K
L
L
L–H
–
During the data portion of a write sequence
CY7C2663KV18 both bytes (D[17:0]) are written into the device.
L
L
–
L–H
–
L–H During the data portion of a write sequence:
CY7C2663KV18 both bytes (D[17:0]) are written into the device.
L
H
H
L
–
During the data portion of a write sequence:
CY7C2663KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L
L–H During the data portion of a write sequence
CY7C2663KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
H
H
L–H
–
–
During the data portion of a write sequence:
CY7C2663KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
L
L–H During the data portion of a write sequence:
CY7C2663KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
H
H
H
H
L–H
–
–
No data is written into the devices during this portion of a write operation.
L–H No data is written into the devices during this portion of a write operation.
Notes
12. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
13. Is based on a write cycle that was initiated in accordance with the Truth Table on page 9. BWS , BWS , BWS , and BWS can be altered on different portions of a
0
1
2
3
write cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-44141 Rev. *Q
Page 10 of 31
CY7C2663KV18/CY7C2665KV18
Write Cycle Descriptions
The write cycle description table for CY7C2665KV18 follows. [14, 15]
BWS0 BWS1 BWS2 BWS3
K
K
Comments
L
L
L
L
L–H
–
During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
L
L
L
–
L–H
–
L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
H
H
L
H
H
H
H
L
H
H
H
H
H
H
L
–
During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L
L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
H
H
H
H
H
H
L–H
–
–
During the data portion of a write sequence, only the byte (D[17:9]) is written into the
device. D[8:0] and D[35:18] remains unaltered.
L
L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into the
device. D[8:0] and D[35:18] remains unaltered.
H
H
H
H
L–H
–
–
During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
L
L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
H
H
L–H
–
–
During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
L
L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
H
H
H
H
H
H
H
H
L–H
–
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Notes
14. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
15. Is based on a write cycle that was initiated in accordance with the Truth Table on page 9. BWS , BWS , BWS , and BWS can be altered on different portions of a write
0
1
2
3
cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-44141 Rev. *Q
Page 11 of 31
CY7C2663KV18/CY7C2665KV18
Instruction Register
IEEE 1149.1 Serial Boundary Scan (JTAG)
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in TAP Controller Block Diagram on
page 15. Upon power-up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.
These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8 V I/O logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied low
(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may
alternatively be connected to VDD through a pull-up resistor. TDO
must be left unconnected. Upon power-up, the device comes up
in a reset state, which does not interfere with the operation of the
device.
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set low (VSS) when the
BYPASS instruction is executed.
Test Access Port
Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up
internally, resulting in a logic HIGH level.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see the TAP Controller State
Diagram on page 14. TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
The Boundary Scan Order on page 19 shows the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 18.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see Instruction Codes on page 18).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
TAP Instruction Set
Performing a TAP Reset
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction
Codes on page 18. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in this section in detail.
A Reset is performed by forcing TMS high (VDD) for five rising
edges of TCK. This Reset does not affect the operation of the
SRAM and can be performed while the SRAM is operating. At
power-up, the TAP is reset internally to ensure that TDO comes
up in a High Z state.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
TAP Registers
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Document Number: 001-44141 Rev. *Q
Page 12 of 31
CY7C2663KV18/CY7C2665KV18
IDCODE
PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.
The IDCODE instruction loads a vendor-specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
power-up or whenever the TAP controller is supplied a
Test-Logic-Reset state.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
SAMPLE Z
The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a High Z state until the next command is supplied during the
Update IR state.
EXTEST
The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.
EXTEST OUTPUT BUS TRI-STATE
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tri-state mode.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output undergoes a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This does not harm the device, but
there is no guarantee as to the value that is captured.
Repeatable results may not be possible.
The boundary scan register has a special bit located at bit #108.
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When high, it enables the output buffers to drive the
output bus. When low, this bit places the output bus into a High Z
condition.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus hold
times (tCS and tCH). The SRAM clock input might not be captured
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that cell,
during the Shift-DR state. During Update-DR, the value loaded
into that shift-register cell latches into the preload register. When
the EXTEST instruction is entered, this bit directly controls the
output Q-bus pins. Note that this bit is preset high to enable the
output when the device is powered up, and also when the TAP
controller is in the Test-Logic-Reset state.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Document Number: 001-44141 Rev. *Q
Page 13 of 31
CY7C2663KV18/CY7C2665KV18
TAP Controller State Diagram
The state diagram for the TAP controller follows. [16]
TEST-LOGIC
1
RESET
0
1
1
1
SELECT
TEST-LOGIC/
SELECT
0
IR-SCAN
IDLE
DR-SCAN
0
0
1
1
CAPTURE-DR
0
CAPTURE-IR
0
0
1
0
1
SHIFT-DR
1
SHIFT-IR
1
EXIT1-DR
0
EXIT1-IR
0
0
0
PAUSE-DR
1
PAUSE-IR
1
0
0
EXIT2-DR
1
EXIT2-IR
1
UPDATE-IR
0
UPDATE-DR
1
1
0
Note
16. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document Number: 001-44141 Rev. *Q
Page 14 of 31
CY7C2663KV18/CY7C2665KV18
TAP Controller Block Diagram
0
Bypass Register
2
1
1
1
0
0
0
Selection
TDI
Selection
Circuitry
TDO
Instruction Register
Circuitry
31 30
29
.
.
2
Identification Register
.
108
.
.
.
2
Boundary Scan Register
TCK
TMS
TAP Controller
TAP Electrical Characteristics
Over the Operating Range
Parameter [17, 18, 19]
Description
Output high voltage
Test Conditions
IOH =2.0 mA
Min
1.4
1.6
–
Max
–
Unit
V
VOH1
VOH2
VOL1
VOL2
VIH
Output high voltage
Output low voltage
Output low voltage
Input high voltage
Input low voltage
IOH =100 A
IOL = 2.0 mA
IOL = 100 A
–
–
V
0.4
0.2
V
–
V
0.65 × VDD VDD + 0.3
V
VIL
–
–0.3
–5
0.35 × VDD
5
V
IX
Input and output load current
GND VI VDD
A
Notes
17. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics on page 21.
18. Overshoot: V < V + 0.35 V (Pulse width less than t /2), Undershoot: V /2).
> 0.3 V (Pulse width less than t
IH(AC)
DD
CYC
IL(AC)
CYC
19. All voltage referenced to ground.
Document Number: 001-44141 Rev. *Q
Page 15 of 31
CY7C2663KV18/CY7C2665KV18
TAP AC Switching Characteristics
Over the Operating Range
Parameter [20, 21]
Description
Min
50
–
Max
–
Unit
ns
tTCYC
TCK clock cycle time
TCK clock frequency
TCK clock high
tTF
20
–
MHz
ns
tTH
20
20
tTL
TCK clock low
–
ns
Setup Times
tTMSS
tTDIS
TMS setup to TCK clock rise
TDI setup to TCK clock rise
Capture setup to TCK rise
5
5
5
–
–
–
ns
ns
ns
tCS
Hold Times
tTMSH
tTDIH
TMS hold after TCK clock rise
TDI hold after clock rise
5
5
5
–
–
–
ns
ns
ns
tCH
Capture hold after clock rise
Output Times
tTDOV
tTDOX
TCK clock low to TDO valid
TCK clock low to TDO invalid
–
0
10
–
ns
ns
Notes
20. t and t refer to the setup and hold time requirements of latching data from the boundary scan register.
CS
CH
21. Test conditions are specified using the load in TAP AC Test Conditions. t /t = 1 ns.
R
F
Document Number: 001-44141 Rev. *Q
Page 16 of 31
CY7C2663KV18/CY7C2665KV18
TAP Timing and Test Conditions
Figure 3 shows the TAP timing and test conditions. [22]
Figure 3. TAP Timing and Test Conditions
0.9 V
ALL INPUT PULSES
1.8 V
0.9 V
50
TDO
0 V
Z = 50
0
C = 20 pF
L
tTL
tTH
GND
(a)
Test Clock
TCK
tTCYC
tTMSH
tTMSS
Test Mode Select
TMS
tTDIS
tTDIH
Test Data In
TDI
Test Data Out
TDO
tTDOV
tTDOX
Note
22. Test conditions are specified using the load in TAP AC Test Conditions. t /t = 1 ns.
R
F
Document Number: 001-44141 Rev. *Q
Page 17 of 31
CY7C2663KV18/CY7C2665KV18
Identification Register Definitions
Value
Instruction Field
Description
CY7C2663KV18
000
CY7C2665KV18
000
11010010001100011 Defines the type of SRAM.
Revision number (31:29)
Cypress device ID (28:12)
Cypress JEDEC ID (11:1)
Version number.
11010010001010011
00000110100
00000110100
Allows unique identification of SRAM
vendor.
ID register presence (0)
1
1
Indicates the presence of an ID register.
Scan Register Sizes
Register Name
Bit Size
Instruction
Bypass
3
1
ID
32
109
Boundary scan
Instruction Codes
Instruction
EXTEST
Code
000
Description
Captures the input and output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the input and output contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a High Z state.
RESERVED
011
100
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
Captures the input and output ring contents. Places the boundary scan register between TDI
and TDO. Does not affect the SRAM operation.
RESERVED
RESERVED
BYPASS
101
110
111
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
Document Number: 001-44141 Rev. *Q
Page 18 of 31
CY7C2663KV18/CY7C2665KV18
Boundary Scan Order
Bit #
0
Bump ID
6R
Bit #
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
Bump ID
10G
9G
Bit #
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
Bump ID
6A
Bit #
84
Bump ID
1J
1
6P
5B
5A
85
2J
2
6N
11F
11G
9F
86
3K
3
7P
4A
87
3J
4
7N
5C
4B
88
2K
5
7R
10F
11E
10E
10D
9E
89
1K
6
8R
3A
90
2L
7
8P
2A
91
3L
8
9R
1A
92
1M
1L
9
11P
10P
10N
9P
2B
93
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
10C
11D
9C
3B
94
3N
1C
1B
95
3M
1N
96
10M
11N
9M
9D
3D
3C
1D
2C
3E
97
2M
3P
11B
11C
9B
98
99
2N
9N
100
101
102
103
104
105
106
107
108
2P
11L
11M
9L
10B
11A
10A
9A
1P
2D
2E
3R
4R
10L
11K
10K
9J
1E
4P
8B
2F
5P
7C
3F
5N
6C
1G
1F
5R
9K
8A
Internal
10J
11J
11H
7A
3G
2G
1H
7B
6B
Document Number: 001-44141 Rev. *Q
Page 19 of 31
CY7C2663KV18/CY7C2665KV18
PLL Constraints
Power-Up Sequence in QDR II+ SRAM
■ PLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as tKC Var
QDR II+ SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
.
■ The PLL functions at frequencies down to 120 MHz.
Power-Up Sequence
■ If the input clock is unstable and the PLL is enabled, then the
PLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide 20 s of stable clock to
relock to the desired clock frequency.
■ Apply power and drive DOFF either high or low (All other inputs
can be high or low).
❐ Apply VDD before VDDQ
.
❐ Apply VDDQ before VREF or at the same time as VREF
.
❐ Drive DOFF high.
■ Provide stable DOFF (high), power and clock (K, K) for 20 s
to lock the PLL
Figure 4. Power-Up Waveforms
K
K
Unstable Clock
> 20μs Stable clock
Stable)
DDQ
Start Normal
Operation
/
V
Clock Start (Clock Starts after V
DD
Stable (< +/- 0.1V DC per 50ns )
/
/
V
VDDQ
V
VDD
DD
DDQ
Fix HIGH (or tie to V
)
DDQ
DOFF
Document Number: 001-44141 Rev. *Q
Page 20 of 31
CY7C2663KV18/CY7C2665KV18
Maximum Ratings
Operating Range
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Ambient
Temperature (TA)
[24]
[24]
Range
VDD
VDDQ
Storage temperature ................................ –65 °C to +150 °C
Commercial
Industrial
0 °C to +70 °C
1.8 ± 0.1 V 1.4 V to
VDD
Ambient temperature
with power applied ................................... –55 °C to +125 °C
–40 °C to +85 °C
Supply voltage on VDD relative to GND .......–0.5 V to +2.9 V
Supply voltage on VDDQ relative to GND ...... –0.5 V to +VDD
DC applied to outputs in high Z ........–0.5 V to VDDQ + 0.3 V
DC input voltage [23] ...........................–0.5 V to VDD + 0.3 V
Current into outputs (low) ........................................... 20 mA
Neutron Soft Error Immunity
Test
Parameter Description
Conditions
Typ Max* Unit
LSBU
LMBU
SEL
Logical
single-bit
upsets
25 °C
25 °C
85 °C
197 216
FIT/
Mb
Static discharge voltage
(MIL-STD-883, M. 3015) .........................................> 2001 V
Latch up current .....................................................> 200 mA
Logical
multi-bit
upsets
0
0
0.01 FIT/
Mb
Single-event
latch up
0.1
FIT/
Dev
* No LMBU or SEL events occurred during testing; this column represents a
2
statistical , 95% confidence limit calculation. For more details refer to Application
Note AN54908 “Accelerated Neutron SER Testing and Calculation of Terrestrial
Failure Rates”.
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Over the Operating Range
Parameter [25]
VDD
Description
Power supply voltage
I/O supply voltage
Output high voltage
Output low voltage
Output high voltage
Output low voltage
Input high voltage
Input low voltage
Test Conditions
Min
1.7
Typ
1.8
1.5
Max
Unit
V
1.9
VDD
VDDQ
VOH
1.4
V
Note 26
Note 27
VDDQ/2 – 0.12
VDDQ/2 – 0.12
VDDQ – 0.2
VSS
VDDQ/2 + 0.12
VDDQ/2 + 0.12
VDDQ
V
VOL
–
–
V
VOH(LOW)
VOL(LOW)
VIH
IOH =0.1 mA, Nominal Impedance
V
IOL = 0.1 mA, Nominal Impedance
–
0.2
V
VREF + 0.1
–0.15
–
VDDQ + 0.15
VREF – 0.1
2
V
VIL
–
V
IX
Input leakage current
GND VI VDDQ
2
–
A
A
V
IOZ
Output leakage current
Input reference voltage [28] Typical Value = 0.75 V
GND VI VDDQ, Output Disabled
2
–
2
VREF
0.68
0.75
0.95
Notes
23. Overshoot: V
24. Power-up: Assumes a linear ramp from 0 V to V
< V
+ 0.35 V (Pulse width less than t
/2), Undershoot: V
> 0.3 V (Pulse width less than t
/2).
IH(AC)
DDQ
CYC
IL(AC)
CYC
within 200 ms. During this time V < V and V
< V
.
DD(min)
IH
DD
DDQ
DD
25. All voltage referenced to ground.
26. Output are impedance controlled. I = (V
/2)/(RQ/5) for values of 175 RQ 350 .
DDQ
DDQ
OH
27. Output are impedance controlled. I = (V
/2)/(RQ/5) for values of 175 RQ 350 .
OL
28. V
= 0.68 V or 0.46 V
, whichever is larger, V
= 0.95 V or 0.54 V
, whichever is smaller.
REF(min)
DDQ
REF(max)
DDQ
Document Number: 001-44141 Rev. *Q
Page 21 of 31
CY7C2663KV18/CY7C2665KV18
Electrical Characteristics (continued)
Over the Operating Range
DC Electrical Characteristics (continued)
Over the Operating Range
Parameter [25]
Description
Test Conditions
Min
–
Typ
–
Max
1090
1520
940
Unit
[29]
IDD
VDD operating supply
VDD = Max, IOUT = 0 mA, 550 MHz (× 18)
f = fMAX = 1/tCYC
mA
(× 36)
–
–
450 MHz (× 18)
(× 36)
–
–
mA
mA
mA
–
–
1290
500
ISB1
Automatic power-down
current
Max VDD
,
550 MHz (× 18)
(× 36)
–
–
Both Ports Deselected,
–
–
500
VIN VIH or VIN VIL,
f = fMAX = 1/tCYC
Inputs Static
,
450 MHz (× 18)
(× 36)
–
–
460
–
–
460
Note
29. The operation current is calculated with 50% read cycle and 50% write cycle.
Document Number: 001-44141 Rev. *Q
Page 22 of 31
CY7C2663KV18/CY7C2665KV18
AC Electrical Characteristics
Over the Operating Range
Parameter [30]
Description
Test Conditions
Min
VREF + 0.2
–0.24
Typ
–
Max
Unit
V
VIH
VIL
Input high voltage
Input low voltage
VDDQ + 0.24
VREF – 0.2
–
V
Capacitance
Parameter [31]
Description
Test Conditions
Max
4
Unit
pF
CIN
CO
Input capacitance
Output capacitance
TA = 25 C, f = 1 MHz, VDD = 1.8 V, VDDQ = 1.5 V
4
pF
Thermal Resistance
165-ballFBGA
Package
Parameter [31]
Description
Test Conditions
Unit
JA (0 m/s)
JA (1 m/s)
JA (3 m/s)
Thermal resistance
(junction to ambient)
Socketed on a 170 × 220 × 2.35 mm, eight-layer printed
circuit board
12.23
11.17
10.42
9.34
°C/W
°C/W
°C/W
°C/W
JB
Thermal resistance
(junction to board)
JC
Thermal resistance
(junction to case)
2.10
°C/W
AC Test Loads and Waveforms
Figure 5. AC Test Loads and Waveforms
VREF = 0.75 V
0.75 V
VREF
VREF
0.75 V
R = 50
OUTPUT
[32]
ALL INPUT PULSES
1.25 V
Z = 50
0
OUTPUT
Device
R = 50
L
0.75 V
Under
Device
Under
0.25 V
Test
5 pF
VREF = 0.75 V
Slew Rate = 2 V/ns
ZQ
Test
ZQ
RQ =
RQ =
250
(b)
250
INCLUDING
JIG AND
SCOPE
(a)
Notes
30. Overshoot: V
< V
+ 0.35 V (Pulse width less than t
/2), Undershoot: V
> 0.3 V (Pulse width less than t
/2).
IH(AC)
DDQ
CYC
IL(AC)
CYC
31. Tested initially and after any design or process change that may affect these parameters.
32. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , V
= 1.5 V, input
DDQ
pulse levels of 0.25 V to 1.25 V, and output loading of the specified I /I and load capacitance shown in (a) of Figure 5.
OL OH
Document Number: 001-44141 Rev. *Q
Page 23 of 31
CY7C2663KV18/CY7C2665KV18
Switching Characteristics
Over the Operating Range
Parameters [33, 34]
550 MHz
Min Max
450 MHz
Min Max
Description
VDD(typical) to the first access [35]
Unit
Cypress Consortium
Parameter Parameter
tPOWER
tCYC
tKH
1
–
1
–
ms
ns
tKHKH
tKHKL
tKLKH
tKHKH
K clock cycle time
1.81
0.4
8.4
–
2.2
0.4
8.4
–
tCYC
tCYC
ns
Input clock (K/K) high
Input clock (K/K) low
tKL
0.4
–
0.4
–
tKHKH
0.77
–
0.94
–
K clock rise to K clock rise (rising edge to rising edge)
Setup Times
tSA
tAVKH
Address setup to K clock rise
0.23
0.23
–
–
–
–
0.275
0.275
0.22
–
–
–
–
ns
ns
ns
ns
tSC
tIVKH
tIVKH
tDVKH
Control setup to K clock rise (RPS, WPS)
tSCDDR
tSD
DDR control setup to clock (K/K) Rise (BWS0, BWS1, BWS2, BWS3) 0.18
0.18
0.22
D[X:0] setup to clock (K/K) rise
Hold Times
tHA
tKHAX
tKHIX
tKHIX
tKHDX
0.23
0.23
–
–
–
–
0.275
0.275
0.22
–
–
–
–
ns
ns
ns
ns
Address hold after K clock rise
tHC
Control hold after K clock rise (RPS, WPS)
tHCDDR
tHD
DDR control hold after clock (K/K) rise (BWS0, BWS1, BWS2, BWS3) 0.18
0.18
0.22
D[X:0] hold after clock (K/K) rise
Output Times
tCO
tCHQV
–
0.45
–
–
0.45
–
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
K/K clock rise to data valid
tDOH
tCHQX
–0.45
–
–0.45
–
Data output hold after output K/K clock rise (active to active)
K/K clock rise to echo clock valid
Echo clock hold after K/K clock rise
Echo clock high to data valid
tCCQO
tCQOH
tCQD
tCHCQV
tCHCQX
tCQHQV
tCQHQX
tCQHCQL
tCQHCQH
tCHQZ
0.45
–
0.45
–
–0.45
–
–0.45
–
0.15
–
0.15
–
tCQDOH
tCQH
tCQHCQH
tCHZ
Echo clock high to data invalid
Output clock (CQ/CQ) high [36]
–0.15
0.655
0.655
–
–0.15
0.85
0.85
–
–
–
[36]
CQ clock rise to CQ clock rise
–
–
(rising edge to rising edge)
Clock (K/K) rise to high Z (active to high Z) [37, 38]
Clock (K/K) rise to low Z [37, 38]
Echo clock high to QVLD valid [39]
0.45
–
0.45
–
tCLZ
tCHQX1
tCQHQVLD
–0.45
–0.45
tQVLD
–0.15 0.15 –0.15 0.15
PLL Timing
tKC Var
tKC lock
tKC Reset
tKC Var
Clock phase jitter
–
0.15
–
–
0.15
–
ns
s
ns
tKC lock
tKC Reset
PLL lock time (K)
K static to PLL reset [40]
20
30
20
30
–
–
Notes
33. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , V
= 1.5 V, input
DDQ
pulse levels of 0.25 V to 1.25 V, and output loading of the specified I /I and load capacitance shown in (a) of Figure 5 on page 23.
OL OH
34. When a part with a maximum frequency above 400 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being
operated and outputs data with the output timings of that frequency range.
35. This part has a voltage regulator internally; t
initiated.
is the time that the power must be supplied above V minimum initially before a read or write operation can be
DD
POWER
36. These parameters are extrapolated from the input timing parameters (t
/2 – 250 ps, where 250 ps is the internal jitter). These parameters are only guaranteed by
CYC
design and are not tested in production.
37. t
, t
, are specified with a load capacitance of 5 pF as in (b) of Figure 5 on page 23. Transition is measured ±100 mV from steady-state voltage.
CHZ CLZ
38. At any voltage and temperature t
is less than t
and t
less than t
.
CHZ
CLZ
CHZ
CO
39. t
spec is applicable for both rising and falling edges of QVLD signal.
QVLD
40. Hold to >V or <V .
IH
IL
Document Number: 001-44141 Rev. *Q
Page 24 of 31
CY7C2663KV18/CY7C2665KV18
Switching Waveforms
Read/Write/Deselect Sequence
Figure 6. Waveform for 2.5-Cycle Read Latency [41, 42, 43]
WRITE
3
READ
4
NOP
1
READ
2
WRITE
5
NOP
6
7
8
K
t
t
KL
t
t
KH
CYC
KHKH
K
RPS
t
t
SC HC
t
t
SC
HC
WPS
A
A0
A1
A2
A3
t
t
HD
t
t
HD
SA
HA
t
SD
t
SD
D11
D12
D30
D32
D33
t
D10
QVLD
D13
D31
D
QVLD
t
QVLD
t
DOH
t
t
CQDOH
CO
t
t
CHZ
t
CLZ
t
CQD
Q
Q00 Q01 Q02
CCQO
Q20 Q21 Q22
Q23
Q03
(Read Latency = 2.5 Cycles)
CQOH
CQ
CQ
CCQO
t
t
t
CQHCQH
CQH
CQOH
DON’T CARE
UNDEFINED
Notes
41. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.
42. Outputs are disabled (High Z) one clock cycle after a NOP.
43. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11, Q22 = D12, and Q23 = D13. Write data is forwarded immediately as read results. This note
applies to the whole diagram.
Document Number: 001-44141 Rev. *Q
Page 25 of 31
CY7C2663KV18/CY7C2665KV18
Ordering Information
The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local
sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at
http://www.cypress.com/products
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office
closest to you, visit us at http://www.cypress.com/go/datasheet/offices.
Speed
(MHz)
Package
Diagram
Operating
Range
Ordering Code
Package Type
450 CY7C2663KV18-450BZI
CY7C2665KV18-450BZI
51-85195 165-ball FBGA (15 × 17 × 1.4 mm)
165-ball FBGA (15 × 17 × 1.4 mm) Pb-free
51-85195 165-ball FBGA (15 × 17 × 1.4 mm)
165-ball FBGA (15 × 17 × 1.4 mm) Pb-free
Industrial
CY7C2663KV18-450BZXC
CY7C2665KV18-450BZXI
550 CY7C2663KV18-550BZI
CY7C2665KV18-550BZI
Commercial
Industrial
Industrial
CY7C2663KV18-550BZXC
CY7C2665KV18-550BZXC
CY7C2663KV18-550BZXI
CY7C2665KV18-550BZXI
Commercial
Industrial
Ordering Code Definitions
CY
7
C
26XX
K V18 -
XXX
X
X
BZ
Temperature Grade: X = C or I
C = Commercial; I = Industrial
Pb-free
Package Type: BZ = 165-ball FBGA
Frequency Range: XXX = 450 MHz or 550 MHz
V18 = 1.8 V
Die Revision
Part Identifier: 26XX = 2663 or 2665
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 001-44141 Rev. *Q
Page 26 of 31
CY7C2663KV18/CY7C2665KV18
Package Diagram
Figure 7. 165-ball FBGA (15 × 17 × 1.40 mm (0.50 Ball Diameter)) Package Outline, 51-85195
51-85195 *D
Document Number: 001-44141 Rev. *Q
Page 27 of 31
CY7C2663KV18/CY7C2665KV18
Acronyms
Document Conventions
Units of Measure
Symbol
Acronym
Description
BWS
DDR
DLL
Byte Write Select
Unit of Measure
Double Data Rate
Delay Lock Loop
°C
degree Celsius
failure in time per device
FIT/Dev
FIT/Mb
MHz
µA
failure in time per mega bit
megahertz
microampere
microsecond
milliampere
millimeter
millisecond
nanosecond
ohm
FBGA
HSTL
I/O
Fine-Pitch Ball Grid Array
High-Speed Transceiver Logic
Input/Output
µs
JTAG
LSB
Joint Test Action Group
Least Significant Bit
Logical Single-Bit Upsets
Logical Multi-Bit Upsets
Most Significant Bit
On-Die Termination
Phase Locked Loop
Quad Data Rate
mA
mm
ms
LSBU
LMBU
MSB
ODT
PLL
ns
%
percent
pF
picofarad
QDR
SEL
V
volt
Single Event Latch-up
Static Random Access Memory
Test Access Port
W
watt
SRAM
TAP
TCK
TDI
Test Clock
Test Data-In
TDO
TMS
Test Data-Out
Test Mode Select
Document Number: 001-44141 Rev. *Q
Page 28 of 31
CY7C2663KV18/CY7C2665KV18
Document History Page
Document Title: CY7C2663KV18/CY7C2665KV18, 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read
Latency) with ODT
Document Number: 001-44141
Orig. of
Change
Submission
Date
Rev.
ECN
Description of Change
**
1980429 VKN / AESA See ECN New data sheet.
*A
2557050 VKN / AESA 09/24/2008 Updated Identification Register Definitions (Changed Revision Number
(31:29) from 001 to 000).
Updated Power-Up Sequence in QDR II+ SRAM (Updated description and
Figure 4).
Updated Electrical Characteristics (Updated DC Electrical Characteristics
(Updated maximum values of IDD and ISB1 parameters)).
Updated Thermal Resistance (Replaced values of JA and JC parameters
from TBD to respective Thermal Values for all Packages).
Updated to new template.
*B
2806011 VKN / PYRS
11/12/09
Added Neutron Soft Error Immunity.
Updated Capacitance (Changed value of Input Capacitance (CIN) from 2 pF
to 4 pF, changed value of Output Capacitance (CO) from 3 pF to 4 pF).
Updated Switching Characteristics (Changed maximum values of tCO, tCCQO
,
t
CHZ parameters to 450 ps for 550 MHz, 500 MHz and 450 MHz frequencies,
changed minimum values of tDOH, tCQOH, tCLZ parameters to –450 ps for
550 MHz, 500 MHz and 450 MHz frequencies).
Updated Ordering Information(By including parts that are available, and added
disclaimer at the top of Ordering Information table).
Updated Package Diagram.
*C
2886418
NJY
03/02/2010 Updated Switching Characteristics (Changed minimum value of tHCDDR and
tHD from 0.28 ns to 0.22 ns for 450 MHz).
Updated Ordering Information (Removed inactive parts).
Updated links in Sales, Solutions, and Legal Information.
*D
*E
2975354
3024181
NJY
NJY
07/09/2010 Updated Ordering Information (Added part CY7C2663KV18-550BZI in the
Ordering Information table).
09/07/2010 Changed status from Preliminary to Final.
Updated Ordering Information (Updated part numbers).
Added Units of Measure.
*F
3242369
NJY
04/27/2011 Updated Ordering Information (Updated part numbers).
Updated to new template.
*G
*H
3275033
3429006
NJY
06/06/2011 No technical updates.
PRIT
11/03/2011 Updated Ordering Information (Updated part numbers).
Updated Package Diagram.
*I
3599727 AVIA / PRIT 04/25/2012 Updated Features (Removed CY7C2661KV18, CY7C2676KV18 related
information).
Updated Configurations (Removed CY7C2661KV18, CY7C2676KV18 related
information).
UpdatedFunctionalDescription(RemovedCY7C2661KV18, CY7C2676KV18
related information).
Updated Selection Guide (Removed 500 MHz, 400 MHz frequencies related
information, removed CY7C2661KV18, CY7C2676KV18 related information).
Removed Logic Block Diagram – CY7C2661KV18.
Removed Logic Block Diagram – CY7C2676KV18.
Updated Pin Configurations (Removed CY7C2661KV18, CY7C2676KV18
related information).
Updated Pin Definitions (Removed CY7C2661KV18, CY7C2676KV18 related
information).
Document Number: 001-44141 Rev. *Q
Page 29 of 31
CY7C2663KV18/CY7C2665KV18
Document History Page (continued)
Document Title: CY7C2663KV18/CY7C2665KV18, 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read
Latency) with ODT
Document Number: 001-44141
Orig. of
Change
Submission
Date
Rev.
ECN
Description of Change
*I (cont.)
3599727 AVIA / PRIT 04/25/2012 Updated Functional Overview (Removed CY7C2661KV18, CY7C2676KV18
related information).
Updated Truth Table (Removed CY7C2661KV18, CY7C2676KV18 related
information).
Updated Write Cycle Descriptions (Removed CY7C2661KV18 related
information).
Removed Write Cycle Descriptions (Corresponding to CY7C2676KV18).
Updated Identification Register Definitions (Removed CY7C2661KV18,
CY7C2676KV18 related information).
Updated Electrical Characteristics (Removed 500 MHz, 400 MHz frequencies
related information, removed CY7C2661KV18, CY7C2676KV18 related
information).
Updated Switching Characteristics (Removed 500 MHz, 400 MHz frequencies
related information).
*J
3744448
3794817
PRIT
PRIT
09/14/2012 Updated Ordering Information (Updated part numbers).
*K
10/26/2012 No technical updates.
Completing Sunset Review.
*L
4372887
PRIT
05/07/2014 Updated Application Example:
Updated Figure 2.
Updated Thermal Resistance:
Updated values of JA and JC parameters.
Included JB parameter and its details.
Updated to new template.
*M
*N
4404184
4575228
PRIT
PRIT
06/10/2014 Updated Ordering Information (Updated part numbers).
11/20/2014 Updated Functional Description:
Added “For a complete list of related documentation, click here.” at the end.
*O
5059167
PRIT
12/21/2015 Updated Package Diagram:
spec 51-85195 – Changed revision from *C to *D.
Updated to new template.
Completing Sunset Review.
*P
5333901
PRIT
07/01/2016 Updated TAP Electrical Characteristics:
Updated Note 18.
Updated to new template.
*Q
5975692 AESATMP9 11/24/2017 Updated logo and Copyright.
Document Number: 001-44141 Rev. *Q
Page 30 of 31
CY7C2663KV18/CY7C2665KV18
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
®
Products
PSoC Solutions
ARM® Cortex® Microcontrollers
cypress.com/arm
cypress.com/automotive
cypress.com/clocks
cypress.com/interface
cypress.com/iot
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6
Automotive
Cypress Developer Community
Clocks & Buffers
Interface
Forums | WICED IOT Forums | Projects | Video | Blogs |
Training | Components
Internet of Things
Memory
Technical Support
cypress.com/memory
cypress.com/mcu
cypress.com/support
Microcontrollers
PSoC
cypress.com/psoc
Power Management ICs
Touch Sensing
USB Controllers
Wireless Connectivity
cypress.com/pmic
cypress.com/touch
cypress.com/usb
cypress.com/wireless
© Cypress Semiconductor Corporation, 2008-2017. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document,
including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress
hereby grants you a personal, non-exclusive, nontransferable license (without the right to sublicense) (1) under its copyright rights in the Software (a) for Software provided in source code form, to
modify and reproduce the Software solely for use with Cypress hardware products, only internally within your organization, and (b) to distribute the Software in binary code form externally to end users
(either directly or indirectly through resellers and distributors), solely for use on Cypress hardware product units, and (2) under those claims of Cypress's patents that are infringed by the Software (as
provided by Cypress, unmodified) to make, use, distribute, and import the Software solely for use with Cypress hardware products. Any other use, reproduction, modification, translation, or compilation
of the Software is prohibited.
TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
OR ACCOMPANYING HARDWARE, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. To the extent
permitted by applicable law, Cypress reserves the right to make changes to this document without further notice. Cypress does not assume any liability arising out of the application or use of any
product or circuit described in this document. Any information provided in this document, including any sample design information or programming code, is provided only for reference purposes. It is
the responsibility of the user of this document to properly design, program, and test the functionality and safety of any application made of this information and any resulting product. Cypress products
are not designed, intended, or authorized for use as critical components in systems designed or intended for the operation of weapons, weapons systems, nuclear installations, life-support devices or
systems, other medical devices or systems (including resuscitation equipment and surgical implants), pollution control or hazardous substances management, or other uses where the failure of the
device or system could cause personal injury, death, or property damage ("Unintended Uses"). A critical component is any component of a device or system whose failure to perform can be reasonably
expected to cause the failure of the device or system, or to affect its safety or effectiveness. Cypress is not liable, in whole or in part, and you shall and hereby do release Cypress from any claim,
damage, or other liability arising from or related to all Unintended Uses of Cypress products. You shall indemnify and hold Cypress harmless from and against all claims, costs, damages, and other
liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products.
Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
Document Number: 001-44141 Rev. *Q
Revised November 24, 2017
Page 31 of 31
相关型号：
CY7C2670KV18
144-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CYPRESS
©2020 ICPDF网 联系我们和版权申明