BTPA92A3 [CYSTEKEC]
General Purpose PNP Epitaxial Planar Transistor; 通用PNP外延平面晶体管
| 型号： | BTPA92A3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | General Purpose PNP Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C308A3
Issued Date : 2003.06.27
Revised Date :
CYStech Electronics Corp.
Page No. : 1/4
General Purpose PNP Epitaxial Planar Transistor
BTPA92A3
Description
• High breakdown voltage. (BVCEO=-300V)
• Low collector output capacitance.
• Ideal for chroma circuit.
Symbol
Outline
BTPA92A3
TO-92
B：Base
C：Collector
E：Emitter
E B C
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
-300
-300
-5
V
V
V
Collector Current
-500
625
mA
mW
°C/W
°C
Power Dissipation
Pd
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
RθJA
Tj
Tstg
200
150
-55~+150
°C
BTPA92A3
CYStek Product Specification
Spec. No. : C308A3
Issued Date : 2003.06.27
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Characteristics
(Ta=25°C)
Symbol
Min. Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
-300
-300
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
IC=-100µA
-
-
V
IC=-1mA
V
IE=-100µA
-0.25
-0.1
-0.5
-0.9
-
270
-
-
6
µA
µA
V
VCB=-200V
IEBO
-
VEB=-3V
*VCE(sat)
*VBE(sat)
hFE 1
-
-
25
56
25
50
-
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
V
-
*hFE 2
*hFE 3
fT
-
-
MHz
pF
VCE=-20V, IC=-10mA, f=100MHz
VCB=-20V, f=1MHz
Cob
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 2
Rank
Range
K
P
Q
56~120
82~180
120~270
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
VCE(SAT)@IC=10IB
1000
100
10
10000
1000
100
HFE@VCE=10V
10
0.1
1
10
100
0.1
1
10
100
Collector Current---IC(mA)
Collector Current---IC(mA)
BTPA92A3
CYStek Product Specification
Spec. No. : C308A3
Issued Date : 2003.06.27
Revised Date :
CYStech Electronics Corp.
Page No. : 3/4
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
1000
1
VBE(SAT)@IC=10IB
FT@VCE=30V
100
0.1
0.1
1
10
100
1000
1
10
Collector Current---IC(mA)
100
Collector Current---IC(mA)
Power Derating Curve
700
600
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature ---Ta(℃ )
BTPA92A3
CYStek Product Specification
Spec. No. : C308A3
Issued Date : 2003.06.27
Revised Date :
CYStech Electronics Corp.
Page No. : 4/4
TO-92 Dimension
α2
α3
Marking:
A
B
1
2
3
A92
C
E
D
H
G
α1
Style: Pin 1.Emitter 2.Base 3.Collector
I
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Millimeters
Inches
Min. Max.
Millimeters
DIM
DIM
Min.
Max.
Min.
Max.
4.83
4.83
-
Min.
Max.
0.56
*2.54
*1.27
*5°
*2°
*2°
A
B
C
D
E
F
0.1704 0.1902
0.1704 0.1902
4.33
4.33
12.70
0.36
-
G
H
0.0142 0.0220
0.36
-
-
-
-
-
*0.1000
*0.0500
*5°
-
-
-
-
-
0.5000
-
I
0.0142 0.0220
*0.0500
0.1323 0.1480
0.56
*1.27
3.76
α1
α2
α3
-
*2°
3.36
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTPA92A3
CYStek Product Specification
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