BTP2907AL3 [CYSTEKEC]
General Purpose PNP Epitaxial Planar Transistor; 通用PNP外延平面晶体管
| 型号： | BTP2907AL3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | General Purpose PNP Epitaxial Planar Transistor |
| 文件： | 总3页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C317L3-H
Issued Date : 2003.04.15
Revised Date :
CYStech Electronics Corp.
Page No. : 1/3
General Purpose PNP Epitaxial Planar Transistor
BTP2907AL3
Description
• The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the
SOT-223 package which is designed for medium power surface mount applications.
• Low VCE(sat)
• High switching speed.
• Complementary to BTN2222AL3
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
-60
-60
V
V
-5
V
-600
5
mA
W
°C
°C
Power Dissipation @TC=25℃
Pd
Junction Temperature
Storage Temperature
Tj
Tstg
150
-55~+150
Electrical Characteristics
(Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-60
-60
-5
-
-
-
V
IC=-10uA
*BVCEO
BVEBO
ICBO
-
-
V
IC=-10mA
-
-
V
IE=-10uA
-
-10
-50
-0.4
-1.6
-1.3
-2.6
-
nA
nA
V
VCB=-50V
ICEX
-
-
VCE=-30V, VBE(OFF)=-0.5V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-100uA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
*hFE
-
-0.2
-
-0.5
V
-
-
-
-
-
-
-
-
V
-
V
75
100
100
100
50
200
-
-
*hFE
-
-
*hFE
-
-
*hFE
300
-
-
*hFE
-
fT
-
MHz
pF
VCE=-20V, IC=-50mA, f=100MHz
Cob
-
8
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
BTP2907AL3
CYStek Product Specification
Spec. No. : C317L3-H
Issued Date : 2003.04.15
Revised Date :
CYStech Electronics Corp.
Page No. : 2/3
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
100
10
10
1
VCE=10V
VCE(sat)@IC=10IB
0.1
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
10
10
1
VCE(sat)@IC=20IB
VBE(sat)@IC=10IB
1
0.1
0.01
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curve
On Voltage vs Collector Current
6
5
4
3
2
1
0
1.2
1
VBE(on)@VCE=1V
0.8
0.6
0.4
0.1
1
10
100
1000
0
50
100
150
200
Case Temperature --- TC(
)
℃
Collector Current---IC(mA)
BTP2907AL3
CYStek Product Specification
Spec. No. : C317L3-H
Issued Date : 2003.04.15
Revised Date :
CYStech Electronics Corp.
Page No. : 3/3
SOT-223 Dimension
A
Marking:
2907A
B
C
1
2
F
3
D
E
Style: Pin 1.Base 2.Collector 3.Emitter
a1
H
I
G
3-Lead SOT-223 Plastic
Surface Mounted Package
CYStek Package Code: L3
a2
*: Typical
Millimeters
Inches
Millimeters
Inches
Min.
DIM
DIM
Min.
Max.
0.1220
0.2874
0.1457
0.0315
-
Min.
Max.
3.10
7.30
3.70
0.80
-
Max.
0.0709
0.0138
0.0039
-
Min.
1.40
0.25
0.02
*13o
0 o
Max.
1.80
0.35
0.10
-
A
B
C
D
E
F
0.1142
0.2638
0.1299
0.0236
*0.0906
0.2480
2.90
6.70
3.30
0.60
*2.30
6.30
G
H
0.0551
0.0098
0.0008
*13o
I
a1
a2
0 o
10 o
10 o
0.2638
6.70
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP2907AL3
CYStek Product Specification
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