BTB589N3 [CYSTEKEC]

Low Saturation PNP Epitaxial Planar Transistor; 低饱和PNP外延平面晶体管
BTB589N3
型号: BTB589N3
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

Low Saturation PNP Epitaxial Planar Transistor
低饱和PNP外延平面晶体管

晶体 晶体管
文件: 总5页 (文件大小:264K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Spec. No. : C314N3  
Issued Date : 2005.04.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/ 5  
Low Saturation PNP Epitaxial Planar Transistor  
BTB589N3  
Description  
The BTB589N3 is designed with high current gain and low saturation voltage with collector current up  
to 1A continuous.  
Features  
Low VCE(SAT) , VCE(SAT)-0.3V (IC / IB=-1A/-100mA)  
Large collector current, IC=-1A  
Pb-free package  
Symbol  
Outline  
BTB589N3  
SOT-23  
BBase  
CCollector  
E
Emitter  
BTB589N3  
CYStek Product Specification  
Spec. No. : C314N3  
Issued Date : 2005.04.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/ 5  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Collector-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
-50  
V
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-32  
-5  
Collector Current (DC)  
Collector Current (Pulse)  
-1  
A
ICP  
-2  
310 (Note 1)  
500 (Note 2)  
403 (Note 1)  
250 (Note 2)  
-55~+150  
-55~+150  
Power Dissipation  
Pd  
mW  
Thermal Resistance, Junction to Ambient  
Junction Temperature  
RθJA  
°C/W  
Tj  
Tstg  
°C  
°C  
Storage Temperature  
Note: 1.Device mounted on FR-4 PCB with minimum pad  
2.Device mounted on FR-4 PCB with area of 4.5”×5”, mounting pad 0.02 in² of 2 oz copper  
Characteristics  
(Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICBO  
-40  
-
-
-
-
-
-
-
-
-
-
-
V
IC=-50µA  
IC=-1mA  
IE=-50µA  
VCB=-30V  
VEB=-4V  
-32  
-
V
-5  
-
-
V
-100  
-100  
-0.25  
-0.30  
-0.65  
-1.2  
-1.1  
420  
-
nA  
nA  
V
IEBO  
-
*VCE(sat)  
*VCE(sat)  
*VCE(sat)  
*VBE(sat)  
*VBE(on)  
1
2
3
-
IC=-500mA, IB=-50mA  
IC=-1A, IB=-100mA  
IC=-2A, IB=-200mA  
IC=-1A, IB=-100mA  
VCE=-2V, IC=-1A  
-
V
-
V
-
V
-
V
*hFE  
*hFE  
*hFE  
*hFE  
fT  
1
2
3
4
180  
100  
80  
-
-
-
VCE=-3V, IC=-100mA  
VCE=-2V, IC=-500mA  
VCE=-2V, IC=-1A  
-
-
-
-
-
30  
-
-
VCE=-2V, IC=-2A  
100  
-
200  
12  
-
MHz  
pF  
VCE=-5V, IC=-50mA, f=100MHz  
Cob  
25  
VCB=-10V, f=1MHz  
*Pulse Test: Pulse Width 380µs, Duty Cycle2%  
BTB589N3  
CYStek Product Specification  
Spec. No. : C314N3  
Issued Date : 2005.04.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/ 5  
Characteristic Curves  
Current Gain vs Collector Current  
Saturation Voltage vs Collector Current  
1000  
10000  
1000  
100  
VCE = 2V  
100  
VCE(SAT) @ IC=100IB  
VCE = 1V  
VCE(SAT) @ IC=10IB  
10  
10  
1
10  
100  
1000  
10000  
10000  
200  
1
10  
100  
1000  
10000  
Collector Current---IC(mA)  
Collector Current---IC(mA)  
Saturation Voltage vs Collector Current  
On Voltage vs Collector Current  
10000  
1000  
100  
1000  
VBE(SAT) @ IC=10IB  
VBE(ON) @ VCE=1V  
100  
1
10  
100  
1000  
1
10  
100  
1000  
10000  
Collector Current---IC(mA)  
Collector Current---IC(mA)  
Power Derating Curves  
500  
400  
300  
200  
100  
0
See Note 2 on page 1  
See Note 1 on page 1  
0
50  
100  
150  
Ambient Temperature---TA(℃)  
BTB589N3  
CYStek Product Specification  
Spec. No. : C314N3  
Issued Date : 2005.04.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 4/ 5  
Reel Dimension  
Carrier Tape Dimension  
BTB589N3  
CYStek Product Specification  
Spec. No. : C314N3  
Issued Date : 2005.04.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 5/ 5  
SOT-23 Dimension  
A
L
Marking:  
3
AH  
S
B
1
2
V
G
3-Lead SOT-23 Plastic  
Surface Mounted Package  
CYStek Package Code: N3  
C
Style: Pin 1.Base 2.Emitter 3.Collector  
D
K
H
J
*: Typical  
Millimeters  
Inches  
Millimeters  
Inches  
Min. Max.  
DIM  
DIM  
Min.  
Max.  
Min.  
Max.  
3.04  
1.60  
1.30  
0.50  
2.30  
0.10  
Min.  
Max.  
0.177  
0.67  
1.15  
2.75  
0.65  
A
B
C
D
G
H
0.1102 0.1204  
0.0472 0.0630  
0.0335 0.0512  
0.0118 0.0197  
0.0669 0.0910  
0.0005 0.0040  
2.80  
1.20  
0.89  
0.30  
1.70  
0.013  
J
K
L
0.0034 0.0070  
0.0128 0.0266  
0.0335 0.0453  
0.0830 0.1083  
0.0098 0.0256  
0.085  
0.32  
0.85  
2.10  
0.25  
S
V
Notes: 1.Controlling dimension: millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material:  
Lead: 42 Alloy ; solder plating  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
BTB589N3  
CYStek Product Specification  

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