MT58L256L18F1F-8.5_技术文档

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

4Mb SYNCBURST^™

SRAM

MT58L256L18F1, MT58L128L32F1,

MT58L128L36F1; MT58L256V18F1,

MT58L128V32F1, MT58L128V36F1

3.3V VDD, 3.3V or 2.5V I/O, Flow-Through

FEATURES

1

100-PinTQFP

• Fast clock and OE# access times

• Single +3.3V +0.3V/-0.165V power supply (V^DD)

• Separate +3.3V or +2.5V isolated output buffer

supply (V^DDQ)

• SNOOZE MODE for reduced-power standby

• Common data inputs and data outputs

• Individual BYTE WRITE control and GLOBAL WRITE

• Three chip enables for simple depth expansion

and address pipelining

• Clock-controlled and registered addresses, data

I/Os and control signals

• Internally self-timed WRITE cycle

• Burst control pin (interleaved or linear burst)

• Automatic power-down

• 165-pin FBGA package

• 100-pin TQFP package

• Low capacitive bus loading

165-PinFBGA

• x18, x32, and x36 versions available

OPTIONS

MARKING

• Timing (Access/Cycle/MHz)

6.8ns/7.5ns/133 MHz

7.5ns/8.8ns/113 MHz

8.5ns/10ns/100 MHz

10ns/15ns/66 MHz

-6.8

-7.5

-8.5

-10

• Configurations

3.3V I/O

256K x 18

128K x 32

128K x 36

2.5V I/O

MT58L256L18F1

MT58L128L32F1

MT58L128L36F1

NOTE: 1. JEDEC-standardMS-026BHA(LQFP).

256K x 18

128K x 32

128K x 36

MT58L256V18F1

MT58L128V32F1

MT58L128V36F1

GENERALDESCRIPTION

The Micron^®SyncBurst^™SRAM family employs

high-speed, low-power CMOS designs that are fabri-

cated using an advanced CMOS process.

• Packages

100-pin TQFP

165-pin FBGA

T

F*

Micron’s 4Mb SyncBurst SRAMs integrate a 256K x

18, 128K x 32, or 128K x 36 SRAM core with advanced

synchronous peripheral circuitry and a 2-bit burst

counter. All synchronous inputs pass through registers

controlled by a positive-edge-triggered single clock in-

put (CLK). The synchronous inputs include all ad-

dresses, all data inputs, active LOW chip enable (CE#),

two additional chip enables for easy depth expansion

(CE2#, CE2), burst control inputs (ADSC#, ADSP#,

ADV#), byte write enables (BWx#) and global write

(GW#).

• Operating Temperature Range

Commercial (0°C to +70°C)

None

IT

Industrial (-40°C to +85°C)**

Part Number Example:

MT58L256L18F1T-8.5

* A Part Marking Guide for the FBGA devices can be found on Micron’s

Web site—http://www.micron.com/support/index.html.

** Industrial temperature range offered in specific speed grades and

configurations. Contact factory for more information.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

1

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

FUNCTIONALBLOCKDIAGRAM

256K x 18

18

16

18

2

ADDRESS

REGISTER

SA0, SA1, SA

MODE

SA0-SA1

Q1

SA1'

SA0'

ADV#

CLK

BINARY

COUNTER AND

LOGIC

CLR

Q0

ADSC#

ADSP#

BYTE “b”

WRITE DRIVER

BYTE “b”

WRITE REGISTER

9

DQs

DQPa

DQPb

BWb#

256K x 9 x 2

MEMORY

ARRAY

OUTPUT

BUFFERS

SENSE

AMPS

18

BYTE “a”

WRITE DRIVER

BYTE “a”

WRITE REGISTER

BWa#

BWE#

INPUT

REGISTERS

GW#

18

ENABLE

REGISTER

CE#

CE2

CE2#

2

OE#

FUNCTIONALBLOCKDIAGRAM

128K x 32/36

17

15

17

ADDRESS

SA0, SA1, SA

MODE

REGISTER

SA0-SA1

Q1

Q0

ADV#

CLK

BINARY

COUNTER

AND LOGIC

SA1'

SA0'

CLR

ADSC#

ADSP#

BYTE “d”

WRITE DRIVER

BYTE “d”

WRITE REGISTER

9

BWd#

9

128K x 8 x 4

(x32)

BYTE “c”

WRITE DRIVER

BYTE “c”

WRITE REGISTER

BWc#

DQs

DQPa

OUTPUT

BUFFERS

128K x 9 x 4

(x36)

SENSE 36

AMPS

36

BYTE “b”

WRITE DRIVER

MEMORY

ARRAY

9

BYTE “b”

WRITE REGISTER

9

BWb#

DQPd

BYTE “a”

WRITE DRIVER

BYTE “a”

WRITE REGISTER

BWa#

BWE#

INPUT

REGISTERS

GW#

36

ENABLE

REGISTER

CE#

CE2

CE2#

OE#

4

NOTE: Functional block diagrams illustrate simplified device operation. See truth tables, pin descriptions, and timing diagrams

for detailed information.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

2

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

GENERALDESCRIPTION(continued)

Asynchronous inputs include the output enable

(OE#), clock (CLK) and snooze enable (ZZ). There is

also a burst mode input (MODE) that selects between

interleaved and linear burst modes. The data-out (Q),

enabled by OE#, is also asynchronous. WRITE cycles

can be from one to two bytes wide (x18) or from one to

four bytes wide (x32/x36), as controlled by the write

control inputs.

Burst operation can be initiated with either address

status processor (ADSP#) or address status controller

(ADSC#) inputs. Subsequent burst addresses can be

internally generated as controlled by the burst advance

input (ADV#).

BWa# controls DQa pins and DQPa; BWb# controls DQb

pins and DQPb. During WRITE cycles on the x32 and

x36 devices, BWa# controls DQa pins and DQPa; BWb#

controls DQb pins and DQPb; BWc# controls DQc pins

and DQPc; BWd# controls DQd pins and DQPd. GW#

LOW causes all bytes to be written. Parity bits are only

available on the x18 and x36 versions.

Micron’s 4Mb SyncBurst SRAMs operate from a +3.3V

V^DDpower supply, and all inputs and outputs are TTL-

compatible. Users can choose either a 2.5V or 3.3V I/O

version. The device is ideally suited for 486, Pentium^®,

and PowerPC systems and those systems that benefit

from a wide synchronous data bus. The device is also

ideal in generic 16-, 18-, 32-, 36-, 64-, and 72-bit-wide

applications.

Address and write control are registered on-chip to

simplify WRITE cycles. This allows self-timed WRITE

cycles. Individual byte enables allow individual bytes

to be written. During WRITE cycles on the x18 device,

Please refer to Micron’s Web site (www.micron.com/

sramds) for the latest data sheet.

TQFPPINASSIGNMENTTABLE

PIN#

1

2

3

4

5

6

7

8

x18

NC

x32/x36

NC/DQPc*

DQc

PIN #

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

43

44

45

46

47

48

49

50

x18

x32/x36

PIN #

51

52

53

54

55

56

57

58

59

60

61

62

63

64

65

66

67

68

69

70

71

72

73

74

75

x18

NC

x32/x36

NC/DQPa*

DQa

PIN #

76

77

78

79

80

81

82

83

84

85

86

87

88

89

90

91

92

93

94

95

96

97

98

99

100

x18

x32/x36

VSS

VDDQ

DQc

NC

DQd

NC/DQPd*

MODE

DQa

NC

SA

DQb

NC/DQPb*

SA

ADV#

ADSP#

ADSC#

OE#

BWE#

GW#

CLK

VDDQ

VSS

VDDQ

VSS

NC

DQb

DQc

NC

DQa

SA

DQa

VSS

VDDQ

DQa

ZZ

VDD

NC

VSS

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

VSS

VDDQ

SA

SA1

SA0

DNU

VSS

VDD

NF**

SA

DQb

DQc

VSS

VDD

NC

VSS

VDD

VSS

CE2#

BWa#

BWb#

DQb

DQd

DQa

DQb

VDDQ

VSS

SA

VDDQ

VSS

NC

BWc#

BWd#

DQb

DQPb

NC

DQd

DQa

DQPa

NC

DQb

CE2

CE#

SA

*No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.

**Pins 43 and 42 are reserved for address expansion, 8Mb and 16Mb respectively.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

3

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

PINASSIGNMENT(TOPVIEW)

100-PINTQFP

80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51

SA

81

50

49

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

SA

82

83

84

85

86

87

88

89

90

91

92

93

94

95

96

97

98

99

SA

ADV#

ADSP#

ADSC#

OE#

SA

BWE#

GW#

CLK

SA

NF**

V

SS

DD

V

DD

SS

V

x18

CE2#

BWa#

BWb#

NC

DNU

SA0

SA1

SA

NC

CE2

CE#

SA

100

MODE

1

2

3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30

80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51

SA

81

50

49

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

SA

ADV#

ADSP#

ADSC#

OE#

82

83

84

85

86

87

88

89

90

91

92

93

94

95

96

97

98

99

SA

BWE#

GW#

SA

NF**

CLK

V

SS

DD

V

DD

SS

V

x32/x36

CE2#

BWa#

BWb#

BWc#

BWd#

CE2

DNU

SA0

SA1

SA

CE#

SA

100

MODE

1

2

3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30

*No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.

**Pins 43 and 42 are reserved for address expansion, 8Mb and 16Mb respectively.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

4

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

TQFPPINDESCRIPTIONS

x18

x32/x36

SYMBOL TYPE

DESCRIPTION

37

36

37

36

SA0

SA1

SA

Input Synchronous Address Inputs: These inputs are registered and

must meet the setup and hold times around the rising edge of

CLK.

32–35, 44–50, 32–35, 44–50,

80–82, 99,

100

81, 82, 99,

100

93

94

–

93

94

95

96

BWa#

BWb#

BWc#

BWd#

Input Synchronous Byte Write Enables: These active LOW inputs allow

individual bytes to be written and must meet the setup and hold

times around the rising edge of CLK. A byte write enable is LOW

for a WRITE cycle and HIGH for a READ cycle. For the x18 version,

BWa# controls DQa pins and DQPa; BWb# controls DQb pins and

DQPb. For the x32 and x36 versions, BWa# controls DQa pins and

DQPa; BWb# controls DQb pins and DQPb; BWc# controls DQc pins

and DQPc; BWd# controls DQd pins and DQPd. Parity is only

available on the x18 and x36 versions.

–

87

88

89

87

88

89

BWE#

GW#

CLK

Input Byte Write Enable: This active LOW input permits BYTE WRITE

operations and must meet the setup and hold times around the

rising edge of CLK.

Input Global Write: This active LOW input allows a full 18-, 32- or 36-bit

WRITE to occur independent of the BWE# and BWx# lines and must

meet the setup and hold times around the rising edge of CLK.

Input Clock: This signal registers the address, data, chip enable, byte write

enables and burst control inputs on its rising edge. All synchronous

inputs must meet setup and hold times around the clock’s rising

edge.

98

92

97

98

92

97

CE#

CE2#

CE2

Input Synchronous Chip Enable: This active LOW input is used to enable

the device and conditions the internal use of ADSP#. CE# is sampled

only when a new external address is loaded.

Input Synchronous Chip Enable: This active LOW input is used to enable

the device and is sampled only when a new external address is

loaded.

Input Synchronous Chip Enable: This active HIGH input is used to enable

the device and is sampled only when a new external address is

loaded.

86

83

86

83

OE#

Input Output Enable: This active LOW, asynchronous input enables the

data I/O output drivers.

ADV#

Input Synchronous Address Advance: This active LOW input is used to

advance the internal burst counter, controlling burst access after

the external address is loaded. A HIGH on this pin effectively causes

wait states to be generated (no address advance). To ensure use of

correct address during a WRITE cycle, ADV# must be HIGH at the

rising edge of the first clock after an ADSP# cycle is initiated.

84

ADSP#

Input Synchronous Address Status Processor: This active LOW input

interrupts any ongoing burst, causing a new external address to be

registered. A READ is performed using the new address,

independent of the byte write enables and ADSC#, but dependent

upon CE#, CE2 and CE2#. ADSP# is ignored if CE# is HIGH. Power-

down state is entered if CE2 is LOW or CE2# is HIGH.

(continued on next page)

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

5

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

TQFPPINDESCRIPTIONS(continued)

x18

x32/x36

SYMBOL TYPE

DESCRIPTION

85

ADSC#

Input Synchronous Address Status Controller: This active LOW input

interrupts any ongoing burst, causing a new external address to be

registered. A READ or WRITE is performed using the new address if

CE# is LOW. ADSC# is also used to place the chip into power-down

state when CE# is HIGH.

31

64

31

64

MODE

ZZ

Input Mode: This input selects the burst sequence. A LOW on this pin

selects “linear burst.” NC or HIGH on this pin selects “interleaved

burst.” Do not alter input state while device is operating.

Input Snooze Enable: This active HIGH, asynchronous input causes the

device to enter a low-power standby mode in which all data in the

memory array is retained. When ZZ is active, all other inputs are

ignored.

(a) 58, 59,

62, 63, 68, 69, 56–59, 62, 63

72, 73

(b) 8, 9, 12,

13, 18, 19, 72–75, 78, 79

22, 23

(a) 52, 53,

DQa

DQb

Input/ SRAM Data I/Os: For the x18 version, Byte “a” is DQa pins; Byte

Output “b” is DQb pins. For the x32 and x36 versions, Byte “a” is DQa

pins; Byte “b” is DQb pins; Byte “c” is DQc pins; Byte “d” is

DQd pins. Input data must meet setup and hold times around

the rising edge of CLK.

(b) 68, 69,

(c) 2, 3, 6–9,

12, 13

(d) 18, 19,

DQc

DQd

22–25, 28, 29

74

24

–

51

80

1

NC/DQPa NC/ No Connect/Parity Data I/Os: On the x32 version, these pins are

NC/DQPb

NC/DQPc

NC/DQPd

I/O

No Connect (NC). On the x18 version, Byte “a” parity is DQPa;

Byte “b” parity is DQPb. On the x36 version, Byte “a” parity is

DQPa; Byte “b” parity is DQPb; Byte “c” parity is DQPc; Byte

“d” parity is DQPd.

–

30

15, 41, 65, 91 15, 41, 65, 91

VDD

Supply Power Supply: See DC Electrical Characteristics and Operating

Conditions for range.

4, 11, 20, 27, 4, 11, 20, 27,

54, 61, 70, 77 54, 61, 70, 77

V

DDQ

Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and

Operating Conditions for range.

5, 10, 14, 17, 5, 10, 14, 17,

21, 26, 40, 55, 21, 26, 40, 55,

VSS

Supply Ground: GND.

60, 67, 71,

76, 90

60, 67, 71,

76, 90

38, 39

DNU

NC

–

Do Not Use: These signals may either be unconnected or wired to

GND to improve package heat dissipation.

1–3, 6, 7, 16,

25, 28–30,

51–53, 56,

16, 66

No Connect: These signals are not internally connected and

may be connected to ground to improve package heat

dissipation.

57, 66, 75,

78, 79, 95, 96

42, 43

NF

–

No Function: These pins are internally connected to the die and

will have the capacitance of input pins. It is allowable to leave

these pins unconnected or driven by signals. Reserved for

address expansion, pin 43 becomes an SA at 8Mb density and

pin 42 becomes an SA at 16Mb density.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

6

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

PINLAYOUT(TOPVIEW)

165-PINFBGA

x18

x32/x36

1

2

3

4

5

6

7

8

9

10

11

1

2

3

4

5

6

7

8

9

10

11

A

B

C

D

E

A

B

C

D

E

A

B

C

D

E

A

B

C

D

E

NC

SA

CE# BWb#

NC

CE2# BWE# ADSC# ADV#

SA

NC

SA

CE# BWc# BWb# CE2# BWE# ADSC# ADV#

SA

NC

CE2

NC

BWa# CLK

GW# OE# (G#) ADSP# SA

CE2 BWd# BWa# CLK

GW# OE# (G#) ADSP# SA

NC

V

DD

Q

V

SS

VSS

V

SS

V

SS

V

SS

V

DD

Q

NC

DQPa

DQa

ZZ

NF/DQPc* NC

V

DD

Q

V

SS

V

SS

V

SS

V

SS

V

SS

V

DD

Q

NC NF/DQPb*

DQb DQb

DQb

V

Q

VDD

V

DD

DQc

V

DD

V

DD

NC

F

NC

G

H

J

G

H

J

G

H

J

G

H

J

NC

VSS

NC

V

SS

VSS

NC

ZZ

DQb

DQPb

NC

V

DD

Q

V

DD

Q

DQa

NC

DQd DQd

NF/DQPd* NC

V

DD

Q

V

DD

Q

DQa

K

L

K

L

K

L

K

L

V

Q

V

Q

NC

V

Q

V

Q

NC

M

N

P

M

N

P

M

N

P

M

N

P

NC

VSS

NC

SA1

SA0

V

SS

NC

V

SS

NC

SA1

SA0

V

SS

NC NF/DQPa*

SA

DNU

SA

NC

SA

DNU

SA

R

MODE NC

(LBO#)

SA

MODE NC

(LBO#)

TOP VIEW

*No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.

NOTE: 1. Pins 11P, and 6N reserved for address pin expansion; 8Mb, and 16Mb respectively.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

7

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

FBGAPINDESCRIPTIONS

x18

x32/x36

SYMBOL TYPE

DESCRIPTION

6R

6P

6R

6P

SA0

SA1

SA

Input Synchronous Address Inputs: These inputs are registered and must

meet the setup and hold times around the rising edge of CLK.

2A, 2B, 3P,

3R, 4P, 4R,

2A, 2B, 3P,

3R, 4P, 4R,

8P, 8R, 9P, 9R, 8P, 8R, 9P,

10A, 10B, 10P, 9R, 10A, 10B,

10R, 11A, 11R 10P, 10R, 11R

5B

4A

–

5B

5A

4A

4B

BWa#

BWb#

BWc#

BWd#

Input Synchronous Byte Write Enables: These active LOW inputs allow

individual bytes to be written and must meet the setup and hold

times around the rising edge of CLK. A byte write enable is LOW

for a WRITE cycle and HIGH for a READ cycle. For the x18 version,

BWa# controls DQas and DQPa; BWb# controls DQbs and DQPb. For

the x32 and x36 versions, BWa# controls DQas and DQPa; BWb#

controls DQbs and DQPb; BWc# controls DQcs and DQPc; BWd#

controls DQds and DQPd. Parity is only available on the x18 and x36

versions.

–

7A

7B

6B

7A

7B

6B

BWE#

GW#

CLK

Input Byte Write Enable: This active LOW input permits BYTE WRITE

operations and must meet the setup and hold times around the

rising edge of CLK.

Input Global Write: This active LOW input allows a full 18-, 32-, or 36-bit

WRITE to occur independent of the BWE# and BWx# lines and must

meet the setup and hold times around the rising edge of CLK.

Input Clock: This signal registers the address, data, chip enable, byte write

enables, and burst control inputs on its rising edge. All synchronous

inputs must meet setup and hold times around the clock’s rising

edge.

3A

6A

3A

6A

CE#

CE2#

ZZ

Input Synchronous Chip Enable: This active LOW input is used to enable

the device and conditions the internal use of ADSP#. CE# is sampled

only when a new external address is loaded.

Input Synchronous Chip Enable: This active LOW input is used to enable

the device and is sampled only when a new external address is

loaded.

11H

Input Snooze Enable: This active HIGH, asynchronous input causes the

device to enter a low-power standby mode in which all data in the

memory array is retained. When ZZ is active, all other inputs are

ignored.

3B

CE2

Input Synchronous Chip Enable: This active HIGH input is used to enable

the device and is sampled only when a new external address is

loaded.

8B

9A

8B

9A

OE#(G#)

ADV#

Input Output Enable: This active LOW, asynchronous input enables the

data I/O output drivers.

Input Synchronous Address Advance: This active LOW input is used to

advance the internal burst counter, controlling burst access after the

external address is loaded. A HIGH on ADV# effectively causes wait

states to be generated (no address advance). To ensure use of

correct address during a WRITE cycle, ADV# must be HIGH at the

rising edge of the first clock after an ADSP# cycle is initiated.

(continued on next page)

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

8

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

FBGA PIN DESCRIPTIONS (continued)

x18

x32/x36

SYMBOL TYPE

DESCRIPTION

9B

ADSP#

Input Synchronous Address Status Processor: This active LOW input

interrupts any ongoing burst, causing a new external address to be

registered. A READ is performed using the new address,

independent of the byte write enables and ADSC#, but dependent

upon CE#, CE2 and CE2#. ADSP# is ignored if CE# is HIGH. Power-

down state is entered if CE2 is LOW or CE2# is HIGH.

8A

1R

8A

1R

ADSC#

Input Synchronous Address Status Controller: This active LOW input

interrupts any ongoing burst, causing a new external address to be

registered. A READ or WRITE is performed using the new address if

CE# is LOW. ADSC# is also used to place the chip into power-down

state when CE# is HIGH.

MODE

(LB0#)

Input Mode: This input selects the burst sequence. A LOW on this input

selects “linear burst.” NC or HIGH on this input selects “interleaved

burst.” Do not alter input state while device is operating.

(a) 10J, 10K, (a) 10J, 10K,

10L, 10M, 11D, 10L, 10M, 11J,

11E, 11F, 11G 11K, 11L, 11M

DQa

DQb

DQc

DQd

Input/ SRAM Data I/Os: For the x18 version, Byte “a” is associated DQas;

Output Byte “b” is associated with DQbs. For the x32 and x36 versions,

Byte “a” is associated with DQas; Byte “b” is associated with DQbs;

Byte “c” is associated with DQcs; Byte “d” is associated with DQds.

Input data must meet setup and hold times around the rising edge

of CLK.

(b) 1J, 1K,

(b) 10D, 10E,

1L, 1M, 2D, 10F, 10G, 11D,

2E, 2F, 2G

11E, 11F, 11G

(c) 1D, 1E,

1F, 1G, 2D,

2E, 2F, 2G

(d) 1J, 1K, 1L,

1M, 2J, 2K,

2L, 2M

11C

1N

–

11N

11C

1C

NC/DQPa

NC/DQPb

NC/DQPc

NC/DQPd

NC/

I/O

No Connect/Parity Data I/Os: On the x32 version, these are No

Connect (NC). On the x18 version, Byte “a” parity is DQPa; Byte “b”

parity is DQPb. On the x36 version, Byte “a” parity is DQPa; Byte

“b” parity is DQPb; Byte “c” parity is DQPc; Byte “d” parity is DQPd.

–

1N

4D, 4E, 4F,

4G, 4H, 4J,

4K, 4L, 4M,

8D, 8E, 8F,

8G, 8H, 8J,

8K, 8L, 8M

4D, 4E, 4F,

4G, 4H, 4J,

4K, 4L, 4M,

8D, 8E, 8F,

8G, 8H, 8J,

8K, 8L, 8M

V

DD

Supply Power Supply: See DC Electrical Characteristics and Operating

Conditions for range.

3C, 3D, 3E,

3F, 3G, 3J,

3K, 3L, 3M,

3N, 9C, 9D,

9E, 9F, 9G,

9J, 9K, 9L,

9M, 9N

3C, 3D, 3E,

3F, 3G, 3J,

3K, 3L, 3M,

3N, 9C, 9D,

9E, 9F, 9G,

9J, 9K, 9L,

9M, 9N

V

DDQ

Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and

Operating Conditions for range.

(continued on next page)

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

9

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

FBGA PIN DESCRIPTIONS (continued)

x18

x32/x36

SYMBOL TYPE

Supply Ground: GND.

DESCRIPTION

1H, 2H, 4C, 4N, 1H, 2H, 4C, 4N,

5C, 5D, 5E 5F, 5C, 5D, 5E 5F,

5G, 5H, 5J, 5K, 5G, 5H, 5J, 5K,

5L, 5M, 6C, 6D, 5L, 5M, 6C, 6D,

6E, 6F, 6G, 6H, 6E, 6F, 6G, 6H,

6J, 6K, 6L, 6M, 6J, 6K, 6L, 6M,

7C, 7D, 7E, 7F, 7C, 7D, 7E, 7F,

V

SS

7G, 7H, 7J,

7K, 7L, 7M,

7N, 8C, 8N

7G, 7H, 7J,

7K, 7L, 7M,

7N, 8C, 8N

5P, 5R, 7P, 7R 5P, 5R, 7P, 7R

DNU

NC

–

Do Not Use: These signals may either be unconnected or wired to

GND to improve package heat dissipation.

1A, 1B, 1C,

1D, 1E, 1F,

1G, 1P, 2C,

2J, 2K,

1A, 1B, 1P,

2C, 2N,

2P, 2R, 3H,

5N, 6N,

No Connect: These signals are not internally connected and may

be connected to ground to improve package heat dissipation.

Pins 11P, and 6N reserved for address pin expansion; 8Mb, and

16Mb respectively.

2L, 2M, 2N,

2P, 2R, 3H,

4B, 5A, 5N,

6N, 9H, 10C,

10D, 10E, 10F,

10G, 10H,

10N, 11B,

9H, 10C,

10H, 10N,

11A, 11B,

11P

11J, 11K,

11L, 11M,

11N, 11P,

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

10

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH)

FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL)

X...X00

X...X01

X...X10

X...X11

X...X01

X...X00

X...X11

X...X10

X...X11

X...X00

X...X01

X...X11

X...X10

X...X01

X...X00

LINEAR BURST ADDRESS TABLE (MODE = LOW)

FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL)

X...X00

X...X01

X...X10

X...X11

X...X01

X...X10

X...X11

X...X00

X...X10

X...X11

X...X00

X...X01

X...X11

X...X00

X...X01

X...X10

PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x18)

FUNCTION

READ

GW#

H

BWE#

BWa#

BWb#

H

L

X

H

L

X

H

L

READ

H

WRITE Byte “a”

WRITE Byte “b”

WRITE All Bytes

H

L

H

L

H

L

H

L

X

PARTIALTRUTHTABLEFORWRITECOMMANDS(x32/x36)

FUNCTION

READ

GW#

BWE#

BWa#

BWb#

BWc#

BWd#

H

L

H

L

X

H

L

X

H

L

X

H

L

X

H

L

READ

WRITE Byte “a”

WRITE All Bytes

L

X

NOTE: Using BWE# and BWa# through BWd#, any one or more bytes may be written.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

11

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

TRUTHTABLE

OPERATION

ADDRESS

USED

CE# CE2# CE2 ZZ ADSP# ADSC# ADV# WRITE# OE#

CLK

DQ

DESELECT Cycle, Power-Down

SNOOZE MODE, Power-Down

READ Cycle, Begin Burst

None

H

X

H

X

H

X

L

X

L

H

L

X

L

X

L

X

L

X

L

X

L

L-H High-Z

None

L

None

L

X

L

None

L

H

X

L

None

L

X

H

X

L

None

X

L

X

L

X

High-Z

Q

External

READ Cycle, Begin Burst

L

H

X

L

L-H High-Z

WRITE Cycle, Begin Burst

READ Cycle, Begin Burst

L

H

X

H

X

H

X

H

X

L-H

D

Q

L

H

L

READ Cycle, Begin Burst

L

H

L

L-H High-Z

L-H

L-H High-Z

L-H

L-H High-Z

READ Cycle, Continue Burst

WRITE Cycle, Continue Burst

READ Cycle, Suspend Burst

WRITE Cycle, Suspend Burst

X

H

X

H

X

H

X

H

X

H

Q

H

L

Q

H

X

L

L-H

D

Q

L

Current

H

L

H

L

L-H High-Z

L-H

L-H High-Z

Q

H

X

L-H

D

L

NOTE: 1. X means “Don’t Care.” # means active LOW. H means logic HIGH. L means logic LOW.

2. For WRITE#, L means any one or more byte write enable signals (BWa#, BWb#, BWc# or BWd#) and BWE# are LOW or

GW# is LOW. WRITE# = H for all BWx#, BWE#, GW# HIGH.

3. BWa# enables WRITEs to DQas and DQPa. BWb# enables WRITEs to DQbs and DQPb. BWc# enables WRITEs to DQcs and

DQPc. BWd# enables WRITEs to DQds and DQPd. DQPa and DQPb are only available on the x18 and x36 versions. DQPc

and DQPd are only available on the x36 version.

4. All inputs except OE# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.

5. Wait states are inserted by suspending burst.

6. For a WRITE operation following a READ operation, OE# must be HIGH before the input data setup time and held HIGH

throughout the input data hold time.

7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.

8. ADSP# LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more

byte write enable signals and BWE# LOW or GW# LOW for the subsequent L-H edge of CLK. Refer to WRITE timing

diagram for clarification.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

12

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

*Stresses greater than those listed under “Absolute

Maximum Ratings” may cause permanent damage to

the device. This is a stress rating only, and functional

operation of the device at these or any other conditions

above those indicated in the operational sections of

this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may

affect reliability.

**Maximum junction temperature depends upon

package type, cycle time, loading, ambient tempera-

ture and airflow. See Micron Technical Note TN-05-14

for more information.

ABSOLUTEMAXIMUMRATINGS*

Voltage on VDD Supply

Relative to VSS .................................... -0.5V to +4.6V

Voltage on V^DDQ Supply

Relative to V^SS.................................... -0.5V to +4.6V

V^IN-0.5V to VDDQ + 0.5V

Storage Temperature (plastic) ........... -55°C to +150°C

Junction Temperature** ..................................... +150°C

Short Circuit Output Current.............................. 100mA

3.3VI/ODCELECTRICALCHARACTERISTICSANDOPERATINGCONDITIONS

(0°C ≤ T_A≤ +70°C; VDD, VDDQ = +3.3V +0.3V/-0.165V unless otherwise noted)

DESCRIPTION

CONDITIONS

SYMBOL MIN

MAX

VDD + 0.3

0.8

UNITS

V

NOTES

1, 2

3

Input High (Logic 1) Voltage

Input Low (Logic 0) Voltage

Input Leakage Current

Output Leakage Current

VIH

VIL

ILI

2.0

-0.3

-1.0

V

0V ≤ VIN ≤ VDD

1.0

µA

Output(s) disabled,

ILO

1.0

0V ≤ VIN ≤ VDD

Output High Voltage

Output Low Voltage

Supply Voltage

IOH = -4.0mA

IOL = 8.0mA

VOH

VOL

2.4

–

V

1, 4

1

0.4

3.6

VDD

3.135

Isolated Output Buffer Supply

VDDQ

1, 5

NOTE: 1. All voltages referenced to VSS (GND).

t

2. Overshoot:

VIH ≤ +4.6V for t ≤ KC/2 for I ≤ 20mA

t

Undershoot: V^IL≥ -0.7V for t ≤ KC/2 for I ≤ 20mA

Power-up: VIH ≤ +3.6V and VDD ≤ 3.135V for t ≤ 200ms

3. MODE pin has an internal pull-up, and input leakage = 10µA.

4. The load used for VOH, VOL testing is shown in Figure 2 for 3.3V I/O. AC load current is higher than the stated DC

values. AC I/O curves are available upon request.

5. VDDQ should never exceed VDD. VDD and VDDQ can be connected together, for 3.3V I/O operation only.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

13

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

TQFPCAPACITANCE

DESCRIPTION

CONDITIONS

T_A= 25°C; f = 1 MHz;

V^DD= 3.3V

SYMBOL

TYP

3

MAX

4

UNITS

pF

NOTES

Control Input Capacitance

Input/Output Capacitance (DQ)

Address Capacitance

Clock Capacitance

CI

CO

1

4

5

pF

CA

3

3.5

pF

CCK

3

pF

FBGACAPACITANCE

DESCRIPTION

CONDITIONS

SYMBOL TYP

MAX

UNITS NOTES

Address/Control Input Capacitance

Output Capacitance (Q)

Clock Capacitance

CI

CO

2.5

4

3.5

5

pF

1, 2

T_A= 25°C; f = 1 MHz

CCK

2.5

3.5

NOTE: 1. This parameter is sampled.

2. Preliminary package data.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

14

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

2.5VI/ODCELECTRICALCHARACTERISTICSANDOPERATINGCONDITIONS

(0°C ≤ T_A≤ +70°C; VDD = +3.3V +0.3V/-0.165V; VDDQ = +2.5V +0.4V/-0.125V unless otherwise noted)

DESCRIPTION

CONDITIONS

SYMBOL MIN

MAX

UNITS

NOTES

Input High (Logic 1) Voltage

Data bus (DQx)

Inputs

VIHQ

VIH

1.7

VDDQ + 0.3

VDD + 0.3

V

1, 2

Input Low (Logic 0) Voltage

Input Leakage Current

Output Leakage Current

VIL

ILI

-0.3

-1.0

0.7

1.0

V

1, 2

3

0V ≤ VIN ≤ VDD

µA

Output(s) disabled,

ILO

0V ≤ VIN ≤ VDDQ (DQx)

Output High Voltage

Output Low Voltage

IOH = -2.0mA

IOH = -1.0mA

VOH

1.7

2.0

–

V

1, 4

IOL = 2.0mA

IOL = 1.0mA

VOL

–

0.7

0.4

V

1, 4

Supply Voltage

VDD

3.135

2.375

3.6

2.9

V

1

Isolated Output Buffer Supply

VDDQ

NOTE: 1. All voltages referenced to VSS (GND).

t

2. Overshoot:

VIH ≤ +4.6V for t ≤ KC/2 for I ≤ 20mA

t

Undershoot: VIL ≥ -0.7V for t ≤ KC/2 for I ≤ 20mA

Power-up: V^IH≤ +3.6V and VDD ≤ 3.135V for t ≤ 200ms

3. MODE has an internal pull-up, and input leakage = 10µA.

4. The load used for V^OH, VOL testing is shown in Figure 4 for 2.5V I/O. AC load current is higher than the shown DC

values. AC I/O curves are available upon request.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

15

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

TQFPTHERMALRESISTANCE

DESCRIPTION

CONDITIONS

SYMBOL

TYP

UNITS NOTES

Thermal Resistance

(Junction to Ambient)

Test conditions follow standard test methods

and procedures for measuring thermal

impedance, per EIA/JESD51.

θ_JA

46

°C/W

1

Thermal Resistance

(Junction to Top of Case)

θ_JC

2.8

°C/W

1

FBGATHERMALRESISTANCE

DESCRIPTION

CONDITIONS

SYMBOL

TYP

UNITS NOTES

Junction to Ambient

(Airflow of 1m/s)

Test conditions follow standard test methods

and procedures for measuring thermal

impedance, per EIA/JESD51.

θ_JA

40

°C/W

1, 2

Junction to Case (Top)

θ_JC

θ_JB

9

°C/W

1, 2

Junction to Pins

(Bottom)

17

NOTE: 1. This parameter is sampled.

2. Preliminary package data.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

16

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

IDD OPERATINGCONDITIONSANDMAXIMUMLIMITS

(Note 1) (0°C ≤ T_A≤ +70°C; VDD = +3.3V +0.3V/-0.165V unless otherwise noted)

MAX

DESCRIPTION

CONDITIONS

SYMBOL TYP

-6.8 -7.5 -8.5

-10 UNITS NOTES

Power Supply

Current:

Operating

Device selected; All inputs ≤ VIL

t

or ≥ VIH; Cycle time ≥ KC (MIN);

I

DD

155

35

425 375 325 250

mA

2, 3, 4

VDD = MAX; Outputs open

Power Supply Device selected; V^DD= MAX; ADSC#,

Current: Idle

CMOS Standby

TTL Standby

Clock Running

ADSP#, ADV#, GW#, BWx# ≥ V^IH

;

IDD

1

115 100

85

65

All inputs ≤ VSS + 0.2 or ≥ VDDQ - 0.2;

t

Cycle time ≥ KC (MIN); Outputs open

Device deselected; V^DD= MAX;

All inputs ≤ V^SS+ 0.2 or ≥ VDDQ - 0.2;

All inputs static; CLK frequency = 0

I

SB

2

0.4

8

10

25

10

25

10

25

85

10

25

65

mA

3, 4

Device deselected; V^DD= MAX;

All inputs ≤ VIL or ≥ VIH

;

I

3

All inputs static; CLK frequency = 0

Device deselected; VDD = MAX;

ADSP#, ADV#, GW#, BWx# ≥ VIH

;

I

4

35

115 100

All inputs ≤ V^SS+ 0.2 or ≥ VDDQ - 0.2;

t

Cycle time ≥ KC (MIN)

NOTE: 1. VDDQ = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; VDDQ = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.

2. I^DDis specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and

greateroutputloading.

3. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means device

is active (not in power-down mode).

4. Typical values are measured at 3.3V, 25°C, and 15ns cycle time.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

17

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

ELECTRICALCHARACTERISTICSANDRECOMMENDEDACOPERATINGCONDITIONS

(Note 1) (0°C ≤ T_A≤ +70°C; VDD = +3.3V +0.3V/-0.165V unless otherwise noted)

-6.8

-7.5

-8.5

-10

DESCRIPTION

SYMBOL

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

UNITS

NOTES

Clock

Clock cycle time

t

KC

7.5

8.8

10

15

ns

MHz

ns

f

Clock frequency

KF

133

113

100

66

t

Clock HIGH time

KH

2.5

3.0

4.0

2

t

Clock LOW time

KL

ns

Output Times

t

Clock to output valid

Clock to output invalid

Clock to output in Low-Z

Clock to output in High-Z

OE# to output valid

OE# to output in Low-Z

OE# to output in High-Z

Setup Times

KQ

6.8

7.5

8.5

10

ns

t

KQX

1.5

3.0

3

t

KQLZ

3, 4, 5, 6

7

t

KQHZ

3.5

4.2

5.0

t

OEQ

t

OELZ

0

3, 4, 5, 6

t

OEHZ

3.5

4.2

5.0

t

Address

AS

1.5

1.8

2.0

ns

8, 9

t

Address status (ADSC#, ADSP#)

Address advance (ADV#)

ADSS

t

AAS

t

Byte write enables

WS

(BWa#-BWd#, GW#, BWE#)

t

Data-in

DS

1.5

1.8

2.0

ns

8, 9

t

Chip enable (CE#)

Hold Times

Address

CES

t

AH

0.5

ns

8, 9

t

Address status (ADSC#, ADSP#)

Address advance (ADV#)

ADSH

t

AAH

t

Byte write enables

WH

(BWa#-BWd#, GW#, BWE#)

t

Data-in

DH

0.5

ns

8, 9

t

Chip enable (CE#)

CEH

NOTE: 1. Test conditions as specified with the output loading shown in Figure 1 for 3.3V I/O (VDDQ = +3.3V +0.3V/-0.165V) and

Figure 3 for 2.5V I/O (VDDQ = +2.5V +0.4V/-0.125V) unless otherwise noted.

2. Measured as HIGH above VIH and LOW below VIL.

3. This parameter is measured with the output loading shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O.

4. This parameter is sampled.

5. Transition is measured 500mV from steady state voltage.

6. Refer to Technical Note TN-58-09, “Synchronous SRAM Bus Contention Design Considerations,” for a more thorough

discussion on these parameters.

7. OE# is a “Don’t Care” when a byte write enable is sampled LOW.

8. A READ cycle is defined by byte write enables all HIGH or ADSP# LOW for the required setup and hold times. A WRITE

cycle is defined by at least one byte write enable LOW and ADSP# HIGH for the required setup and hold times.

9. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK

when either ADSP# or ADSC# is LOW and chip enabled. All other synchronous inputs must meet the setup and hold

times with stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at

each rising edge of CLK when either ADSP# or ADSC# is LOW to remain enabled.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

18

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

3.3V I/O AC TEST CONDITIONS

2.5V I/O AC TEST CONDITIONS

Input pulse levels ................. VIH = (VDD/2.2) + 1.5V

Input pulse levels ............. VIH = (VDD/2.64) + 1.25V

....................V^IL= (VDD/2.2) - 1.5V

................V^IL= (VDD/2.64) - 1.25V

Input rise and fall times..................................... 1ns

Input timing reference levels ..................... VDD/2.2

Output reference levels ............................V^DDQ/2.2

Output load ............................. See Figures 1 and 2

Input rise and fall times..................................... 1ns

Input timing reference levels ................... VDD/2.64

Output reference levels ............................... V^DDQ/2

Output load ............................. See Figures 3 and 4

3.3V I/O Output Load Equivalents

2.5V I/O Output Load Equivalents

Q

Z_O= 50Ω

50Ω

V = 1.5V

Z_O= 50Ω

50Ω

V_T= 1.25V

T

Figure 1

Figure 3

+2.5V

225Ω

+3.3V

317

5pF

Q

5pF

351

225Ω

Figure 4

Figure 2

LOADDERATINGCURVES

Micron 256K x 18, 128K x 32, and 128K x 36 SyncBurst

SRAM timing is dependent upon the capacitive load-

ing on the outputs.

Consult the factory for copies of I/O current versus

voltage curves.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

19

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

SNOOZEMODE

SNOOZE MODE is a low-current, “power-down”

mode in which the device is deselected and current is

reduced to I^SB2Z. The duration of SNOOZE MODE is

dictated by the length of time ZZ is in a HIGH state.

After the device enters SNOOZE MODE, all inputs ex-

cept ZZ become gated inputs and are ignored.

ZZ is an asynchronous, active HIGH input that

causes the device to enter SNOOZE MODE. When ZZ

becomes a logic HIGH, I^SB2Z is guaranteed after the

t

setup time ZZ is met. Any READ or WRITE operation

pending when the device enters SNOOZE MODE is not

guaranteed to complete successfully. Therefore,

SNOOZE MODE must not be initiated until valid pend-

ing operations are completed.

SNOOZEMODEELECTRICALCHARACTERISTICS

DESCRIPTION

CONDITIONS

SYMBOL

ISB2Z

^tZZ

^tRZZ

^tZZI

^tRZZI

MIN

MAX

10

^tKC

UNITS NOTES

Current during SNOOZE MODE

ZZ active to input ignored

ZZ inactive to input sampled

ZZ active to snooze current

ZZ inactive to exit snooze current

ZZ ≥ VIH

mA

ns

1

^tKC

0

^tKC

NOTE: 1. This parameter is sampled.

SNOOZEMODEWAVEFORM

CLK

t

ZZ

t

RZZ

ZZ

t

ZZI

I

SUPPLY

I

ISB2Z

t

RZZI

ALL INPUTS

(except ZZ)

DESELECT or READ Only

Outputs (Q)

High-Z

DON’T CARE

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

20

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

3

READTIMING

t

KC

CLK

t

KL

KH

t

ADSH

ADSS

ADSP#

ADSC#

t

ADSH

ADSS

Deselect Cycle

(Note 4)

t

AH

AS

A1

A2

ADDRESS

t

WH

WS

BWE#, GW#,

BWa#-BWd#

t

CEH

CES

CE#

(NOTE 2)

t

AAH

AAS

ADV#

OE#

ADV# suspends burst.

t

KQ

t

OEQ

OELZ

t

OEHZ

KQHZ

t

KQX

t

KQLZ

Q(A2)

Q(A2 + 1)

(NOTE 1)

Q(A2 + 2)

Q(A2 + 3)

Q(A2)

Q(A2 + 1)

Q(A2 + 2)

Q(A1)

Q

High-Z

t

KQ

Burst wraps around

to its initial state.

DON’T CARE

Single READ

BURST

READ

UNDEFINED

READ TIMING PARAMETERS

-6.8

-7.5

-8.5

-10

-6.8

-7.5

-8.5

-10

SYMBOL

MIN MAX MIN MAX MIN MAX MIN MAX UNITS

SYMBOL

MIN MAX MIN MAX MIN MAX MIN MAX UNITS

t

KC

7.5

8.8

10

15

ns

MHz

ns

AS

1.5

0.5

1.5

0.5

1.8

0.5

2.0

0.5

ns

f

t

KF

133

6.8

113

7.5

100

8.5

66

10

ADSS

t

KH

2.5

3.0

4.0

AAS

t

KL

ns

WS

t

KQ

ns

CES

t

KQX

1.5

3.0

ns

AH

t

KQLZ

ns

ADSH

t

KQHZ

3.5

4.2

5.0

ns

AAH

t

OEQ

ns

WH

t

OELZ

0

ns

CEH

t

OEHZ

3.5

4.2

5.0

ns

NOTE: 1. Q(A2) refers to output from address A2. Q(A2 + 1) refers to output from the next internal burst address following A2.

2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE#

is HIGH, CE2# is HIGH and CE2 is LOW.

3. Timing is shown assuming that the device was not enabled before entering into this sequence.

t

4. Outputs are disabled KQHZ after deselect.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

21

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

WRITE TIMING

t

KC

CLK

t

KL

KH

t

ADSH

ADSS

ADSP#

ADSC# extends burst.

t

ADSH

ADSS

ADSH

ADSS

ADSC#

t

AH

AS

A1

A2

A3

ADDRESS

BYTE WRITE signals are

ignored when ADSP# is LOW.

t

WS

t

WH

BWE#,

BWa#-BWd#

t

WH

(NOTE 5)

WS

GW#

t

CEH

CES

CE#

(NOTE 2)

t

AAS

t

AAH

ADV#

OE#

ADV# suspends burst.

(NOTE 4)

(NOTE 3)

t

DH

DS

D

Q

D(A2)

D(A2 + 1)

(NOTE 1)

D(A2 + 1)

D(A2 + 2)

D(A2 + 3)

D(A3)

D(A3 + 1)

D(A3 + 2)

D(A1)

High-Z

t

OEHZ

BURST READ

Single WRITE

BURST WRITE

Extended BURST WRITE

DON’T CARE

WRITE TIMING PARAMETERS

-6.8

-7.5

-8.5

-10

-6.8

-7.5

-8.5

-10

SYMBOL

MIN MAX MIN MAX MIN MAX MIN MAX UNITS

SYMBOL

MIN MAX MIN MAX MIN MAX MIN MAX UNITS

t

KC

7.5

8.8

10

15

ns

MHz

ns

DS

1.5

0.5

1.5

0.5

1.8

0.5

2.0

0.5

ns

f

t

KF

133

3.5

113

4.2

100

5.0

66

CES

t

KH

2.5

3.0

4.0

AH

t

KL

ns

ADSH

t

OEHZ

5.0

ns

AAH

t

AS

1.5

1.8

2.0

ns

WH

t

ADSS

ns

DH

t

AAS

ns

CEH

t

WS

ns

NOTE: 1. D(A2) refers to output from address A2. D(A2 + 1) refers to output from the next internal burst address following A2.

2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE#

is HIGH, CE2# is HIGH and CE2 is LOW.

3. OE# must be HIGH before the input data setup and held HIGH throughout the data hold time. This prevents input/output

data contention for the time period prior to the byte write enable inputs being sampled.

4. ADV# must be HIGH to permit a WRITE to the loaded address.

5. Full-width WRITE can be initiated by GW# LOW; or GW# HIGH and BWE#, BWa# and BWb# LOW for x18 device; or GW#

HIGH and BWE#, BWa#-BWd# LOW for x32 and x36 devices.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

22

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

6

READ/WRITETIMING

t

KC

CLK

t

KL

KH

t

ADSH

ADSS

ADSP#

ADSC#

t

AH

AS

A1

A2

A3

A4

A5

A6

ADDRESS

t

WH

WS

BWE#,

BWa#-BWd#

(NOTE 4)

t

CEH

CES

CE#

(NOTE 2)

ADV#

OE#

t

DH

DS

t

OELZ

t

D

Q

High-Z

D(A3)

D(A5)

D(A6)

t

OEHZ

KQ

(NOTE 1)

Q(A4+1)

Q(A1)

Q(A2)

Q(A4)

Q(A4+2)

Q(A4+3)

Back-to-Back

WRITEs

Back-to-Back READs

(NOTE 5)

Single WRITE

BURST READ

DON’T CARE

UNDEFINED

READ/WRITE TIMING PARAMETERS

-6.8

-7.5

-8.5

-10

-6.8

-7.5

-8.5

-10

SYMBOL

MIN MAX MIN MAX MIN MAX MIN MAX UNITS

SYMBOL

MIN MAX MIN MAX MIN MAX MIN MAX UNITS

t

KC

7.5

8.8

10

15

ns

MHz

ns

WS

1.5

0.5

1.5

0.5

1.8

0.5

2.0

0.5

ns

f

t

KF

133

113

100

66

DS

t

KH

2.5

3.0

4.0

CES

t

KL

ns

AH

t

KQ

6.8

3.5

7.5

4.2

8.5

5.0

10

ns

ADSH

t

OELZ

0

ns

WH

t

OEHZ

5.0

ns

DH

t

AS

1.5

1.8

2.0

ns

CEH

t

ADSS

ns

NOTE: 1. Q(A4) refers to output from address A4. Q(A4 + 1) refers to output from the next internal burst address following A4.

2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE#

is HIGH, CE2# is HIGH and CE2 is LOW.

3. The data bus (Q) remains in High-Z following a WRITE cycle unless an ADSP#, ADSC# or ADV# cycle is performed.

4. GW# is HIGH.

5. Back-to-back READs may be controlled by either ADSP# or ADSC#.

6. Timing is shown assuming that the device was not enabled before entering into this sequence.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

23

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

100-PINPLASTICTQFP(JEDECLQFP)

+0.10

-0.20

22.10

20.10 0.10

0.65 TYP

0.32

+0.06

-0.10

0.625

SEE DETAIL A

14.00 0.10

16.00 0.20

PIN #1 ID

+0.03

-0.02

0.15

1.40 0.05

GAGE PLANE

0.60 0.15

1.60 MAX

+0.10

-0.05

0.10

1.00 TYP

0.25

DETAIL A

MAX

MIN

NOTE: 1. All dimensions in millimeters

or typical where noted.

2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

24

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

165-PINFBGA

0.85 0.075

0.12

C

SEATING PLANE

C

BALL A11

165X Ø 0.45

10.00

SOLDER BALL DIAMETER REFERS

TO POST REFLOW CONDITION. THE

PRE-REFLOW DIAMETER IS Ø 0.40

BALL A1

PIN A1 ID

1.20 MAX

1.00

TYP

PIN A1 ID

7.50 0.05

14.00

15.00 0.10

7.00 0.05

1.00

TYP

MOLD COMPOUND: EPOXY NOVOLAC

SUBSTRATE: PLASTIC LAMINATE

6.50 0.05

5.00 0.05

13.00 0.10

SOLDER BALL MATERIAL:

EUTECTIC 62% Sn, 36% Pb, 2% Ag

SOLDER BALL PAD: Ø .33mm

MAX

MIN

NOTE: 1. All dimensions in millimeters

or typical where noted.

DATASHEETDESIGNATIONS

No Marking: This data sheet contains minimum and maximum limits specified over the complete power supply

and temperature range for production devices. Although considered final, these specifications are

subject to change, as further product development and data characterization sometimes occur.

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900

E-mail:prodmktg@micron.com,Internet:http://www.micronsemi.com,CustomerCommentLine:800-932-4992

Micron, the Micron logo, M logo, and SyncBurst are trademarks and/or service marks of Micron Technology, Inc.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

25

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

REVISIONHISTORY

Updated package drawings ................................................................................................................................... January 9/03

Removed "Preliminary Package Data" from front page .............................................................................. February 22/02

Removed 119-pin PBGA package and references ........................................................................................ February 14/02

Removed note "Not Recommended for New Designs," Rev. 6/01 ...................................................................... June 7/01

Added Industrial Temperature note and references, Rev. 3/01, FINAL ......................................................... March 6/01

Added 119-pin PBGA package, Rev. 1/01, FINAL ........................................................................................... January 10/01

Removed FBGA Part Marking Guide, REV 8/00-A, FINAL .............................................................................. August 22/00

Changed FBGA capacitance values, REV 8/00, FINAL ....................................................................................... August 7/00

C^I; TYP 2.5pF from 4pF; MAX. 3.5pF from 5pF

CO; TYP 4pF from 6pF; MAX. 5pF from 7pF

CCK; TYP 2.5pF from 5pF; MAX. 3.5pF from 6pF

Added FBGA Part Marking Guide, Rev. 7/00, Preliminary ................................................................................... July 17/00

Added revision history

Removed industrial temperature references

Added 165-pin FBGA package, Rev. 6/00, Preliminary ........................................................................................ May 23/00

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

26


型号：	MT58L256L18F1F-8.5
厂家：	CYPRESS
描述：	Cache SRAM, 256KX18, 8.5ns, CMOS, PBGA165, FBGA-165 静态存储器
文件：	总26页 (文件大小：447K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MT58L256L18F1F-8.5 [CYPRESS]

相关型号：

MT58L256L18F1F-8.5IT

MT58L256L18F1T-10

MT58L256L18F1T-6.8

MT58L256L18F1T-7.5

MT58L256L18F1T-7.5IT

MT58L256L18F1T-8.5IT

MT58L256L18P1B-10

MT58L256L18P1B-10IT

MT58L256L18P1B-4

MT58L256L18P1B-4.4

MT58L256L18P1B-4.4IT

MT58L256L18P1B-5IT