CASD355SG [CYSTEKEC]
100V/100mA SURFACE MOUNT SWITCHING DIODE; 100V / 100毫安表面贴装开关二极管
| 型号： | CASD355SG |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | 100V/100mA SURFACE MOUNT SWITCHING DIODE |
| 文件： | 总3页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C332SG
Issued Date : 2004.03.26
Revised Date :
CYStech Electronics Corp.
Page No. : 1/3
100V/100mA SURFACE MOUNT SWITCHING DIODE
CASD355SG
Features:
● Small surface mounting type
● High reliability
● High speed(trr<4ns)
Mechanical data:
● Case: Molded plastic, JEDEC SOD-323
● Terminals : Solder plated, solderable per MIL-STD-750, method 2026.
● Polarity: Indicated by cathode band
● Mounting position: Any
● Weight: 0.000159 ounce, 0.0045 gram
Absolute Maximum Ratings(At Ta=25℃, unless otherwise noted)
Characteristics
Symbol
VRRM
Value
100
Unit
V
Repetitive Peak Reverse Voltage
Average Forward Current, VR=0
Peak Forward Surge Current, tp<1s
Power Dissipation
IFAV
IFSM
PD
100
500
350
175
mA
mA
mW
°C
Junction Temperature
Tj
Storage Temperature Range
Tstg
-55 to +175
°C
Electrical Characteristics ( At Ta=25°C, unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max
Unit
V
Forward Voltage
IF=10mA
VF
IR
-
-
-
-
-
-
1.2
100
50
30
-
VR=25V
-
-
nA
µA
µA
V
Reverse Current
VR=25V, Tj=150℃
VR=80V
IR=100µA, Tp/T=0.01, Tp=0.3ms
VR=0, f=1MHz, VHF=50mV
IF=10mA,VR=6V,IRR=0.1×IR, RL=100Ω
IR
IR
-
Breakdown Voltage
Diode Capacitance
V(BR)
CD
trr
100
4
pF
ns
Reverse Recovery Time
4
CASD355SG
CYStek Product Specification
Spec. No. : C332SG
Issued Date : 2004.03.26
Revised Date :
CYStech Electronics Corp.
Page No. : 2/3
Characteristic Curves
Forward Current vs Forward Voltage
Reverse Leakage Current vs Junction Temperature
1000
100
10
1000
Tj=25℃
Pulse Width 300μs
1% Duty Cycle
V =80V / Max. Values
R
100
10
1
Scattering Limit
V =80V / Typ Values
R
1
0.1
0.01
V =25V / Typ. Values
R
0.1
0
0.4
0.8
1.2
1.6
2
0
20 40 60 80 100 120 140 160 180 200
Forward Voltage---VF(V)
Junction Temperature---T (℃)
j
Reverse Leakage Current vs Reverse Voltage
Capacitance vs Reverse Voltage
1000
100
10
3
f=1MHz
Ta=25℃
Tj= 25℃
2.5
2
Scattering Limit
1.5
1
0.5
1
0.1
1
10
100
1
10
100
Reverse Voltage---V
R(V)
Reverse Voltage---VR(V)
CASD355SG
CYStek Product Specification
Spec. No. : C332SG
Issued Date : 2004.03.26
Revised Date :
CYStech Electronics Corp.
Page No. : 3/3
SOD-323F Dimension
SOD-323F Plastic Surface
Mounted Package
CYStek Package Code:SG
*:Typical
Inches
DIM
Millimeters
Inches
Millimeters
DIM
Min.
0.090
0.045
Max.
0.106
0.053
Min.
Max.
2.7
Min.
0.028
Max.
Min.
0.7
Max.
0.9
A
B
C
2.3
D
R
0.035
1.15
1.35
0.02(typ)
0.5(typ)
0.012(typ)
0.3(typ)
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
CASD355SG
CYStek Product Specification
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