BTB1580SN3 [CYSTEKEC]
PNP Epitaxial Planar Transistor;
| 型号： | BTB1580SN3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | PNP Epitaxial Planar Transistor |
| 文件： | 总7页 (文件大小：452K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C655N3
Issued Date : 2017.11.27
Revised Date :
CYStech Electronics Corp.
Page No. : 1/7
PNP Epitaxial Planar Transistor
BTB1580SN3
Description
The BTB1580SN3 is designed for use in general purpose amplifier and low speed switching application.
Pb-free lead plating package process is adopted.
Equivalent Circuit
Outline
BTB1580SM3
SOT-23
C
≒4K
B：Base
E
C：Collector
E：Emitter
B
Ordering Information
Device
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
BTB1580SN3-0-T1-G
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T1 :3000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTB1580SN3
CYStek Product Specification
Spec. No. : C655N3
Issued Date : 2017.11.27
Revised Date :
CYStech Electronics Corp.
Page No. : 2/7
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
IC
ICP
RθJA
RθJC
-120
-120
-5
-2
A
C/W
W
Collector Current (Pulse)
-4 (Note 1)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Power Dissipation @ TA=25°C
500
100
0.3
PD
Power Dissipation @ TC=25°C
Opeearting Junction Temperature Range
Storage Temperature Range
1.5
-55~+175
-55~+175
Tj
Tstg
C
≦
≦
Note : 1. Single Pulse Pw 350μs, Duty 2%.
Characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-1mA, IB=0
IC=-100μA, IE=0
VCB=-120V, IE=0
VCE=-120V, IB=0
VEB=-5V, IC=0
IC=-2A, IB=-2mA
VCE=-4V, IC=-2A
VCE=-4V, IC=-1A
VCE=-4V, IC=-2A
BVCEO
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
-120
-120
-
-
-
-
-
-
-
-
-
-
-
-
V
V
nA
μA
mA
V
V
-
-
pF
-100
-1
-2
-1.8
-2.2
-
1000
1000
-
-
-
-
200
VCB=-10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended Soldering Footprint
BTB1580SN3
CYStek Product Specification
Spec. No. : C655N3
Issued Date : 2017.11.27
Revised Date :
CYStech Electronics Corp.
Page No. : 3/7
Typical Characteristics
Current Gain vs Collector Current
Current Gain vs Collector Current
10000
1000
100
10
10000
25°C
85°C
25°C
140°C
85°C
1000
140°C
100
0°C
0°C
10
1
-40°
-40°
VCE=-3V
VCE=-4V
1
1
10
100
1000
10000
1
10
100
1000
10000
-IC, Collector Current(mA)
-IC, Collector Current(mA)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
10000
1000
100
0°C
-40°C
0°C
-40°C
1000
140°
25°C
85°
85°C
140°C
25°C
VCESAT@IC=500IB
VCESAT@IC=250IB
100
10
100
1000
10000
10
100
1000
10000
-IC, Collector Current(mA)
-IC, Collector Current(mA)
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
100
10000
1000
100
-40°C
-40°C
0°C
0°C
25°C
25°C
85°C
85°C
140°C
VBESAT@IC=250IB
VBEON@VCE=-4V
140°C
10
100
1000
10000
1
10
100
1000
10000
-IC, Collector Current(mA)
-IC, Collector Current(mA)
BTB1580SN3
CYStek Product Specification
Spec. No. : C655N3
Issued Date : 2017.11.27
Revised Date :
CYStech Electronics Corp.
Page No. : 4/7
Typical Characteristics(Cont.)
Capacitance vs Reverse-Biased Voltage
Built-in Diode Characteristics
100
10000
1000
100
Cib
-40°C
0°C
25°C
85°C
140°C
Cob
10
0.1
1
10
100
1
10
100
1000
10000
VR, Reverse-Biased Voltage(V)
-IF, Forward Current(mA)
Power Derating Curves
Power Derating Curve
0.35
0.3
1.6
1.4
1.2
1
0.25
0.2
0.8
0.6
0.4
0.2
0
0.15
0.1
0.05
0
0
25
50
75 100 125 150 175 200
0
25
50
75 100 125 150 175 200
TA, Ambient Temperature(℃)
TC, Case Temeprature(℃)
BTB1580SN3
CYStek Product Specification
Spec. No. : C655N3
Issued Date : 2017.11.27
Revised Date :
CYStech Electronics Corp.
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BTB1580SN3
CYStek Product Specification
Spec. No. : C655N3
Issued Date : 2017.11.27
Revised Date :
CYStech Electronics Corp.
Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTB1580SN3
CYStek Product Specification
Spec. No. : C655N3
Issued Date : 2017.11.27
Revised Date :
CYStech Electronics Corp.
Page No. : 7/7
SOT-23 Dimension
Marking:
Device Code
BN
Date Code: Year+Month
Year: 7→2017, 8→2018
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
Inches
DIM
Millimeters
Inches
Min. Max.
Millimeters
DIM
Min.
Max.
Min.
Max.
3.04
1.70
1.15
0.50
2.00
0.10
Min.
Max.
0.20
0.72
1.15
2.95
0.65
0.60
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0669
0.0335 0.0453
0.0118 0.0197
0.0669 0.0787
0.0000 0.0040
2.80
1.20
0.89
0.30
1.70
0.00
J
K
L
S
V
0.0032 0.0079
0.0197 0.0283
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0236
0.08
0.50
0.85
2.10
0.25
0.30
L1
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
Lead : Pure tin plated.
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1580SN3
CYStek Product Specification
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