BTA1577S3 [CYSTEKEC]
General Purpose PNP Epitaxial Planar Transistor; 通用PNP外延平面晶体管
| 型号： | BTA1577S3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | General Purpose PNP Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C305S3
Issued Date : 2002.06.11
Revised Date : 2002.11.01
Page No. : 1/4
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTA1577S3
Description
• The BTA1577S3 is designed for use in driver stage of AF amplifier and general purpose
amplification.
• Large IC . IC Max .= -0.6A
• Low Vce(set). Edeal for low-Voltage operation
TYP.Vce(set) =0.2V at IC/IB = 300mA / 30mA
• Complementary to BTC4097S3
.
Equivalent Circuit
BTA1577S3
SOT-323
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
-40
-32
V
V
-5
V
-0.6
A
Power Dissipation
Pd
225
mW
°C
°C
Junction Temperature
Storage Temperature
Tj
Tstg
150
-55~+150
BTA1577S3
CYStek Product Specification
Spec. No. : C305S3
Issued Date : 2002.06.11
Revised Date : 2002.11.01
Page No. : 2/4
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
Min. Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-32
-5
-
-101
-62
-
V
IC=-10uA
IC=-1mA
BVCEO
BVEBO
ICBO
-
V
-8.9
-0.03
0
-
V
IE=-100uA
VCB=-20V
VEB=-4V
-1.0
-1.0
-0.5
390
-
uA
uA
V
IEBO
-
*VCE(sat)
*hFE
-
-0.25
212
200
7
IC=-100mA, IB=-10mA
VCE=-3V, IC=-100mA
82
-
fT
Cob
MHz
pF
VCE=-10V, IC=-1mA, f=100MHz
VCB=-10V, f=1MHz
-
-
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
P
Q
R
Range
82~180
120~270
180~390
BTA1577S3
CYStek Product Specification
Spec. No. : C305S3
Issued Date : 2002.06.11
Revised Date : 2002.11.01
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
100
10
HFE@VCE=3V
VCE(SAT)@IC=10IB
100
10
0.1
1
10
100
1000
1
10
100
1000
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
1000
1
FT@VCE=5V
VBE(SAT)@IC=10IB
100
0.1
1
0.1
1
10
100
1000
10
100
Collector Current---IC(mA)
Collector Current---IC(mA)
PD - Ta
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTA1577S3
CYStek Product Specification
Spec. No. : C305S3
Issued Date : 2002.06.11
Revised Date : 2002.11.01
Page No. : 4/4
CYStech Electronics Corp.
SOT-323 Dimension
3
Marking:
A
Q
C
A1
Lp
detail Z
2T
1
2
bp
e1
W
B
e
A
E
Z
D
3-Lead SOT-323 Pastic
Surface Mounted Package
CYStek Package Code: S3
θ
v
A
He
Style: Pin 1.Base 2.Emitter 3.Collector
mm
2
0
1
scale
*: Typical
Inches
Min. Max.
Millimeters
Inches
Millimeters
DIM
DIM
Min.
0.80
0.00
0.30
0.10
1.80
1.15
1.3
Max.
1.10
0.10
0.40
0.25
2.20
1.35
-
Min.
0.0256
Max.
-
Min.
0.65
2.00
0.15
0.13
0.2
Max.
-
A
A1
bp
C
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
e1
He
Lp
Q
0.0787 0.0886
0.0059 0.0177
0.0051 0.0091
2.25
0.45
0.23
-
D
v
0.0079
0.0079
-
-
-
E
w
0.2
-
0°
e
0.0512
-
-
θ
10°
Notes: 1.Dimension and tolerance based on our Spec. dated Feb. 27.002.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1577S3
CYStek Product Specification
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