WB1220X-TR [CYPRESS]
PLL Frequency Synthesizer, PDSO20, 0.173 INCH, MO-153, TSSOP-20;型号: | WB1220X-TR |
厂家: | CYPRESS |
描述: | PLL Frequency Synthesizer, PDSO20, 0.173 INCH, MO-153, TSSOP-20 光电二极管 |
文件: | 总9页 (文件大小:144K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
WB1220
Serial Input PLL with 2.0-GHz Prescaler
Features
Applications
• Operating voltage 2.7V to 5.5V
• Wireless LAN
• Operating frequency: up to 2.0 GHz with prescaler
ratios of 64/65 and 128/129
• Lock detect feature
• Wireless communication handsets
• Base Stations
• Microcells
• Power-down mode
• 20-pin TSSOP (Thin Shrink Small Outline Package)
WB1220 PLL Block Diagram
VCC (5)
VP (4)
GND (7)
(6)
DO
fp
Prescaler
64/65 or
128/129
(10)
Phase
Detector
Charge
Pump
Binary 7-Bit
Swallow Counter
Binary 11-Bit
Programmable Counter
FIN
(16)
BISW
(15)
FC
(20)
(18)
r
18-Bit
Latch
p
fr
(8)
(1)
(3)
OSC_IN
LD
14-Bit
Reference Counter
OSC_OUT
Latch
Selector
15-Bit
Latch
(14)
(13)
LE
Divider
(17)
Output
(fr/fp)
MUX
FOUT
DATA
Cntrl 19-Bit
Shift
Reg
(11)
(19)
CLOCK
PWDN
Pin Configuration
OSC_IN
NC
1
2
20
19
18
17
16
15
14
13
12
11
r
PWDN
OSC_OUT
VP
3
p
4
Fout
VCC
5
BISW
FC
DO
6
GND
LD
7
LE
8
DATA
NC
NC
9
FIN
10
CLOCK
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
February 2, 2000, rev. *A
WB1220
R4
R5
Q1
(1)
(2)
(3)
(20)
(19)
(18)
R6
Q2
1000p
Crystal
Osc.
Input
OSCIN
r
NC
PWDN
R7
OSCOUT
p
Q4
100p
Q3
0.1µ
(4)
(5)
(6)
(7)
(8)
(9)
(17)
(16)
(15)
(14)
(13)
(12)
VP
FOUT
R8
R9
Vp
VP
0.1µ
VCC
BISW
FC
VCC
100p
DO
C1
C2 R2
C3
GND
LD
LE
R3
DATA
NC
VCC
VP
100k
NC
MMBT200
LD
33k
Lock
Detect
0.01 µF
10k
(10)
(11)
18Ω
FIN
CLOCK
18Ω
18Ω
100 pF
50Ω
RFOUT
From
Controller
Figure 1. Application Diagram Example - WB1220 2.0-GHz PLL
2
WB1220
Pin Definitions
Pin
No.
Pin
Pin Name
OSC_IN
NC
Type
Pin Description
1
2
3
4
5
I
Oscillator Input: This input has a V /2 threshold and CMOS logic level sensitivity.
CC
No Connect
OSC_OUT
O
P
P
Oscillator Output
V
V
Charge Pump Rail Voltage: This supply for charge pump. Must be > V
.
CC
P
Power Supply Connection for PLL: When power is removed from V all latched
CC
CC
data is lost.
D
6
O
Charge Pump Output: The phase detector gain is I /2π. Sense polarity can be re-
O
P
versed by setting FC LOW (pin 15).
GND
LD
7
8
G
O
Analog and Digital Ground Connection: This pin must be grounded.
Lock Detect Pin: This output is HIGH with narrow LOW pulses when the loop is locked.
No Connect
NC
9
F
10
11
I
I
Input to Prescaler: Maximum frequency 2.0 GHz.
IN
CLOCK
Data Clock Input: One bit of data is loaded into the Shift Register on the rising edge
of this signal.
NC
12
13
14
No Connect
DATA
LE
I
I
Serial Data Input
Load Enable: On the rising edge of this signal, the data stored in the Shift Register is
latched into the counters and configuration controls.
F
15
I
Phase Sense Control for Phase Detector with Internal Pull-up: When pulled LOW,
C
the polarity of the Phase Detector is reversed.
BISW
16
17
18
19
O
O
O
I
Analog Switch Output: Connects to output of charge pump when LE is HIGH.
Monitor Point for Phase Detector Input
F
OUT
P
External Charge Pump Output: Open drain N-Channel FET, pull-up resistor required.
PWDN
Power Down Pin with Internal Pull-up: When pin is HIGH, device is in normal state.
When pin is LOW, device is in power-down mode. When device enters power-down
mode the charge pump is in the three-state condition.
20
O
External Change Pump: (CMOS logic output).
R
3
WB1220
only. Operation of the device at these or any other conditions
above those specified in the operating sections of this specifi-
cation is not implied. Maximum conditions for extended peri-
ods may affect reliability.
Absolute Maximum Ratings
Stresses greater than those listed in this table may cause per-
manent damage to the device. These represent a stress rating
Parameter
or V
Description
Power Supply Voltage
Rating
Unit
V
V
–0.5 to +6.5
CC
P
V
Output Voltage
–0.5 to V +0.5
V
OUT
OUT
CC
I
Output Current
±15
+260
mA
°C
°C
T
T
Lead Temperature
Storage Temperature
L
–55 to +150
STG
Always turn off power before adding or removing devices from
system.
Handling Precautions
Devices should be transported and stored in antistatic con-
tainers.
Protect leads with a conductive sheet when handling or trans-
porting PC boards with devices.
These devices are static sensitive. Ensure that equipment and
personnel contacting the devices are properly grounded.
If devices are removed from the moisture protective bags for
more than 36 hours, they should be baked at 85°C in a mois-
ture free environment for 24 hours prior to assembly in less
than 24 hours.
Cover workbenches with grounded conductive mats.
Recommended Operating Conditions
Parameter
Description
Power Supply Voltage
Test Condition
Rating
Unit
V
V
2.7 to 5.5
CC
P
V
Charge Pump Voltage
Operating Temperature
V
to +5.5
V
CC
T
Ambient air at 0 CFM flow
–40 to +85
°C
A
4
WB1220
Electrical Characteristics: V = 3.0V, V = 3.0V, T = –40°C to +85°C, Unless otherwise specified
CC
P
A
Parameter
Description
Power Supply Current
Power-down Current
Test Condition
Pin
Min.
Typ.
Max.
Unit
mA
I
V
V
7
6
CC
PD
CC
µA
I
Power-down, V = 3.0V
100
CC
CC
IN
F
Maximum Operating
Frequency
F
2.0
GHz
IN
F
Oscillator Input Frequency No load on OSC_OUT
OSC_IN
60
25
4
MHz
MHz
dBm
dBm
OSC
PF
Input Sensitivity
V
V
= 2.7V
= 5.5V
F
IN
–15
–10
0.5
IN
CC
CC
4
V
Oscillator Input Sensitivity
Oscillator Input Current
High Level Input Voltage
Low Level Input Voltage
High Level Input Current
Low Level Input Current
High Level Output Voltage
Low Level Output Voltage
OSC_IN
V
P–P
OSC
I , I
–100
100
µA
V
IH IL
V
= 5.0V
V
DATA,
CLOCK,
LE
V
* 0.8
CC
CC
IH
IL
V
V
* 0.3
V
CC
µA
µA
V
I
I
–10
–10
2.2
1
1
10
10
IH
IL
V
F /LD
O
OH
V
0.4
V
OL
ID
ID , Source Current
V = 3.0V, VD = V /2
D
D
–3.2
–3.8
mA
mA
O(SO)
OH(SI)
O
P
O
P
O
O
V = 5.0V, VD = V /2
P
O
P
ID
ID High, Sink Current
V = 3.0V, VD = V /2
3.2
3.8
mA
mA
O
P
O
P
V = 5.0V, VD = V /2
P
O
P
∆ID
ID Charge Pump Sink and VD = V /2
5
%
O
O
O
P
Source Mismatch
[IID
I – IID
I]/
O(SI)
O(SO)
[1/2*{IID
]I+IID
I}]*100%
O(SI)
O(SO)
[1]
%
ID vs T
Charge Pump Current
–40°C<T<85°C, V = V /2
5
O
DO
P
Variation vs. Temperature
nA
ID
Charge Pump High-
Impedance Leakage
Current
±2.5
O-tri
Note:
1. IDOVS T; Charge pump current variation vs. temperature.
[IIDO(SI)@TI – IIDO(SI)@25° CI]/IIDO(SI)@25°CI * 100% and
[IIDO(SO)@TI – IIDO(SO)@25°CI]/IIDO(SO)@25°CI *100%.
5
WB1220
Timing Waveforms
Phase Characteristics
For normal operation, the FC pin is used to select the output polarity of the
phase detector. Both the internal and any external charge pump are affected.
(1)
Depending upon VCO characteristics, FC pin should be set accordingly:
When VCO characteristics are like (1), FC should be set HIGH or OPEN
CIRCUIT:
VCO
Output
Frequency
When VCO characteristics are like (2), FC should be set LOW.
When FC is set HIGH or OPEN CIRCUIT, F pin is set to the reference
out
divider output, F . When FC is set LOW, F pin is set to the programmable
r
out
divider output F .
p
(2)
VCO Input Voltage
Phase Comparator Sense
Phase Detector Output Waveform
FR
FP
tw
tw
LD
D
Charge Pump Output Current Waveform
O
FR
FP
tw
tw
Do
IDO
Three-state
6
WB1220
Timing Waveforms (continued)
Serial Data Input Timing Waveform
[2, 3, 4, 5]
//
//
//
//
B11 = MSB
B10
B1
A7
A1
CNT = LSB
DATA
CLOCK
//
//
//
t3
t4
t5
t1
t2
LE
//
Serial Data Input
Data is input serially using the DATA, CLOCK, and LE pins.
Two control bits direct data into the locations given in Table 1.
Table 1. Control Configuration
CNT
Function
1
0
Reference Counter: R = 3 to 16383, set prescaler ratio PRE =0:128/129, PRE=1:64/65
Program Counter: A = 0 to 127, B = 3 to 2047
[6]
Table 2. Shift Register Configuration
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Reference Counter and Configuration Bits
CNT R1
R2
R3
R4
R5
R6
R7
R8
R9 R10 R11 R12 R13 R14 PRE
Programmable Counter Bits
CNT A1
A2
A3
A4
A5
A6
A7
B1
B2
B3
B4
B5
B6
B7
B8
B9 B10 B11
Bit(s) Name
CNT
Function
Control Bit: Directs programming data to reference or programmable counters.
[7]
R1–R14
PRE
Reference Counter Setting Bits: 14 bits, R = 3 to 16383.
Prescaler Divide Bit: LOW = 128/129 and HIGH = 64/65.
Swallow Counter Divide Ratio: A = 0 to 127.
A1–A7
B1–B11
Notes:
[7]
Programmable Counter Divide Ratio: B = 3 to 2047.
2. t1–t5 = 50 µs > t > 0.5 µs.
3. CLOCK may remain HIGH after latching in data.
4. DATA is shifted in with the MSB first.
5. For DATA definitions, refer to Table 2.
6. The MSB is loaded in first.
7. Low count ratios may violate frequency limits of the phase detector.
7
WB1220
[8]
Table 3. 7-Bit Swallow Counter (A) Truth Table
Divide Ratio A
A7
0
A6
0
A5
0
A4
0
A3
0
A2
0
A1
0
0
1
0
0
0
0
0
0
1
:::
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
0
126
127
1
1
1
1
1
1
1
[9]
Table 4. 11-Bit Programmable Counter (B) Truth Table
Divide Ratio B
B11
0
B10
0
B9
0
B8
0
B7
0
B6
0
B5
0
B4
0
B3
B2
B1
1
3
4
0
1
1
0
0
0
0
0
0
0
0
0
0
:::
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
0
2046
2047
1
1
1
1
1
1
1
1
1
1
1
[9]
Table 5. 14-Bit Programmable Reference Counter Truth Table
Divide Ratio R
R14
0
R13
0
R12
0
R11
0
R10
0
R9
0
R8
0
R7
0
R6
R5
0
R4
0
R3
0
R2
1
R1
3
4
0
0
1
0
0
0
0
0
0
0
0
0
0
0
1
0
:::
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
1
:::
0
16382
16383
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Ordering Information[10]
Package
Ordering Code
WB1220
Name
Package Type
TR
X
20-pin TSSOP (0.173” wide) Tape and Reel Option
Notes:
8. B is greater than or equal to A.
9. Divide ratio less than 3 is prohibited. The divide ratio can be calculated using the following equation:
fvco = {(P * B) + A} * fosc / R where (A < B)
fvco: Output frequency of the external VCO.
fosc: The crystal reference oscillator frequency.
A: Preset divide ratio of the 7-bit swallow counter.
B: Preset ratio of the 11-bit programmable counter (3 to 2047).
P: Preset divide ratio of the dual modulus prescaler.
R: Preset ratio of the 15-bit programmable reference counter (3 to 16383).
The divide ratio N = (P * B) + A.
10. Operating temperature range: –40°C to +85°C.
Document #: 38-00864-A
8
WB1220
Package Diagram
20-Pin Thin Shrink Small Outline Package (TSSOP, 0.173” wide)
Physical Dimensions In Millimeters
20 Lead (0.173" Wide) TSSOP Package Order Number X
20" clear antistatic tubes, 76 units/tube
JEDEC Outline MO-153
© Cypress Semiconductor Corporation, 2000. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
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