BTC4620T3 [CYSTEKEC]
High Voltage NPN Epitaxial Planar Transistor; 高电压NPN外延平面晶体管
| 型号： | BTC4620T3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | High Voltage NPN Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C210T3
Issued Date : 2004.07.01
Revised Date : 2004.07.22
Page No. : 1/4
CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC4620T3
Features
• High breakdown voltage. (BVCEO =350V)
• Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.
• Complementary to BTA1776T3
Symbol
Outline
BTC4620T3
TO-126
B：Base
C：Collector
E：Emitter
E C B
Limit
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
350
350
5
V
V
V
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (TA=25℃)
100
200
1.2
mA
ICP
PD
W
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
7
150
-55~+150
Tj
Tstg
°C
°C
BTC4620T3
CYStek Product Specification
Spec. No. : C210T3
Issued Date : 2004.07.01
Revised Date : 2004.07.22
Page No. : 2/4
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
350
-
-
V
IC=50µA, IE=0
350
-
-
V
IC=1mA, IB=0
5
-
-
-
V
IE=50µA, IC=0
-
0.1
0.1
0.6
1
µA
µA
V
VCB=200V, IE=0
VEB=4V, IC=0
IEBO
-
-
*VCE(sat)
*VBE(sat)
hFE
fT
Cob
-
0.1
IC=20mA, IB=2mA
IC=20mA, IB=2mA
-
V
-
80
-
-
70
2.6
200
-
-
VCE=10V, IC=10mA
MHz
pF
VCE=30V, IC=10mA, f=10MHz
-
VCB=30V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
P
Q
Range
80~140
100~200
BTC4620T3
CYStek Product Specification
Spec. No. : C210T3
Issued Date : 2004.07.01
Revised Date : 2004.07.22
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
10000
1000
100
1000
100
VCE = 10V
VCE(SAT) @ IC = 20IB
VCE = 5V
10
VCE = 1V
VCE(SAT) @ IC = 10IB
10
1
1
10
Collector Current---IC(mA)
100
1
1
0
10
100
1000
1000
200
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Power Derating Curve
1.6
1.2
0.8
0.4
0
1000
VBE(SAT) @ IC =10IB
100
10
100
0
50
100
150
200
Collector Current---IC(mA)
Ambient Temperature---TA(℃)
Power Derating Curve
10
8
6
4
2
0
50
Case
100
150
Temperature---TC(℃)
BTC4620T3
CYStek Product Specification
Spec. No. : C210T3
Issued Date : 2004.07.01
Revised Date : 2004.07.22
Page No. : 4/4
CYStech Electronics Corp.
TO-126 Dimension
I
D
E
J
K
Marking:
A
B
M
α3
C4620
2
1
3
α4
G
C
Style: Pin 1.Emitter 2.Collector 3.Base
F
L
H
3-Lead TO-126 Plastic Package
CYStek Package Code: T3
α1
α2
*: Typical
Inches
Millimeters
Inches
Min.
Millimeters
DIM
DIM
Min.
Max.
*3°
Min.
-
Max.
*3°
Max.
0.0319
0.0520
0.1890
0.1050
0.0550
0.0550
*0.0217
0.1520
Min.
Max.
0.81
1.32
4.80
2.66
1.39
1.39
*0.55
3.86
-
F
G
H
I
0.0280
0.0480
0.1709
0.0950
0.0450
0.0450
-
0.71
1.22
4.34
2.41
1.14
1.14
-
α1
α2
α3
α4
A
-
-
*3°
*3°
-
-
*3°
*3°
*3°
-
-
*3°
0.1500
0.2752
0.5315
0.2854
0.0374
0.1539
0.2791
0.6102
0.3039
0.0413
3.81
6.99
13.50
7.52
0.95
3.91
7.09
15.50
7.72
1.05
J
B
K
L
C
D
M
0.1378
3.50
E
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4620T3
CYStek Product Specification
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